KR20240119168A - 레지스트 하층막 형성 조성물 - Google Patents

레지스트 하층막 형성 조성물 Download PDF

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Publication number
KR20240119168A
KR20240119168A KR1020247025010A KR20247025010A KR20240119168A KR 20240119168 A KR20240119168 A KR 20240119168A KR 1020247025010 A KR1020247025010 A KR 1020247025010A KR 20247025010 A KR20247025010 A KR 20247025010A KR 20240119168 A KR20240119168 A KR 20240119168A
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KR
South Korea
Prior art keywords
group
compound
carbon atoms
underlayer film
unsaturated bond
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Pending
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KR1020247025010A
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English (en)
Korean (ko)
Inventor
타카후미 엔도
히카루 토쿠나가
케이스케 하시모토
리키마루 사카모토
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닛산 가가쿠 가부시키가이샤
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Application filed by 닛산 가가쿠 가부시키가이샤 filed Critical 닛산 가가쿠 가부시키가이샤
Publication of KR20240119168A publication Critical patent/KR20240119168A/ko
Pending legal-status Critical Current

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/094—Multilayer resist systems, e.g. planarising layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
    • C08G59/14—Polycondensates modified by chemical after-treatment
    • C08G59/1433—Polycondensates modified by chemical after-treatment with organic low-molecular-weight compounds
    • C08G59/1438—Polycondensates modified by chemical after-treatment with organic low-molecular-weight compounds containing oxygen
    • C08G59/1455—Monocarboxylic acids, anhydrides, halides, or low-molecular-weight esters thereof
    • C08G59/1461—Unsaturated monoacids
    • C08G59/1466—Acrylic or methacrylic acids
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/80—Etching
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/025—Non-macromolecular photopolymerisable compounds having carbon-to-carbon triple bonds, e.g. acetylenic compounds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • G03F7/167—Coating processes; Apparatus therefor from the gas phase, by plasma deposition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • G03F7/168—Finishing the coated layer, e.g. drying, baking, soaking
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/22—Exposing sequentially with the same light pattern different positions of the same surface
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/38—Treatment before imagewise removal, e.g. prebaking
    • H01L21/027—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/08—Planarisation of organic insulating materials

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Materials For Photolithography (AREA)
  • Epoxy Resins (AREA)
  • Paints Or Removers (AREA)
  • Other Resins Obtained By Reactions Not Involving Carbon-To-Carbon Unsaturated Bonds (AREA)
  • Polymerisation Methods In General (AREA)
  • Chemical & Material Sciences (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Drying Of Semiconductors (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Health & Medical Sciences (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
  • Emergency Medicine (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Formation Of Insulating Films (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)
  • Laminated Bodies (AREA)
KR1020247025010A 2017-04-14 2018-04-11 레지스트 하층막 형성 조성물 Pending KR20240119168A (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JPJP-P-2017-080826 2017-04-14
JP2017080826 2017-04-14
PCT/JP2018/015268 WO2018190380A1 (ja) 2017-04-14 2018-04-11 炭素原子間の不飽和結合によるプラズマ硬化性化合物を含む段差基板被覆膜形成組成物
KR1020237034515A KR102690024B1 (ko) 2017-04-14 2018-04-11 탄소원자간의 불포화결합에 의한 플라즈마 경화성 화합물을 포함하는 단차기판 피복막 형성 조성물

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
KR1020237034515A Division KR102690024B1 (ko) 2017-04-14 2018-04-11 탄소원자간의 불포화결합에 의한 플라즈마 경화성 화합물을 포함하는 단차기판 피복막 형성 조성물

Publications (1)

Publication Number Publication Date
KR20240119168A true KR20240119168A (ko) 2024-08-06

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ID=63793449

Family Applications (3)

Application Number Title Priority Date Filing Date
KR1020247025010A Pending KR20240119168A (ko) 2017-04-14 2018-04-11 레지스트 하층막 형성 조성물
KR1020197032358A Active KR102593861B1 (ko) 2017-04-14 2018-04-11 탄소원자간의 불포화결합에 의한 플라즈마 경화성 화합물을 포함하는 단차기판 피복막 형성 조성물
KR1020237034515A Active KR102690024B1 (ko) 2017-04-14 2018-04-11 탄소원자간의 불포화결합에 의한 플라즈마 경화성 화합물을 포함하는 단차기판 피복막 형성 조성물

Family Applications After (2)

Application Number Title Priority Date Filing Date
KR1020197032358A Active KR102593861B1 (ko) 2017-04-14 2018-04-11 탄소원자간의 불포화결합에 의한 플라즈마 경화성 화합물을 포함하는 단차기판 피복막 형성 조성물
KR1020237034515A Active KR102690024B1 (ko) 2017-04-14 2018-04-11 탄소원자간의 불포화결합에 의한 플라즈마 경화성 화합물을 포함하는 단차기판 피복막 형성 조성물

Country Status (6)

Country Link
US (1) US11385546B2 (https=)
JP (4) JP7332982B2 (https=)
KR (3) KR20240119168A (https=)
CN (1) CN110546568B (https=)
TW (2) TWI898931B (https=)
WO (1) WO2018190380A1 (https=)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113544586B (zh) * 2019-03-12 2025-12-19 日产化学株式会社 抗蚀剂下层膜形成用组合物
KR20250136439A (ko) * 2019-04-26 2025-09-16 메르크 파텐트 게엠베하 경화막의 제조방법 및 이의 용도
JP2020183506A (ja) * 2019-04-26 2020-11-12 メルク、パテント、ゲゼルシャフト、ミット、ベシュレンクテル、ハフツングＭｅｒｃｋ Ｐａｔｅｎｔ ＧｍｂＨ 硬化膜の製造方法、およびその使用
WO2021070775A1 (ja) * 2019-10-09 2021-04-15 日産化学株式会社 レジスト下層膜形成組成物
JP7316237B2 (ja) 2020-03-02 2023-07-27 信越化学工業株式会社 有機膜形成材料、有機膜形成方法、パターン形成方法及び化合物
JPWO2023033094A1 (https=) 2021-09-02 2023-03-09
TW202337929A (zh) 2021-11-15 2023-10-01 日商日產化學股份有限公司 多環芳香族烴系光硬化性樹脂組成物
WO2023162968A1 (ja) 2022-02-22 2023-08-31 日産化学株式会社 自己架橋性ポリマーを含む光硬化性樹脂組成物
EP4492142A4 (en) 2022-03-10 2026-03-18 Nissan Chemical Corp Wafer edge protective film-forming composition for semiconductor manufacturing
KR20240026598A (ko) 2022-08-22 2024-02-29 현대모비스 주식회사 최적화된 부품 배치를 갖는 dmd 헤드램프 및 이를 포함하는 이동체
EP4435516A1 (en) * 2023-03-16 2024-09-25 Shin-Etsu Chemical Co., Ltd. Method for forming resist underlayer film and patterning process
JP2025010495A (ja) 2023-07-07 2025-01-21 信越化学工業株式会社 レジスト下層膜形成方法及びパターン形成方法
WO2025127018A1 (ja) * 2023-12-11 2025-06-19 日産化学株式会社 レジスト下層膜形成用組成物
WO2026048760A1 (ja) * 2024-08-30 2026-03-05 日産化学株式会社 レジスト下層膜形成用組成物

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004053363A (ja) 2002-07-11 2004-02-19 Lifescan Inc 複数の反応チャンバーを有する電気化学的試験片およびその使用方法
WO2006115044A1 (ja) 2005-04-19 2006-11-02 Nissan Chemical Industries, Ltd. 光架橋硬化のレジスト下層膜を形成するためのレジスト下層膜形成組成物
WO2007066597A1 (ja) 2005-12-06 2007-06-14 Nissan Chemical Industries, Ltd. 光架橋硬化のレジスト下層膜を形成するためのケイ素含有レジスト下層膜形成組成物
WO2008047638A1 (en) 2006-10-12 2008-04-24 Nissan Chemical Industries, Ltd. Process for semiconductor device production using under-resist film cured by photocrosslinking
WO2009008446A1 (ja) 2007-07-11 2009-01-15 Nissan Chemical Industries, Ltd. レジスト下層膜形成組成物及びそれを用いたレジストパターンの形成方法

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2002083415A1 (en) 2001-04-17 2002-10-24 Brewer Science, Inc. Anti-reflective coating composition with improved spin bowl compatibility
JP2007078890A (ja) * 2005-09-12 2007-03-29 Fujifilm Corp 感光性組成物、パターン形成材料、感光性積層体、並びにパターン形成装置及びパターン形成方法
KR101766796B1 (ko) * 2008-11-27 2017-08-09 닛산 가가쿠 고교 가부시키 가이샤 아웃가스 발생이 저감된 레지스트 하층막 형성 조성물
JP2012186373A (ja) 2011-03-07 2012-09-27 Panasonic Corp Ｅｕｖマスクブランクスの検査方法、ｅｕｖフォトマスクの製造方法、及びパターン形成方法
TWI618985B (zh) * 2011-08-10 2018-03-21 日產化學工業股份有限公司 具有碸構造之含矽阻劑底層膜形成組成物
SG11201606648QA (en) * 2014-02-12 2016-09-29 Nissan Chemical Ind Ltd Film-forming composition including fluorine-containing surfactant
JP6394926B2 (ja) * 2014-03-26 2018-09-26 日産化学株式会社 添加剤及び該添加剤を含むレジスト下層膜形成組成物
JP6404757B2 (ja) 2015-03-27 2018-10-17 信越化学工業株式会社 レジスト下層膜材料用重合体、レジスト下層膜材料、及びパターン形成方法
KR102460271B1 (ko) * 2015-04-03 2022-10-28 닛산 가가쿠 가부시키가이샤 광가교기를 가지는 단차 기판 피복 조성물
JP6372887B2 (ja) * 2015-05-14 2018-08-15 信越化学工業株式会社 有機膜材料、有機膜形成方法、パターン形成方法、及び化合物
JP6714492B2 (ja) * 2015-12-24 2020-06-24 信越化学工業株式会社 有機膜形成用化合物、有機膜形成用組成物、有機膜形成方法、及びパターン形成方法
WO2017154921A1 (ja) * 2016-03-10 2017-09-14 日産化学工業株式会社 炭素原子間の不飽和結合による光架橋基を有する化合物を含む段差基板被覆組成物

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004053363A (ja) 2002-07-11 2004-02-19 Lifescan Inc 複数の反応チャンバーを有する電気化学的試験片およびその使用方法
WO2006115044A1 (ja) 2005-04-19 2006-11-02 Nissan Chemical Industries, Ltd. 光架橋硬化のレジスト下層膜を形成するためのレジスト下層膜形成組成物
WO2007066597A1 (ja) 2005-12-06 2007-06-14 Nissan Chemical Industries, Ltd. 光架橋硬化のレジスト下層膜を形成するためのケイ素含有レジスト下層膜形成組成物
WO2008047638A1 (en) 2006-10-12 2008-04-24 Nissan Chemical Industries, Ltd. Process for semiconductor device production using under-resist film cured by photocrosslinking
WO2009008446A1 (ja) 2007-07-11 2009-01-15 Nissan Chemical Industries, Ltd. レジスト下層膜形成組成物及びそれを用いたレジストパターンの形成方法

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WO2018190380A1 (ja) 2018-10-18
TWI898931B (zh) 2025-09-21
JP2025041670A (ja) 2025-03-26
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JP2025016600A (ja) 2025-02-04
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