JPWO2020255984A5 - - Google Patents

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Publication number
JPWO2020255984A5
JPWO2020255984A5 JP2021526818A JP2021526818A JPWO2020255984A5 JP WO2020255984 A5 JPWO2020255984 A5 JP WO2020255984A5 JP 2021526818 A JP2021526818 A JP 2021526818A JP 2021526818 A JP2021526818 A JP 2021526818A JP WO2020255984 A5 JPWO2020255984 A5 JP WO2020255984A5
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JP
Japan
Prior art keywords
group
underlayer film
resist underlayer
forming
resist
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JP2021526818A
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English (en)
Japanese (ja)
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JP7327479B2 (ja
JPWO2020255984A1 (https=
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Priority claimed from PCT/JP2020/023670 external-priority patent/WO2020255984A1/ja
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JP2021526818A 2019-06-17 2020-06-17 ジシアノスチリル基を有する複素環化合物を含むウェットエッチング可能なレジスト下層膜形成組成物 Active JP7327479B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2019111915 2019-06-17
JP2019111915 2019-06-17
PCT/JP2020/023670 WO2020255984A1 (ja) 2019-06-17 2020-06-17 ジシアノスチリル基を有する複素環化合物を含むウェットエッチング可能なレジスト下層膜形成組成物

Publications (3)

Publication Number Publication Date
JPWO2020255984A1 JPWO2020255984A1 (https=) 2020-12-24
JPWO2020255984A5 true JPWO2020255984A5 (https=) 2023-06-02
JP7327479B2 JP7327479B2 (ja) 2023-08-16

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JP2021526818A Active JP7327479B2 (ja) 2019-06-17 2020-06-17 ジシアノスチリル基を有する複素環化合物を含むウェットエッチング可能なレジスト下層膜形成組成物

Country Status (6)

Country Link
US (1) US12366804B2 (https=)
JP (1) JP7327479B2 (https=)
KR (1) KR102808973B1 (https=)
CN (1) CN113994261B (https=)
TW (1) TWI843863B (https=)
WO (1) WO2020255984A1 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113994263B (zh) * 2019-06-17 2024-08-16 日产化学株式会社 包含二氰基苯乙烯基的能够湿蚀刻的抗蚀剂下层膜形成用组合物
CN117178231A (zh) * 2021-04-26 2023-12-05 日产化学株式会社 抗蚀剂图案形成方法
US20260008934A1 (en) * 2022-08-29 2026-01-08 Nissan Chemical Corporation Composition for forming gap-filling material

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
MX169489B (es) * 1987-12-28 1993-07-07 Sumitomo Chemical Co Procedimiento para preparar compuestos de estirilo
US5693691A (en) 1995-08-21 1997-12-02 Brewer Science, Inc. Thermosetting anti-reflective coatings compositions
US6872506B2 (en) * 2002-06-25 2005-03-29 Brewer Science Inc. Wet-developable anti-reflective compositions
EP1762895B1 (en) * 2005-08-29 2016-02-24 Rohm and Haas Electronic Materials, L.L.C. Antireflective Hard Mask Compositions
AU2009210562B2 (en) 2008-02-08 2011-04-28 3M Innovative Properties Company Multi-layer intumescent fire protection barrier with adhesive surface
JP5255297B2 (ja) * 2008-02-28 2013-08-07 富士フイルム株式会社 フォトレジスト液、およびこれを用いるエッチング方法
JP5040839B2 (ja) * 2008-07-18 2012-10-03 Jsr株式会社 レジスト下層膜形成組成物
US8632948B2 (en) * 2009-09-30 2014-01-21 Az Electronic Materials Usa Corp. Positive-working photoimageable bottom antireflective coating
US8465902B2 (en) * 2011-02-08 2013-06-18 Az Electronic Materials Usa Corp. Underlayer coating composition and processes thereof
KR102413357B1 (ko) * 2014-08-08 2022-06-27 미쯔비시 가스 케미칼 컴파니, 인코포레이티드 리소그래피용 하층막 형성용 조성물, 리소그래피용 하층막 및 패턴형성방법
US11500291B2 (en) 2017-10-31 2022-11-15 Rohm And Haas Electronic Materials Korea Ltd. Underlying coating compositions for use with photoresists
WO2019098338A1 (ja) 2017-11-20 2019-05-23 三菱瓦斯化学株式会社 リソグラフィー用膜形成用組成物、リソグラフィー用膜、レジストパターン形成方法、及び回路パターン形成方法

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