JP2002256434A5 - - Google Patents

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Publication number
JP2002256434A5
JP2002256434A5 JP2002008476A JP2002008476A JP2002256434A5 JP 2002256434 A5 JP2002256434 A5 JP 2002256434A5 JP 2002008476 A JP2002008476 A JP 2002008476A JP 2002008476 A JP2002008476 A JP 2002008476A JP 2002256434 A5 JP2002256434 A5 JP 2002256434A5
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JP
Japan
Prior art keywords
vapor deposition
chemical vapor
group
deposition conditions
interlayer insulating
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JP2002008476A
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English (en)
Japanese (ja)
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JP3762304B2 (ja
JP2002256434A (ja
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Priority claimed from US09/944,042 external-priority patent/US6583048B2/en
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Publication of JP2002256434A publication Critical patent/JP2002256434A/ja
Publication of JP2002256434A5 publication Critical patent/JP2002256434A5/ja
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Publication of JP3762304B2 publication Critical patent/JP3762304B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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JP2002008476A 2001-01-17 2002-01-17 低誘電率層間絶縁膜の形成方法 Expired - Lifetime JP3762304B2 (ja)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US76126901A 2001-01-17 2001-01-17
US09/761269 2001-01-17
US09/944042 2001-08-31
US09/944,042 US6583048B2 (en) 2001-01-17 2001-08-31 Organosilicon precursors for interlayer dielectric films with low dielectric constants

Publications (3)

Publication Number Publication Date
JP2002256434A JP2002256434A (ja) 2002-09-11
JP2002256434A5 true JP2002256434A5 (enExample) 2004-08-05
JP3762304B2 JP3762304B2 (ja) 2006-04-05

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Family Applications (1)

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JP2002008476A Expired - Lifetime JP3762304B2 (ja) 2001-01-17 2002-01-17 低誘電率層間絶縁膜の形成方法

Country Status (8)

Country Link
EP (1) EP1225194B2 (enExample)
JP (1) JP3762304B2 (enExample)
KR (1) KR100447684B1 (enExample)
CN (2) CN100410420C (enExample)
DE (1) DE02001014T1 (enExample)
IL (1) IL147609A (enExample)
SG (1) SG98468A1 (enExample)
TW (1) TWI235428B (enExample)

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CN110129769B (zh) * 2019-05-17 2021-05-14 江苏菲沃泰纳米科技股份有限公司 疏水性的低介电常数膜及其制备方法
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KR102997033B1 (ko) 2019-09-13 2026-07-28 버슘머트리얼즈 유에스, 엘엘씨 모노알콕시실란 및 디알콕시실란과 이로부터 제조된 고밀도 오가노실리카 필름
US20230103933A1 (en) * 2020-03-31 2023-04-06 Versum Materials Us, Llc New precursors for depositing films with elastic modulus
KR20230072493A (ko) * 2020-09-22 2023-05-24 버슘머트리얼즈 유에스, 엘엘씨 유전체 필름의 특성을 향상시키는 첨가제
KR20240009497A (ko) * 2021-05-19 2024-01-22 버슘머트리얼즈 유에스, 엘엘씨 높은 탄성 계수를 갖는 필름의 증착을 위한 신규한 전구체
CN115400930A (zh) * 2021-05-26 2022-11-29 江苏菲沃泰纳米科技股份有限公司 一种等离子体聚合涂层、制备方法及器件
KR102901182B1 (ko) * 2021-07-20 2025-12-16 에이에스엠 아이피 홀딩 비.브이. 실리콘 카바이드 층을 포함한 구조체를 형성하는 방법
WO2023064773A1 (en) * 2021-10-13 2023-04-20 Versum Materials Us, Llc Alkoxysilanes and dense organosilica films made therefrom
KR102771898B1 (ko) * 2021-12-09 2025-02-21 에스케이트리켐 주식회사 저 유전율 실리콘 함유 박막 형성용 전구체, 이를 이용한 저 유전율 실리콘 함유 박막 형성 방법 및 상기 저 유전율 실리콘 함유 박막을 포함하는 반도체 소자.
KR102913505B1 (ko) * 2023-06-08 2026-01-16 에스케이트리켐 주식회사 저 유전율 실리콘 함유 박막 형성용 전구체 및 이를 이용한 저 유전율 실리콘 함유 박막 형성 방법.
KR20250016873A (ko) * 2023-07-26 2025-02-04 에스케이트리켐 주식회사 저 유전율 박막 형성용 전구체 및 상기 전구체를 이용한 저 유전율 실리콘 함유 박막 형성 방법
CN121087464B (zh) * 2025-11-11 2026-01-23 研微(江苏)半导体科技有限公司 制备低介电常数薄膜的方法和半导体结构

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