DE60042811D1 - Herstellungsverfahren für eine ferroelektrische Speichervorrichtung - Google Patents
Herstellungsverfahren für eine ferroelektrische SpeichervorrichtungInfo
- Publication number
- DE60042811D1 DE60042811D1 DE60042811T DE60042811T DE60042811D1 DE 60042811 D1 DE60042811 D1 DE 60042811D1 DE 60042811 T DE60042811 T DE 60042811T DE 60042811 T DE60042811 T DE 60042811T DE 60042811 D1 DE60042811 D1 DE 60042811D1
- Authority
- DE
- Germany
- Prior art keywords
- manufacturing
- memory device
- ferroelectric memory
- ferroelectric
- memory
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000004519 manufacturing process Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
- H01L27/105—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
- H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
- H01L21/0337—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/314—Inorganic layers
- H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
- H01L21/31691—Inorganic layers composed of oxides or glassy oxides or oxide based glass with perovskite structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/55—Capacitors with a dielectric comprising a perovskite structure material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/60—Electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
- H10B53/30—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors characterised by the memory core region
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
- H01L21/02197—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides the material having a perovskite structure, e.g. BaTiO3
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Materials Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Inorganic Chemistry (AREA)
- Semiconductor Memories (AREA)
- Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15734399 | 1999-06-04 | ||
JP15734499 | 1999-06-04 | ||
JP2000078545 | 2000-03-21 | ||
PCT/JP2000/003590 WO2000075992A1 (fr) | 1999-06-04 | 2000-06-02 | Dispositif memoire ferroelectrique et procede de fabrication d'un tel dispositif |
Publications (1)
Publication Number | Publication Date |
---|---|
DE60042811D1 true DE60042811D1 (de) | 2009-10-08 |
Family
ID=27321147
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE60042811T Expired - Lifetime DE60042811D1 (de) | 1999-06-04 | 2000-06-02 | Herstellungsverfahren für eine ferroelektrische Speichervorrichtung |
Country Status (8)
Country | Link |
---|---|
US (2) | US6420190B1 (de) |
EP (1) | EP1115156B1 (de) |
JP (1) | JP4045406B2 (de) |
KR (1) | KR100457121B1 (de) |
CN (2) | CN100431137C (de) |
DE (1) | DE60042811D1 (de) |
TW (1) | TW473998B (de) |
WO (1) | WO2000075992A1 (de) |
Families Citing this family (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6835178B1 (en) * | 1999-06-23 | 2004-12-28 | Hologic, Inc. | Ultrasonic bone testing with copolymer transducers |
JP3901432B2 (ja) * | 2000-08-22 | 2007-04-04 | セイコーエプソン株式会社 | 強誘電体キャパシタを有するメモリセルアレイおよびその製造方法 |
US6756620B2 (en) * | 2001-06-29 | 2004-06-29 | Intel Corporation | Low-voltage and interface damage-free polymer memory device |
US6858862B2 (en) * | 2001-06-29 | 2005-02-22 | Intel Corporation | Discrete polymer memory array and method of making same |
US6624457B2 (en) | 2001-07-20 | 2003-09-23 | Intel Corporation | Stepped structure for a multi-rank, stacked polymer memory device and method of making same |
US6960479B2 (en) * | 2001-07-20 | 2005-11-01 | Intel Corporation | Stacked ferroelectric memory device and method of making same |
US6798003B2 (en) * | 2001-07-20 | 2004-09-28 | Intel Corporation | Reliable adhesion layer interface structure for polymer memory electrode and method of making same |
EP1302441B1 (de) * | 2001-10-10 | 2007-01-03 | Rohm And Haas Company | Verbessertes Verfahren zur Herstellung von Lithiumborohydrid |
US7727777B2 (en) * | 2002-05-31 | 2010-06-01 | Ebrahim Andideh | Forming ferroelectric polymer memories |
US6531325B1 (en) * | 2002-06-04 | 2003-03-11 | Sharp Laboratories Of America, Inc. | Memory transistor and method of fabricating same |
JP2004031728A (ja) * | 2002-06-27 | 2004-01-29 | Matsushita Electric Ind Co Ltd | 記憶装置 |
US7049153B2 (en) * | 2003-04-23 | 2006-05-23 | Micron Technology, Inc. | Polymer-based ferroelectric memory |
JP4590854B2 (ja) | 2003-10-28 | 2010-12-01 | セイコーエプソン株式会社 | 圧電体デバイスの製造方法 |
EP1700331A1 (de) * | 2003-12-22 | 2006-09-13 | Koninklijke Philips Electronics N.V. | Verfahren zur strukturierung einer ferroelektrischen polymerschicht |
JP2005327919A (ja) * | 2004-05-14 | 2005-11-24 | Seiko Epson Corp | デバイスの製造方法及びデバイス、電気光学素子、プリンタ |
EP1675162A3 (de) * | 2004-12-27 | 2007-05-30 | Seiko Epson Corporation | Ferroelektrische Schicht, Herstellungsverfahren einer ferroelektrischen Schicht, ferrroelektrischer Kondensator, ferroelektrischer Speicher |
KR100719345B1 (ko) * | 2005-04-18 | 2007-05-17 | 삼성전자주식회사 | 자기 기억 장치의 형성 방법 |
NO324539B1 (no) * | 2005-06-14 | 2007-11-19 | Thin Film Electronics Asa | Fremgangsmate i fabrikasjonen av en ferroelektrisk minneinnretning |
KR100682950B1 (ko) | 2005-07-28 | 2007-02-15 | 삼성전자주식회사 | 강유전체 기록매체 및 그 제조 방법 |
JP4999185B2 (ja) * | 2008-03-04 | 2012-08-15 | 富士フイルム株式会社 | ドライエッチング方法及びドライエッチング装置 |
JP2011199106A (ja) * | 2010-03-23 | 2011-10-06 | Seiko Epson Corp | 圧電素子、圧電アクチュエーター、液滴噴射ヘッド及び液滴噴射装置並びに圧電素子の製造方法 |
KR20210050630A (ko) * | 2019-10-28 | 2021-05-10 | 삼성전자주식회사 | 반도체 메모리 소자 |
CN113659073B (zh) * | 2020-05-12 | 2024-04-30 | 中芯国际集成电路制造(上海)有限公司 | 非易失性存储装置及其形成方法 |
Family Cites Families (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5423285A (en) * | 1991-02-25 | 1995-06-13 | Olympus Optical Co., Ltd. | Process for fabricating materials for ferroelectric, high dielectric constant, and integrated circuit applications |
US5627013A (en) * | 1991-11-14 | 1997-05-06 | Rohm Co., Ltd. | Method of forming a fine pattern of ferroelectric film |
JP2851193B2 (ja) | 1991-11-14 | 1999-01-27 | ローム株式会社 | 強誘電体薄膜微細パターン形成方法 |
US5335138A (en) * | 1993-02-12 | 1994-08-02 | Micron Semiconductor, Inc. | High dielectric constant capacitor and method of manufacture |
JPH07273216A (ja) | 1994-03-30 | 1995-10-20 | Toshiba Corp | 金属酸化膜の形成方法 |
KR0139876B1 (ko) * | 1993-09-14 | 1998-08-17 | 사토 후미오 | 금속산화막의 형성방법 |
JPH0786270A (ja) | 1993-09-14 | 1995-03-31 | Toshiba Corp | 金属酸化膜の形成方法 |
JP3130757B2 (ja) | 1995-03-27 | 2001-01-31 | 富士通株式会社 | キャパシタ電極用薄膜の形成方法、半導体装置及びその製造方法 |
JP3176840B2 (ja) | 1996-03-15 | 2001-06-18 | 富士通株式会社 | 半導体装置の製造方法 |
JP3488007B2 (ja) | 1996-03-05 | 2004-01-19 | 富士通株式会社 | 薄膜形成方法、半導体装置及びその製造方法 |
JP3621162B2 (ja) | 1995-09-25 | 2005-02-16 | 富士通株式会社 | 容量素子及びその製造方法、並びに半導体装置 |
US5874364A (en) * | 1995-03-27 | 1999-02-23 | Fujitsu Limited | Thin film deposition method, capacitor device and method for fabricating the same, and semiconductor device and method for fabricating the same |
JP3672115B2 (ja) | 1995-09-19 | 2005-07-13 | 富士通株式会社 | 薄膜形成方法及び半導体装置の製造方法 |
JPH09223778A (ja) * | 1996-02-16 | 1997-08-26 | Hitachi Ltd | 薄膜キャパシタおよびその製造方法 |
US5990507A (en) * | 1996-07-09 | 1999-11-23 | Kabushiki Kaisha Toshiba | Semiconductor device having ferroelectric capacitor structures |
JPH1050956A (ja) * | 1996-08-01 | 1998-02-20 | Hitachi Ltd | 半導体集積回路装置の製造方法 |
JPH10107223A (ja) | 1996-10-02 | 1998-04-24 | Texas Instr Japan Ltd | 誘電体キャパシタ及び誘電体メモリ装置と、これらの製造方法 |
JPH118355A (ja) * | 1997-06-16 | 1999-01-12 | Nec Corp | 強誘電体メモリ |
JP3180740B2 (ja) * | 1997-11-11 | 2001-06-25 | 日本電気株式会社 | キャパシタの製造方法 |
-
2000
- 2000-06-02 DE DE60042811T patent/DE60042811D1/de not_active Expired - Lifetime
- 2000-06-02 WO PCT/JP2000/003590 patent/WO2000075992A1/ja active IP Right Grant
- 2000-06-02 CN CNB2004100397953A patent/CN100431137C/zh not_active Expired - Fee Related
- 2000-06-02 KR KR10-2001-7001493A patent/KR100457121B1/ko not_active IP Right Cessation
- 2000-06-02 EP EP00935527A patent/EP1115156B1/de not_active Expired - Lifetime
- 2000-06-02 JP JP2001502168A patent/JP4045406B2/ja not_active Expired - Fee Related
- 2000-06-02 CN CNB008016119A patent/CN1149678C/zh not_active Expired - Fee Related
- 2000-06-02 US US09/762,222 patent/US6420190B1/en not_active Expired - Fee Related
- 2000-06-03 TW TW089110886A patent/TW473998B/zh not_active IP Right Cessation
-
2002
- 2002-05-24 US US10/153,925 patent/US6885050B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
EP1115156B1 (de) | 2009-08-26 |
CN1149678C (zh) | 2004-05-12 |
US20020142491A1 (en) | 2002-10-03 |
CN100431137C (zh) | 2008-11-05 |
EP1115156A1 (de) | 2001-07-11 |
KR20010072240A (ko) | 2001-07-31 |
US6885050B2 (en) | 2005-04-26 |
KR100457121B1 (ko) | 2004-11-16 |
JP4045406B2 (ja) | 2008-02-13 |
US6420190B1 (en) | 2002-07-16 |
CN1319254A (zh) | 2001-10-24 |
WO2000075992A1 (fr) | 2000-12-14 |
CN1574287A (zh) | 2005-02-02 |
EP1115156A4 (de) | 2003-11-05 |
TW473998B (en) | 2002-01-21 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition |