KR850003059A - 플러스머 처리방법 및 그 장치 - Google Patents

플러스머 처리방법 및 그 장치 Download PDF

Info

Publication number
KR850003059A
KR850003059A KR1019840006435A KR840006435A KR850003059A KR 850003059 A KR850003059 A KR 850003059A KR 1019840006435 A KR1019840006435 A KR 1019840006435A KR 840006435 A KR840006435 A KR 840006435A KR 850003059 A KR850003059 A KR 850003059A
Authority
KR
South Korea
Prior art keywords
plusmer
modulation
voltage
processing
discharge
Prior art date
Application number
KR1019840006435A
Other languages
English (en)
Other versions
KR890004881B1 (ko
Inventor
도루 오즈보 (외 4)
Original Assignee
미쓰다 가쓰시게
가부시기 가이샤 히다찌 세이사꾸쇼
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP19431183A external-priority patent/JPS6086831A/ja
Priority claimed from JP13311784A external-priority patent/JPS6113625A/ja
Application filed by 미쓰다 가쓰시게, 가부시기 가이샤 히다찌 세이사꾸쇼 filed Critical 미쓰다 가쓰시게
Publication of KR850003059A publication Critical patent/KR850003059A/ko
Application granted granted Critical
Publication of KR890004881B1 publication Critical patent/KR890004881B1/ko

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32146—Amplitude modulation, includes pulsing
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/517—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using a combination of discharges covered by two or more of groups C23C16/503 - C23C16/515
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32155—Frequency modulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32155—Frequency modulation
    • H01J37/32165—Plural frequencies

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • ing And Chemical Polishing (AREA)

Abstract

내용 없음

Description

플러스머 처리방법 및 그 장치
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제3도는 본 발명에 의한 AM 변조에 의한 인가전압의 실시예를 도시한 도면. 제4도는 제3도는 도시한 인가 전압인 때의 이온 에너지 분포를 도시한 도면. 제5도는 본 발명에 의한 FM 변조에 의한 인가전압의 실시 1예를 도시한 도면, 제6도는 본 발명에 의한 엣칭 특성과 종래의 엣칭 특성의 비교도.

Claims (17)

  1. 플러스머 처리실내에 처리용 가스를 도입하고, 플러스머 발생장치에 고주파 전압을 동기적으로 변조시켜서 인가하여 방전 플러스머를 생성하고, 이 플러스머에 의해 처리를 하는 것을 특징으로 하는 플러스머 처리방법.
  2. 인가하는 고주파 전압을 엣칭 시간에 비해 매우 적은 주기로 변조하는 엣칭하는 것을 특징으로 하는 특허청구의 범위 제1항 기재의 플러스머 처리방법.
  3. 상기 AM 변조인 것을 특징으로 하는 특허청구의 범위 제1항 기재의 플러스머 처리방법.
  4. 밑바닥 재료위에 금속막, 또는 산화막을 갖으며, 그 위에 페턴화된 레지스트 면을 갖는 것을 상기 금속막 또는 산화막을 엣칭하는 것을 특징으로 하는 특허청구의 범위 제1항 기재의 플러스머 처리방법
  5. 플러스머 처리실내에 처리용 가스를 도입하는 가스 도입 수단과, 고주파 전압을 주기적으로 변조시켜서 인가하는 인가수단과, 해당 인가수단에 의해서 인가된 고주파 전압에 의해서 처리실내에 플러스머를 발생시키는 플러스머 발생수단을 구비시킨 것을 특징으로 하는 플러스머 처리장치.
  6. 상기 인가수단의 변조가 AM 변조인 것을 특징으로 하는 특허청구의 범위 제5항 기재의 플러스머 처리장치.
  7. 상기 AM변조가 구형파에 의한 변조인 것을 특징으로 하는 특허청구의 범위 제6항 기재의 플러스어 처리장치.
  8. 상기 변조 주파수가 10Hz-10KHz인 것을 특징으로 하는 특허청구의 범위 제7항 기재의 플러스머 처리장치.
  9. 고전압 V3의 시간 t2와 낮은 전압 V2의 시간 t3이 t1/t2=1∼20, V3/V2=2∼4인 것을 특징으로 하는 특허청구의 범위 제8항 기재의 플러스머 처리장치.
  10. 상기 플러스머 발생수단이 평행 평판 전극으로 구성되어 있는 것을 특징으로 하는 특허청구의 범위 제5항, 제6항, 제7항, 제8항 또는 제9항 기재의 플러스머 처리장치.
  11. 처리실내에 처리용 가스를 도입하는 가스도입 수단과, 처리용 가스를 플러스머 상태화 하는 방전수단과, 해당 방전 수단에 접속된 방전 전압변조 수단과 플러스머중의 이온을 가속해서 피처리물에 입사시키는 이온 가속수단과, 해당 이온 가속수단에 접속된 인가 전압을 제어하는 제어수단을 구비한 것을 특징으로 하는 플러스머 처리장치.
  12. 상기 방전 전압 변조수단으로서 AM변조 수단에 의해서 구성된 것을 특징으로 하는 특허청구의 범위 제11항 기재의 플러스머 처리장치.
  13. 상기 제어수단으로서 변조 수단에 의해 구성한 것을 특징으로 하는 특허청구의 범위 제12항 기재의 플러스머 처리장치.
  14. 상기 변조 수단으로서 AM 변조 수단에 의해서 구성한 것을 특허청구의 범위 제13항 기재의 플러스머 처리장치.
  15. 상기 방전 수단은 마이크로파와 자장에 의한 전자 사이클로트론 공명에 의해서 플러스머 상태화 할 수 있도록 구성한 것을 특징으로 하는 특허청구의 범위 제11항 기재의 플러스머 처리장치.
  16. 상기 이온 가속 수단으로서, 교류 성분 중첩직류 전압이 인가된 그릿 전극에 의해서 구성한 것을 특징으로 하는 특허청구의 범위 제15항 기재의 플러스머 처리장치.
  17. 상기 방전전압 변조 수단으로 AM 변조 수단에 의해서 구성한 것을 특징으로 하는 특허청구의 범위 제15항 기재의 플러스머 처리장치.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019840006435A 1983-10-19 1984-10-17 플라즈마 처리 방법 및 그 장치 KR890004881B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP19431183A JPS6086831A (ja) 1983-10-19 1983-10-19 プラズマ処理方法およびその装置
JP58-194311 1983-10-19
JP13311784A JPS6113625A (ja) 1984-06-29 1984-06-29 プラズマ処理装置
JP59-133117 1984-06-29

Publications (2)

Publication Number Publication Date
KR850003059A true KR850003059A (ko) 1985-05-28
KR890004881B1 KR890004881B1 (ko) 1989-11-30

Family

ID=26467539

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019840006435A KR890004881B1 (ko) 1983-10-19 1984-10-17 플라즈마 처리 방법 및 그 장치

Country Status (4)

Country Link
US (1) US4808258A (ko)
EP (1) EP0140294B1 (ko)
KR (1) KR890004881B1 (ko)
DE (1) DE3482076D1 (ko)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100971370B1 (ko) * 2003-08-12 2010-07-20 주성엔지니어링(주) 균일한 대면적 플라즈마 발생을 위한 고주파전원 공급장치

Families Citing this family (68)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3439254A1 (de) * 1984-10-26 1986-04-30 MAP Mikrofilm Apparatebau Dr. Poehler GmbH & Co KG, 6352 Ober-Mörlen Objektivhalterung
US4581100A (en) * 1984-10-29 1986-04-08 International Business Machines Corporation Mixed excitation plasma etching system
US4926791A (en) * 1987-04-27 1990-05-22 Semiconductor Energy Laboratory Co., Ltd. Microwave plasma apparatus employing helmholtz coils and ioffe bars
NL8701867A (nl) * 1987-08-07 1989-03-01 Cobrain Nv Werkwijze voor het behandelen, in het bijzonder droog etsen van een substraat en etsinrichting.
GB2212974B (en) * 1987-11-25 1992-02-12 Fuji Electric Co Ltd Plasma processing apparatus
JPH0216731A (ja) * 1988-07-05 1990-01-19 Mitsubishi Electric Corp プラズマ反応装置
US4950377A (en) * 1988-09-23 1990-08-21 Siemens Aktiengesellschaft Apparatus and method for reactive ion etching
IT1227877B (it) * 1988-11-25 1991-05-14 Eniricerche S P A Agip S P A Procedimento per la deposizione via plasma di strati multipli dimate riale amorfo a composizione variabile
KR900013595A (ko) * 1989-02-15 1990-09-06 미다 가쓰시게 플라즈마 에칭방법 및 장치
EP0402867B1 (en) * 1989-06-15 1995-03-01 Sel Semiconductor Energy Laboratory Co., Ltd. Apparatus for microwave processing in a magnetic field
US5312778A (en) * 1989-10-03 1994-05-17 Applied Materials, Inc. Method for plasma processing using magnetically enhanced plasma chemical vapor deposition
US5223457A (en) * 1989-10-03 1993-06-29 Applied Materials, Inc. High-frequency semiconductor wafer processing method using a negative self-bias
DE4022708A1 (de) * 1990-07-17 1992-04-02 Balzers Hochvakuum Aetz- oder beschichtungsanlagen
EP0533044B1 (de) * 1991-09-20 1999-12-29 Balzers Aktiengesellschaft Verfahren zur Schutzbeschichtung von Substraten sowie Beschichtungsanlage
US5849136A (en) * 1991-10-11 1998-12-15 Applied Materials, Inc. High frequency semiconductor wafer processing apparatus and method
US5352324A (en) * 1992-11-05 1994-10-04 Hitachi, Ltd. Etching method and etching apparatus therefor
US5478429A (en) * 1993-01-20 1995-12-26 Tokyo Electron Limited Plasma process apparatus
JP3252507B2 (ja) * 1993-01-29 2002-02-04 ソニー株式会社 プラズマ処理装置
DE4307768A1 (de) * 1993-03-11 1994-09-15 Fraunhofer Ges Forschung Verfahren zur Anregung von Gasentladungen
US6328845B1 (en) * 1993-03-18 2001-12-11 Hitachi, Ltd. Plasma-processing method and an apparatus for carrying out the same
KR100302167B1 (ko) * 1993-11-05 2001-11-22 히가시 데쓰로 플라즈마처리장치및플라즈마처리방법
US5468341A (en) * 1993-12-28 1995-11-21 Nec Corporation Plasma-etching method and apparatus therefor
US5441596A (en) * 1994-07-27 1995-08-15 Cypress Semiconductor Corporation Method for forming a stable plasma
US5618758A (en) * 1995-02-17 1997-04-08 Sharp Kabushiki Kaisha Method for forming a thin semiconductor film and a plasma CVD apparatus to be used in the method
US5614060A (en) * 1995-03-23 1997-03-25 Applied Materials, Inc. Process and apparatus for etching metal in integrated circuit structure with high selectivity to photoresist and good metal etch residue removal
TW283250B (en) 1995-07-10 1996-08-11 Watkins Johnson Co Plasma enhanced chemical processing reactor and method
DE19610012B4 (de) * 1996-03-14 2005-02-10 Unaxis Deutschland Holding Gmbh Verfahren zur Stabilisierung eines Arbeitspunkts beim reaktiven Zerstäuben in einer Sauerstoff enthaltenden Atmosphäre
US6170428B1 (en) * 1996-07-15 2001-01-09 Applied Materials, Inc. Symmetric tunable inductively coupled HDP-CVD reactor
JPH10150025A (ja) * 1996-11-20 1998-06-02 Mitsubishi Electric Corp プラズマ反応装置
JP3042450B2 (ja) * 1997-06-24 2000-05-15 日本電気株式会社 プラズマ処理方法
US6106659A (en) * 1997-07-14 2000-08-22 The University Of Tennessee Research Corporation Treater systems and methods for generating moderate-to-high-pressure plasma discharges for treating materials and related treated materials
US6083355A (en) * 1997-07-14 2000-07-04 The University Of Tennessee Research Corporation Electrodes for plasma treater systems
US6093332A (en) * 1998-02-04 2000-07-25 Lam Research Corporation Methods for reducing mask erosion during plasma etching
KR100521120B1 (ko) 1998-02-13 2005-10-12 가부시끼가이샤 히다치 세이사꾸쇼 반도체소자의 표면처리방법 및 장치
US6660647B1 (en) 1998-03-12 2003-12-09 Hitachi, Ltd. Method for processing surface of sample
JP4351755B2 (ja) * 1999-03-12 2009-10-28 キヤノンアネルバ株式会社 薄膜作成方法および薄膜作成装置
DE10145297A1 (de) * 2001-09-14 2003-04-10 Bosch Gmbh Robert Verfahren zum Einätzen von Strukturen in einen Ätzkörper mit einem Plasma
US7361287B2 (en) 1999-04-30 2008-04-22 Robert Bosch Gmbh Method for etching structures in an etching body by means of a plasma
CN1241316C (zh) 1999-07-13 2006-02-08 东京电子株式会社 产生感性耦合的等离子的射频电源
ATE420454T1 (de) * 1999-08-17 2009-01-15 Tokyo Electron Ltd Gepulstes plasmabehandlungsverfahren und vorrichtung
JP2001168086A (ja) 1999-12-09 2001-06-22 Kawasaki Steel Corp 半導体装置の製造方法および製造装置
US6472822B1 (en) * 2000-04-28 2002-10-29 Applied Materials, Inc. Pulsed RF power delivery for plasma processing
US6544895B1 (en) * 2000-08-17 2003-04-08 Micron Technology, Inc. Methods for use of pulsed voltage in a plasma reactor
US6485572B1 (en) * 2000-08-28 2002-11-26 Micron Technology, Inc. Use of pulsed grounding source in a plasma reactor
US7112533B2 (en) * 2000-08-31 2006-09-26 Micron Technology, Inc. Plasma etching system and method
US6562190B1 (en) * 2000-10-06 2003-05-13 Lam Research Corporation System, apparatus, and method for processing wafer using single frequency RF power in plasma processing chamber
US6726804B2 (en) * 2001-01-22 2004-04-27 Liang-Guo Wang RF power delivery for plasma processing using modulated power signal
US6777037B2 (en) 2001-02-21 2004-08-17 Hitachi, Ltd. Plasma processing method and apparatus
DE10309711A1 (de) 2001-09-14 2004-09-16 Robert Bosch Gmbh Verfahren zum Einätzen von Strukturen in einem Ätzkörper mit einem Plasma
JP2003173757A (ja) * 2001-12-04 2003-06-20 Nissin Electric Co Ltd イオンビーム照射装置
US7025895B2 (en) * 2002-08-15 2006-04-11 Hitachi High-Technologies Corporation Plasma processing apparatus and method
US20040132311A1 (en) * 2003-01-06 2004-07-08 Applied Materials, Inc. Method of etching high-K dielectric materials
US6942813B2 (en) * 2003-03-05 2005-09-13 Applied Materials, Inc. Method of etching magnetic and ferroelectric materials using a pulsed bias source
US7976673B2 (en) 2003-05-06 2011-07-12 Lam Research Corporation RF pulsing of a narrow gap capacitively coupled reactor
US20050112891A1 (en) * 2003-10-21 2005-05-26 David Johnson Notch-free etching of high aspect SOI structures using a time division multiplex process and RF bias modulation
KR101170597B1 (ko) * 2006-05-10 2012-08-02 주성엔지니어링(주) 진폭변조 알에프 전력을 이용한 갭필 방법 및 이를 위한갭필 장치
US8207010B2 (en) * 2007-06-05 2012-06-26 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing photoelectric conversion device
KR101515663B1 (ko) * 2007-10-26 2015-04-27 칼 짜이스 에스엠티 게엠베하 결상 광학 시스템 및 이러한 유형의 결상 광학 시스템을 갖는 마이크로리소그래피용 투영 노광 장치
US7678715B2 (en) * 2007-12-21 2010-03-16 Applied Materials, Inc. Low wet etch rate silicon nitride film
JP5211332B2 (ja) * 2008-07-01 2013-06-12 株式会社ユーテック プラズマｃｖｄ装置、ｄｌｃ膜及び薄膜の製造方法
JP4932942B2 (ja) * 2009-08-07 2012-05-16 株式会社京三製作所 パルス変調高周波電力制御方法およびパルス変調高周波電源装置
US8969210B2 (en) * 2010-09-15 2015-03-03 Tokyo Electron Limited Plasma etching apparatus, plasma etching method, and semiconductor device manufacturing method
US10157729B2 (en) 2012-02-22 2018-12-18 Lam Research Corporation Soft pulsing
US9018108B2 (en) 2013-01-25 2015-04-28 Applied Materials, Inc. Low shrinkage dielectric films
US9460894B2 (en) 2013-06-28 2016-10-04 Lam Research Corporation Controlling ion energy within a plasma chamber
JP6316735B2 (ja) * 2014-12-04 2018-04-25 東京エレクトロン株式会社 プラズマエッチング方法
WO2016104098A1 (ja) * 2014-12-25 2016-06-30 東京エレクトロン株式会社 プラズマ処理装置およびプラズマ処理方法
US10340123B2 (en) * 2016-05-26 2019-07-02 Tokyo Electron Limited Multi-frequency power modulation for etching high aspect ratio features

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3677799A (en) * 1970-11-10 1972-07-18 Celanese Corp Vapor phase boron deposition by pulse discharge
US4233109A (en) * 1976-01-16 1980-11-11 Zaidan Hojin Handotai Kenkyu Shinkokai Dry etching method
JPS5613480A (en) * 1979-07-13 1981-02-09 Hitachi Ltd Dry etching apparatus
FR2463975A1 (fr) * 1979-08-22 1981-02-27 Onera (Off Nat Aerospatiale) Procede et appareil pour la gravure chimique par voie seche des circuits integres
JPS5633839A (en) * 1979-08-29 1981-04-04 Hitachi Ltd Plasma treatment and device therefor
JPS5687672A (en) * 1979-12-15 1981-07-16 Anelva Corp Dry etching apparatus
JPS5825742B2 (ja) * 1979-12-22 1983-05-30 富士通株式会社 プラズマエッチング処理方法及び処理装置
US4349409A (en) * 1980-05-12 1982-09-14 Fujitsu Limited Method and apparatus for plasma etching
JPS58100430A (ja) * 1981-12-11 1983-06-15 Hitachi Ltd プラズマ処理装置
JPS6050923A (ja) * 1983-08-31 1985-03-22 Hitachi Ltd プラズマ表面処理方法
US4464223A (en) * 1983-10-03 1984-08-07 Tegal Corp. Plasma reactor apparatus and method
US4496448A (en) * 1983-10-13 1985-01-29 At&T Bell Laboratories Method for fabricating devices with DC bias-controlled reactive ion etching
US4585516A (en) * 1985-03-04 1986-04-29 Tegal Corporation Variable duty cycle, multiple frequency, plasma reactor

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100971370B1 (ko) * 2003-08-12 2010-07-20 주성엔지니어링(주) 균일한 대면적 플라즈마 발생을 위한 고주파전원 공급장치

Also Published As

Publication number Publication date
EP0140294B1 (en) 1990-04-25
EP0140294A2 (en) 1985-05-08
US4808258A (en) 1989-02-28
EP0140294A3 (en) 1986-08-20
KR890004881B1 (ko) 1989-11-30
DE3482076D1 (de) 1990-05-31

Similar Documents

Publication Publication Date Title
KR850003059A (ko) 플러스머 처리방법 및 그 장치
KR890006845A (ko) 플라즈마를 이용한 코팅 또는 에칭장치
KR101339931B1 (ko) 이온 에너지 분포를 제어하기 위한 방법 및 장치
JP4073174B2 (ja) 中性粒子ビーム処理装置
US6165376A (en) Work surface treatment method and work surface treatment apparatus
EP0283519A4 (en) ION GENERATOR, THIN FILM FORMATION INSTALLATION USING THE SAME, AND ION SOURCE.
EP0831516A3 (en) Device and method for processing a plasma to alter the surface of a substrate using neutrals
ES8303542A1 (es) Un procedimiento y su aparato correspondiente para la metalizacion ionica de un sustrato.
KR900013595A (ko) 플라즈마 에칭방법 및 장치
ATE118924T1 (de) Plasmaätzvorrichtung mit magnetfeldern an der oberfläche.
JP3042450B2 (ja) プラズマ処理方法
KR910008871A (ko) 성막장치
US4943361A (en) Plasma treating method and apparatus therefor
US7087912B2 (en) Ion beam irradiation apparatus for suppressing charge up of substrate and method for the same
JPH02116128A (ja) 反応性イオン・エツチング装置
KR100949472B1 (ko) 고선택비 및 대면적고균일 플라즈마처리방법과 장치
JP4042817B2 (ja) 中性粒子ビーム処理装置
JPS5687670A (en) Dry etching apparatus
KR960026338A (ko) 레지스트의 애싱방법 및 장치
JPS6473620A (en) Plasma applying device
KR910010753A (ko) 전자사이클로트론 공명을 사용한 플라즈마처리방법 및 장치
US6926844B1 (en) Plasma etching method having pulsed substrate electrode power
KR950034507A (ko) 헬리콘파플라즈마처리방법 및 장치
JPH07249614A (ja) プラズマエッチング方法及びその装置
JP2845910B2 (ja) スパッタリング成膜装置

Legal Events

Date Code Title Description
A201 Request for examination
E902 Notification of reason for refusal
G160 Decision to publish patent application
E701 Decision to grant or registration of patent right
GRNT Written decision to grant
FPAY Annual fee payment

Payment date: 20031031

Year of fee payment: 15

EXPY Expiration of term