JP3662774B2 - ポジ型レジスト組成物 - Google Patents

ポジ型レジスト組成物 Download PDF

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Publication number
JP3662774B2
JP3662774B2 JP15490899A JP15490899A JP3662774B2 JP 3662774 B2 JP3662774 B2 JP 3662774B2 JP 15490899 A JP15490899 A JP 15490899A JP 15490899 A JP15490899 A JP 15490899A JP 3662774 B2 JP3662774 B2 JP 3662774B2
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JP
Japan
Prior art keywords
mol
component
unit
positive resist
units
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP15490899A
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English (en)
Japanese (ja)
Other versions
JP2000347405A (ja
Inventor
克実 大森
博人 湯川
晃義 山崎
和夫 谷
洋平 木下
知孝 山田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Ohka Kogyo Co Ltd
Original Assignee
Tokyo Ohka Kogyo Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Ohka Kogyo Co Ltd filed Critical Tokyo Ohka Kogyo Co Ltd
Priority to JP15490899A priority Critical patent/JP3662774B2/ja
Priority to TW089110508A priority patent/TWI253542B/zh
Priority to US09/585,616 priority patent/US6340553B1/en
Priority to KR10-2000-0030294A priority patent/KR100510021B1/ko
Publication of JP2000347405A publication Critical patent/JP2000347405A/ja
Priority to US09/950,589 priority patent/US6485887B2/en
Priority to KR10-2004-0057501A priority patent/KR100476323B1/ko
Application granted granted Critical
Publication of JP3662774B2 publication Critical patent/JP3662774B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/106—Binder containing

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  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Materials For Photolithography (AREA)
JP15490899A 1999-06-02 1999-06-02 ポジ型レジスト組成物 Expired - Fee Related JP3662774B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP15490899A JP3662774B2 (ja) 1999-06-02 1999-06-02 ポジ型レジスト組成物
TW089110508A TWI253542B (en) 1999-06-02 2000-05-30 Positive-working photoresist composition
US09/585,616 US6340553B1 (en) 1999-06-02 2000-06-02 Positive-working photoresist composition
KR10-2000-0030294A KR100510021B1 (ko) 1999-06-02 2000-06-02 포지티브형 포토레지스트 조성물
US09/950,589 US6485887B2 (en) 1999-06-02 2001-09-13 Positive-working photoresist composition
KR10-2004-0057501A KR100476323B1 (ko) 1999-06-02 2004-07-23 포지티브형의 화학증폭형 포토레지스트 조성물

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15490899A JP3662774B2 (ja) 1999-06-02 1999-06-02 ポジ型レジスト組成物

Publications (2)

Publication Number Publication Date
JP2000347405A JP2000347405A (ja) 2000-12-15
JP3662774B2 true JP3662774B2 (ja) 2005-06-22

Family

ID=15594600

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15490899A Expired - Fee Related JP3662774B2 (ja) 1999-06-02 1999-06-02 ポジ型レジスト組成物

Country Status (4)

Country Link
US (2) US6340553B1 (ko)
JP (1) JP3662774B2 (ko)
KR (2) KR100510021B1 (ko)
TW (1) TWI253542B (ko)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100842237B1 (ko) * 2001-03-28 2008-06-30 스미또모 가가꾸 가부시키가이샤 화학 증폭형 포지티브 레지스트 조성물

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3761322B2 (ja) * 1998-04-23 2006-03-29 東京応化工業株式会社 化学増幅型ポジ型ホトレジスト
JP3638086B2 (ja) * 1998-08-21 2005-04-13 東京応化工業株式会社 ポジ型レジスト組成物及びそれを用いたレジストパターン形成方法
US6492086B1 (en) * 1999-10-08 2002-12-10 Shipley Company, L.L.C. Phenolic/alicyclic copolymers and photoresists
JP2002030116A (ja) * 2000-07-14 2002-01-31 Tokyo Ohka Kogyo Co Ltd 新規コポリマー、ホトレジスト組成物、および高アスペクト比のレジストパターン形成方法
EP1182506B1 (en) 2000-08-21 2010-10-27 Tokyo Ohka Kogyo Co., Ltd. Crosslinked positive-working photoresist composition
JP4694686B2 (ja) * 2000-08-31 2011-06-08 東京応化工業株式会社 半導体素子製造方法
JP2002091003A (ja) * 2000-09-19 2002-03-27 Tokyo Ohka Kogyo Co Ltd 薄膜形成用ポジ型レジスト組成物及びそれを用いた感光材料
JP4441104B2 (ja) * 2000-11-27 2010-03-31 東京応化工業株式会社 ポジ型レジスト組成物
WO2002069042A1 (en) * 2001-02-21 2002-09-06 Arch Specialty Chemicals, Inc. Wet etch compatible deep uv photoresist compositions
TW584786B (en) * 2001-06-25 2004-04-21 Shinetsu Chemical Co Polymers, resist compositions and patterning process
US7192681B2 (en) 2001-07-05 2007-03-20 Fuji Photo Film Co., Ltd. Positive photosensitive composition
US6703169B2 (en) * 2001-07-23 2004-03-09 Applied Materials, Inc. Method of preparing optically imaged high performance photomasks
JP4123920B2 (ja) 2001-12-20 2008-07-23 Ｊｓｒ株式会社 共重合体、重合体混合物および感放射線性樹脂組成物
JP2004219989A (ja) * 2002-12-25 2004-08-05 Tokyo Ohka Kogyo Co Ltd ポジ型レジスト組成物及びそれを用いたレジストパターンの形成方法
JP4493938B2 (ja) * 2003-06-06 2010-06-30 東京応化工業株式会社 ポジ型レジスト組成物及びレジストパターン形成方法
US7951522B2 (en) 2004-12-29 2011-05-31 Tokyo Ohka Kogyo Co., Ltd. Chemically amplified positive photoresist composition for thick film, thick-film photoresist laminated product, manufacturing method for thick-film resist pattern, and manufacturing method for connection terminal
US7927778B2 (en) 2004-12-29 2011-04-19 Tokyo Ohka Kogyo Co., Ltd. Chemically amplified positive photoresist composition for thick film, thick-film photoresist laminated product, manufacturing method for thick-film resist pattern, and manufacturing method for connection terminal
TWI432408B (zh) * 2007-01-09 2014-04-01 Jsr Corp 化合物及敏輻射線性組成物
JP2009251538A (ja) * 2008-04-11 2009-10-29 Nippon Zeon Co Ltd 感放射線樹脂組成物
KR100972864B1 (ko) * 2008-05-21 2010-07-28 주식회사 하이닉스반도체 반도체 메모리 소자 및 반도체 메모리 소자의 캐패시터형성방법
TWI556958B (zh) * 2010-09-14 2016-11-11 東京應化工業股份有限公司 基質劑及含嵌段共聚物之層的圖型形成方法
KR102649466B1 (ko) 2017-09-13 2024-03-20 후지필름 가부시키가이샤 감활성광선성 또는 감방사선성 수지 조성물, 레지스트막, 패턴 형성 방법, 및 전자 디바이스의 제조 방법

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3116751B2 (ja) 1993-12-03 2000-12-11 ジェイエスアール株式会社 感放射線性樹脂組成物
JP3072316B2 (ja) 1994-09-30 2000-07-31 日本ゼオン株式会社 レジスト組成物
JP3751065B2 (ja) 1995-06-28 2006-03-01 富士通株式会社 レジスト材料及びレジストパターンの形成方法
JP3380128B2 (ja) 1996-11-29 2003-02-24 富士通株式会社 レジスト材料及びレジストパターンの形成方法
US5861231A (en) 1996-06-11 1999-01-19 Shipley Company, L.L.C. Copolymers and photoresist compositions comprising copolymer resin binder component
KR100524446B1 (ko) * 1998-03-30 2005-10-26 후지 샤신 필름 가부시기가이샤 포지티브형 포토레지스트 조성물
KR100504644B1 (ko) * 1998-10-29 2005-08-04 신에쓰 가가꾸 고교 가부시끼가이샤 포지형 레지스트 재료

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100842237B1 (ko) * 2001-03-28 2008-06-30 스미또모 가가꾸 가부시키가이샤 화학 증폭형 포지티브 레지스트 조성물

Also Published As

Publication number Publication date
US6485887B2 (en) 2002-11-26
KR20010007194A (ko) 2001-01-26
JP2000347405A (ja) 2000-12-15
TWI253542B (en) 2006-04-21
US20020031722A1 (en) 2002-03-14
KR20040077586A (ko) 2004-09-04
US6340553B1 (en) 2002-01-22
KR100476323B1 (ko) 2005-03-16
KR100510021B1 (ko) 2005-08-25

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