WO2018190380A1 - 炭素原子間の不飽和結合によるプラズマ硬化性化合物を含む段差基板被覆膜形成組成物 - Google Patents

炭素原子間の不飽和結合によるプラズマ硬化性化合物を含む段差基板被覆膜形成組成物 Download PDF

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Publication number
WO2018190380A1
WO2018190380A1 PCT/JP2018/015268 JP2018015268W WO2018190380A1 WO 2018190380 A1 WO2018190380 A1 WO 2018190380A1 JP 2018015268 W JP2018015268 W JP 2018015268W WO 2018190380 A1 WO2018190380 A1 WO 2018190380A1
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Prior art keywords
group
compound
carbon atoms
plasma
coating film
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Ceased
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PCT/JP2018/015268
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English (en)
French (fr)
Japanese (ja)
Inventor
貴文 遠藤
光 ▲徳▼永
橋本　圭祐
坂本　力丸
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Nissan Chemical Corp
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Nissan Chemical Corp
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Priority to US16/605,440 priority Critical patent/US11385546B2/en
Priority to KR1020197032358A priority patent/KR102593861B1/ko
Priority to JP2019512557A priority patent/JP7332982B2/ja
Priority to CN201880024514.7A priority patent/CN110546568B/zh
Priority to KR1020247025010A priority patent/KR20240119168A/ko
Application filed by Nissan Chemical Corp filed Critical Nissan Chemical Corp
Priority to KR1020237034515A priority patent/KR102690024B1/ko
Publication of WO2018190380A1 publication Critical patent/WO2018190380A1/ja
Anticipated expiration legal-status Critical
Priority to JP2023076776A priority patent/JP7601942B2/ja
Priority to JP2024189320A priority patent/JP2025028836A/ja
Priority to JP2024189328A priority patent/JP2025016600A/ja
Priority to JP2024211790A priority patent/JP7853654B2/ja
Ceased legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/094—Multilayer resist systems, e.g. planarising layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/80—Etching
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/025—Non-macromolecular photopolymerisable compounds having carbon-to-carbon triple bonds, e.g. acetylenic compounds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • G03F7/167—Coating processes; Apparatus therefor from the gas phase, by plasma deposition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/22—Exposing sequentially with the same light pattern different positions of the same surface
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/38—Treatment before imagewise removal, e.g. prebaking
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/08—Planarisation of organic insulating materials

Definitions

  • the partial structure (I) represented by the following formulas (1-1) to (1-7): (Wherein R 1 , R 1a , R 3 , R 5a , and R 6a are each independently an alkylene group having 1 to 10 carbon atoms, an arylene group having 6 to 40 carbon atoms (the alkylene group and arylene group) Optionally substituted with one or more amide groups or amino groups), oxygen atom, carbonyl group, sulfur atom, —C (O) —NR a —, —NR b —, or Each of R 5 independently represents a nitrogen atom, a nitrogen atom and an alkylene group having 1 to 10 carbon atoms, or an arylene group having 6 to 40 carbon atoms (the alkylene group).
  • the epoxy compound (B) is a glycidyl group-containing ether, a reaction product of a phenolic hydroxy group-containing compound and epichlorohydrin, a reaction product of a phenolic hydroxy group-containing resin and epichlorohydrin, a glycidyl group-containing isocyanurate
  • the plasma curable stepped substrate coating film forming composition according to the third aspect or the fourth aspect which is an epoxycyclohexyl group-containing compound, an epoxy group-substituted cyclohexyl compound, or a glycidyl ester compound
  • the epoxy compound (C) containing an unsaturated bond between carbon atoms includes an unsaturated bond-containing glycidyl ester compound between carbon atoms, a phenolic hydroxy group-containing compound containing an unsaturated bond between carbon atoms, and epich
  • R a represents a hydrogen atom or an alkyl group having 1 to 10 carbon atoms
  • R b represents a hydrogen atom, an alkyl group having 1 to 10 carbon atoms, or an alkylcarbonyl group having 1 to 10 carbon atoms
  • n represents the number of repeating units having 1 to 10 carbon atoms
  • a dotted line represents a chemical atom with an adjacent atom. Represents a bond.
  • R 5a and R 6a are each a divalent group consisting of an alkylene group having 1 to 10 carbon atoms, an arylene group having 6 to 40 carbon atoms, an oxygen atom, a carbonyl group, a sulfur atom, or a combination thereof. be able to.
  • Compound (E) can form a crosslinked structure by plasma reaction of an unsaturated bond between carbon atoms between molecules or within the molecule, but this unsaturated bond between carbon atoms, that is, between carbon atoms. It can have at least one unsaturated double bond in the molecule, and can also have a plurality (for example, 1 to 1000) in the molecule.
  • R 1 , R 3 , R 5 , R 5a , R 6a , R 1a of the partial structure (I) and the oxygen atom of the ester group are R 7 and R 10 , or R 9 and R 11 of the partial structure (II).
  • the proportion of hydroxyl groups to be generated increases.
  • the molar ratio is 1: 4. Up to a ratio of
  • a stepped substrate coating film forming composition is applied to a substrate used for manufacturing a precision integrated circuit element (for example, a transparent substrate such as a silicon / silicon dioxide coating, a glass substrate, an ITO substrate) by an appropriate coating method such as a spinner or a coater. After coating, the coating is baked (heated) and irradiated with plasma. That is, a coated substrate is manufactured including a step (i) of applying a stepped substrate coating film forming composition to a stepped substrate and a step (ii) of irradiating plasma.
  • sodium hydroxide, potassium hydroxide, sodium carbonate, sodium silicate, sodium metasilicate, Inorganic alkalis such as aqueous ammonia, primary amines such as ethylamine and n-propylamine, secondary amines such as diethylamine and di-n-butylamine, tertiary amines such as triethylamine and methyldiethylamine, dimethylethanolamine, Alcohol aqueous solutions such as alcohol amines such as ethanolamine, quaternary ammonium salts such as tetramethylammonium hydroxide, tetraethylammonium hydroxide and choline, cyclic amines such as pyrrole and piperidine, and the like can be used.
  • stepped substrate coating films with a dry etching rate selectivity close to that of resists, and lower dry etching rates than resists Therefore, there is a demand for a stepped substrate coating film having a selectivity ratio of 1 and a stepped substrate coating film having a selectivity ratio of a dry etching rate smaller than that of a semiconductor substrate. Further, such a stepped substrate coating film can be provided with an antireflection ability, and can also have a function of a conventional antireflection film.
  • a process of making the resist pattern and the stepped substrate coating film thinner than the pattern width at the time of developing the resist during dry etching of the stepped substrate coating film has begun to be used.
  • a stepped substrate coating film having a selectivity of dry etching rate close to that of a resist is required as a stepped substrate coating film for such a process.
  • such a stepped substrate coating film can be provided with an antireflection ability, and can also have a function of a conventional antireflection film.
  • the stepped substrate coating according to the present invention has a function of preventing reflection of light depending on process conditions, and further prevents the interaction between the substrate and the photoresist or at the time of exposure to the material used for the photoresist or the photoresist. It can be used as a film having a function of preventing an adverse effect of a substance to be generated on a substrate.
  • Cation exchange resin product name: Dowex [registered trademark] 550A, Muromachi Technos Co., Ltd. 15 g
  • anion exchange resin product name: Amberlite [registered trademark] 15 JWET, Organo Co., Ltd. 15 g
  • ion exchange treatment was performed at room temperature for 4 hours.
  • a compound (E) solution was obtained.
  • the obtained compound (E) corresponds to the formula (E-1), and the weight average molecular weight Mw measured by GPC in terms of polystyrene was 1400.
  • the dry etching apparatus is accompanied by irradiation with an etching gas, it is considered that the stepped substrate coating film is cured by the plasma component which is a component of the etching gas.
  • a cured film having solvent resistance was formed by adding a thermal crosslinking agent without dry etching.

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Materials For Photolithography (AREA)
  • Epoxy Resins (AREA)
  • Paints Or Removers (AREA)
  • Other Resins Obtained By Reactions Not Involving Carbon-To-Carbon Unsaturated Bonds (AREA)
  • Polymerisation Methods In General (AREA)
  • Chemical & Material Sciences (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Drying Of Semiconductors (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Health & Medical Sciences (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
  • Emergency Medicine (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Formation Of Insulating Films (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)
  • Laminated Bodies (AREA)
PCT/JP2018/015268 2017-04-14 2018-04-11 炭素原子間の不飽和結合によるプラズマ硬化性化合物を含む段差基板被覆膜形成組成物 Ceased WO2018190380A1 (ja)

Priority Applications (10)

Application Number Priority Date Filing Date Title
KR1020237034515A KR102690024B1 (ko) 2017-04-14 2018-04-11 탄소원자간의 불포화결합에 의한 플라즈마 경화성 화합물을 포함하는 단차기판 피복막 형성 조성물
KR1020197032358A KR102593861B1 (ko) 2017-04-14 2018-04-11 탄소원자간의 불포화결합에 의한 플라즈마 경화성 화합물을 포함하는 단차기판 피복막 형성 조성물
JP2019512557A JP7332982B2 (ja) 2017-04-14 2018-04-11 炭素原子間の不飽和結合によるプラズマ硬化性化合物を含む段差基板被覆膜形成組成物
CN201880024514.7A CN110546568B (zh) 2017-04-14 2018-04-11 包含采用碳原子间的不饱和键的等离子体固化性化合物的高低差基板被覆膜形成用组合物
KR1020247025010A KR20240119168A (ko) 2017-04-14 2018-04-11 레지스트 하층막 형성 조성물
US16/605,440 US11385546B2 (en) 2017-04-14 2018-04-11 Multi-level substrate coating film-forming composition containing plasma-curable compound based on unsaturated bonds between carbon atoms
JP2023076776A JP7601942B2 (ja) 2017-04-14 2023-05-08 炭素原子間の不飽和結合によるプラズマ硬化性化合物を含む段差基板被覆膜形成組成物
JP2024189328A JP2025016600A (ja) 2017-04-14 2024-10-28 レジスト下層膜形成組成物
JP2024189320A JP2025028836A (ja) 2017-04-14 2024-10-28 レジスト下層膜形成組成物
JP2024211790A JP7853654B2 (ja) 2017-04-14 2024-12-04 炭素原子間の不飽和結合によるプラズマ硬化性化合物を含む段差基板被覆膜形成組成物

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2017-080826 2017-04-14
JP2017080826 2017-04-14

Publications (1)

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WO2018190380A1 true WO2018190380A1 (ja) 2018-10-18

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PCT/JP2018/015268 Ceased WO2018190380A1 (ja) 2017-04-14 2018-04-11 炭素原子間の不飽和結合によるプラズマ硬化性化合物を含む段差基板被覆膜形成組成物

Country Status (6)

Country Link
US (1) US11385546B2 (https=)
JP (4) JP7332982B2 (https=)
KR (3) KR20240119168A (https=)
CN (1) CN110546568B (https=)
TW (2) TWI898931B (https=)
WO (1) WO2018190380A1 (https=)

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2020184380A1 (ja) * 2019-03-12 2020-09-17 日産化学株式会社 レジスト下層膜形成組成物
EP3879341A1 (en) * 2020-03-02 2021-09-15 Shin-Etsu Chemical Co., Ltd. Material for forming organic film, method for forming organic film, patterning process, and compound
KR20220005545A (ko) * 2019-04-26 2022-01-13 메르크 파텐트 게엠베하 경화막의 제조방법 및 이의 용도
CN114503032A (zh) * 2019-10-09 2022-05-13 日产化学株式会社 抗蚀剂下层膜形成用组合物
WO2023033094A1 (ja) 2021-09-02 2023-03-09 日産化学株式会社 半導体製造用ウエハ端部保護膜形成組成物
WO2023085414A1 (ja) 2021-11-15 2023-05-19 日産化学株式会社 多環芳香族炭化水素系光硬化性樹脂組成物
WO2023162968A1 (ja) 2022-02-22 2023-08-31 日産化学株式会社 自己架橋性ポリマーを含む光硬化性樹脂組成物
WO2023171733A1 (ja) 2022-03-10 2023-09-14 日産化学株式会社 半導体製造用ウエハ端部保護膜形成用組成物
KR20240140836A (ko) * 2023-03-16 2024-09-24 신에쓰 가가꾸 고교 가부시끼가이샤 레지스트 하층막 형성 방법 및 패턴 형성 방법
WO2026048760A1 (ja) * 2024-08-30 2026-03-05 日産化学株式会社 レジスト下層膜形成用組成物

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Publication number Priority date Publication date Assignee Title
JP2020183506A (ja) * 2019-04-26 2020-11-12 メルク、パテント、ゲゼルシャフト、ミット、ベシュレンクテル、ハフツングＭｅｒｃｋ Ｐａｔｅｎｔ ＧｍｂＨ 硬化膜の製造方法、およびその使用
KR20240026598A (ko) 2022-08-22 2024-02-29 현대모비스 주식회사 최적화된 부품 배치를 갖는 dmd 헤드램프 및 이를 포함하는 이동체
JP2025010495A (ja) 2023-07-07 2025-01-21 信越化学工業株式会社 レジスト下層膜形成方法及びパターン形成方法
WO2025127018A1 (ja) * 2023-12-11 2025-06-19 日産化学株式会社 レジスト下層膜形成用組成物

Citations (4)

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