DE60134870D1 - Programmierverfahren für eine Multibitspeicherzelle - Google Patents

Programmierverfahren für eine Multibitspeicherzelle

Info

Publication number
DE60134870D1
DE60134870D1 DE60134870T DE60134870T DE60134870D1 DE 60134870 D1 DE60134870 D1 DE 60134870D1 DE 60134870 T DE60134870 T DE 60134870T DE 60134870 T DE60134870 T DE 60134870T DE 60134870 D1 DE60134870 D1 DE 60134870D1
Authority
DE
Germany
Prior art keywords
memory cell
bit memory
programming method
programming
bit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60134870T
Other languages
English (en)
Inventor
Sandre Guido De
Marco Poles
David Iezzi
Marco Pasotti
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SRL
Original Assignee
STMicroelectronics SRL
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics SRL filed Critical STMicroelectronics SRL
Application granted granted Critical
Publication of DE60134870D1 publication Critical patent/DE60134870D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
    • G11C11/5628—Programming or writing circuits; Data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C2211/56—Indexing scheme relating to G11C11/56 and sub-groups for features not covered by these groups
    • G11C2211/564—Miscellaneous aspects
    • G11C2211/5641—Multilevel memory having cells with different number of storage levels

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Read Only Memory (AREA)
DE60134870T 2001-12-28 2001-12-28 Programmierverfahren für eine Multibitspeicherzelle Expired - Lifetime DE60134870D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP01830827A EP1324342B1 (de) 2001-12-28 2001-12-28 Programmierverfahren für eine Multibitspeicherzelle

Publications (1)

Publication Number Publication Date
DE60134870D1 true DE60134870D1 (de) 2008-08-28

Family

ID=8184854

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60134870T Expired - Lifetime DE60134870D1 (de) 2001-12-28 2001-12-28 Programmierverfahren für eine Multibitspeicherzelle

Country Status (3)

Country Link
US (1) US7088614B2 (de)
EP (1) EP1324342B1 (de)
DE (1) DE60134870D1 (de)

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0935255A2 (de) * 1989-04-13 1999-08-11 SanDisk Corporation EEprom-System mit Blocklöschung
US6002614A (en) * 1991-02-08 1999-12-14 Btg International Inc. Memory apparatus including programmable non-volatile multi-bit memory cell, and apparatus and method for demarcating memory states of the cell
US6222762B1 (en) * 1992-01-14 2001-04-24 Sandisk Corporation Multi-state memory
US5828601A (en) * 1993-12-01 1998-10-27 Advanced Micro Devices, Inc. Programmed reference
DE69626654T2 (de) * 1995-09-29 2004-02-05 Intel Corporation, Santa Clara Mehrfaches schreiben pro einfachem löschen in nichtflüchtigem speicher
US5687114A (en) * 1995-10-06 1997-11-11 Agate Semiconductor, Inc. Integrated circuit for storage and retrieval of multiple digital bits per nonvolatile memory cell
KR100205309B1 (ko) * 1996-07-23 1999-07-01 구본준 비휘발성 메모리셀 및 이 비휘발성 메모리셀을 프로그래밍하는 방법
JP3114630B2 (ja) * 1996-10-03 2000-12-04 日本電気株式会社 不揮発性半導体メモリおよび書込み読出し方法
KR20000051783A (ko) * 1999-01-26 2000-08-16 윤종용 비휘발성 메모리 소자
JP2000348493A (ja) * 1999-06-03 2000-12-15 Fujitsu Ltd 不揮発性メモリ回路
DE60102203D1 (de) * 2000-12-15 2004-04-08 St Microelectronics Srl Programmierverfahren für eine Mehrpegelspeicherzelle
US6522580B2 (en) * 2001-06-27 2003-02-18 Sandisk Corporation Operating techniques for reducing effects of coupling between storage elements of a non-volatile memory operated in multiple data states
EP1298670B1 (de) * 2001-09-28 2007-03-07 STMicroelectronics S.r.l. Verfahren zum Speichern und Lesen von Daten in einem nichtflüchtigen Mehrpegelspeicher mit einer nichtbinären Anzahl von Pegeln und dazugehörige Schaltungsarchitektur
US6643181B2 (en) * 2001-10-24 2003-11-04 Saifun Semiconductors Ltd. Method for erasing a memory cell
US6836432B1 (en) * 2002-02-11 2004-12-28 Advanced Micro Devices, Inc. Partial page programming of multi level flash
US6714448B2 (en) * 2002-07-02 2004-03-30 Atmel Corporation Method of programming a multi-level memory device

Also Published As

Publication number Publication date
EP1324342B1 (de) 2008-07-16
EP1324342A1 (de) 2003-07-02
US20030159014A1 (en) 2003-08-21
US7088614B2 (en) 2006-08-08

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition