JP3021800B2 - 半導体装置及びその製造方法 - Google Patents

半導体装置及びその製造方法

Info

Publication number
JP3021800B2
JP3021800B2 JP3171123A JP17112391A JP3021800B2 JP 3021800 B2 JP3021800 B2 JP 3021800B2 JP 3171123 A JP3171123 A JP 3171123A JP 17112391 A JP17112391 A JP 17112391A JP 3021800 B2 JP3021800 B2 JP 3021800B2
Authority
JP
Japan
Prior art keywords
film
ferroelectric
reaction preventing
conductive reaction
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP3171123A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0567792A (ja
Inventor
計廣 竹中
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Original Assignee
Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Priority to JP3171123A priority Critical patent/JP3021800B2/ja
Priority to PCT/JP1991/000992 priority patent/WO1992002050A1/ja
Priority to EP19910913105 priority patent/EP0494313A4/en
Priority to TW080106056A priority patent/TW222707B/zh
Publication of JPH0567792A publication Critical patent/JPH0567792A/ja
Priority to JP11329988A priority patent/JP2000174220A/ja
Application granted granted Critical
Publication of JP3021800B2 publication Critical patent/JP3021800B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors

Landscapes

  • Semiconductor Memories (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Non-Volatile Memory (AREA)
JP3171123A 1990-07-24 1991-07-11 半導体装置及びその製造方法 Expired - Lifetime JP3021800B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP3171123A JP3021800B2 (ja) 1990-07-24 1991-07-11 半導体装置及びその製造方法
PCT/JP1991/000992 WO1992002050A1 (fr) 1990-07-24 1991-07-24 Dispositif a semiconducteur contenant un materiau ferroelectrique
EP19910913105 EP0494313A4 (en) 1990-07-24 1991-07-24 Semiconductor device provided with ferroelectric material
TW080106056A TW222707B (show.php) 1990-07-24 1991-08-02
JP11329988A JP2000174220A (ja) 1990-07-24 1999-11-19 半導体装置

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP19585790 1990-07-24
JP2-195857 1991-07-05
JP3-165553 1991-07-05
JP16555391 1991-07-05
JP3171123A JP3021800B2 (ja) 1990-07-24 1991-07-11 半導体装置及びその製造方法

Related Child Applications (2)

Application Number Title Priority Date Filing Date
JP11329990A Division JP2000124428A (ja) 1990-07-24 1999-11-19 半導体装置
JP11329988A Division JP2000174220A (ja) 1990-07-24 1999-11-19 半導体装置

Publications (2)

Publication Number Publication Date
JPH0567792A JPH0567792A (ja) 1993-03-19
JP3021800B2 true JP3021800B2 (ja) 2000-03-15

Family

ID=27322529

Family Applications (2)

Application Number Title Priority Date Filing Date
JP3171123A Expired - Lifetime JP3021800B2 (ja) 1990-07-24 1991-07-11 半導体装置及びその製造方法
JP11329988A Pending JP2000174220A (ja) 1990-07-24 1999-11-19 半導体装置

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP11329988A Pending JP2000174220A (ja) 1990-07-24 1999-11-19 半導体装置

Country Status (4)

Country Link
EP (1) EP0494313A4 (show.php)
JP (2) JP3021800B2 (show.php)
TW (1) TW222707B (show.php)
WO (1) WO1992002050A1 (show.php)

Families Citing this family (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05211286A (ja) * 1992-01-06 1993-08-20 Nec Corp 容量素子の製造方法
JP3407204B2 (ja) * 1992-07-23 2003-05-19 オリンパス光学工業株式会社 強誘電体集積回路及びその製造方法
US6791131B1 (en) 1993-04-02 2004-09-14 Micron Technology, Inc. Method for forming a storage cell capacitor compatible with high dielectric constant materials
US6531730B2 (en) 1993-08-10 2003-03-11 Micron Technology, Inc. Capacitor compatible with high dielectric constant materials having a low contact resistance layer and the method for forming same
US5392189A (en) * 1993-04-02 1995-02-21 Micron Semiconductor, Inc. Capacitor compatible with high dielectric constant materials having two independent insulative layers and the method for forming same
US5381302A (en) * 1993-04-02 1995-01-10 Micron Semiconductor, Inc. Capacitor compatible with high dielectric constant materials having a low contact resistance layer and the method for forming same
US6030847A (en) * 1993-04-02 2000-02-29 Micron Technology, Inc. Method for forming a storage cell capacitor compatible with high dielectric constant materials
JP2874512B2 (ja) * 1993-05-13 1999-03-24 日本電気株式会社 薄膜キャパシタ及びその製造方法
US5440173A (en) * 1993-09-17 1995-08-08 Radiant Technologies High-temperature electrical contact for making contact to ceramic materials and improved circuit element using the same
KR100287164B1 (ko) * 1993-09-22 2001-04-16 윤종용 반도체장치 및 그 제조방법
US5443688A (en) * 1993-12-02 1995-08-22 Raytheon Company Method of manufacturing a ferroelectric device using a plasma etching process
US5504041A (en) * 1994-08-01 1996-04-02 Texas Instruments Incorporated Conductive exotic-nitride barrier layer for high-dielectric-constant materials
US5554564A (en) * 1994-08-01 1996-09-10 Texas Instruments Incorporated Pre-oxidizing high-dielectric-constant material electrodes
US5622893A (en) * 1994-08-01 1997-04-22 Texas Instruments Incorporated Method of forming conductive noble-metal-insulator-alloy barrier layer for high-dielectric-constant material electrodes
US5498569A (en) * 1994-08-22 1996-03-12 Ramtron International Corporation Layered local interconnect compatible with integrated circuit ferroelectric capacitors
US6271077B1 (en) 1995-03-27 2001-08-07 Fujitsu Limited Thin film deposition method, capacitor device and method for fabricating the same, and semiconductor device and method for fabricating the same
US5874364A (en) 1995-03-27 1999-02-23 Fujitsu Limited Thin film deposition method, capacitor device and method for fabricating the same, and semiconductor device and method for fabricating the same
JP3373525B2 (ja) * 1995-06-28 2003-02-04 テルコーディア テクノロジーズ インコーポレイテッド シリコン上に集積された多層強誘電体セルおよびペロブスカイト電子へテロ構造
IL126918A (en) 1996-05-08 2007-06-03 Biogen Idec Inc Ret ligand (retl) for stimulating neural and renal growth
JPH11195753A (ja) * 1997-10-27 1999-07-21 Seiko Epson Corp 半導体装置およびその製造方法
KR100275113B1 (ko) * 1997-12-30 2001-01-15 김영환 반도체장치의강유전체캐패시터제조방법
GB2340303B (en) * 1998-08-07 2000-12-27 United Microelectronics Corp Capacitor and method for fabricating the same
US6762090B2 (en) 2001-09-13 2004-07-13 Hynix Semiconductor Inc. Method for fabricating a capacitor
JP2004221467A (ja) 2003-01-17 2004-08-05 Fujitsu Ltd 半導体装置及びその製造方法
JP2006086292A (ja) 2004-09-15 2006-03-30 Toshiba Corp 半導体記憶装置およびその製造方法
JP4659772B2 (ja) * 2007-02-15 2011-03-30 Ｏｋｉセミコンダクタ株式会社 半導体素子の製造方法
CN108110007A (zh) * 2017-11-03 2018-06-01 中国科学院微电子研究所 铁电存储器及其访问方法
WO2020210257A1 (en) 2019-04-08 2020-10-15 Kepler Computing Inc. Doped polar layers and semiconductor device incorporating same

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01251760A (ja) * 1988-03-31 1989-10-06 Seiko Epson Corp 強誘電体記憶装置
JPH02183570A (ja) * 1989-01-10 1990-07-18 Seiko Epson Corp 強誘電体集積回路装置とその製造方法
JPH02288367A (ja) * 1989-04-28 1990-11-28 Seiko Epson Corp 半導体装置
US5005102A (en) * 1989-06-20 1991-04-02 Ramtron Corporation Multilayer electrodes for integrated circuit capacitors
EP0417341B1 (de) * 1989-09-13 1994-03-02 Deutsche ITT Industries GmbH Kapazitätsstruktur für Feldeffekttransistor-Halbleiterspeicher

Also Published As

Publication number Publication date
JPH0567792A (ja) 1993-03-19
WO1992002050A1 (fr) 1992-02-06
TW222707B (show.php) 1994-04-21
JP2000174220A (ja) 2000-06-23
EP0494313A4 (en) 1992-10-28
EP0494313A1 (en) 1992-07-15

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