JP3256636B2 - 圧接型半導体装置 - Google Patents

圧接型半導体装置

Info

Publication number
JP3256636B2
JP3256636B2 JP24692794A JP24692794A JP3256636B2 JP 3256636 B2 JP3256636 B2 JP 3256636B2 JP 24692794 A JP24692794 A JP 24692794A JP 24692794 A JP24692794 A JP 24692794A JP 3256636 B2 JP3256636 B2 JP 3256636B2
Authority
JP
Japan
Prior art keywords
electrode plate
chip
semiconductor device
electrode
frame
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP24692794A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0888240A (ja
Inventor
道明 日吉
久儀 村松
隆 藤原
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP24692794A priority Critical patent/JP3256636B2/ja
Priority to MYPI95002683A priority patent/MY131127A/en
Priority to US08/526,320 priority patent/US5610439A/en
Priority to KR1019950029953A priority patent/KR100219345B1/ko
Priority to DE69534968T priority patent/DE69534968T2/de
Priority to EP95114541A priority patent/EP0702406B1/en
Priority to TW084111491A priority patent/TW281796B/zh
Publication of JPH0888240A publication Critical patent/JPH0888240A/ja
Application granted granted Critical
Publication of JP3256636B2 publication Critical patent/JP3256636B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00—Thyristors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/131—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being only partially enclosed
    • H10W74/141—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being only partially enclosed the encapsulations being on at least the sidewalls of the semiconductor body
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W76/00—Containers; Fillings or auxiliary members therefor; Seals
    • H10W76/10—Containers or parts thereof
    • H10W76/12—Containers or parts thereof characterised by their shape
    • H10W76/13—Containers comprising a conductive base serving as an interconnection
    • H10W76/138—Containers comprising a conductive base serving as an interconnection having another interconnection being formed by a cover plate parallel to the conductive base, e.g. sandwich type
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H10D12/441—Vertical IGBTs

Landscapes

  • Die Bonding (AREA)
  • Thyristors (AREA)
JP24692794A 1994-09-15 1994-09-15 圧接型半導体装置 Expired - Fee Related JP3256636B2 (ja)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP24692794A JP3256636B2 (ja) 1994-09-15 1994-09-15 圧接型半導体装置
MYPI95002683A MY131127A (en) 1994-09-15 1995-09-09 Press-contact type semiconductor devices
US08/526,320 US5610439A (en) 1994-09-15 1995-09-11 Press-contact type semiconductor devices
KR1019950029953A KR100219345B1 (ko) 1994-09-15 1995-09-14 압접형 반도체 장치
DE69534968T DE69534968T2 (de) 1994-09-15 1995-09-15 Halbleiteranordnungen vom Druckkontakttyp
EP95114541A EP0702406B1 (en) 1994-09-15 1995-09-15 Press-contact type semiconductor devices
TW084111491A TW281796B (https=) 1994-09-15 1995-10-30

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP24692794A JP3256636B2 (ja) 1994-09-15 1994-09-15 圧接型半導体装置

Publications (2)

Publication Number Publication Date
JPH0888240A JPH0888240A (ja) 1996-04-02
JP3256636B2 true JP3256636B2 (ja) 2002-02-12

Family

ID=17155834

Family Applications (1)

Application Number Title Priority Date Filing Date
JP24692794A Expired - Fee Related JP3256636B2 (ja) 1994-09-15 1994-09-15 圧接型半導体装置

Country Status (7)

Country Link
US (1) US5610439A (https=)
EP (1) EP0702406B1 (https=)
JP (1) JP3256636B2 (https=)
KR (1) KR100219345B1 (https=)
DE (1) DE69534968T2 (https=)
MY (1) MY131127A (https=)
TW (1) TW281796B (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10147699B2 (en) 2015-05-26 2018-12-04 Mitsubishi Electric Corporation Pressure contact type semiconductor apparatus

Families Citing this family (45)

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JP3258200B2 (ja) * 1995-05-31 2002-02-18 株式会社東芝 圧接型半導体装置
US5798287A (en) * 1993-12-24 1998-08-25 Consorzio Per La Ricerca Sulla Microelettronica Nel Mezzogiorno Method for forming a power MOS device chip
DE69321965T2 (de) * 1993-12-24 1999-06-02 Consorzio Per La Ricerca Sulla Microelettronica Nel Mezzogiorno, Catania MOS-Leistungs-Chip-Typ und Packungszusammenbau
US5726466A (en) * 1995-09-11 1998-03-10 Kabushiki Kaisha Toshiba Press pack power semiconductor device incorporating a plurality of semiconductor elements
JP3018971B2 (ja) * 1995-12-18 2000-03-13 富士電機株式会社 半導体装置
JP3319569B2 (ja) * 1996-05-31 2002-09-03 株式会社東芝 圧接型半導体装置
US6125529A (en) * 1996-06-17 2000-10-03 Thermometrics, Inc. Method of making wafer based sensors and wafer chip sensors
JP3426101B2 (ja) * 1997-02-25 2003-07-14 三菱電機株式会社 整流装置
EP1014451A4 (en) * 1997-03-26 2000-11-15 Hitachi Ltd FLAT SEMICONDUCTOR ARRANGEMENT AND RECTIFIER WITH THE SAME
JP3480811B2 (ja) * 1997-07-15 2003-12-22 株式会社東芝 電圧駆動型電力用半導体装置
JP3533317B2 (ja) * 1997-08-28 2004-05-31 株式会社東芝 圧接型半導体装置
JP3344552B2 (ja) * 1997-09-17 2002-11-11 株式会社東芝 圧接型半導体装置
GB9725960D0 (en) 1997-12-08 1998-02-04 Westinghouse Brake & Signal Encapsulating semiconductor chips
CN1236982A (zh) 1998-01-22 1999-12-01 株式会社日立制作所 压力接触型半导体器件及其转换器
JP2930074B1 (ja) * 1998-06-02 1999-08-03 富士電機株式会社 半導体装置
DE19843309A1 (de) * 1998-09-22 2000-03-23 Asea Brown Boveri Kurzschlussfestes IGBT Modul
JP3612226B2 (ja) * 1998-12-21 2005-01-19 株式会社東芝 半導体装置及び半導体モジュール
JP2001036002A (ja) * 1999-07-23 2001-02-09 Fuji Electric Co Ltd 半導体装置
US20020145188A1 (en) * 1999-09-07 2002-10-10 Hironori Kodama Flat semiconductor device and power converter employing the same
DE10048859B4 (de) * 2000-10-02 2005-12-15 Infineon Technologies Ag Druckkontaktanordnung sowie deren Verwendung
JP3954314B2 (ja) * 2001-01-23 2007-08-08 株式会社東芝 圧接型半導体装置
JP4230681B2 (ja) 2001-07-06 2009-02-25 株式会社東芝 高耐圧半導体装置
US6803667B2 (en) * 2001-08-09 2004-10-12 Denso Corporation Semiconductor device having a protective film
JP2004023083A (ja) * 2002-06-20 2004-01-22 Toshiba Corp 圧接型半導体装置
CN100414690C (zh) * 2003-08-21 2008-08-27 株洲时代集团公司 一种大功率器件及其散热器件的压装方法
JP4157001B2 (ja) * 2003-08-28 2008-09-24 株式会社東芝 マルチチップ圧接型半導体装置
JP4764979B2 (ja) * 2004-06-08 2011-09-07 富士電機株式会社 半導体装置
WO2013008424A1 (ja) * 2011-07-11 2013-01-17 三菱電機株式会社 電力用半導体モジュール
US9018035B2 (en) 2012-01-11 2015-04-28 Panasonic Intellectual Property Management Co., Ltd. Pressed-contact type semiconductor device and method for manufacturing the same
CN103390642B (zh) * 2013-08-01 2016-06-22 株洲南车时代电气股份有限公司 一种igbt器件及整晶圆igbt芯片的封装方法
US9177943B2 (en) 2013-10-15 2015-11-03 Ixys Corporation Power device cassette with auxiliary emitter contact
CN104733518B (zh) * 2013-12-24 2019-03-19 南京励盛半导体科技有限公司 一种半导体功率器件的结构
DE102014102493A1 (de) * 2014-02-26 2015-08-27 Infineon Technologies Bipolar Gmbh & Co. Kg Verbesserte Scheibenzelle für mehrere druckkontaktierte Halbleiterbauelemente
DE102014104718B3 (de) * 2014-04-03 2015-08-20 Infineon Technologies Ag Halbleiterbaugruppe mit Chiparrays
EP2966681A1 (en) * 2014-07-09 2016-01-13 GE Energy Power Conversion Technology Ltd Power semiconductor devices
US10551165B2 (en) * 2015-05-01 2020-02-04 Adarza Biosystems, Inc. Methods and devices for the high-volume production of silicon chips with uniform anti-reflective coatings
CN107305886B (zh) * 2016-04-25 2024-04-05 华北电力大学 一种便于串联使用的大功率igbt模块
US11302592B2 (en) 2017-03-08 2022-04-12 Mediatek Inc. Semiconductor package having a stiffener ring
CN109801899B (zh) * 2018-12-27 2021-04-23 全球能源互联网研究院有限公司 一种功率半导体模块
CN115023791B (zh) 2020-01-28 2025-08-26 力特保险丝公司 半导体芯片封装件和组装方法
US11764209B2 (en) 2020-10-19 2023-09-19 MW RF Semiconductors, LLC Power semiconductor device with forced carrier extraction and method of manufacture
CN112687676B (zh) * 2020-12-14 2023-06-27 株洲中车时代半导体有限公司 压接式igbt子模组及压接式igbt模块
JP7580601B2 (ja) 2021-06-11 2024-11-11 三菱電機株式会社 圧接型半導体装置
JP7803811B2 (ja) 2022-08-10 2026-01-21 株式会社東芝 半導体パッケージ
CN118763061B (zh) * 2024-09-06 2025-01-24 淄博美林电子有限公司 一种igbt封装结构及封装方法

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EP0064383A3 (en) * 1981-05-06 1984-06-27 LUCAS INDUSTRIES public limited company A semi-conductor package
US4647959A (en) * 1985-05-20 1987-03-03 Tektronix, Inc. Integrated circuit package, and method of forming an integrated circuit package
JP3137375B2 (ja) * 1990-09-20 2001-02-19 株式会社東芝 圧接型半導体装置
JP3117215B2 (ja) * 1990-09-28 2000-12-11 株式会社東芝 圧接型半導体装置
EP0514615B1 (en) * 1991-05-23 1995-05-03 STMicroelectronics S.r.l. Electronic power device realized by a series of elementary semi-conductor components connected in parallel and related manufacturing process
US5267867A (en) * 1992-09-11 1993-12-07 Digital Equipment Corporation Package for multiple removable integrated circuits
JP3180863B2 (ja) * 1993-07-27 2001-06-25 富士電機株式会社 加圧接触形半導体装置およびその組立方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10147699B2 (en) 2015-05-26 2018-12-04 Mitsubishi Electric Corporation Pressure contact type semiconductor apparatus

Also Published As

Publication number Publication date
KR960012561A (ko) 1996-04-20
MY131127A (en) 2007-07-31
EP0702406B1 (en) 2006-05-03
EP0702406A2 (en) 1996-03-20
TW281796B (https=) 1996-07-21
EP0702406A3 (en) 1996-07-31
DE69534968D1 (de) 2006-06-08
KR100219345B1 (ko) 1999-09-01
DE69534968T2 (de) 2007-02-08
JPH0888240A (ja) 1996-04-02
US5610439A (en) 1997-03-11

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