JP2004006885A5 - - Google Patents
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- Publication number
- JP2004006885A5 JP2004006885A5 JP2003147766A JP2003147766A JP2004006885A5 JP 2004006885 A5 JP2004006885 A5 JP 2004006885A5 JP 2003147766 A JP2003147766 A JP 2003147766A JP 2003147766 A JP2003147766 A JP 2003147766A JP 2004006885 A5 JP2004006885 A5 JP 2004006885A5
- Authority
- JP
- Japan
- Prior art keywords
- frequency power
- reactor
- vapor deposition
- chemical vapor
- frequency
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 claims 29
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims 26
- 238000003672 processing method Methods 0.000 claims 22
- 230000009977 dual effect Effects 0.000 claims 13
- 238000005229 chemical vapour deposition Methods 0.000 claims 10
- 238000000034 method Methods 0.000 claims 8
- 239000000376 reactant Substances 0.000 claims 6
- 239000007795 chemical reaction product Substances 0.000 claims 1
- 230000008878 coupling Effects 0.000 claims 1
- 238000010168 coupling process Methods 0.000 claims 1
- 238000005859 coupling reaction Methods 0.000 claims 1
- 238000000151 deposition Methods 0.000 claims 1
- 230000008021 deposition Effects 0.000 claims 1
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US09/026,566 US6112697A (en) | 1998-02-19 | 1998-02-19 | RF powered plasma enhanced chemical vapor deposition reactor and methods |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2000532862A Division JP3822055B2 (ja) | 1998-02-19 | 1999-02-16 | 高周波型プラズマ強化化学気相堆積反応装置、及びそれを実施する方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2004006885A JP2004006885A (ja) | 2004-01-08 |
| JP2004006885A5 true JP2004006885A5 (enExample) | 2005-04-07 |
| JP4217883B2 JP4217883B2 (ja) | 2009-02-04 |
Family
ID=21832548
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2000532862A Expired - Fee Related JP3822055B2 (ja) | 1998-02-19 | 1999-02-16 | 高周波型プラズマ強化化学気相堆積反応装置、及びそれを実施する方法 |
| JP2003147766A Expired - Fee Related JP4217883B2 (ja) | 1998-02-19 | 2003-05-26 | 高周波型プラズマ強化化学気相堆積反応装置、及びそれを用いる方法 |
Family Applications Before (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2000532862A Expired - Fee Related JP3822055B2 (ja) | 1998-02-19 | 1999-02-16 | 高周波型プラズマ強化化学気相堆積反応装置、及びそれを実施する方法 |
Country Status (9)
| Country | Link |
|---|---|
| US (2) | US6112697A (enExample) |
| EP (1) | EP1057207B1 (enExample) |
| JP (2) | JP3822055B2 (enExample) |
| KR (1) | KR100388529B1 (enExample) |
| AT (1) | ATE269586T1 (enExample) |
| AU (1) | AU3293999A (enExample) |
| DE (1) | DE69918063T2 (enExample) |
| TW (1) | TW523830B (enExample) |
| WO (1) | WO1999043017A1 (enExample) |
Families Citing this family (53)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2806324B1 (fr) * | 2000-03-15 | 2002-09-27 | Air Liquide | Procede et dispositif de mise en oeuvre d'une reaction chimique et procede de traitement de surface utilisant de tels procede et dispositif |
| US6857387B1 (en) | 2000-05-03 | 2005-02-22 | Applied Materials, Inc. | Multiple frequency plasma chamber with grounding capacitor at cathode |
| US6562684B1 (en) | 2000-08-30 | 2003-05-13 | Micron Technology, Inc. | Methods of forming dielectric materials |
| US6694284B1 (en) | 2000-09-20 | 2004-02-17 | Kla-Tencor Technologies Corp. | Methods and systems for determining at least four properties of a specimen |
| US7130029B2 (en) | 2000-09-20 | 2006-10-31 | Kla-Tencor Technologies Corp. | Methods and systems for determining an adhesion characteristic and a thickness of a specimen |
| US6891627B1 (en) | 2000-09-20 | 2005-05-10 | Kla-Tencor Technologies Corp. | Methods and systems for determining a critical dimension and overlay of a specimen |
| US6919957B2 (en) | 2000-09-20 | 2005-07-19 | Kla-Tencor Technologies Corp. | Methods and systems for determining a critical dimension, a presence of defects, and a thin film characteristic of a specimen |
| US7349090B2 (en) | 2000-09-20 | 2008-03-25 | Kla-Tencor Technologies Corp. | Methods and systems for determining a property of a specimen prior to, during, or subsequent to lithography |
| US6812045B1 (en) | 2000-09-20 | 2004-11-02 | Kla-Tencor, Inc. | Methods and systems for determining a characteristic of a specimen prior to, during, or subsequent to ion implantation |
| US6673637B2 (en) | 2000-09-20 | 2004-01-06 | Kla-Tencor Technologies | Methods and systems for determining a presence of macro defects and overlay of a specimen |
| US7139083B2 (en) | 2000-09-20 | 2006-11-21 | Kla-Tencor Technologies Corp. | Methods and systems for determining a composition and a thickness of a specimen |
| US6782337B2 (en) | 2000-09-20 | 2004-08-24 | Kla-Tencor Technologies Corp. | Methods and systems for determining a critical dimension an a presence of defects on a specimen |
| US7106425B1 (en) | 2000-09-20 | 2006-09-12 | Kla-Tencor Technologies Corp. | Methods and systems for determining a presence of defects and a thin film characteristic of a specimen |
| JP4877884B2 (ja) * | 2001-01-25 | 2012-02-15 | 東京エレクトロン株式会社 | プラズマ処理装置 |
| US6800210B2 (en) * | 2001-05-22 | 2004-10-05 | Reflectivity, Inc. | Method for making a micromechanical device by removing a sacrificial layer with multiple sequential etchants |
| US20040025791A1 (en) * | 2002-08-09 | 2004-02-12 | Applied Materials, Inc. | Etch chamber with dual frequency biasing sources and a single frequency plasma generating source |
| US6838012B2 (en) * | 2002-10-31 | 2005-01-04 | Lam Research Corporation | Methods for etching dielectric materials |
| US20040188240A1 (en) * | 2003-03-28 | 2004-09-30 | Taiwan Semiconductor Manufacturing Co., Ltd. | Process for in-situ nitridation of salicides |
| GB0309932D0 (en) * | 2003-04-30 | 2003-06-04 | Boc Group Plc | Apparatus and method for forming a plasma |
| US7431857B2 (en) * | 2003-08-15 | 2008-10-07 | Applied Materials, Inc. | Plasma generation and control using a dual frequency RF source |
| US20050118541A1 (en) * | 2003-11-28 | 2005-06-02 | Applied Materials, Inc. | Maintenance of photoresist adhesion and activity on the surface of dielectric ARCS for 90 nm feature sizes |
| US7829471B2 (en) | 2005-07-29 | 2010-11-09 | Applied Materials, Inc. | Cluster tool and method for process integration in manufacturing of a photomask |
| US20070031609A1 (en) * | 2005-07-29 | 2007-02-08 | Ajay Kumar | Chemical vapor deposition chamber with dual frequency bias and method for manufacturing a photomask using the same |
| US7375038B2 (en) | 2005-09-28 | 2008-05-20 | Applied Materials, Inc. | Method for plasma etching a chromium layer through a carbon hard mask suitable for photomask fabrication |
| US7695633B2 (en) * | 2005-10-18 | 2010-04-13 | Applied Materials, Inc. | Independent control of ion density, ion energy distribution and ion dissociation in a plasma reactor |
| US20070245960A1 (en) * | 2006-04-24 | 2007-10-25 | Applied Materials, Inc. | Process using combined capacitively and inductively coupled plasma sources for controlling plasma ion density |
| US20070246163A1 (en) * | 2006-04-24 | 2007-10-25 | Applied Materials, Inc. | Plasma reactor apparatus with independent capacitive and inductive plasma sources |
| US20070246162A1 (en) * | 2006-04-24 | 2007-10-25 | Applied Materials, Inc. | Plasma reactor apparatus with an inductive plasma source and a VHF capacitively coupled plasma source with variable frequency |
| US20070245961A1 (en) * | 2006-04-24 | 2007-10-25 | Applied Materials, Inc. | Dual plasma source process using a variable frequency capacitively coupled source for controlling plasma ion dissociation |
| US7780864B2 (en) | 2006-04-24 | 2010-08-24 | Applied Materials, Inc. | Process using combined capacitively and inductively coupled plasma sources for controlling plasma ion radial distribution |
| US20070245958A1 (en) * | 2006-04-24 | 2007-10-25 | Applied Materials, Inc. | Dual plasma source process using a variable frequency capacitively coupled source for controlling ion radial distribution |
| US7727413B2 (en) * | 2006-04-24 | 2010-06-01 | Applied Materials, Inc. | Dual plasma source process using a variable frequency capacitively coupled source to control plasma ion density |
| US20070246161A1 (en) * | 2006-04-24 | 2007-10-25 | Applied Materials, Inc. | Plasma reactor apparatus with a toroidal plasma source and a VHF capacitively coupled plasma source with variable frequency |
| US20070246443A1 (en) * | 2006-04-24 | 2007-10-25 | Applied Materials, Inc. | Process using combined capacitively and inductively coupled plasma process for controlling plasma ion dissociation |
| US7645357B2 (en) * | 2006-04-24 | 2010-01-12 | Applied Materials, Inc. | Plasma reactor apparatus with a VHF capacitively coupled plasma source of variable frequency |
| US8673080B2 (en) | 2007-10-16 | 2014-03-18 | Novellus Systems, Inc. | Temperature controlled showerhead |
| US20090104541A1 (en) * | 2007-10-23 | 2009-04-23 | Eui Kyoon Kim | Plasma surface treatment to prevent pattern collapse in immersion lithography |
| US20090188625A1 (en) * | 2008-01-28 | 2009-07-30 | Carducci James D | Etching chamber having flow equalizer and lower liner |
| US8637794B2 (en) | 2009-10-21 | 2014-01-28 | Lam Research Corporation | Heating plate with planar heating zones for semiconductor processing |
| US9034142B2 (en) * | 2009-12-18 | 2015-05-19 | Novellus Systems, Inc. | Temperature controlled showerhead for high temperature operations |
| KR101415552B1 (ko) * | 2009-12-21 | 2014-07-07 | 주식회사 미코 | 접지구조물, 이를 구비하는 히터 및 화학기상 증착장치 |
| JP5730521B2 (ja) | 2010-09-08 | 2015-06-10 | 株式会社日立ハイテクノロジーズ | 熱処理装置 |
| US8791392B2 (en) | 2010-10-22 | 2014-07-29 | Lam Research Corporation | Methods of fault detection for multiplexed heater array |
| SG192967A1 (en) | 2011-03-04 | 2013-09-30 | Novellus Systems Inc | Hybrid ceramic showerhead |
| US8618446B2 (en) | 2011-06-30 | 2013-12-31 | Applied Materials, Inc. | Substrate support with substrate heater and symmetric RF return |
| US10741365B2 (en) | 2014-05-05 | 2020-08-11 | Lam Research Corporation | Low volume showerhead with porous baffle |
| US10378107B2 (en) | 2015-05-22 | 2019-08-13 | Lam Research Corporation | Low volume showerhead with faceplate holes for improved flow uniformity |
| US10023959B2 (en) | 2015-05-26 | 2018-07-17 | Lam Research Corporation | Anti-transient showerhead |
| TWI728197B (zh) | 2016-10-24 | 2021-05-21 | 美商克萊譚克公司 | 整合至一計量及/或檢測工具中之製程模組 |
| US20200098562A1 (en) * | 2018-09-26 | 2020-03-26 | Lam Research Corporation | Dual frequency silane-based silicon dioxide deposition to minimize film instability |
| US12486574B2 (en) | 2019-08-23 | 2025-12-02 | Lam Research Corporation | Thermally controlled chandelier showerhead |
| CN119980191A (zh) | 2019-08-28 | 2025-05-13 | 朗姆研究公司 | 金属沉积 |
| CN110528018A (zh) * | 2019-09-25 | 2019-12-03 | 宜兴市翔翮环保设备有限公司 | 一种二氧化氯消毒液制备装置 |
Family Cites Families (35)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4585516A (en) * | 1985-03-04 | 1986-04-29 | Tegal Corporation | Variable duty cycle, multiple frequency, plasma reactor |
| US5230931A (en) * | 1987-08-10 | 1993-07-27 | Semiconductor Energy Laboratory Co., Ltd. | Plasma-assisted cvd of carbonaceous films by using a bias voltage |
| US4887005A (en) | 1987-09-15 | 1989-12-12 | Rough J Kirkwood H | Multiple electrode plasma reactor power distribution system |
| JP2629871B2 (ja) | 1988-08-29 | 1997-07-16 | スズキ株式会社 | 車両用変速機 |
| JPH02213480A (ja) * | 1989-02-14 | 1990-08-24 | Nippon Light Metal Co Ltd | 高周波プラズマ発生用アルミニウム電極 |
| JPH02298024A (ja) * | 1989-05-12 | 1990-12-10 | Tadahiro Omi | リアクティブイオンエッチング装置 |
| JP3016821B2 (ja) * | 1990-06-15 | 2000-03-06 | 東京エレクトロン株式会社 | プラズマ処理方法 |
| FR2663806A1 (fr) * | 1990-06-25 | 1991-12-27 | Commissariat Energie Atomique | Reacteur a plasma du type triode, utilisable notamment pour la gravure, le depot ou le nettoyage de surfaces. |
| DE4025396A1 (de) * | 1990-08-10 | 1992-02-13 | Leybold Ag | Einrichtung fuer die herstellung eines plasmas |
| US5052339A (en) * | 1990-10-16 | 1991-10-01 | Air Products And Chemicals, Inc. | Radio frequency plasma enhanced chemical vapor deposition process and reactor |
| JPH04362091A (ja) * | 1991-06-05 | 1992-12-15 | Mitsubishi Heavy Ind Ltd | プラズマ化学気相成長装置 |
| US5260236A (en) * | 1991-06-07 | 1993-11-09 | Intel Corporation | UV transparent oxynitride deposition in single wafer PECVD system |
| JPH05175163A (ja) * | 1991-12-24 | 1993-07-13 | Mitsubishi Electric Corp | プラズマ処理装置 |
| DE69226253T2 (de) * | 1992-01-24 | 1998-12-17 | Applied Materials, Inc., Santa Clara, Calif. | Plasmaätzverfahren und Reaktor zur Plasmabearbeitung |
| JP3122228B2 (ja) * | 1992-05-13 | 2001-01-09 | 忠弘 大見 | プロセス装置 |
| US5567267A (en) * | 1992-11-20 | 1996-10-22 | Tokyo Electron Limited | Method of controlling temperature of susceptor |
| US5665167A (en) * | 1993-02-16 | 1997-09-09 | Tokyo Electron Kabushiki Kaisha | Plasma treatment apparatus having a workpiece-side electrode grounding circuit |
| JP3351843B2 (ja) * | 1993-02-24 | 2002-12-03 | 忠弘 大見 | 成膜方法 |
| US5439524A (en) * | 1993-04-05 | 1995-08-08 | Vlsi Technology, Inc. | Plasma processing apparatus |
| US5433786A (en) * | 1993-08-27 | 1995-07-18 | The Dow Chemical Company | Apparatus for plasma enhanced chemical vapor deposition comprising shower head electrode with magnet disposed therein |
| US5468296A (en) * | 1993-12-17 | 1995-11-21 | Lsi Logic Corporation | Apparatus for igniting low pressure inductively coupled plasma |
| US5900103A (en) * | 1994-04-20 | 1999-05-04 | Tokyo Electron Limited | Plasma treatment method and apparatus |
| JPH09503350A (ja) * | 1994-05-13 | 1997-03-31 | アプライド マテリアルズ インコーポレイテッド | 有磁気場励起マルチ容量プラズマ発生装置および関連方法 |
| US5607542A (en) * | 1994-11-01 | 1997-03-04 | Applied Materials Inc. | Inductively enhanced reactive ion etching |
| US5716534A (en) * | 1994-12-05 | 1998-02-10 | Tokyo Electron Limited | Plasma processing method and plasma etching method |
| US5605637A (en) * | 1994-12-15 | 1997-02-25 | Applied Materials Inc. | Adjustable dc bias control in a plasma reactor |
| US5710486A (en) * | 1995-05-08 | 1998-01-20 | Applied Materials, Inc. | Inductively and multi-capacitively coupled plasma reactor |
| US5932116A (en) | 1995-06-05 | 1999-08-03 | Tohoku Unicom Co., Ltd. | Power supply for multi-electrode discharge |
| US5656123A (en) * | 1995-06-07 | 1997-08-12 | Varian Associates, Inc. | Dual-frequency capacitively-coupled plasma reactor for materials processing |
| TW323387B (enExample) * | 1995-06-07 | 1997-12-21 | Tokyo Electron Co Ltd | |
| JP2814370B2 (ja) * | 1995-06-18 | 1998-10-22 | 東京エレクトロン株式会社 | プラズマ処理装置 |
| US5865937A (en) * | 1995-08-21 | 1999-02-02 | Applied Materials, Inc. | Broad-band adjustable power ratio phase-inverting plasma reactor |
| KR970052089A (enExample) * | 1995-12-05 | 1997-07-29 | ||
| JPH09167755A (ja) * | 1995-12-15 | 1997-06-24 | Nec Corp | プラズマ酸化膜処理装置 |
| US5981899A (en) | 1997-01-17 | 1999-11-09 | Balzers Aktiengesellschaft | Capacitively coupled RF-plasma reactor |
-
1998
- 1998-02-19 US US09/026,566 patent/US6112697A/en not_active Expired - Lifetime
-
1999
- 1999-02-16 DE DE69918063T patent/DE69918063T2/de not_active Expired - Lifetime
- 1999-02-16 EP EP99934367A patent/EP1057207B1/en not_active Expired - Lifetime
- 1999-02-16 AT AT99934367T patent/ATE269586T1/de not_active IP Right Cessation
- 1999-02-16 WO PCT/US1999/003229 patent/WO1999043017A1/en not_active Ceased
- 1999-02-16 KR KR10-2000-7008726A patent/KR100388529B1/ko not_active Expired - Fee Related
- 1999-02-16 JP JP2000532862A patent/JP3822055B2/ja not_active Expired - Fee Related
- 1999-02-16 AU AU32939/99A patent/AU3293999A/en not_active Abandoned
- 1999-03-15 TW TW088102447A patent/TW523830B/zh active
-
2000
- 2000-06-19 US US09/597,659 patent/US6227141B1/en not_active Expired - Lifetime
-
2003
- 2003-05-26 JP JP2003147766A patent/JP4217883B2/ja not_active Expired - Fee Related
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