JP2023109817A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2023109817A5 JP2023109817A5 JP2023076776A JP2023076776A JP2023109817A5 JP 2023109817 A5 JP2023109817 A5 JP 2023109817A5 JP 2023076776 A JP2023076776 A JP 2023076776A JP 2023076776 A JP2023076776 A JP 2023076776A JP 2023109817 A5 JP2023109817 A5 JP 2023109817A5
- Authority
- JP
- Japan
- Prior art keywords
- group
- carbon atoms
- compound
- manufacturing
- plasma
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 claims description 149
- 125000004432 carbon atom Chemical group C* 0.000 claims description 116
- 150000001875 compounds Chemical class 0.000 claims description 115
- 238000004519 manufacturing process Methods 0.000 claims description 83
- 239000011248 coating agent Substances 0.000 claims description 76
- 238000000576 coating method Methods 0.000 claims description 76
- 239000000203 mixture Substances 0.000 claims description 75
- 238000000034 method Methods 0.000 claims description 51
- 239000004065 semiconductor Substances 0.000 claims description 43
- 125000002947 alkylene group Chemical group 0.000 claims description 38
- 239000004593 Epoxy Substances 0.000 claims description 33
- 125000000732 arylene group Chemical group 0.000 claims description 31
- 239000007789 gas Substances 0.000 claims description 30
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims description 25
- 125000002915 carbonyl group Chemical group [*:2]C([*:1])=O 0.000 claims description 24
- 125000004430 oxygen atom Chemical group O* 0.000 claims description 23
- 125000000217 alkyl group Chemical group 0.000 claims description 21
- 238000005530 etching Methods 0.000 claims description 20
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 claims description 18
- 229910052717 sulfur Inorganic materials 0.000 claims description 17
- 125000004434 sulfur atom Chemical group 0.000 claims description 17
- 125000003277 amino group Chemical group 0.000 claims description 14
- 229910052757 nitrogen Inorganic materials 0.000 claims description 14
- 125000004433 nitrogen atom Chemical group N* 0.000 claims description 14
- 239000007795 chemical reaction product Substances 0.000 claims description 13
- BRLQWZUYTZBJKN-UHFFFAOYSA-N Epichlorohydrin Chemical compound ClCC1CO1 BRLQWZUYTZBJKN-UHFFFAOYSA-N 0.000 claims description 12
- 150000001408 amides Chemical group 0.000 claims description 12
- -1 cyclohexyl compound Chemical class 0.000 claims description 12
- 230000001678 irradiating effect Effects 0.000 claims description 12
- 125000004429 atom Chemical group 0.000 claims description 9
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 8
- 229910052760 oxygen Inorganic materials 0.000 claims description 8
- 239000001301 oxygen Substances 0.000 claims description 8
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims description 7
- 150000008065 acid anhydrides Chemical class 0.000 claims description 7
- 125000004448 alkyl carbonyl group Chemical group 0.000 claims description 7
- 238000001312 dry etching Methods 0.000 claims description 7
- 229910052731 fluorine Inorganic materials 0.000 claims description 7
- 239000011737 fluorine Substances 0.000 claims description 7
- 239000011261 inert gas Substances 0.000 claims description 7
- 239000002904 solvent Substances 0.000 claims description 7
- 239000000126 substance Substances 0.000 claims description 7
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 claims description 6
- 150000001412 amines Chemical class 0.000 claims description 6
- 150000001732 carboxylic acid derivatives Chemical class 0.000 claims description 6
- 238000010894 electron beam technology Methods 0.000 claims description 6
- 125000003055 glycidyl group Chemical group C(C1CO1)* 0.000 claims description 6
- 238000010438 heat treatment Methods 0.000 claims description 6
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims description 6
- ZFSLODLOARCGLH-UHFFFAOYSA-N isocyanuric acid Chemical compound OC1=NC(O)=NC(O)=N1 ZFSLODLOARCGLH-UHFFFAOYSA-N 0.000 claims description 6
- 239000011347 resin Substances 0.000 claims description 6
- 229920005989 resin Polymers 0.000 claims description 6
- 150000003573 thiols Chemical class 0.000 claims description 6
- 125000003368 amide group Chemical group 0.000 claims description 5
- 125000003700 epoxy group Chemical group 0.000 claims description 4
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 claims description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 3
- 239000002253 acid Substances 0.000 claims description 3
- 150000001350 alkyl halides Chemical class 0.000 claims description 3
- 229910001882 dioxygen Inorganic materials 0.000 claims description 3
- 150000004820 halides Chemical class 0.000 claims description 3
- 229910052736 halogen Inorganic materials 0.000 claims description 3
- 150000002367 halogens Chemical class 0.000 claims description 3
- 150000003949 imides Chemical class 0.000 claims description 3
- 239000012948 isocyanate Substances 0.000 claims description 3
- 150000002513 isocyanates Chemical class 0.000 claims description 3
- 238000001459 lithography Methods 0.000 claims description 3
- 239000000376 reactant Substances 0.000 claims description 2
- 229910052799 carbon Inorganic materials 0.000 description 3
- 239000008199 coating composition Substances 0.000 description 1
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2024189328A JP2025016600A (ja) | 2017-04-14 | 2024-10-28 | レジスト下層膜形成組成物 |
| JP2024189320A JP2025028836A (ja) | 2017-04-14 | 2024-10-28 | レジスト下層膜形成組成物 |
| JP2024211790A JP7853654B2 (ja) | 2017-04-14 | 2024-12-04 | 炭素原子間の不飽和結合によるプラズマ硬化性化合物を含む段差基板被覆膜形成組成物 |
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2017080826 | 2017-04-14 | ||
| JP2017080826 | 2017-04-14 | ||
| PCT/JP2018/015268 WO2018190380A1 (ja) | 2017-04-14 | 2018-04-11 | 炭素原子間の不飽和結合によるプラズマ硬化性化合物を含む段差基板被覆膜形成組成物 |
| JP2019512557A JP7332982B2 (ja) | 2017-04-14 | 2018-04-11 | 炭素原子間の不飽和結合によるプラズマ硬化性化合物を含む段差基板被覆膜形成組成物 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2019512557A Division JP7332982B2 (ja) | 2017-04-14 | 2018-04-11 | 炭素原子間の不飽和結合によるプラズマ硬化性化合物を含む段差基板被覆膜形成組成物 |
Related Child Applications (3)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2024189328A Division JP2025016600A (ja) | 2017-04-14 | 2024-10-28 | レジスト下層膜形成組成物 |
| JP2024189320A Division JP2025028836A (ja) | 2017-04-14 | 2024-10-28 | レジスト下層膜形成組成物 |
| JP2024211790A Division JP7853654B2 (ja) | 2017-04-14 | 2024-12-04 | 炭素原子間の不飽和結合によるプラズマ硬化性化合物を含む段差基板被覆膜形成組成物 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2023109817A JP2023109817A (ja) | 2023-08-08 |
| JP2023109817A5 true JP2023109817A5 (https=) | 2023-10-24 |
| JP7601942B2 JP7601942B2 (ja) | 2024-12-17 |
Family
ID=63793449
Family Applications (4)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2019512557A Active JP7332982B2 (ja) | 2017-04-14 | 2018-04-11 | 炭素原子間の不飽和結合によるプラズマ硬化性化合物を含む段差基板被覆膜形成組成物 |
| JP2023076776A Active JP7601942B2 (ja) | 2017-04-14 | 2023-05-08 | 炭素原子間の不飽和結合によるプラズマ硬化性化合物を含む段差基板被覆膜形成組成物 |
| JP2024189328A Pending JP2025016600A (ja) | 2017-04-14 | 2024-10-28 | レジスト下層膜形成組成物 |
| JP2024189320A Pending JP2025028836A (ja) | 2017-04-14 | 2024-10-28 | レジスト下層膜形成組成物 |
Family Applications Before (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2019512557A Active JP7332982B2 (ja) | 2017-04-14 | 2018-04-11 | 炭素原子間の不飽和結合によるプラズマ硬化性化合物を含む段差基板被覆膜形成組成物 |
Family Applications After (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2024189328A Pending JP2025016600A (ja) | 2017-04-14 | 2024-10-28 | レジスト下層膜形成組成物 |
| JP2024189320A Pending JP2025028836A (ja) | 2017-04-14 | 2024-10-28 | レジスト下層膜形成組成物 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US11385546B2 (https=) |
| JP (4) | JP7332982B2 (https=) |
| KR (3) | KR20240119168A (https=) |
| CN (1) | CN110546568B (https=) |
| TW (2) | TWI898931B (https=) |
| WO (1) | WO2018190380A1 (https=) |
Families Citing this family (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113544586B (zh) * | 2019-03-12 | 2025-12-19 | 日产化学株式会社 | 抗蚀剂下层膜形成用组合物 |
| KR20250136439A (ko) * | 2019-04-26 | 2025-09-16 | 메르크 파텐트 게엠베하 | 경화막의 제조방법 및 이의 용도 |
| JP2020183506A (ja) * | 2019-04-26 | 2020-11-12 | メルク、パテント、ゲゼルシャフト、ミット、ベシュレンクテル、ハフツングＭｅｒｃｋ Ｐａｔｅｎｔ ＧｍｂＨ | 硬化膜の製造方法、およびその使用 |
| WO2021070775A1 (ja) * | 2019-10-09 | 2021-04-15 | 日産化学株式会社 | レジスト下層膜形成組成物 |
| JP7316237B2 (ja) | 2020-03-02 | 2023-07-27 | 信越化学工業株式会社 | 有機膜形成材料、有機膜形成方法、パターン形成方法及び化合物 |
| JPWO2023033094A1 (https=) | 2021-09-02 | 2023-03-09 | ||
| TW202337929A (zh) | 2021-11-15 | 2023-10-01 | 日商日產化學股份有限公司 | 多環芳香族烴系光硬化性樹脂組成物 |
| WO2023162968A1 (ja) | 2022-02-22 | 2023-08-31 | 日産化学株式会社 | 自己架橋性ポリマーを含む光硬化性樹脂組成物 |
| EP4492142A4 (en) | 2022-03-10 | 2026-03-18 | Nissan Chemical Corp | Wafer edge protective film-forming composition for semiconductor manufacturing |
| KR20240026598A (ko) | 2022-08-22 | 2024-02-29 | 현대모비스 주식회사 | 최적화된 부품 배치를 갖는 dmd 헤드램프 및 이를 포함하는 이동체 |
| EP4435516A1 (en) * | 2023-03-16 | 2024-09-25 | Shin-Etsu Chemical Co., Ltd. | Method for forming resist underlayer film and patterning process |
| JP2025010495A (ja) | 2023-07-07 | 2025-01-21 | 信越化学工業株式会社 | レジスト下層膜形成方法及びパターン形成方法 |
| WO2025127018A1 (ja) * | 2023-12-11 | 2025-06-19 | 日産化学株式会社 | レジスト下層膜形成用組成物 |
| WO2026048760A1 (ja) * | 2024-08-30 | 2026-03-05 | 日産化学株式会社 | レジスト下層膜形成用組成物 |
Family Cites Families (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2002083415A1 (en) | 2001-04-17 | 2002-10-24 | Brewer Science, Inc. | Anti-reflective coating composition with improved spin bowl compatibility |
| CA2392980A1 (en) | 2002-07-11 | 2004-01-11 | Lifescan, Inc. | Electrochemical test strip having a plurality of reaction chambers and methods for using the same |
| CN102621814A (zh) | 2005-04-19 | 2012-08-01 | 日产化学工业株式会社 | 用于形成光交联固化的抗蚀剂下层膜的抗蚀剂下层膜形成组合物 |
| JP2007078890A (ja) * | 2005-09-12 | 2007-03-29 | Fujifilm Corp | 感光性組成物、パターン形成材料、感光性積層体、並びにパターン形成装置及びパターン形成方法 |
| KR101436336B1 (ko) | 2005-12-06 | 2014-09-01 | 닛산 가가쿠 고교 가부시키 가이샤 | 광가교 경화의 레지스트 하층막을 형성하기 위한 규소 함유레지스트 하층막 형성 조성물 |
| WO2008047638A1 (en) | 2006-10-12 | 2008-04-24 | Nissan Chemical Industries, Ltd. | Process for semiconductor device production using under-resist film cured by photocrosslinking |
| JP5158381B2 (ja) | 2007-07-11 | 2013-03-06 | 日産化学工業株式会社 | レジスト下層膜形成組成物及びそれを用いたレジストパターンの形成方法 |
| KR101766796B1 (ko) * | 2008-11-27 | 2017-08-09 | 닛산 가가쿠 고교 가부시키 가이샤 | 아웃가스 발생이 저감된 레지스트 하층막 형성 조성물 |
| JP2012186373A (ja) | 2011-03-07 | 2012-09-27 | Panasonic Corp | Ｅｕｖマスクブランクスの検査方法、ｅｕｖフォトマスクの製造方法、及びパターン形成方法 |
| TWI618985B (zh) * | 2011-08-10 | 2018-03-21 | 日產化學工業股份有限公司 | 具有碸構造之含矽阻劑底層膜形成組成物 |
| SG11201606648QA (en) * | 2014-02-12 | 2016-09-29 | Nissan Chemical Ind Ltd | Film-forming composition including fluorine-containing surfactant |
| JP6394926B2 (ja) * | 2014-03-26 | 2018-09-26 | 日産化学株式会社 | 添加剤及び該添加剤を含むレジスト下層膜形成組成物 |
| JP6404757B2 (ja) | 2015-03-27 | 2018-10-17 | 信越化学工業株式会社 | レジスト下層膜材料用重合体、レジスト下層膜材料、及びパターン形成方法 |
| KR102460271B1 (ko) * | 2015-04-03 | 2022-10-28 | 닛산 가가쿠 가부시키가이샤 | 광가교기를 가지는 단차 기판 피복 조성물 |
| JP6372887B2 (ja) * | 2015-05-14 | 2018-08-15 | 信越化学工業株式会社 | 有機膜材料、有機膜形成方法、パターン形成方法、及び化合物 |
| JP6714492B2 (ja) * | 2015-12-24 | 2020-06-24 | 信越化学工業株式会社 | 有機膜形成用化合物、有機膜形成用組成物、有機膜形成方法、及びパターン形成方法 |
| WO2017154921A1 (ja) * | 2016-03-10 | 2017-09-14 | 日産化学工業株式会社 | 炭素原子間の不飽和結合による光架橋基を有する化合物を含む段差基板被覆組成物 |
-
2018
- 2018-04-11 KR KR1020247025010A patent/KR20240119168A/ko active Pending
- 2018-04-11 KR KR1020197032358A patent/KR102593861B1/ko active Active
- 2018-04-11 US US16/605,440 patent/US11385546B2/en active Active
- 2018-04-11 CN CN201880024514.7A patent/CN110546568B/zh active Active
- 2018-04-11 WO PCT/JP2018/015268 patent/WO2018190380A1/ja not_active Ceased
- 2018-04-11 KR KR1020237034515A patent/KR102690024B1/ko active Active
- 2018-04-11 JP JP2019512557A patent/JP7332982B2/ja active Active
- 2018-04-13 TW TW113144252A patent/TWI898931B/zh active
- 2018-04-13 TW TW107112687A patent/TWI857936B/zh active
-
2023
- 2023-05-08 JP JP2023076776A patent/JP7601942B2/ja active Active
-
2024
- 2024-10-28 JP JP2024189328A patent/JP2025016600A/ja active Pending
- 2024-10-28 JP JP2024189320A patent/JP2025028836A/ja active Pending
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2023109817A5 (https=) | ||
| JP2022097388A (ja) | 半導体フォトレジスト用組成物およびそれを用いたパターン形成方法 | |
| JP5571788B2 (ja) | ダブルパターニング方法及び材料 | |
| TWI596159B (zh) | Reverse pattern forming method and polysiloxane resin composition | |
| Kim et al. | Vinyl ethers in ultraviolet curable formulations for step and flash imprint lithography | |
| KR102003345B1 (ko) | 레지스트 하층막용 조성물 및 이를 이용한 패턴형성방법 | |
| JP2023159163A5 (https=) | ||
| CN109071576A (zh) | 倍半硅氧烷树脂和氧杂胺组合物 | |
| JPS6059583B2 (ja) | マイクログラビア用感光性フイルム及びその製法 | |
| US12590221B2 (en) | Resist topcoat composition, and method of forming patterns using the composition | |
| US20240360264A1 (en) | Chemical compositions & methods of patterning microelectronic device structures | |
| TWI751171B (zh) | 富矽之矽倍半氧烷樹脂 | |
| CN109153690A (zh) | 倍半硅氧烷树脂和甲硅烷基酐组合物 | |
| KR20190039472A (ko) | 광경화성 조성물 및 반도체장치의 제조방법 | |
| KR20120071856A (ko) | 하드마스크용 조성물 및 이를 이용한 반도체 소자의 패턴 형성 방법 | |
| JPWO2020255984A5 (https=) | ||
| JP2009265294A (ja) | 感光性樹脂組成物 | |
| TW201229693A (en) | Gap embedding composition, method of embedding gap and method of producing semiconductor device by using the composition | |
| JPH09189998A (ja) | パターン形成材料及びパターン形成方法 | |
| US20230026579A1 (en) | Method for forming photoresist patterns | |
| KR20190078305A (ko) | 레지스트 하층막용 조성물 및 이를 이용한 패턴 형성 방법 | |
| KR20110113472A (ko) | 하드마스크용 화합물 및 이를 포함하는 하드마스크 조성물 | |
| TW200405126A (en) | Radiation-sensitive negative-type resist composition for pattern formation and pattern formation method | |
| KR102563287B1 (ko) | 레지스트 하층막용 조성물 및 이를 이용한 패턴형성방법 | |
| JPS6233737B2 (https=) |