JP3762304B2 - 低誘電率層間絶縁膜の形成方法 - Google Patents

低誘電率層間絶縁膜の形成方法 Download PDF

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Publication number
JP3762304B2
JP3762304B2 JP2002008476A JP2002008476A JP3762304B2 JP 3762304 B2 JP3762304 B2 JP 3762304B2 JP 2002008476 A JP2002008476 A JP 2002008476A JP 2002008476 A JP2002008476 A JP 2002008476A JP 3762304 B2 JP3762304 B2 JP 3762304B2
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film
group
dielectric constant
insulating film
interlayer insulating
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Expired - Lifetime
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JP2002256434A (ja
JP2002256434A5 (enExample
Inventor
ルイーズ ビンセント ジーン
レオナルド オニール マーク
ポール ウィザース，ジュニア ハワード
エドワード ベック スコット
ニコラス ビルティス レイモンド
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Air Products and Chemicals Inc
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Air Products and Chemicals Inc
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Priority claimed from US09/944,042 external-priority patent/US6583048B2/en
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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D183/00—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers
    • C09D183/04—Polysiloxanes
    • C09D183/06—Polysiloxanes containing silicon bound to oxygen-containing groups
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D1/00—Processes for applying liquids or other fluent materials
    • B05D1/60—Deposition of organic layers from vapour phase
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/401—Oxides containing silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H10P14/6336—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
    • H10P14/668—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials
    • H10P14/6681—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si
    • H10P14/6682—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si the compound being a silane, e.g. disilane, methylsilane or chlorosilane
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
    • H10P14/668—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials
    • H10P14/6681—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si
    • H10P14/6684—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si the compound comprising silicon and oxygen
    • H10P14/6686—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si the compound comprising silicon and oxygen the compound being a molecule comprising at least one silicon-oxygen bond and the compound having hydrogen or an organic group attached to the silicon or oxygen, e.g. a siloxane
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/6922—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/6922—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • H10P14/6924—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC the material being halogen doped silicon oxides, e.g. FSG

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Wood Science & Technology (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Formation Of Insulating Films (AREA)
  • Chemical Vapour Deposition (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP2002008476A 2001-01-17 2002-01-17 低誘電率層間絶縁膜の形成方法 Expired - Lifetime JP3762304B2 (ja)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US76126901A 2001-01-17 2001-01-17
US09/761269 2001-01-17
US09/944042 2001-08-31
US09/944,042 US6583048B2 (en) 2001-01-17 2001-08-31 Organosilicon precursors for interlayer dielectric films with low dielectric constants

Publications (3)

Publication Number Publication Date
JP2002256434A JP2002256434A (ja) 2002-09-11
JP2002256434A5 JP2002256434A5 (enExample) 2004-08-05
JP3762304B2 true JP3762304B2 (ja) 2006-04-05

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JP2002008476A Expired - Lifetime JP3762304B2 (ja) 2001-01-17 2002-01-17 低誘電率層間絶縁膜の形成方法

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Country Link
EP (1) EP1225194B2 (enExample)
JP (1) JP3762304B2 (enExample)
KR (1) KR100447684B1 (enExample)
CN (2) CN100410420C (enExample)
DE (1) DE02001014T1 (enExample)
IL (1) IL147609A (enExample)
SG (1) SG98468A1 (enExample)
TW (1) TWI235428B (enExample)

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CN115400930A (zh) * 2021-05-26 2022-11-29 江苏菲沃泰纳米科技股份有限公司 一种等离子体聚合涂层、制备方法及器件
KR102901182B1 (ko) * 2021-07-20 2025-12-16 에이에스엠 아이피 홀딩 비.브이. 실리콘 카바이드 층을 포함한 구조체를 형성하는 방법
WO2023064773A1 (en) * 2021-10-13 2023-04-20 Versum Materials Us, Llc Alkoxysilanes and dense organosilica films made therefrom
KR102771898B1 (ko) * 2021-12-09 2025-02-21 에스케이트리켐 주식회사 저 유전율 실리콘 함유 박막 형성용 전구체, 이를 이용한 저 유전율 실리콘 함유 박막 형성 방법 및 상기 저 유전율 실리콘 함유 박막을 포함하는 반도체 소자.
KR102913505B1 (ko) * 2023-06-08 2026-01-16 에스케이트리켐 주식회사 저 유전율 실리콘 함유 박막 형성용 전구체 및 이를 이용한 저 유전율 실리콘 함유 박막 형성 방법.
KR20250016873A (ko) * 2023-07-26 2025-02-04 에스케이트리켐 주식회사 저 유전율 박막 형성용 전구체 및 상기 전구체를 이용한 저 유전율 실리콘 함유 박막 형성 방법
CN121087464B (zh) * 2025-11-11 2026-01-23 研微(江苏)半导体科技有限公司 制备低介电常数薄膜的方法和半导体结构

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CN1644753A (zh) 2005-07-27
SG98468A1 (en) 2003-09-19
IL147609A (en) 2006-12-10
KR100447684B1 (ko) 2004-09-08
IL147609A0 (en) 2002-08-14
JP2002256434A (ja) 2002-09-11
CN1367205A (zh) 2002-09-04
EP1225194B1 (en) 2008-10-01
TWI235428B (en) 2005-07-01
CN100410420C (zh) 2008-08-13
CN1240780C (zh) 2006-02-08
KR20020062192A (ko) 2002-07-25
EP1225194B2 (en) 2013-09-18
EP1225194A3 (en) 2002-09-18
EP1225194A2 (en) 2002-07-24
DE02001014T1 (de) 2007-09-20

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