JP7332982B2 - 炭素原子間の不飽和結合によるプラズマ硬化性化合物を含む段差基板被覆膜形成組成物 - Google Patents

炭素原子間の不飽和結合によるプラズマ硬化性化合物を含む段差基板被覆膜形成組成物 Download PDF

Info

Publication number
JP7332982B2
JP7332982B2 JP2019512557A JP2019512557A JP7332982B2 JP 7332982 B2 JP7332982 B2 JP 7332982B2 JP 2019512557 A JP2019512557 A JP 2019512557A JP 2019512557 A JP2019512557 A JP 2019512557A JP 7332982 B2 JP7332982 B2 JP 7332982B2
Authority
JP
Japan
Prior art keywords
group
carbon atoms
plasma
coating film
forming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2019512557A
Other languages
English (en)
Japanese (ja)
Other versions
JPWO2018190380A1 (ja
Inventor
貴文 遠藤
光 ▲徳▼永
圭祐 橋本
力丸 坂本
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nissan Chemical Corp
Original Assignee
Nissan Chemical Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=63793449&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=JP7332982(B2) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Nissan Chemical Corp filed Critical Nissan Chemical Corp
Publication of JPWO2018190380A1 publication Critical patent/JPWO2018190380A1/ja
Priority to JP2023076776A priority Critical patent/JP7601942B2/ja
Application granted granted Critical
Publication of JP7332982B2 publication Critical patent/JP7332982B2/ja
Priority to JP2024189328A priority patent/JP2025016600A/ja
Priority to JP2024189320A priority patent/JP2025028836A/ja
Priority to JP2024211790A priority patent/JP7853654B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/094—Multilayer resist systems, e.g. planarising layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/80—Etching
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/025—Non-macromolecular photopolymerisable compounds having carbon-to-carbon triple bonds, e.g. acetylenic compounds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • G03F7/167—Coating processes; Apparatus therefor from the gas phase, by plasma deposition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/22—Exposing sequentially with the same light pattern different positions of the same surface
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/38—Treatment before imagewise removal, e.g. prebaking
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/08—Planarisation of organic insulating materials

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Materials For Photolithography (AREA)
  • Epoxy Resins (AREA)
  • Paints Or Removers (AREA)
  • Other Resins Obtained By Reactions Not Involving Carbon-To-Carbon Unsaturated Bonds (AREA)
  • Polymerisation Methods In General (AREA)
  • Chemical & Material Sciences (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Drying Of Semiconductors (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Health & Medical Sciences (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
  • Emergency Medicine (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Formation Of Insulating Films (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)
  • Laminated Bodies (AREA)
JP2019512557A 2017-04-14 2018-04-11 炭素原子間の不飽和結合によるプラズマ硬化性化合物を含む段差基板被覆膜形成組成物 Active JP7332982B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2023076776A JP7601942B2 (ja) 2017-04-14 2023-05-08 炭素原子間の不飽和結合によるプラズマ硬化性化合物を含む段差基板被覆膜形成組成物
JP2024189328A JP2025016600A (ja) 2017-04-14 2024-10-28 レジスト下層膜形成組成物
JP2024189320A JP2025028836A (ja) 2017-04-14 2024-10-28 レジスト下層膜形成組成物
JP2024211790A JP7853654B2 (ja) 2017-04-14 2024-12-04 炭素原子間の不飽和結合によるプラズマ硬化性化合物を含む段差基板被覆膜形成組成物

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2017080826 2017-04-14
JP2017080826 2017-04-14
PCT/JP2018/015268 WO2018190380A1 (ja) 2017-04-14 2018-04-11 炭素原子間の不飽和結合によるプラズマ硬化性化合物を含む段差基板被覆膜形成組成物

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2023076776A Division JP7601942B2 (ja) 2017-04-14 2023-05-08 炭素原子間の不飽和結合によるプラズマ硬化性化合物を含む段差基板被覆膜形成組成物

Publications (2)

Publication Number Publication Date
JPWO2018190380A1 JPWO2018190380A1 (ja) 2020-02-20
JP7332982B2 true JP7332982B2 (ja) 2023-08-24

Family

ID=63793449

Family Applications (4)

Application Number Title Priority Date Filing Date
JP2019512557A Active JP7332982B2 (ja) 2017-04-14 2018-04-11 炭素原子間の不飽和結合によるプラズマ硬化性化合物を含む段差基板被覆膜形成組成物
JP2023076776A Active JP7601942B2 (ja) 2017-04-14 2023-05-08 炭素原子間の不飽和結合によるプラズマ硬化性化合物を含む段差基板被覆膜形成組成物
JP2024189328A Pending JP2025016600A (ja) 2017-04-14 2024-10-28 レジスト下層膜形成組成物
JP2024189320A Pending JP2025028836A (ja) 2017-04-14 2024-10-28 レジスト下層膜形成組成物

Family Applications After (3)

Application Number Title Priority Date Filing Date
JP2023076776A Active JP7601942B2 (ja) 2017-04-14 2023-05-08 炭素原子間の不飽和結合によるプラズマ硬化性化合物を含む段差基板被覆膜形成組成物
JP2024189328A Pending JP2025016600A (ja) 2017-04-14 2024-10-28 レジスト下層膜形成組成物
JP2024189320A Pending JP2025028836A (ja) 2017-04-14 2024-10-28 レジスト下層膜形成組成物

Country Status (6)

Country Link
US (1) US11385546B2 (https=)
JP (4) JP7332982B2 (https=)
KR (3) KR20240119168A (https=)
CN (1) CN110546568B (https=)
TW (2) TWI898931B (https=)
WO (1) WO2018190380A1 (https=)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113544586B (zh) * 2019-03-12 2025-12-19 日产化学株式会社 抗蚀剂下层膜形成用组合物
KR20250136439A (ko) * 2019-04-26 2025-09-16 메르크 파텐트 게엠베하 경화막의 제조방법 및 이의 용도
JP2020183506A (ja) * 2019-04-26 2020-11-12 メルク、パテント、ゲゼルシャフト、ミット、ベシュレンクテル、ハフツングＭｅｒｃｋ Ｐａｔｅｎｔ ＧｍｂＨ 硬化膜の製造方法、およびその使用
WO2021070775A1 (ja) * 2019-10-09 2021-04-15 日産化学株式会社 レジスト下層膜形成組成物
JP7316237B2 (ja) 2020-03-02 2023-07-27 信越化学工業株式会社 有機膜形成材料、有機膜形成方法、パターン形成方法及び化合物
JPWO2023033094A1 (https=) 2021-09-02 2023-03-09
TW202337929A (zh) 2021-11-15 2023-10-01 日商日產化學股份有限公司 多環芳香族烴系光硬化性樹脂組成物
WO2023162968A1 (ja) 2022-02-22 2023-08-31 日産化学株式会社 自己架橋性ポリマーを含む光硬化性樹脂組成物
EP4492142A4 (en) 2022-03-10 2026-03-18 Nissan Chemical Corp Wafer edge protective film-forming composition for semiconductor manufacturing
KR20240026598A (ko) 2022-08-22 2024-02-29 현대모비스 주식회사 최적화된 부품 배치를 갖는 dmd 헤드램프 및 이를 포함하는 이동체
EP4435516A1 (en) * 2023-03-16 2024-09-25 Shin-Etsu Chemical Co., Ltd. Method for forming resist underlayer film and patterning process
JP2025010495A (ja) 2023-07-07 2025-01-21 信越化学工業株式会社 レジスト下層膜形成方法及びパターン形成方法
WO2025127018A1 (ja) * 2023-12-11 2025-06-19 日産化学株式会社 レジスト下層膜形成用組成物
WO2026048760A1 (ja) * 2024-08-30 2026-03-05 日産化学株式会社 レジスト下層膜形成用組成物

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007078890A (ja) 2005-09-12 2007-03-29 Fujifilm Corp 感光性組成物、パターン形成材料、感光性積層体、並びにパターン形成装置及びパターン形成方法
WO2010061774A1 (ja) 2008-11-27 2010-06-03 日産化学工業株式会社 アウトガス発生が低減されたレジスト下層膜形成組成物
JP2012186373A (ja) 2011-03-07 2012-09-27 Panasonic Corp Ｅｕｖマスクブランクスの検査方法、ｅｕｖフォトマスクの製造方法、及びパターン形成方法
WO2013022099A1 (ja) 2011-08-10 2013-02-14 日産化学工業株式会社 スルホン構造を有するシリコン含有レジスト下層膜形成組成物

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2002083415A1 (en) 2001-04-17 2002-10-24 Brewer Science, Inc. Anti-reflective coating composition with improved spin bowl compatibility
CA2392980A1 (en) 2002-07-11 2004-01-11 Lifescan, Inc. Electrochemical test strip having a plurality of reaction chambers and methods for using the same
CN102621814A (zh) 2005-04-19 2012-08-01 日产化学工业株式会社 用于形成光交联固化的抗蚀剂下层膜的抗蚀剂下层膜形成组合物
KR101436336B1 (ko) 2005-12-06 2014-09-01 닛산 가가쿠 고교 가부시키 가이샤 광가교 경화의 레지스트 하층막을 형성하기 위한 규소 함유레지스트 하층막 형성 조성물
WO2008047638A1 (en) 2006-10-12 2008-04-24 Nissan Chemical Industries, Ltd. Process for semiconductor device production using under-resist film cured by photocrosslinking
JP5158381B2 (ja) 2007-07-11 2013-03-06 日産化学工業株式会社 レジスト下層膜形成組成物及びそれを用いたレジストパターンの形成方法
SG11201606648QA (en) * 2014-02-12 2016-09-29 Nissan Chemical Ind Ltd Film-forming composition including fluorine-containing surfactant
JP6394926B2 (ja) * 2014-03-26 2018-09-26 日産化学株式会社 添加剤及び該添加剤を含むレジスト下層膜形成組成物
JP6404757B2 (ja) 2015-03-27 2018-10-17 信越化学工業株式会社 レジスト下層膜材料用重合体、レジスト下層膜材料、及びパターン形成方法
KR102460271B1 (ko) * 2015-04-03 2022-10-28 닛산 가가쿠 가부시키가이샤 광가교기를 가지는 단차 기판 피복 조성물
JP6372887B2 (ja) * 2015-05-14 2018-08-15 信越化学工業株式会社 有機膜材料、有機膜形成方法、パターン形成方法、及び化合物
JP6714492B2 (ja) * 2015-12-24 2020-06-24 信越化学工業株式会社 有機膜形成用化合物、有機膜形成用組成物、有機膜形成方法、及びパターン形成方法
WO2017154921A1 (ja) * 2016-03-10 2017-09-14 日産化学工業株式会社 炭素原子間の不飽和結合による光架橋基を有する化合物を含む段差基板被覆組成物

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007078890A (ja) 2005-09-12 2007-03-29 Fujifilm Corp 感光性組成物、パターン形成材料、感光性積層体、並びにパターン形成装置及びパターン形成方法
WO2010061774A1 (ja) 2008-11-27 2010-06-03 日産化学工業株式会社 アウトガス発生が低減されたレジスト下層膜形成組成物
JP2012186373A (ja) 2011-03-07 2012-09-27 Panasonic Corp Ｅｕｖマスクブランクスの検査方法、ｅｕｖフォトマスクの製造方法、及びパターン形成方法
WO2013022099A1 (ja) 2011-08-10 2013-02-14 日産化学工業株式会社 スルホン構造を有するシリコン含有レジスト下層膜形成組成物

Also Published As

Publication number Publication date
TWI857936B (zh) 2024-10-11
JP7601942B2 (ja) 2024-12-17
JP2023109817A (ja) 2023-08-08
CN110546568B (zh) 2023-10-24
US11385546B2 (en) 2022-07-12
JP2025028836A (ja) 2025-03-05
KR20230148380A (ko) 2023-10-24
KR102690024B1 (ko) 2024-08-05
TW202509653A (zh) 2025-03-01
WO2018190380A1 (ja) 2018-10-18
TWI898931B (zh) 2025-09-21
JP2025041670A (ja) 2025-03-26
KR20240119168A (ko) 2024-08-06
KR20190137845A (ko) 2019-12-11
JP2025016600A (ja) 2025-02-04
KR102593861B1 (ko) 2023-10-26
CN110546568A (zh) 2019-12-06
TW201903045A (zh) 2019-01-16
JPWO2018190380A1 (ja) 2020-02-20
US20200124966A1 (en) 2020-04-23

Similar Documents

Publication Publication Date Title
JP7601942B2 (ja) 炭素原子間の不飽和結合によるプラズマ硬化性化合物を含む段差基板被覆膜形成組成物
KR102460271B1 (ko) 광가교기를 가지는 단차 기판 피복 조성물
KR102327778B1 (ko) 탄소원자간의 불포화결합에 의한 광가교기를 갖는 화합물을 포함하는 단차기판 피복 조성물
JP7616518B2 (ja) 光架橋基を有するポリエーテル樹脂を含む段差基板被覆組成物
JP2023072048A (ja) 硬化性官能基を有する化合物を含む段差基板被覆組成物
JP7208591B2 (ja) 架橋性化合物を含有する光硬化性段差基板被覆組成物
JP7853654B2 (ja) 炭素原子間の不飽和結合によるプラズマ硬化性化合物を含む段差基板被覆膜形成組成物

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20201214

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20220105

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20220228

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20220420

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20220817

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20221017

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20221128

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20230329

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20230508

A911 Transfer to examiner for re-examination before appeal (zenchi)

Free format text: JAPANESE INTERMEDIATE CODE: A911

Effective date: 20230516

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20230712

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20230725

R151 Written notification of patent or utility model registration

Ref document number: 7332982

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R151

R157 Certificate of patent or utility model (correction)

Free format text: JAPANESE INTERMEDIATE CODE: R157