KR880005840A - 플라즈마 처리방법 및 장치 - Google Patents

플라즈마 처리방법 및 장치 Download PDF

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KR880005840A
KR880005840A KR870011527A KR870011527A KR880005840A KR 880005840 A KR880005840 A KR 880005840A KR 870011527 A KR870011527 A KR 870011527A KR 870011527 A KR870011527 A KR 870011527A KR 880005840 A KR880005840 A KR 880005840A
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요시나오 가와사끼
히로노부 가와하라
유다까 가께히
가도오 히로베
가쓰요시 구도오
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미다 가쓰시게
가부시기가이샤 히다찌세이사꾸쇼
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    • H01L21/3065—Plasma etching; Reactive-ion etching
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    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
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Abstract

내용 없음

Description

플라즈마처리방법 및 장치
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명의 일실시예인 플라즈마처리장치를 나타낸 구성도.
제5도는 본 발명에 의한 에칭상태를 나타낸도.
제7도는 본 발명의 제2의 실시예인 플라즈마처리장치를 나타낸 구성도.
* 도면의 주요부분에 대한 부호의 설명
1, 37 : 방전관 2, 31 : 가스도입부
3, 32 : 배기부 4, 30 : 진공처리용기
5, 11 : 전극 5a : 시료대
6, 6a : 웨이퍼 7, 35 : 방전공간
8 : 마그네트론 9 : 도파관
10, 38 : 코일 12, 22 : 매칭박스
13, 23, 13a, 23a, 39 : 고주파전원 14 : 저주파통과필터
15 : 직류전원 16, 24 : 출력전압제어장치
17, 27 : 출력파형제어장치 18 : 질량흐름제어기
19 : 포토레지스트 20 : 폴리실리콘
21 : Si기판 25 : 합성기
26 : 교류파형발생기 28 : 파형
29 : 그리드전극 33 : 하부전극
34 : 상부전극 36 : 콘덴서

Claims (20)

  1. 임계전위를 가지는 가스를 저압하에서 플라즈마화하는 공정과, 상기 임계전위는 어느종류의 가스를 소정의 플라즈마조건하에서 플라즈마화하고, 상기 플라즈마중의 이온에 가속전압을 부여하여 그 이온을 시료에 입사 시키도록한 플라즈마를 사용하여 시료를 처리할때에 에칭작용과 퇴적작용이 균형을 이루는 전위이고, 시료에 향하여 상기 플라즈마중의 이온을 가속시키는 가속전압을 상기 임계전위를 사이에두고 변화시키는 공정을 가지는 플라즈마처리방법.
  2. 제1항에 있어서, 상기 가속전압은 직류전압과 플라즈마중의 이온이 이온시이드를 통과하는데 요하는 시간이내의 반사이클시간을 가지는 주파수의 고주파전압과의 합의 전압으로 가하는 플라즈마 처리방법.
  3. 제1항에 있어서, 상기 가속전압은 주파수 100KHz에서 플라즈마중의 이온이 이온시이드를 통과하는데 요하는 시간 이상의 반사이클시간을 가지는 주파수의 고주파전압을 인가하는 플라즈마처리방법.
  4. 제1항에 있어서, 상기 가속전압은 저주파의 교류전압과 플라스마중의 이온이 이온시이드를 통과하는데 요하는 시간이내의 반사이클을 가지는 주파수의 고주파전압과의 합의 전압으로 가하는 플라즈마처리장치.
  5. 제1항에 있어서, 상기 가속전압은 직류전압으로 가하는 플라즈마처리방법.
  6. 제1항에 있어서, 상기 가속전압은 상기 시료의 시료대에 인가하는 전압, 또는 상기 시료와 상기 플라즈마와의 사이에 설치한 그리드전극에 인가하는 전압으로 이루어지는 플라즈마처리방법.
  7. 제1항에 있어서, 상기 가속전압은 상기 임계전위를 사이에두고 변화시킴과 동시에 애칭작용중에도 변화시키는 플라즈마처리방법.
  8. 임계전위를 가지는 가스를 감압하에서 플라즈마화하는 공정과, 상기 임계전위는 어느종류의 가스를 소정의 플라즈마조건하에서 플라즈마화하고, 상기 플라즈마중의 이온에 가속전압을 부여하여 그 이온을 시료에 입사시키도록한 플라즈마를 사용하여 시료를 처리할때에 에칭작용과 퇴적작용이 평형을 이루는 전위이고, 시료에 향하여 상기 플라즈마중의 이온을 가속시키는 가속전압을 상기 임계전위를 사이에두고 변화시켜 에칭작용과 퇴적작용을 교대로 행하여 깊이방향으로 단계적으로 행하는 공정을 가지는 플라즈마처리방법.
  9. 제8항에 있어서, 상기 에칭작용의 시간은 상기 시료에 생기는 언더커트가 허용치내에 들어가는 시간으로하고 상기 퇴적작용의 시간은 다음이 에칭처리를 행하는 동안 에칭측면의 보호막이 남을만큼의 막두께를 성막할 수 있는 시간으로 하는 플라즈마처리방법.
  10. 제8항에 있어서, 상기 시료가 폴리실리콘인 경우 상기 가스는 C2Cl3F3, C2Cl4F2, CCl4또는 C4F4중 어느 하나의 단독가스 그렇치않으면 SF6또는 NF3와의 혼합가스이고, 상기 시료가 알루미늄인 경우, 상기 가스는 CCl4, CF4, C2F6, C4F8또는 SiCl4중의 어느 하나의 단독가스 또는 Cl2와의 혼합가스인 플라즈마처리방법.
  11. 임계전위를 가지는 가스를 감압하에서 플라즈마화하는 수단과, 상기 임계전위는 어느 종류의 가스를 소정의 플라즈마조건하에서 플라즈마화하고, 상기 플라즈마중의 이온에 가속전압을 부여하여 그 이온을 시료에 입사시키도록한 플라즈마를 사용하여 시료를 처리할때에, 에칭작용과 퇴적작용이 평형일때의 전위이고, 시료에 향하여 상기 플라즈마중의 이온을 가속시키는 가속전압을 상기 임계전위를 사이에두고 변화시키는 수단을 가지는 플라즈마처리장치.
  12. 제11항에 있어서, 상기 가속전압과 플라즈마중의 이온이 이온시이드를 통과하는데 요하는 시간 이내의 반사이클시간을 가지는 주파수의 고주파전원에 의하여 부여되는 플라즈마처리장치.
  13. 제11항에 있어서, 상기 가속전압은 주파수 100KHz에서 플라즈마중의 이온이 이온시이드를 통과하는데 요하는 시간 이상의 반사이클시간을 가지는 주파수의 고주파전원에 의하여 부여되는 플라즈마처리장치.
  14. 제11항에 있어서, 상기 가속전압은 저주파의 교류전원과 플라즈마중의 이온이 이온시이드를 통과하는데 요하는 시간이내의 반사이클시간을 가지는 주파수의 고주파전원에 의하여 가해지는 플라즈마처리장치.
  15. 제11항에 있어서, 상기 가속전압은 직류전원에 의하여 부여되는 플라즈마처리장치.
  16. 제11항에 있어서, 상기 가속전압은 상기 시료의 시료대에 인가하는 전원, 또는 상기 시료의 시료대에인가하는 전원 또는 상기 시료와 상기 플라즈마와의 사이에 설치된 그리드전극에 의하여 부여되는 플라즈마 처리장치.
  17. 제11항에 있어서, 상기 가속전압은 상기 임계전위를 사이에두고 변화시킴과 동시에 에칭작용중에도 변화시키는 플라즈마처리장치.
  18. 임계전위를 가지는 가스를 감압하에서 플라즈마화하는 수단과, 상기 임계전위는 어느종류의 가스를 소정의 플라즈마조건하에서 플라즈마화하고, 상기 플라즈마중의 이온에 가속전압을 부여하고 그 이온을 시료에 입사시키도록한 플라즈마를 사용하여 시료를 치리할때에 에칭작용과 퇴적작용이 평형일때의 전위이고, 시료에 향하여 상기 플라즈마이온을 가속시키는 가속전압을 상기 임계전위를 사이에두고 변화시켜 에칭작용과 퇴적작용을 교대로 행하는 수단을 가지는 플라즈마처리장치.
  19. 제18항에 있어서, 상기 시료가 폴리실리콘인 경우 상기 가스는 C2Cl3F3, C2Cl4F2, CCl4또는 C4F8중 어느 하나의 단독가스 그렇치않으면 SF6또는 NF3와의 혼합가스이고, 상기 시료가 알루미늄인 경우, 상기 가스는 CCl4, CF4, C2F6, C4F8또는 SiCl4중의 어느 하나의 단독가스 또는 그렇지 않으면 Cl2와의 혼합가스인 플라즈마처리장치.
  20. 임계전위를 가지는 가스를 마이크로파에 의한 전계와 자계발생수단에 의한 자계와의 작용을 사용하여 감압하에서 플라즈마화하는 수단과, 상기 임계전위는 어느종류의 가스를 소정의 플라즈마조건하에서 플라즈마화하고, 상기 플라즈마중의 이온에 가속전압을 부여하고 그 이온을 시료에 입사시키도록한 플라즈마를 사용하여 시료를 처리할때에 에칭작용과 퇴적작용이 평형을 이루는 전위이고, 시료를 올려놓는 시료대에 가속전압을 인가하는 수단과, 그 가속전압을 상기 임계전위는 사이에두고 변화시키는 수단을 가지는 플라즈마처리장치.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019870011527A 1986-10-17 1987-10-17 플라즈마처리방법 및 장치 KR900007687B1 (ko)

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JP24526186 1986-10-17
JP245361 1986-10-17
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