KR940022726A - 플라즈마 처리방법 및 플라즈마 처리장치 - Google Patents

플라즈마 처리방법 및 플라즈마 처리장치 Download PDF

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KR940022726A
KR940022726A KR1019940006705A KR19940006705A KR940022726A KR 940022726 A KR940022726 A KR 940022726A KR 1019940006705 A KR1019940006705 A KR 1019940006705A KR 19940006705 A KR19940006705 A KR 19940006705A KR 940022726 A KR940022726 A KR 940022726A
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plasma
processing
processing method
processing chamber
plasma processing
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KR1019940006705A
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KR100324792B1 (ko
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유다카 미우라
쇼조 호소다
이즈미 아라이
요시후미 다하라
히로시 니시카와
요시노부 미다노
순이치 이이무로
가즈오 후카사와
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이노우에 아키라
도오교오 에레구토론 가부시끼가이샤
이노우에 쥰이치
도오교오 에레구토론 야마나시 가부시끼가이샤
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Priority claimed from JP05140031A external-priority patent/JP3086362B2/ja
Priority claimed from JP5346196A external-priority patent/JPH06338476A/ja
Application filed by 이노우에 아키라, 도오교오 에레구토론 가부시끼가이샤, 이노우에 쥰이치, 도오교오 에레구토론 야마나시 가부시끼가이샤 filed Critical 이노우에 아키라
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
    • C23C16/5096—Flat-bed apparatus
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means

Abstract

본 발명은 피처리체를 재치한 처리실 내에 고주파 전력을 인가함에 따라 상기 처리실 내에 플라즈마를 발생시키고, 플라즈마의 분위기에서 피처리체에 처리를 실시하는 플라즈마 처리방법에 있어서, 고주파 전력에 저주파 전력에 의한 변조를 가하는 것을 특징으로 하는 플라즈마 처리방법을 제공한다.
또, 본 발명은, 전류방향이 시간이 경과함에 따라 변화하는 전력을 사용하여 처리실 내에 플라즈마를 발생시키고, 처리실 내에 재치된 피처리체에 대하여 플라즈마의 분위기하에서 처리를 실시하는 플라즈마 처리방법에 있어서, 기본 주파수를 가지는 전력에, 기본 주파수의 n배(n=정수)의 주파수에 의하여 주파수 변조를 가하는 것을 특징으로 하는 플라즈마 처리방법을 제공한다.
또, 본 발명은, 가스 도입수단을 가지는 전극에 형성한 제1가스 도입구멍을 통하여 처리실에 처리가스를 공급하면서 대향하는 전극에 유지한 피처리체에 대하여 플라즈마 처리를 실시하는 플라즈마 처리장치에 있어서, 가스 도입수단으로부터 가스 도입 구멍을 통하여 처리실에 유통하는 처리가스에 대하여, 처리실의 처리압력을 0.5Torr 이하로 설정한 때에, 가스 도입수단 내에 플라즈마 방전을 일으키지 않도록 저항을 부여하는 저항 부여수단이 설치되어 있는 플라즈마 처리장치를 제공한다.

Description

플라즈마 처리방법 및 플라즈마 처리장치
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명의 플라즈마 처리방법의 일실시예에 사용되는 마그네트론 RIE 장치를 나타내는 개략도.
제2도는 반도체 웨이퍼가 챠지업된 상태를 설명하기 위한 도면.
제3도는 본 발명의 플라즈마 처리방법의 다른 실시예에 사용되는 평행 평판형 RIE 장치를 나타내는 개략도.

Claims (15)

  1. 피처리체(W)를 재치한 처리실(2)내에 고주파 전력을 인가함에 따라 상기 처리실 내에 플라즈마를 발생시키고, 상기 플라즈마의 분위기하에서 상기 피처리체에 처리를 실시하는 플라즈마 처리방법에 있어서, 상기 고주파 전력에 저주파 전력에 의한 변조를 가하는 것을 특징으로 하는 플라즈마 처리방법.
  2. 제1항에 있어서, 상기 변조는 주파수 변조 또는 진폭변조인 것을 특징으로 하는 플라즈마 처리방법.
  3. 제1항에 있어서, 상기 변조는 상기 피처리체(W)에 있어서의 챠지전압이 대략 10V로 된 때에 하는 것을 특징으로 하는 플라즈마 처리방법.
  4. 전류방향이 시간이 경과함에 따라 변화하는 전력을 사용하여 처리실내에 플라즈마를 발생시키고, 상기 처리실 내에 재치된 피처리체(W)에 대하여 상기 플라즈마의 분위기하에서 처리를 실시하는 플라즈마 처리방법에 있어서, 기본 주파수를 가지는 전력에, 상기 기본 주파수의 n배(n=정수)의 주파수에 의하여 주파수 변조를 가하는 것을 특징으로 하는 플라즈마 처리방법.
  5. 제4항에 있어서, 상기 주파수 변조가 서로 다른 여러 개의 주파수에 의하여 이루어지는 것을 특징으로 하는 플라즈마 처리방법.
  6. 제4항에 있어서, 상기 주파수 변조가 신호를 주기단위로 분할하여 이루어지는 것을 특징으로 하는 플라즈마 처리방법.
  7. 제4항에 있어서, 상기 전류방향이 시간경과에 따라서 변화하는 전력의 상기 주파수 변조에 대신하여, 상기 전류방향이 시간경과에 따라서 변화하는 전력의 진폭변조가 이루어지는 것을 특징으로 하는 플라즈마 처리방법.
  8. 제7항에 있어서, 상기 진폭변조에 의하여 얻어진 반송파형에 있어서의 상승부와 하강부의 시간이 모두 10μsec 이하로 되도록 하는 것을 특징으로 하는 플라즈마 처리방법.
  9. 제4항에 있어서, 상기 전류방향이 시간경과에 따라서 변화하는 전력이, 고주파 전력인 것을 특징으로 하는 플라즈마 처리방법.
  10. 피처리체(W)를 재치한 처리실 내에 고주파 전력을 인가하는 것에 의하여 상기 처리실 내에 플라즈마를 발생시키고, 상기 플라즈마의 분위기하에서 상기 피처리체에 처리를 실시하는 플라즈마 처리방법에 있어서, 상기 처리실 내에 도입된 처리가스가 발생한 플라즈마에 의하여 최종단계의 해리를 일으키지 않도록 상기 고주파 전력에 저주파 전력에 의한 주파수 변조를 가하는 것을 특징으로 하는 플라즈마 처리방법.
  11. 제10항에 있어서, 상기 주파수 변조가 서로 다른 여러 개의 주파수에 의하여 이루어지는 것을 특징으로 하는 플라즈마 처리방법.
  12. 제10항에 있어서, 상기 주파수 변조가 주파수 신호를 주기단위로 분할하여 이루어지는 것을 특징으로 하는 플라즈마 처리방법.
  13. 가스 도입수단을 가지는 전극에 형성한 제1가스 도입구멍을 통하여 처리실에 처리가스를 공급하면서 대향하는 전극에 유지한 피처리체에 대하여 플라즈마 처리를 실시하는 플라즈마 처리장치에 있어서, 상기 가스 도입수단으로부터 상기 가스 도입 구멍을 통하여 상기 처리실에 유통하는 처리가스에 대하여, 상기 처리실의 처리압력을 0.5Torr 이하로 설정한 때에, 상기 가스 도입수단 내에 플라즈마 방전을 일으키지 않도록 저항을 부여하는 저항 부여수단이 설치되어 있는 플라즈마 처리방법.
  14. 제13항에 있어서, 상기 저항 부여수단은, 제2가스 도입구멍을 가지는 전극의 상기 가스 도입 수단측에 설치된 저항 플레이트를 가지는 것을 특징으로 하는 플라즈마 처리장치.
  15. 제13항에 있어서, 상기 저항 부여수단은, 적어도 상기 저항 플레이트의 두께, 상기 제1 또는 제2가스 도입구멍의 피치 및 상기 제1 또는 제2가스 도입구멍의 구멍 직경을 변화시킴에 따라 상기 유통하는 처리가스에 대한 저항을 변화시키도록 구성되어 있는 것을 특징으로 하는 플라즈마 처리장치.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019940006705A 1993-03-31 1994-03-31 플라즈마처리장치 KR100324792B1 (ko)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
JP9844593 1993-03-31
JP93-98445 1993-03-31
JP93-140031 1993-05-19
JP05140031A JP3086362B2 (ja) 1993-05-19 1993-05-19 プラズマ処理装置
JP5346196A JPH06338476A (ja) 1993-03-31 1993-12-22 プラズマ処理方法
JP93-346196 1993-12-22

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KR940022726A true KR940022726A (ko) 1994-10-21
KR100324792B1 KR100324792B1 (ko) 2002-06-20

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