KR100447684B1 - 유전 상수가 낮은 층간 유전 필름용 유기규소 전구물질 - Google Patents

유전 상수가 낮은 층간 유전 필름용 유기규소 전구물질 Download PDF

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Publication number
KR100447684B1
KR100447684B1 KR10-2002-0002683A KR20020002683A KR100447684B1 KR 100447684 B1 KR100447684 B1 KR 100447684B1 KR 20020002683 A KR20020002683 A KR 20020002683A KR 100447684 B1 KR100447684 B1 KR 100447684B1
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South Korea
Prior art keywords
film
vapor deposition
chemical vapor
deposition conditions
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Expired - Lifetime
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KR10-2002-0002683A
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English (en)
Korean (ko)
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KR20020062192A (ko
Inventor
빈센트진루이스
오닐마크레오나드
위더스호워드폴주니어
벡스콧에드워드
비르티스레이몬드니콜라스
Original Assignee
에어 프로덕츠 앤드 케미칼스, 인코오포레이티드
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Priority claimed from US09/944,042 external-priority patent/US6583048B2/en
Application filed by 에어 프로덕츠 앤드 케미칼스, 인코오포레이티드 filed Critical 에어 프로덕츠 앤드 케미칼스, 인코오포레이티드
Publication of KR20020062192A publication Critical patent/KR20020062192A/ko
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Publication of KR100447684B1 publication Critical patent/KR100447684B1/ko
Assigned to 버슘머트리얼즈 유에스, 엘엘씨 reassignment 버슘머트리얼즈 유에스, 엘엘씨 권리의 전부이전등록 Assignors: 에어 프로덕츠 앤드 케미칼스, 인코오포레이티드
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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D183/00—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers
    • C09D183/04—Polysiloxanes
    • C09D183/06—Polysiloxanes containing silicon bound to oxygen-containing groups
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D1/00—Processes for applying liquids or other fluent materials
    • B05D1/60—Deposition of organic layers from vapour phase
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/401—Oxides containing silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H10P14/6336—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
    • H10P14/668—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials
    • H10P14/6681—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si
    • H10P14/6682—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si the compound being a silane, e.g. disilane, methylsilane or chlorosilane
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
    • H10P14/668—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials
    • H10P14/6681—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si
    • H10P14/6684—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si the compound comprising silicon and oxygen
    • H10P14/6686—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si the compound comprising silicon and oxygen the compound being a molecule comprising at least one silicon-oxygen bond and the compound having hydrogen or an organic group attached to the silicon or oxygen, e.g. a siloxane
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/6922—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/6922—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • H10P14/6924—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC the material being halogen doped silicon oxides, e.g. FSG

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Wood Science & Technology (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Formation Of Insulating Films (AREA)
  • Chemical Vapour Deposition (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
KR10-2002-0002683A 2001-01-17 2002-01-17 유전 상수가 낮은 층간 유전 필름용 유기규소 전구물질 Expired - Lifetime KR100447684B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US76126901A 2001-01-17 2001-01-17
US09/761269 2001-01-17
US09/944042 2001-08-31
US09/944,042 US6583048B2 (en) 2001-01-17 2001-08-31 Organosilicon precursors for interlayer dielectric films with low dielectric constants

Publications (2)

Publication Number Publication Date
KR20020062192A KR20020062192A (ko) 2002-07-25
KR100447684B1 true KR100447684B1 (ko) 2004-09-08

Family

ID=27116954

Family Applications (1)

Application Number Title Priority Date Filing Date
KR10-2002-0002683A Expired - Lifetime KR100447684B1 (ko) 2001-01-17 2002-01-17 유전 상수가 낮은 층간 유전 필름용 유기규소 전구물질

Country Status (8)

Country Link
EP (1) EP1225194B2 (enExample)
JP (1) JP3762304B2 (enExample)
KR (1) KR100447684B1 (enExample)
CN (2) CN100410420C (enExample)
DE (1) DE02001014T1 (enExample)
IL (1) IL147609A (enExample)
SG (1) SG98468A1 (enExample)
TW (1) TWI235428B (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20200290095A1 (en) * 2018-03-20 2020-09-17 Taiwan Semiconductor Manufacturing Co., Ltd. Method of forming process film
WO2023106623A1 (ko) * 2021-12-09 2023-06-15 에스케이트리켐 주식회사 저 유전율 실리콘 함유 박막 형성용 전구체, 이를 이용한 저 유전율 실리콘 함유 박막 형성 방법 및 상기 저 유전율 실리콘 함유 박막을 포함하는 반도체 소자.
US12655524B2 (en) 2019-09-13 2026-06-16 Versum Materials Us, Llc Monoalkoxysilanes and dialkoxysilanes and dense organosilica films made therefrom

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US6784123B2 (en) 1998-02-05 2004-08-31 Asm Japan K.K. Insulation film on semiconductor substrate and method for forming same
US7582575B2 (en) 1998-02-05 2009-09-01 Asm Japan K.K. Method for forming insulation film
US7354873B2 (en) 1998-02-05 2008-04-08 Asm Japan K.K. Method for forming insulation film
WO2003038143A1 (en) * 2001-10-30 2003-05-08 Massachusetts Institute Of Technology Fluorocarbon-organosilicon copolymers and coatings prepared by hot-filament chemical vapor deposition
KR101227664B1 (ko) 2002-01-31 2013-01-29 도소 가부시키가이샤 유기실란화합물을 포함하여 구성되는 절연막용 재료, 그 제조방법 및 반도체장치
US6818570B2 (en) 2002-03-04 2004-11-16 Asm Japan K.K. Method of forming silicon-containing insulation film having low dielectric constant and high mechanical strength
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JP4882893B2 (ja) * 2002-10-30 2012-02-22 富士通セミコンダクター株式会社 半導体装置の製造方法
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JP6993394B2 (ja) * 2019-08-06 2022-02-21 バーサム マテリアルズ ユーエス，リミティド ライアビリティ カンパニー ケイ素化合物及びケイ素化合物を使用してフィルムを堆積する方法
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KR20240009497A (ko) * 2021-05-19 2024-01-22 버슘머트리얼즈 유에스, 엘엘씨 높은 탄성 계수를 갖는 필름의 증착을 위한 신규한 전구체
CN115400930A (zh) * 2021-05-26 2022-11-29 江苏菲沃泰纳米科技股份有限公司 一种等离子体聚合涂层、制备方法及器件
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WO2023064773A1 (en) * 2021-10-13 2023-04-20 Versum Materials Us, Llc Alkoxysilanes and dense organosilica films made therefrom
KR102913505B1 (ko) * 2023-06-08 2026-01-16 에스케이트리켐 주식회사 저 유전율 실리콘 함유 박막 형성용 전구체 및 이를 이용한 저 유전율 실리콘 함유 박막 형성 방법.
KR20250016873A (ko) * 2023-07-26 2025-02-04 에스케이트리켐 주식회사 저 유전율 박막 형성용 전구체 및 상기 전구체를 이용한 저 유전율 실리콘 함유 박막 형성 방법
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JP2002256434A (ja) 2002-09-11
CN1367205A (zh) 2002-09-04
EP1225194B1 (en) 2008-10-01
TWI235428B (en) 2005-07-01
CN100410420C (zh) 2008-08-13
CN1240780C (zh) 2006-02-08
KR20020062192A (ko) 2002-07-25
EP1225194B2 (en) 2013-09-18
EP1225194A3 (en) 2002-09-18
EP1225194A2 (en) 2002-07-24
DE02001014T1 (de) 2007-09-20

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