JP3785900B2 - 液晶表示装置とその製造方法 - Google Patents

液晶表示装置とその製造方法 Download PDF

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Publication number
JP3785900B2
JP3785900B2 JP2000134189A JP2000134189A JP3785900B2 JP 3785900 B2 JP3785900 B2 JP 3785900B2 JP 2000134189 A JP2000134189 A JP 2000134189A JP 2000134189 A JP2000134189 A JP 2000134189A JP 3785900 B2 JP3785900 B2 JP 3785900B2
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JP
Japan
Prior art keywords
liquid crystal
conductive layer
layer
wiring
crystal display
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Expired - Fee Related
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JP2000134189A
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English (en)
Japanese (ja)
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JP2001311954A5 (enExample
JP2001311954A (ja
Inventor
卓也 ▲高▼橋
寿輝 金子
克 田村
賢一 鬼沢
正倫 寺門
健一 茶原
孝洋 落合
勝 高畠
雄一 原野
英明 山本
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
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Hitachi Ltd
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Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP2000134189A priority Critical patent/JP3785900B2/ja
Publication of JP2001311954A publication Critical patent/JP2001311954A/ja
Publication of JP2001311954A5 publication Critical patent/JP2001311954A5/ja
Application granted granted Critical
Publication of JP3785900B2 publication Critical patent/JP3785900B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/15Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161Disposition
    • H01L2224/16151Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation

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  • Liquid Crystal (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Weting (AREA)
  • Thin Film Transistor (AREA)
JP2000134189A 2000-04-28 2000-04-28 液晶表示装置とその製造方法 Expired - Fee Related JP3785900B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2000134189A JP3785900B2 (ja) 2000-04-28 2000-04-28 液晶表示装置とその製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000134189A JP3785900B2 (ja) 2000-04-28 2000-04-28 液晶表示装置とその製造方法

Publications (3)

Publication Number Publication Date
JP2001311954A JP2001311954A (ja) 2001-11-09
JP2001311954A5 JP2001311954A5 (enExample) 2004-11-18
JP3785900B2 true JP3785900B2 (ja) 2006-06-14

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JP2000134189A Expired - Fee Related JP3785900B2 (ja) 2000-04-28 2000-04-28 液晶表示装置とその製造方法

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JP (1) JP3785900B2 (enExample)

Families Citing this family (35)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20030016051A (ko) 2001-08-20 2003-02-26 삼성전자주식회사 액정 표시 장치용 박막 트랜지스터 기판 및 그 제조 방법
JPWO2003036707A1 (ja) * 2001-10-22 2005-02-17 三菱瓦斯化学株式会社 アルミニウム/モリブデン積層膜のエッチング方法
JP2003149674A (ja) * 2001-11-13 2003-05-21 Hitachi Ltd 液晶表示装置
US7169461B2 (en) 2002-10-17 2007-01-30 Asahi Glass Company, Limited Laminate, a substrate with wires, an organic EL display element, a connection terminal for the organic EL display element and a method for producing each
JP4181853B2 (ja) 2002-11-15 2008-11-19 Nec液晶テクノロジー株式会社 積層膜の複合ウェットエッチング方法
JP2004356616A (ja) * 2003-05-28 2004-12-16 Samsung Electronics Co Ltd 配線用エッチング液及びこれを利用した薄膜トランジスタ表示板の製造方法
WO2006051608A1 (ja) * 2004-11-09 2006-05-18 Advanced Display Inc. エッチング液及びエッチング方法
KR101101456B1 (ko) 2004-03-09 2012-01-03 이데미쓰 고산 가부시키가이샤 박막 트랜지스터, 박막 트랜지스터 기판, 이들의 제조방법, 이들을 사용한 액정 표시 장치, 관련된 장치 및방법, 및 스퍼터링 타깃, 이것을 사용하여 성막한 투명도전막, 투명 전극, 및 관련된 장치 및 방법
KR101061850B1 (ko) * 2004-09-08 2011-09-02 삼성전자주식회사 박막 트랜지스터 표시판 및 그 제조방법
JP4749179B2 (ja) * 2005-02-24 2011-08-17 関東化学株式会社 チタン、アルミニウム金属積層膜エッチング液組成物
JP4804867B2 (ja) * 2005-10-18 2011-11-02 出光興産株式会社 透明導電膜、透明電極、電極基板及びその製造方法
JP4947942B2 (ja) * 2005-09-20 2012-06-06 出光興産株式会社 スパッタリングターゲット
CN103469167A (zh) * 2005-09-01 2013-12-25 出光兴产株式会社 溅射靶、透明导电膜、透明电极和电极基板及其制造方法
KR100870217B1 (ko) * 2005-11-29 2008-11-24 미쓰비시덴키 가부시키가이샤 에칭액 및 에칭방법
US8212953B2 (en) * 2005-12-26 2012-07-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
EP1843194A1 (en) 2006-04-06 2007-10-10 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device, semiconductor device, and electronic appliance
JP2008065300A (ja) * 2006-08-11 2008-03-21 Nec Lcd Technologies Ltd 液晶表示装置
JP5713204B2 (ja) * 2006-08-11 2015-05-07 Nltテクノロジー株式会社 液晶表示装置
TWI405875B (zh) * 2006-08-22 2013-08-21 Kanto Kagaku 鈦、鋁金屬層積膜之蝕刻液組成物
JP5010873B2 (ja) * 2006-08-23 2012-08-29 関東化学株式会社 チタン、アルミニウム金属積層膜エッチング液組成物
JP4747186B2 (ja) * 2008-06-02 2011-08-17 Nec液晶テクノロジー株式会社 積層膜の複合ウェットエッチング方法
JP5256868B2 (ja) * 2008-06-10 2013-08-07 日本精機株式会社 積層体及び有機elパネル
JP2011040593A (ja) * 2009-08-12 2011-02-24 Seiko Epson Corp 半導体装置ならびに半導体装置の製造方法
JP5452343B2 (ja) * 2010-04-27 2014-03-26 株式会社ジャパンディスプレイ 表示装置およびその製造方法
KR101583147B1 (ko) 2013-07-19 2016-01-06 주식회사 엘지화학 전극 적층체 및 유기 발광 소자
JP6441306B2 (ja) * 2014-02-24 2018-12-19 パイオニア株式会社 発光装置
KR102197854B1 (ko) 2014-05-13 2021-01-05 삼성디스플레이 주식회사 박막 트랜지스터, 이를 포함하는 표시기판 및 이의 제조방법
US20170278879A1 (en) * 2014-09-03 2017-09-28 Sharp Kabushiki Kaisha Method for manufacturing metal lamination film, method for manufacturing semiconductor device, and method for manufacturing liquid crystal display device
CN108399030B (zh) * 2018-02-06 2020-09-04 武汉华星光电半导体显示技术有限公司 电极结构及电极结构的制作方法
US10824285B2 (en) 2018-02-06 2020-11-03 Wuhan China Star Optoelectronics Semiconductor Display Technology Co., Ltd. Electrode structure and method for manufacturing the same
JP2018129313A (ja) * 2018-05-15 2018-08-16 パイオニア株式会社 発光装置
CN110752255A (zh) * 2018-07-23 2020-02-04 株式会社理光 金属氧化物、场效应晶体管及其制造方法
CN112216704A (zh) * 2019-07-12 2021-01-12 群创光电股份有限公司 线路结构以及包含其的电子装置
JP2020038846A (ja) * 2019-12-02 2020-03-12 パイオニア株式会社 発光装置
CN113985667B (zh) * 2021-10-12 2023-08-01 Tcl华星光电技术有限公司 阵列基板及其制备方法、液晶显示面板

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