JP3813640B2 - メモリ - Google Patents

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Publication number
JP3813640B2
JP3813640B2 JP29465394A JP29465394A JP3813640B2 JP 3813640 B2 JP3813640 B2 JP 3813640B2 JP 29465394 A JP29465394 A JP 29465394A JP 29465394 A JP29465394 A JP 29465394A JP 3813640 B2 JP3813640 B2 JP 3813640B2
Authority
JP
Japan
Prior art keywords
cell
program
array
gate
cells
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP29465394A
Other languages
English (en)
Japanese (ja)
Other versions
JPH07192478A (ja
Inventor
シェイン・シィ・ホールマー
リー・イー・クリーブランド
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Advanced Micro Devices Inc
Original Assignee
Advanced Micro Devices Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=22577486&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=JP3813640(B2) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Advanced Micro Devices Inc filed Critical Advanced Micro Devices Inc
Publication of JPH07192478A publication Critical patent/JPH07192478A/ja
Application granted granted Critical
Publication of JP3813640B2 publication Critical patent/JP3813640B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
    • G11C11/5642—Sensing or reading circuits; Data output circuits
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is DC
    • G05F3/10—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/24—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
    • G11C11/5628—Programming or writing circuits; Data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C2211/56—Indexing scheme relating to G11C11/56 and sub-groups for features not covered by these groups
    • G11C2211/563—Multilevel memory reading aspects
    • G11C2211/5634—Reference cells

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Automation & Control Theory (AREA)
  • Read Only Memory (AREA)
JP29465394A 1993-12-01 1994-11-29 メモリ Expired - Lifetime JP3813640B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/160,582 US5828601A (en) 1993-12-01 1993-12-01 Programmed reference
US160582 1993-12-01

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2006114736A Division JP2006196184A (ja) 1993-12-01 2006-04-18 アレイセルのしきい値電圧を検出する方法およびメモリ

Publications (2)

Publication Number Publication Date
JPH07192478A JPH07192478A (ja) 1995-07-28
JP3813640B2 true JP3813640B2 (ja) 2006-08-23

Family

ID=22577486

Family Applications (2)

Application Number Title Priority Date Filing Date
JP29465394A Expired - Lifetime JP3813640B2 (ja) 1993-12-01 1994-11-29 メモリ
JP2006114736A Pending JP2006196184A (ja) 1993-12-01 2006-04-18 アレイセルのしきい値電圧を検出する方法およびメモリ

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2006114736A Pending JP2006196184A (ja) 1993-12-01 2006-04-18 アレイセルのしきい値電圧を検出する方法およびメモリ

Country Status (6)

Country Link
US (1) US5828601A (enExample)
EP (1) EP0656628B1 (enExample)
JP (2) JP3813640B2 (enExample)
KR (1) KR100357444B1 (enExample)
DE (1) DE69432452T2 (enExample)
TW (1) TW302479B (enExample)

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US6222762B1 (en) 1992-01-14 2001-04-24 Sandisk Corporation Multi-state memory
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IL125604A (en) 1997-07-30 2004-03-28 Saifun Semiconductors Ltd Non-volatile electrically erasable and programmble semiconductor memory cell utilizing asymmetrical charge
US6768165B1 (en) 1997-08-01 2004-07-27 Saifun Semiconductors Ltd. Two bit non-volatile electrically erasable and programmable semiconductor memory cell utilizing asymmetrical charge trapping
KR100339023B1 (ko) 1998-03-28 2002-09-18 주식회사 하이닉스반도체 문턱전압을조절할수있는플래쉬메모리장치의센싱회로
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FR2794277B1 (fr) * 1999-05-25 2001-08-10 St Microelectronics Sa Memoire morte a faible consommation
US6215702B1 (en) 2000-02-16 2001-04-10 Advanced Micro Devices, Inc. Method of maintaining constant erasing speeds for non-volatile memory cells
JP3776307B2 (ja) * 2000-04-26 2006-05-17 沖電気工業株式会社 不揮発性メモリアナログ電圧書き込み回路
US6928001B2 (en) 2000-12-07 2005-08-09 Saifun Semiconductors Ltd. Programming and erasing methods for a non-volatile memory cell
US6396741B1 (en) 2000-05-04 2002-05-28 Saifun Semiconductors Ltd. Programming of nonvolatile memory cells
US6490204B2 (en) * 2000-05-04 2002-12-03 Saifun Semiconductors Ltd. Programming and erasing methods for a reference cell of an NROM array
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US6466480B2 (en) * 2001-03-27 2002-10-15 Micron Technology, Inc. Method and apparatus for trimming non-volatile memory cells
IL148960A (en) * 2001-04-05 2005-09-25 Saifun Semiconductors Ltd Method for programming a reference cell
US6584017B2 (en) 2001-04-05 2003-06-24 Saifun Semiconductors Ltd. Method for programming a reference cell
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US6643169B2 (en) * 2001-09-18 2003-11-04 Intel Corporation Variable level memory
US6678192B2 (en) 2001-11-02 2004-01-13 Sandisk Corporation Error management for writable tracking storage units
DE60134870D1 (de) * 2001-12-28 2008-08-28 St Microelectronics Srl Programmierverfahren für eine Multibitspeicherzelle
US6975536B2 (en) * 2002-01-31 2005-12-13 Saifun Semiconductors Ltd. Mass storage array and methods for operation thereof
US7190620B2 (en) 2002-01-31 2007-03-13 Saifun Semiconductors Ltd. Method for operating a memory device
US6700818B2 (en) 2002-01-31 2004-03-02 Saifun Semiconductors Ltd. Method for operating a memory device
US6917544B2 (en) 2002-07-10 2005-07-12 Saifun Semiconductors Ltd. Multiple use memory chip
US6826107B2 (en) 2002-08-01 2004-11-30 Saifun Semiconductors Ltd. High voltage insertion in flash memory cards
US6992932B2 (en) 2002-10-29 2006-01-31 Saifun Semiconductors Ltd Method circuit and system for read error detection in a non-volatile memory array
US7136304B2 (en) 2002-10-29 2006-11-14 Saifun Semiconductor Ltd Method, system and circuit for programming a non-volatile memory array
US6963505B2 (en) * 2002-10-29 2005-11-08 Aifun Semiconductors Ltd. Method circuit and system for determining a reference voltage
US6967896B2 (en) 2003-01-30 2005-11-22 Saifun Semiconductors Ltd Address scramble
US7178004B2 (en) 2003-01-31 2007-02-13 Yan Polansky Memory array programming circuit and a method for using the circuit
US7142464B2 (en) 2003-04-29 2006-11-28 Saifun Semiconductors Ltd. Apparatus and methods for multi-level sensing in a memory array
US7237074B2 (en) * 2003-06-13 2007-06-26 Sandisk Corporation Tracking cells for a memory system
US7123532B2 (en) 2003-09-16 2006-10-17 Saifun Semiconductors Ltd. Operating array cells with matched reference cells
US6954393B2 (en) * 2003-09-16 2005-10-11 Saifun Semiconductors Ltd. Reading array cell with matched reference cell
US7301807B2 (en) 2003-10-23 2007-11-27 Sandisk Corporation Writable tracking cells
US7652930B2 (en) 2004-04-01 2010-01-26 Saifun Semiconductors Ltd. Method, circuit and system for erasing one or more non-volatile memory cells
US7755938B2 (en) * 2004-04-19 2010-07-13 Saifun Semiconductors Ltd. Method for reading a memory array with neighbor effect cancellation
US7366025B2 (en) 2004-06-10 2008-04-29 Saifun Semiconductors Ltd. Reduced power programming of non-volatile cells
US7317633B2 (en) 2004-07-06 2008-01-08 Saifun Semiconductors Ltd Protection of NROM devices from charge damage
US7095655B2 (en) 2004-08-12 2006-08-22 Saifun Semiconductors Ltd. Dynamic matching of signal path and reference path for sensing
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US7638850B2 (en) 2004-10-14 2009-12-29 Saifun Semiconductors Ltd. Non-volatile memory structure and method of fabrication
US7257025B2 (en) * 2004-12-09 2007-08-14 Saifun Semiconductors Ltd Method for reading non-volatile memory cells
US7535765B2 (en) 2004-12-09 2009-05-19 Saifun Semiconductors Ltd. Non-volatile memory device and method for reading cells
EP1831892A4 (en) * 2004-12-23 2009-06-10 Atmel Corp SYSTEM FOR IMPLEMENTING QUICK TEST DURING THE ADJUSTMENT OF FLASH REFERENCE CELLS
EP1686592A3 (en) 2005-01-19 2007-04-25 Saifun Semiconductors Ltd. Partial erase verify
US8053812B2 (en) * 2005-03-17 2011-11-08 Spansion Israel Ltd Contact in planar NROM technology
US8400841B2 (en) 2005-06-15 2013-03-19 Spansion Israel Ltd. Device to program adjacent storage cells of different NROM cells
US7184313B2 (en) 2005-06-17 2007-02-27 Saifun Semiconductors Ltd. Method circuit and system for compensating for temperature induced margin loss in non-volatile memory cells
US7786512B2 (en) 2005-07-18 2010-08-31 Saifun Semiconductors Ltd. Dense non-volatile memory array and method of fabrication
US7668017B2 (en) 2005-08-17 2010-02-23 Saifun Semiconductors Ltd. Method of erasing non-volatile memory cells
US7221138B2 (en) * 2005-09-27 2007-05-22 Saifun Semiconductors Ltd Method and apparatus for measuring charge pump output current
JP2007164934A (ja) * 2005-12-16 2007-06-28 Fujitsu Ltd 不揮発性半導体記憶装置
US7352627B2 (en) 2006-01-03 2008-04-01 Saifon Semiconductors Ltd. Method, system, and circuit for operating a non-volatile memory array
KR100772389B1 (ko) * 2006-01-12 2007-11-01 삼성전자주식회사 메모리 인식 장치
US7808818B2 (en) 2006-01-12 2010-10-05 Saifun Semiconductors Ltd. Secondary injection for NROM
US7692961B2 (en) 2006-02-21 2010-04-06 Saifun Semiconductors Ltd. Method, circuit and device for disturb-control of programming nonvolatile memory cells by hot-hole injection (HHI) and by channel hot-electron (CHE) injection
US7760554B2 (en) 2006-02-21 2010-07-20 Saifun Semiconductors Ltd. NROM non-volatile memory and mode of operation
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US7638835B2 (en) * 2006-02-28 2009-12-29 Saifun Semiconductors Ltd. Double density NROM with nitride strips (DDNS)
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KR102111510B1 (ko) * 2014-04-10 2020-05-19 에스케이하이닉스 주식회사 전자 장치
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Also Published As

Publication number Publication date
EP0656628A2 (en) 1995-06-07
TW302479B (enExample) 1997-04-11
US5828601A (en) 1998-10-27
KR950020743A (ko) 1995-07-24
EP0656628A3 (en) 1995-08-09
DE69432452D1 (de) 2003-05-15
EP0656628B1 (en) 2003-04-09
JPH07192478A (ja) 1995-07-28
JP2006196184A (ja) 2006-07-27
KR100357444B1 (ko) 2003-01-24
DE69432452T2 (de) 2004-03-11

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