CN115400930A - 一种等离子体聚合涂层、制备方法及器件 - Google Patents
一种等离子体聚合涂层、制备方法及器件 Download PDFInfo
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- CN115400930A CN115400930A CN202110580670.5A CN202110580670A CN115400930A CN 115400930 A CN115400930 A CN 115400930A CN 202110580670 A CN202110580670 A CN 202110580670A CN 115400930 A CN115400930 A CN 115400930A
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- 125000003118 aryl group Chemical group 0.000 claims abstract description 23
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- 125000005843 halogen group Chemical group 0.000 claims description 17
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims description 17
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 claims description 15
- DQZNLOXENNXVAD-UHFFFAOYSA-N trimethoxy-[2-(7-oxabicyclo[4.1.0]heptan-4-yl)ethyl]silane Chemical compound C1C(CC[Si](OC)(OC)OC)CCC2OC21 DQZNLOXENNXVAD-UHFFFAOYSA-N 0.000 claims description 15
- 238000000034 method Methods 0.000 claims description 14
- 125000002947 alkylene group Chemical group 0.000 claims description 12
- 125000001424 substituent group Chemical group 0.000 claims description 10
- ZNOCGWVLWPVKAO-UHFFFAOYSA-N trimethoxy(phenyl)silane Chemical compound CO[Si](OC)(OC)C1=CC=CC=C1 ZNOCGWVLWPVKAO-UHFFFAOYSA-N 0.000 claims description 10
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- AHUXYBVKTIBBJW-UHFFFAOYSA-N dimethoxy(diphenyl)silane Chemical compound C=1C=CC=CC=1[Si](OC)(OC)C1=CC=CC=C1 AHUXYBVKTIBBJW-UHFFFAOYSA-N 0.000 claims description 7
- 125000006736 (C6-C20) aryl group Chemical group 0.000 claims description 6
- GYUPEJSTJSFVRR-UHFFFAOYSA-N 3,3,4,4,5,5,6,6,6-nonafluorohexyl prop-2-enoate Chemical compound FC(F)(F)C(F)(F)C(F)(F)C(F)(F)CCOC(=O)C=C GYUPEJSTJSFVRR-UHFFFAOYSA-N 0.000 claims description 4
- CDXFIRXEAJABAZ-UHFFFAOYSA-N 3,3,4,4,5,5,6,6,7,7,8,8,8-tridecafluorooctyl 2-methylprop-2-enoate Chemical compound CC(=C)C(=O)OCCC(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)F CDXFIRXEAJABAZ-UHFFFAOYSA-N 0.000 claims description 4
- FQHLOOOXLDQLPF-UHFFFAOYSA-N 3,3,4,4,5,5,6,6,7,7,8,8,9,9,10,10,11,11,12,12,12-henicosafluorododecyl 2-methylprop-2-enoate Chemical compound CC(=C)C(=O)OCCC(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)F FQHLOOOXLDQLPF-UHFFFAOYSA-N 0.000 claims description 4
- SWTZSHBOMGAQKX-UHFFFAOYSA-N 3,3,4,4,5,5,6,6,7,7,8,8,9,9,10,10,11,11,12,12,13,13,14,14,14-pentacosafluorotetradecyl prop-2-enoate Chemical compound FC(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)CCOC(=O)C=C SWTZSHBOMGAQKX-UHFFFAOYSA-N 0.000 claims description 4
- RPDBRTLKDYJCCE-UHFFFAOYSA-N [4,4,5,5,6,6,7,7,8,9,9,9-dodecafluoro-2-hydroxy-8-(trifluoromethyl)nonyl] 2-methylprop-2-enoate Chemical compound CC(=C)C(=O)OCC(O)CC(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(C(F)(F)F)C(F)(F)F RPDBRTLKDYJCCE-UHFFFAOYSA-N 0.000 claims description 4
- JRMHUZLFQVKRNB-UHFFFAOYSA-N bis(ethenyl)-diphenylsilane Chemical compound C=1C=CC=CC=1[Si](C=C)(C=C)C1=CC=CC=C1 JRMHUZLFQVKRNB-UHFFFAOYSA-N 0.000 claims description 4
- YCITZMJNBYYMJO-UHFFFAOYSA-N chloro(diphenyl)silicon Chemical compound C=1C=CC=CC=1[Si](Cl)C1=CC=CC=C1 YCITZMJNBYYMJO-UHFFFAOYSA-N 0.000 claims description 4
- OSXYHAQZDCICNX-UHFFFAOYSA-N dichloro(diphenyl)silane Chemical compound C=1C=CC=CC=1[Si](Cl)(Cl)C1=CC=CC=C1 OSXYHAQZDCICNX-UHFFFAOYSA-N 0.000 claims description 4
- OVOIHGSHJGMSMZ-UHFFFAOYSA-N ethenyl(triphenyl)silane Chemical compound C=1C=CC=CC=1[Si](C=1C=CC=CC=1)(C=C)C1=CC=CC=C1 OVOIHGSHJGMSMZ-UHFFFAOYSA-N 0.000 claims description 4
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- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 claims description 4
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 claims description 4
- ORVMIVQULIKXCP-UHFFFAOYSA-N trichloro(phenyl)silane Chemical compound Cl[Si](Cl)(Cl)C1=CC=CC=C1 ORVMIVQULIKXCP-UHFFFAOYSA-N 0.000 claims description 4
- WIMBFQPYJQMSCP-UHFFFAOYSA-N (1,2,2,3,3,4,4,5,5,6,6-undecafluorocyclohexyl) 2-methylprop-2-enoate Chemical compound CC(=C)C(=O)OC1(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C1(F)F WIMBFQPYJQMSCP-UHFFFAOYSA-N 0.000 claims description 3
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- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 claims description 2
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- DRRZZMBHJXLZRS-UHFFFAOYSA-N n-[3-[dimethoxy(methyl)silyl]propyl]cyclohexanamine Chemical compound CO[Si](C)(OC)CCCNC1CCCCC1 DRRZZMBHJXLZRS-UHFFFAOYSA-N 0.000 claims 1
- HQYALQRYBUJWDH-UHFFFAOYSA-N trimethoxy(propyl)silane Chemical compound CCC[Si](OC)(OC)OC HQYALQRYBUJWDH-UHFFFAOYSA-N 0.000 claims 1
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- -1 methoxy, ethoxy, propoxy, butoxy, isopropoxy Chemical group 0.000 description 8
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- BPSIOYPQMFLKFR-UHFFFAOYSA-N trimethoxy-[3-(oxiran-2-ylmethoxy)propyl]silane Chemical compound CO[Si](OC)(OC)CCCOCC1CO1 BPSIOYPQMFLKFR-UHFFFAOYSA-N 0.000 description 6
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- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 3
- 125000004399 C1-C4 alkenyl group Chemical group 0.000 description 2
- 125000003545 alkoxy group Chemical group 0.000 description 2
- 125000005336 allyloxy group Chemical group 0.000 description 2
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- ZUOUZKKEUPVFJK-UHFFFAOYSA-N diphenyl Chemical compound C1=CC=CC=C1C1=CC=CC=C1 ZUOUZKKEUPVFJK-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 2
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- 125000001449 isopropyl group Chemical group [H]C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 2
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- 239000000047 product Substances 0.000 description 2
- 125000004368 propenyl group Chemical group C(=CC)* 0.000 description 2
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- QUKRIOLKOHUUBM-UHFFFAOYSA-N 3,3,4,4,5,5,6,6,7,7,8,8,9,9,10,10,10-heptadecafluorodecyl prop-2-enoate Chemical compound FC(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)CCOC(=O)C=C QUKRIOLKOHUUBM-UHFFFAOYSA-N 0.000 description 1
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Classifications
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- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D7/00—Processes, other than flocking, specially adapted for applying liquids or other fluent materials to particular surfaces or for applying particular liquids or other fluent materials
- B05D7/24—Processes, other than flocking, specially adapted for applying liquids or other fluent materials to particular surfaces or for applying particular liquids or other fluent materials for applying particular liquids or other fluent materials
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D1/00—Processes for applying liquids or other fluent materials
- B05D1/60—Deposition of organic layers from vapour phase
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D1/00—Processes for applying liquids or other fluent materials
- B05D1/62—Plasma-deposition of organic layers
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D5/00—Processes for applying liquids or other fluent materials to surfaces to obtain special surface effects, finishes or structures
- B05D5/08—Processes for applying liquids or other fluent materials to surfaces to obtain special surface effects, finishes or structures to obtain an anti-friction or anti-adhesive surface
- B05D5/083—Processes for applying liquids or other fluent materials to surfaces to obtain special surface effects, finishes or structures to obtain an anti-friction or anti-adhesive surface involving the use of fluoropolymers
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D133/00—Coating compositions based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides, or nitriles thereof; Coating compositions based on derivatives of such polymers
- C09D133/04—Homopolymers or copolymers of esters
- C09D133/14—Homopolymers or copolymers of esters of esters containing halogen, nitrogen, sulfur or oxygen atoms in addition to the carboxy oxygen
- C09D133/16—Homopolymers or copolymers of esters containing halogen atoms
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D183/00—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers
- C09D183/04—Polysiloxanes
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D183/00—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers
- C09D183/04—Polysiloxanes
- C09D183/06—Polysiloxanes containing silicon bound to oxygen-containing groups
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/48—Ion implantation
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
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- C—CHEMISTRY; METALLURGY
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Abstract
本发明具体实施方式提供一种等离子体聚合涂层,所述等离子体聚合涂层由基材接触包含具有芳香基或环氧基的有机硅烷单体的等离子体沉积形成,由包含该单体的等离子体沉积形成的涂层,可有效提升其涂层的耐磨性。
Description
技术领域
本发明属于等离子化学领域,具体涉及一种等离子体聚合涂层、制备方法及器件。
背景技术
等离子体增强化学的工艺(PECVD)借助微波或射频等使含有薄膜成分的气体电离,在局部形成等离子体,而等离子体化学活性很强,很容易发生反应,可在基材上沉积出所期望的纳米抗水保护涂层,该保护涂层均匀,涂层制备温度低,涂层厚度薄、应力小,对基材表面几乎没有损伤和基材性能几乎没有影响。
通过PECVD在基材表面形成防水保护涂层已被越来越多的应用,目前对于所述防水保护涂层的研究主要集中在如何提高其防水性能,以及如何提高涂层与基材的结合力,而对于所述通过PECVD形成的防水保护涂层,涂层薄,当受到外力刮擦或摩擦时,容易受到损伤而影响其防护性能,对于如何提高其涂层自身的耐磨性能暂未见相关报道。
发明内容
针对以上现有技术中的问题,本发明的具体实施方式提供一种提升耐磨性的等离子体聚合涂层、制备方法及器件,具体方案如下:
一种等离子体聚合涂层,所述涂层由基材接触反应性单体的等离子体反应沉积形成,
其中,所述反应性单体包括具有式(1)所示结构的单体,
式(1)中,R1、R2、R3和R4分别独立的选自于氢原子、卤素原子、C1-C20的取代或未取代的烃基、C1-C20的取代或未取代的烃氧基或C4-C20的芳香基;
其中R1、R2、R3和R4中的至少一个包含环氧基或为C4-C20的芳香基。
可选的,所述R1、R2、R3和R4分别独立的选自于氢原子、卤素原子、C1-C20的烃基、C1-C20的带有环氧结构取代基的烃基、C1-C20的烃氧基、C1-C20的带有环氧结构取代基的烃氧基或C6-C20的芳基。
可选的,所述R1、R2、R3和R4分别独立的选自于氢原子、卤素原子、C1-C4的烷烃基、C1-C4的烷烃氧基、C1-C4的烯烃基、C1-C4的烯烃氧基或C6-C20的芳基;其中R1、R2、R3和R4中的至少一个为C6-C20的芳基。
可选的,所述芳基为苯基。
可选的,具有式(1)所示结构的单体选自于苯基三氯硅烷、氯二苯基硅烷、二苯二氯硅烷、三苯基乙烯基硅烷、二苯基二乙烯基硅烷、二苯基二甲氧基硅烷或三甲氧基苯基硅烷中的一种或几种。
可选的,所述R1、R2、R3和R4分别独立的选自于氢原子、卤素原子、C1-C4的烷烃基、C1-C4的烷烃氧基、C1-C4的烯烃基、C1-C4的烯烃氧基、C2-C10的环氧烃氧烃基或C2-C10的环氧烃基;其中R1、R2、R3和R4中的至少一个为C2-C10的环氧烃氧烃基或C2-C10的环氧烃基。
可选的,所述环氧为脂环族环氧。
可选的,具有式(1)所示结构的单体选自于3-(2,3-环氧丙氧)丙基甲基二甲氧基硅烷、3-(2,3-环氧丙氧)丙基三甲氧基硅烷、β-(3、4环氧环己基)-乙基三甲氧基硅烷或2-(3,4-环氧环己烷基)乙基三乙氧基硅烷中的一种或几种。
可选的,所述反应性单体还包括氟代烃、氟代丙烯酸酯或氟代硅烷中的一种或几种。
可选的,所述氟代丙烯酸酯的结构如式(2)所示,
其中,Z为连接部分,R5、R6和R7分别独立的选自于氢原子、卤素原子、C1-C10的烃基或C1-C10的卤原子取代烃基,x为1-20的整数。
可选的,所述Z为连接键、C1-C4的亚烷基或具有取代基的C1-C4的亚烷基,x在4以上。
可选的,所述R5、R6和R7分别独立的选自于氢原子或甲基。
可选的,所述氟代丙烯酸酯选自于3-(全氟-5-甲基己基)-2-羟基丙基甲基丙烯酸酯、2-(全氟癸基)乙基甲基丙烯酸酯、2-(全氟己基)乙基甲基丙烯酸酯、2-(全氟十二烷基)乙基丙烯酸酯、2-全氟辛基丙烯酸乙酯、1H,1H,2H,2H-全氟辛醇丙烯酸酯、2-(全氟丁基)乙基丙烯酸酯或(全氟环己基)甲基丙烯酸酯中的一种或几种。
可选的,所述基材为金属、塑料、织物、玻璃、电气组件、光学仪器或电气部件。
可选的,所述基材为玻璃屏。
一种任意以上所述的等离子体聚合涂层的制备方法,包括:
提供基材,将基材置于等离子体反应器中;将所述反应性单体汽化进入等离子体反应器,等离子体放电,在所述基材的表面等离子体聚合形成涂层。
可选的,所述等离子体为脉冲等离子体。
可选的,所述脉冲等离子体通过施加脉冲电压放电产生,其中,脉冲功率为10W~300W,脉冲占空比为0.1%~80%,等离子放电时间为100s~36000s。
一种器件,所述器件的至少部分表面具有任意以上所述的等离子体聚合涂层。
本发明具体实施方式的等离子体聚合涂层,由包含具有芳香基或环氧基的有机硅烷单体形成的等离子体聚合涂层,可有效提升等离子体聚合涂层的耐磨性。
具体实施方式
本发明具体实施方式的等离子体聚合涂层,所述涂层由基材接触反应性单体的等离子体反应沉积形成,
其中,所述反应性单体具有式(1)所示结构的单体,
式(1)中,R1、R2、R3和R4分别独立的选自于氢原子、卤素原子、C1-C20的取代或未取代的烃基、C1-C20的取代或未取代的烃氧基或C4-C20的芳香基;
其中R1、R2、R3和R4中的至少一个包含环氧基或为C4-C20的芳香基。
本发明的发明人研究发现,可能由于芳基芳香环的刚性作用,环氧基的高反应活性易于形成网络结构,由包含式(1)所示的具有芳基或环氧基的有机硅烷单体形成的等离子体聚合涂层,可有效提升等离子体聚合涂层的耐磨性。
本发明具体实施方式的等离子体聚合涂层,所述烃基可以是烷烃基、烯烃基或炔烃基,也可以是脂环烃基或芳烃基,所述烃氧基可以是烷烃氧基、烯烃氧基或炔烃氧基,也可以是脂环烃氧基或芳烃氧基。
本发明具体实施方式的等离子体聚合涂层,所述取代的取代基例如可以是卤素原子、环氧基、硝基、氰基、磺酸基、氨基、羧基、羟基、巯基、烃基、烃氧基或酰基等等,所述取代基可以是一个或两个以上。
本发明具体实施方式的等离子体聚合涂层,所述芳香基为芳基或杂芳基。
本发明具体实施方式的等离子体聚合涂层,在一些具体实施方式中,所述R1、R2、R3和R4分别独立的选自于氢原子、卤素原子、C1-C20的烃基、C1-C20的带有环氧结构取代基的烃基、C1-C20的烃氧基、C1-C20的带有环氧结构取代基的烃氧基或C6-C20的芳基。
本发明具体实施方式的等离子体聚合涂层,在一些具体实施方式中,所述R1、R2、R3和R4分别独立的选自于氢原子、卤素原子、C1-C4的烷烃基、C1-C4的烷烃氧基、C1-C4的烯烃基、C1-C4的烯烃氧基或C6-C20的芳基;其中R1、R2、R3和R4中的至少一个为C6-C20的芳基。作为举例,所述烷烃基例如可以是甲基、乙基、丙基、丁基或异丙基等,所述烷烃氧基例如可以是甲氧基、乙氧基、丙氧基、丁氧基或异丙氧基等,所述烯烃基可以是乙烯基、丙烯基或丁烯基等,所述烯烃氧基例如可以是2-(烯丙氧基),所述芳基例如可以是苯基、对甲苯基或联苯基等。更具体的,具有式(1)所示结构的单体选自于苯基三氯硅烷(CAS:98-13-5)、氯二苯基硅烷(CAS:1631-83-0)、二苯二氯硅烷(CAS:80-10-4)、三苯基乙烯基硅烷(CAS:18666-68-7)、二苯基二乙烯基硅烷(CAS:17937-68-7)、二苯基二甲氧基硅烷(CAS:6843-66-9)或三甲氧基苯基硅烷(CAS:2996-92-1)中的一种或几种。
本发明具体实施方式的等离子体聚合涂层,在一些具体实施方式中,所述R1、R2、R3和R4分别独立的选自于氢原子、卤素原子、C1-C4的烷烃基、C1-C4的烷烃氧基、C1-C4的烯烃基、C1-C4的烯烃氧基、C2-C10的环氧烃氧烃基或C2-C10的环氧烃基;其中R1、R2、R3和R4中的至少一个为C2-C10的环氧烃氧烃基或C2-C10的环氧烃基。作为举例,所述烷烃基例如可以是甲基、乙基、丙基、丁基或异丙基等,所述烷烃氧基例如可以是甲氧基、乙氧基、丙氧基、丁氧基或异丙氧基等,所述烯烃基可以是乙烯基、丙烯基或丁烯基等,所述烯烃氧基例如可以是2-(烯丙氧基),所述环氧烃氧烃基例如可以是(2,3-环氧丙氧)乙基、(2,3-环氧丙氧)丙基、(3,4-环氧丁氧)乙基或(3,4-环氧丁氧)丙基等,所述环氧烃基例如可以是2,3-环氧丙基、3,4-环氧乙基、3,4-环氧丁基或3,4-环氧环己基等。更具体的,具有式(1)所示结构的单体选自于3-(2,3-环氧丙氧)丙基甲基二甲氧基硅烷(CAS:65799-47-5)、3-(2,3-环氧丙氧)丙基三甲氧基硅烷(CAS:2530-83-8)、β-(3、4环氧环己基)-乙基三甲氧基硅烷(CAS:3388-04-3)或2-(3,4-环氧环己烷基)乙基三乙氧基硅烷(CAS:10217-34-2)中的一种或几种。在一些具体实施方式中,所述环氧为脂环族环氧,如3,4-环氧环己基,这样具有更好的耐磨性能提升作用。
本发明具体实施方式的等离子体聚合涂层,在一些具体实施方式中,所述反应性单体还包括氟代烃、氟代丙烯酸酯或氟代硅烷中的一种或几种含氟单体,在一些具体实施方式中,所述氟代丙烯酸酯的结构如式(2)所示,
其中,Z为连接部分,R5、R6和R7分别独立的选自于氢原子、卤素原子、C1-C10的烃基或C1-C10的卤原子取代烃基,x为1-20的整数。
本发明具体实施方式的等离子体聚合涂层,所述Z为连接部分,用于连接酯键和全氟碳烷基,在一些具体实施方式中,所述Z为连接键、C1-C4的亚烷基或具有取代基的C1-C4的亚烷基。所述亚烷基包括直链的亚烷基,例如亚甲基、亚乙基、亚丙基或亚丁基等,或含有支链的亚烷基,例如亚异丙基或亚异丁基等,所述取代基例如包括卤素原子、羟基、羧基或酯基等等。
本发明具体实施方式的等离子体聚合涂层,所述反应性单体同时包括结构如式(2)所示的氟代丙烯酸酯单体以及具有式(1)所示结构的单体时,特别是所述x为4以上,进一步为6以上,所述x具体例如6、7、8、9、10、11、12、13、14、15、16、17、18、19或20时,所述等离子聚合涂层经过反复摩擦后,依然能保持优异的防水防油性能。
本发明具体实施方式的等离子体聚合涂层,作为具体的非限制性举例,所述氟代丙烯酸酯选自于3-(全氟-5-甲基己基)-2-羟基丙基甲基丙烯酸酯(CAS:16083-81-1)、2-(全氟癸基)乙基甲基丙烯酸酯(CAS:2144-54-9)、2-(全氟己基)乙基甲基丙烯酸酯(CAS:2144-53-8)、2-(全氟十二烷基)乙基丙烯酸酯(CAS:34395-24-9)、2-全氟辛基丙烯酸乙酯(CAS:27905-45-9)、1H,1H,2H,2H-全氟辛醇丙烯酸酯(CAS:17527-29-6)、2-(全氟丁基)乙基丙烯酸酯(CAS:52591-27-2)或(全氟环己基)甲基丙烯酸酯(CAS:40677-94-9)中的一种或几种。
本发明具体实施方式的等离子体聚合涂层,在一些具体实施方式中,所述基材为金属,具体例如,铁、镁、铝、铜或其合金,在另外的一些具体实施方式中,所述基材为各种塑料、织物、玻璃、电气组件或光学仪器等。具体地,电气组件可以是印刷电路板(PCB)、电子产品或电子组装半成品等。当所述基材是电子产品时,举例但是并不限制于手机、平板电脑、键盘、电子阅读器、可穿戴设备、显示器等。所述基材也可以是电气组件的任一合适的电气部件,具体地,所述电气部件可以是电阻器、电容器、晶体管、二极管、放大器、继电器、变压器、电池、熔断器、集成电路、开关、LED、LED显示器、压电元件、光电子部件或天线或振荡器等。
本发明具体实施方式的等离子体聚合涂层,在一些具体实施方式中,所述基材为玻璃屏,特别是手机屏,目前智能手机已经得到了普及,针对手机防水防指纹的问题,很多手机厂商会选择镀有防指纹膜的玻璃作为手机屏幕。目前主流的防指纹工艺有两种:一种是物理气相沉积工艺,另一种是湿法喷涂工艺,这两种工艺相对来说价格比较昂贵且实验条件比较苛刻,而对于一些廉价低端手机而言,屏幕上是没有防指纹工艺处理的,大大降低了手机使用过程中的防水防油性。本发明具体实施方式的等离子体聚合涂层,涂层制备更为容易,涂层均匀、厚度薄、应力小,对基材表面几乎没有损伤和基材性能几乎没有影响,同时具有优异的耐磨性能,特别适用作为手机等玻璃屏的防护涂层。
本发明具体实施方式的等离子体聚合涂层,在一些具体实施方式中,所述涂层由基材接触所述式(1)所示结构的单体和所述氟代丙烯酸酯的单体的等离子体沉积形成,在一些具体实施方式中,所述式(1)所示结构的单体与所述氟代丙烯酸酯的单体的摩尔比在3:10~10:3之间,具体例如可以是3:10、4:10、5:10、6:10、7:10、8:10、9:10、10:10、10:9、10:8、10:7、10:6、10:5、10:4或10:3等等。在另外一些具体实施方式中,也可以根据实际需要,所述涂层由基材接触所述式(1)所示结构的单体和其它单体的等离子体形成。
本发明的具体实施方式还提供一种任一以上所述等离子体聚合涂层的制备方法,包括:
提供基材,将基材置于等离子体反应器中;将所述单体汽化进入等离子体反应器,等离子体放电,在所述基材的表面等离子体聚合形成涂层。
本发明具体实施方式的所述等离子体聚合涂层的制备方法,所述方法提供了一种增加等离子体聚合涂层耐磨性的方法。
本发明具体实施方式的所述等离子体聚合涂层的制备方法,对于所述单体及基材如前所述。
本发明具体实施方式的所述等离子体聚合涂层的制备方法,对于某些基材,例如手机屏或线路板,为进一步增强等离子体涂层与基材的结合力,在一些具体实施方式中,在涂层前对所述基材为采用连续等离子体进行预处理,具体预处理方式例如,在惰性气体气氛下,采用等离子体放电功率为20~500W,放电方式为连续式,持续放电时间1~60min,或者采用热、氧或高能辐射等方式等等。
本发明具体实施方式的所述等离子体聚合涂层的制备方法,在一些具体实施方式中,所述等离子体为以连续波激发的等离子体,在另外一些具体实施方式中,所述等离子体是以脉冲方式激发的等离子体,单体流量为50~500μL/min,具体例如可以是100μL/min、200μL/min、300μL/min或400μL/min等等;腔体内的温度控制在20℃-80℃,具体例如可以是20℃、30℃、40℃、50℃、60℃、70℃或80℃等等;单体汽化温度为50℃-180℃,具体例如可以是50℃、60℃、70℃、80℃、90℃、100℃、110℃、120℃、130℃、140℃、150℃、160℃、170℃、180℃等等,且是在真空条件下发生汽化,所述脉冲等离子体通过施加脉冲电压放电产生,其中,脉冲功率为10W~300W,具体例如可以是10W、20W、30W、50W、70W、80W、100W、120W、140W、160W、180W、190W、200W、210W、220W、230W、240W、250W、260W、270W、280W、290W或300W等等;脉冲占空比为0.1%~85%,具体例如可以是0.1%、0.5%、1%、5%、10%、15%、20%、25%、30%、35%、40%、45%、50%、55%、60%、65%、70%、75%、80%或85%等等;等离子放电时间为100s-36000s,具体例如可以是100s、500s、1000s、1800s、2000s、1000s、2000s、3000s、4000s、5000s、6000s、7000s、7200s、10800s、14400s、18000s、21600s、25200s、28800s、32400s或36000s等等。
本发明具体实施方式的所述等离子体聚合涂层的制备方法,在一些具体实施方式中,所述等离子放电方式可以现有的各种放电方式,具体例如,无电极放电(如射频电感耦合放电、微波放电)、单电极放电(如电晕放电、单极放电所形成的等离子体射流)、双电极放电(如介质阻挡放电、裸露电极射频辉光放电)以及多电极放电(如采用浮动电极作为第三个电极的放电)。
本发明的具体实施方式还提供一种器件,所述器件的至少部分表面具有任一以上所述的等离子体聚合涂层,在一些具体实施方式中,所述器件的部分表面或全部表面沉积有上述的等离子体聚合涂层。
以下通过具体实施例对本发明做进一步说明。
实施例
实施例1
方案一:
将手机屏放置于等离子体腔室内,对腔体进行连续抽真空至5毫托,通入氦气,流量为40sccm,开启等离子体放电,脉冲功率180W,占空比1.5%;将单体β-(3、4环氧环己基)-乙基三甲氧基硅烷和单体2-全氟辛基丙烯酸乙酯,在汽化温度为180℃下进行汽化后导入腔体内进行等离子体化学气相沉积,其中单体β-(3、4环氧环己基)-乙基三甲氧基硅烷流量为75μL/min,单体2-全氟辛基丙烯酸乙酯流量为75μL/min;反应时间5400s;放电结束后通入压缩空气,使腔体恢复常压,打开腔体,取出手机屏。
方案二:
将另一块手机屏放置于等离子体腔室内,对腔体进行连续抽真空至5毫托,通入氦气,流量为40sccm,开启等离子体放电,脉冲功率180W,占空比1.5%;将单体2-全氟辛基丙烯酸乙酯,在汽化温度为180℃下进行汽化后导入腔体内进行等离子体化学气相沉积,其中单体2-全氟辛基丙烯酸乙酯流量为150μL/min;反应时间5400s;放电结束后通入压缩空气,使腔体恢复常压,打开腔体,取出手机屏。
方案三
将手机屏放置于等离子体腔室内,对腔体进行连续抽真空至5毫托,通入氦气,流量为40sccm,开启等离子体放电,脉冲功率180W,占空比1.5%;将单体3-(2,3-环氧丙氧)丙基三甲氧基硅烷和单体2-全氟辛基丙烯酸乙酯,在汽化温度为180℃下进行汽化后导入腔体内进行等离子体化学气相沉积,其中单体3-(2,3-环氧丙氧)丙基三甲氧基硅烷流量为75μL/min,单体2-全氟辛基丙烯酸乙酯流量为75μL/min;反应时间5400s;放电结束后通入压缩空气,使腔体恢复常压,打开腔体,取出手机屏。
方案四
将手机屏放置于等离子体腔室内,对腔体进行连续抽真空至5毫托,通入氦气,流量为40sccm,开启等离子体放电,脉冲功率180W,占空比1.5%;将单体四甲氧基硅烷和单体2-全氟辛基丙烯酸乙酯,在汽化温度为180℃下进行汽化后导入腔体内进行等离子体化学气相沉积,其中单体四甲氧基硅烷流量为75μL/min,单体2-全氟辛基丙烯酸乙酯流量为75μL/min;反应时间5400s;放电结束后通入压缩空气,使腔体恢复常压,打开腔体,取出手机屏。
对方案一、方案二、方案三和方案四的手机屏进行耐磨性测试,在耐磨试验机上进行,摩擦材料为无尘布,载荷100g,转速50r/min。每摩擦100次记录一次水滴角和正十六烷油滴角。
测试结果如下:
由上表结果可知,方案一中,包含带有脂肪环环氧基的有机硅单体β-(3、4环氧环己基)-乙基三甲氧基硅烷的等离子体聚合涂层具有最好的耐磨性能,摩擦1000次后水滴角保持为108°,正十六烷油滴角保持为72°。方案三中,包含带有链烃基环氧基的有机硅单体3-(2,3-环氧丙氧)丙基三甲氧基硅烷的等离子体聚合涂层具有良好的耐磨性能,摩擦1000次后水滴角保持为102°,正十六烷油滴角保持为65°,但效果略差于方案一。方案二和方案四中,不含有机硅单体或包含非环氧有机硅单体四甲氧基硅烷,其等离子体聚合涂层的耐磨性能较差,摩擦1000次后水滴角分别保持仅为60°和67°,正十六烷油滴角保持仅为52°和56°。
实施例2
方案一:
将手机屏放置于等离子体腔室内,对腔体进行连续抽真空至5毫托,通入氦气,流量为40sccm,开启等离子体放电,脉冲功率180W,占空比1%;将单体苯基三甲氧基硅烷和单体1H,1H,2H,2H-全氟辛醇丙烯酸酯,在汽化温度为145℃下进行汽化后导入腔体内进行等离子体化学气相沉积,其中单体苯基三甲氧基硅烷流量为80μL/min,单体1H,1H,2H,2H-全氟辛醇丙烯酸酯流量为80μL/min;反应时间6000s;放电结束后通入压缩空气,使腔体恢复常压,打开腔体,取出手机屏。
方案二:
将另一块手机屏放置于等离子体腔室内,对腔体进行连续抽真空至5毫托,通入氦气,流量为40sccm,开启等离子体放电,脉冲功率180W,占空比1%;将单体1H,1H,2H,2H-全氟辛醇丙烯酸酯,在汽化温度为145℃下进行汽化后导入腔体内进行等离子体化学气相沉积,其中单体1H,1H,2H,2H-全氟辛醇丙烯酸酯流量为160μL/min;反应时间6000s;放电结束后通入压缩空气,使腔体恢复常压,打开腔体,取出手机屏。
方案三
将手机屏放置于等离子体腔室内,对腔体进行连续抽真空至5毫托,通入氦气,流量为40sccm,开启等离子体放电,脉冲功率180W,占空比1%;将单体四甲氧基硅烷和单体1H,1H,2H,2H-全氟辛醇丙烯酸酯,在汽化温度为145℃下进行汽化后导入腔体内进行等离子体化学气相沉积,其中单体四甲氧基硅烷流量为80μL/min,单体1H,1H,2H,2H-全氟辛醇丙烯酸酯流量为80μL/min;反应时间6000s;放电结束后通入压缩空气,使腔体恢复常压,打开腔体,取出手机屏。
对方案一、方案二和方案三的手机屏进行耐磨性测试,在耐磨试验机上进行,摩擦材料为无尘布,载荷500g,转速50r/min。每摩擦50次记录一次水滴角和正十六烷油滴角。
测试结果如下:
由上表结果可知,方案一中,包含芳基的有机硅单体苯基三甲氧基硅烷的等离子体聚合涂层具有良好的耐磨性能,摩擦500次后水滴角保持为100°,正十六烷油滴角保持为68°。方案二和方案三中,不含有机硅单体或包含不带芳基的有机硅单体四甲氧基硅烷,其等离子体聚合涂层的耐磨性能较差,其中,不含有机硅单体的等离子体聚合涂层摩擦500次直接已经被磨损,包含不带芳基的有机硅单体四甲氧基硅烷的等离子体聚合涂层摩擦500次后水滴角保持仅55°,正十六烷油滴角保持仅为36°。
实施例3
方案一:
将手机屏放置于等离子体腔室内,对腔体进行连续抽真空至5毫托,通入氦气,流量为40sccm,开启等离子体放电,脉冲功率200W,占空比1.5%;将单体二苯基二甲氧基硅烷和单体2-全氟辛基丙烯酸乙酯,在汽化温度为180℃下进行汽化后导入腔体内进行等离子体化学气相沉积,其中单体二苯基二甲氧基硅烷流量为75μL/min,单体2-全氟辛基丙烯酸乙酯流量为75μL/min;反应时间1800s;放电结束后通入压缩空气,使腔体恢复常压,打开腔体,取出手机屏。
方案二:
将另一块手机屏放置于等离子体腔室内,对腔体进行连续抽真空至5毫托,通入氦气,流量为40sccm,开启等离子体放电,脉冲功率200W,占空比1.5%;将单体2-全氟辛基丙烯酸乙酯,在汽化温度为180℃下进行汽化后导入腔体内进行等离子体化学气相沉积,其中单体2-全氟辛基丙烯酸乙酯流量为150μL/min;反应时间1800s;放电结束后通入压缩空气,使腔体恢复常压,打开腔体,取出手机屏。
对方案一和方案二的手机屏进行耐磨性测试,在耐磨试验机上进行,摩擦材料为无尘布,载荷100g,转速50r/min。每摩擦10次记录一次水滴角和正十六烷油滴角。
测试结果如下:
由上表结果可知,方案一中,包含芳基的有机硅单体二苯基二甲氧基硅烷的等离子体聚合涂层具有良好的耐磨性能,摩擦100次后水滴角保持为102°,正十六烷油滴角保持为69°。方案二中,不含有机硅单体的等离子体聚合涂层摩擦100次直接已经被磨损。
实施例4
方案一:
将手机屏放置于等离子体腔室内,对腔体进行连续抽真空至5毫托,通入氦气,流量为40sccm,开启等离子体放电,脉冲功率180W,占空比1.5%;将单体β-(3、4环氧环己基)-乙基三甲氧基硅烷、苯基三甲氧基硅烷和单体1H,1H,2H,2H-全氟辛醇丙烯酸酯,在汽化温度为180℃下进行汽化后导入腔体内进行等离子体化学气相沉积,其中单体β-(3、4环氧环己基)-乙基三甲氧基硅烷流量为45μL/min,单体苯基三甲氧基硅烷流量为45μL/min,单体1H,1H,2H,2H-全氟辛醇丙烯酸酯流量为60μL/min;反应时间5000s;放电结束后通入压缩空气,使腔体恢复常压,打开腔体,取出手机屏。
方案二:
将另一块手机屏放置于等离子体腔室内,对腔体进行连续抽真空至5毫托,通入氦气,流量为40sccm,开启等离子体放电,脉冲功率180W,占空比1.5%;将单体1H,1H,2H,2H-全氟辛醇丙烯酸酯,在汽化温度为180℃下进行汽化后导入腔体内进行等离子体化学气相沉积,其中单体1H,1H,2H,2H-全氟辛醇丙烯酸酯流量为150μL/min;反应时间5000s;放电结束后通入压缩空气,使腔体恢复常压,打开腔体,取出手机屏。
对方案一和方案二的手机屏进行耐磨性测试,在耐磨试验机上进行,摩擦材料为无尘布,载荷100g,转速50r/min。每摩擦100次记录一次水滴角和正十六烷油滴角。
测试结果如下:
由上表结果可知,方案一中,包含带有脂肪环环氧基的有机硅单体β-(3、4环氧环己基)-乙基三甲氧基硅烷以及带有苯基的有机硅单体苯基三甲氧基硅烷的等离子体聚合涂层具有良好的耐磨性能,摩擦2000次后水滴角保持为105°,正十六烷油滴角保持为69°。方案二中,不含有机硅单体的等离子体聚合涂层摩擦2000次直接已经被磨损。
实施例5
方案一:
将Fe片(30*20*2mm)放置于等离子体腔室内,对腔体进行连续抽真空至5毫托,通入氦气,流量为40sccm,开启等离子体放电,脉冲功率180W,占空比3%;将单体β-(3、4环氧环己基)-乙基三甲氧基硅烷和单体2-全氟辛基丙烯酸乙酯,在汽化温度为180℃下进行汽化后导入腔体内进行等离子体化学气相沉积,其中单体β-(3、4环氧环己基)-乙基三甲氧基硅烷流量为100μL/min,单体2-全氟辛基丙烯酸乙酯流量为100μL/min;反应时间3600s;放电结束后通入压缩空气,使腔体恢复常压,打开腔体,取出Fe片。
方案二:
将另一块Fe片(30*20*2mm)放置于等离子体腔室内,对腔体进行连续抽真空至5毫托,通入氦气,流量为40sccm,开启等离子体放电,脉冲功率180W,占空比3%;将单体2-全氟辛基丙烯酸乙酯,在汽化温度为180℃下进行汽化后导入腔体内进行等离子体化学气相沉积,其中单体2-全氟辛基丙烯酸乙酯流量为200μL/min;反应时间3600s;放电结束后通入压缩空气,使腔体恢复常压,打开腔体,取出Fe片。
对方案一和方案二的Fe片进行耐磨性测试,在耐磨试验机上进行,摩擦材料为无尘布,载荷100g,转速50r/min。每摩擦100次记录一次水滴角和正十六烷油滴角。
测试结果如下:
虽然本发明披露如上,但本发明并非限定于此。任何本领域技术人员,在不脱离本发明的精神和范围内,均可作各种更动与修改,因此本发明的保护范围应当以权利要求所限定的范围为准。
Claims (19)
2.根据权利要求1所述的等离子体聚合涂层,其特征在于,所述R1、R2、R3和R4分别独立的选自于氢原子、卤素原子、C1-C20的烃基、C1-C20的带有环氧结构取代基的烃基、C1-C20的烃氧基、C1-C20的带有环氧结构取代基的烃氧基或C6-C20的芳基。
3.根据权利要求2所述的等离子体聚合涂层,其特征在于,所述R1、R2、R3和R4分别独立的选自于氢原子、卤素原子、C1-C4的烷烃基、C1-C4的烷烃氧基、C1-C4的烯烃基、C1-C4的烯烃氧基或C6-C20的芳基;其中R1、R2、R3和R4中的至少一个为C6-C20的芳基。
4.根据权利要求3所述的等离子体聚合涂层,其特征在于,所述芳基为苯基。
5.根据权利要求4所述的等离子体聚合涂层,其特征在于,具有式(1)所示结构的单体选自于苯基三氯硅烷、氯二苯基硅烷、二苯二氯硅烷、三苯基乙烯基硅烷、二苯基二乙烯基硅烷、二苯基二甲氧基硅烷或三甲氧基苯基硅烷中的一种或几种。
6.根据权利要求2所述的等离子体聚合涂层,其特征在于,所述R1、R2、R3和R4分别独立的选自于氢原子、卤素原子、C1-C4的烷烃基、C1-C4的烷烃氧基、C1-C4的烯烃基、C1-C4的烯烃氧基、C2-C10的环氧烃氧烃基或C2-C10的环氧烃基;其中R1、R2、R3和R4中的至少一个为C2-C10的环氧烃氧烃基或C2-C10的环氧烃基。
7.根据权利要求6所述的等离子体聚合涂层,其特征在于,所述环氧为脂环族环氧。
8.根据权利要求6所述的等离子体聚合涂层,其特征在于,具有式(1)所示结构的单体选自于3-(2,3-环氧丙氧)丙基甲基二甲氧基硅烷、3-(2,3-环氧丙氧)丙基三甲氧基硅烷、β-(3、4环氧环己基)-乙基三甲氧基硅烷或2-(3,4-环氧环己烷基)乙基三乙氧基硅烷中的一种或几种。
9.根据权利要求1所述的等离子体聚合涂层,其特征在于,所述反应性单体还包括氟代烃、氟代丙烯酸酯或氟代硅烷中的一种或几种。
11.根据权利要求10所述的等离子体聚合涂层,其特征在于,所述Z为连接键、C1-C4的亚烷基或具有取代基的C1-C4的亚烷基,x在4以上。
12.根据权利要求11所述的等离子体聚合涂层,其特征在于,所述R5、R6和R7分别独立的选自于氢原子或甲基。
13.根据权利要求12所述的等离子体聚合涂层,其特征在于,所述氟代丙烯酸酯选自于3-(全氟-5-甲基己基)-2-羟基丙基甲基丙烯酸酯、2-(全氟癸基)乙基甲基丙烯酸酯、2-(全氟己基)乙基甲基丙烯酸酯、2-(全氟十二烷基)乙基丙烯酸酯、2-全氟辛基丙烯酸乙酯、1H,1H,2H,2H-全氟辛醇丙烯酸酯、2-(全氟丁基)乙基丙烯酸酯或(全氟环己基)甲基丙烯酸酯中的一种或几种。
14.根据权利要求1所述的等离子体聚合涂层,其特征在于,所述基材为金属、塑料、织物、玻璃、电气组件、光学仪器或电气部件。
15.根据权利要求14所述的等离子体聚合涂层,其特征在于,所述基材为玻璃屏。
16.一种权利要求1-15任意一项所述的等离子体聚合涂层的制备方法,其特征在于,包括:
提供基材,将基材置于等离子体反应器中;将所述反应性单体汽化进入等离子体反应器,等离子体放电,在所述基材的表面等离子体聚合形成涂层。
17.根据权利要求16所述的制备方法,其特征在于,所述等离子体为脉冲等离子体。
18.根据权利要求17所述的制备方法,其特征在于,所述脉冲等离子体通过施加脉冲电压放电产生,其中,脉冲功率为10W~300W,脉冲占空比为0.1%~85%,等离子放电时间为100s~36000s。
19.一种器件,其特征在于,所述器件的至少部分表面具有权利要求1-15任意一项所述的等离子体聚合涂层。
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