CN113994261B - 包含具有二氰基苯乙烯基的杂环化合物的能够湿蚀刻的抗蚀剂下层膜形成用组合物 - Google Patents

包含具有二氰基苯乙烯基的杂环化合物的能够湿蚀刻的抗蚀剂下层膜形成用组合物

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Publication number
CN113994261B
CN113994261B CN202080044302.2A CN202080044302A CN113994261B CN 113994261 B CN113994261 B CN 113994261B CN 202080044302 A CN202080044302 A CN 202080044302A CN 113994261 B CN113994261 B CN 113994261B
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CN
China
Prior art keywords
group
underlayer film
resist underlayer
resist
formula
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CN202080044302.2A
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English (en)
Chinese (zh)
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CN113994261A (zh
Inventor
远藤贵文
远藤勇树
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Nissan Chemical Corp
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Nissan Chemical Corp
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07D—HETEROCYCLIC COMPOUNDS
    • C07D251/00—Heterocyclic compounds containing 1,3,5-triazine rings
    • C07D251/02—Heterocyclic compounds containing 1,3,5-triazine rings not condensed with other rings
    • C07D251/12—Heterocyclic compounds containing 1,3,5-triazine rings not condensed with other rings having three double bonds between ring members or between ring members and non-ring members
    • C07D251/26—Heterocyclic compounds containing 1,3,5-triazine rings not condensed with other rings having three double bonds between ring members or between ring members and non-ring members with only hetero atoms directly attached to ring carbon atoms
    • C07D251/30—Only oxygen atoms
    • C07D251/34—Cyanuric or isocyanuric esters
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/36—Imagewise removal not covered by groups G03F7/30 - G03F7/34, e.g. using gas streams, using plasma
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Materials For Photolithography (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
CN202080044302.2A 2019-06-17 2020-06-17 包含具有二氰基苯乙烯基的杂环化合物的能够湿蚀刻的抗蚀剂下层膜形成用组合物 Active CN113994261B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2019-111915 2019-06-17
JP2019111915 2019-06-17
PCT/JP2020/023670 WO2020255984A1 (ja) 2019-06-17 2020-06-17 ジシアノスチリル基を有する複素環化合物を含むウェットエッチング可能なレジスト下層膜形成組成物

Publications (2)

Publication Number Publication Date
CN113994261A CN113994261A (zh) 2022-01-28
CN113994261B true CN113994261B (zh) 2025-11-11

Family

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Family Applications (1)

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CN202080044302.2A Active CN113994261B (zh) 2019-06-17 2020-06-17 包含具有二氰基苯乙烯基的杂环化合物的能够湿蚀刻的抗蚀剂下层膜形成用组合物

Country Status (6)

Country Link
US (1) US12366804B2 (https=)
JP (1) JP7327479B2 (https=)
KR (1) KR102808973B1 (https=)
CN (1) CN113994261B (https=)
TW (1) TWI843863B (https=)
WO (1) WO2020255984A1 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113994263B (zh) * 2019-06-17 2024-08-16 日产化学株式会社 包含二氰基苯乙烯基的能够湿蚀刻的抗蚀剂下层膜形成用组合物
CN117178231A (zh) * 2021-04-26 2023-12-05 日产化学株式会社 抗蚀剂图案形成方法
US20260008934A1 (en) * 2022-08-29 2026-01-08 Nissan Chemical Corporation Composition for forming gap-filling material

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5218136A (en) * 1987-12-28 1993-06-08 Sumitomo Chemical Company, Limited Styryl compounds, process for preparing the same and photoresist compositions comprising the same
TW200408685A (en) * 2002-06-25 2004-06-01 Brewer Science Inc Wet-developable anti-reflective compositions
CN109725492A (zh) * 2017-10-31 2019-05-07 罗门哈斯电子材料韩国有限公司 与光致抗蚀剂一起使用的下层涂料组合物
WO2019098338A1 (ja) * 2017-11-20 2019-05-23 三菱瓦斯化学株式会社 リソグラフィー用膜形成用組成物、リソグラフィー用膜、レジストパターン形成方法、及び回路パターン形成方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5693691A (en) 1995-08-21 1997-12-02 Brewer Science, Inc. Thermosetting anti-reflective coatings compositions
EP1762895B1 (en) * 2005-08-29 2016-02-24 Rohm and Haas Electronic Materials, L.L.C. Antireflective Hard Mask Compositions
AU2009210562B2 (en) 2008-02-08 2011-04-28 3M Innovative Properties Company Multi-layer intumescent fire protection barrier with adhesive surface
JP5255297B2 (ja) * 2008-02-28 2013-08-07 富士フイルム株式会社 フォトレジスト液、およびこれを用いるエッチング方法
JP5040839B2 (ja) * 2008-07-18 2012-10-03 Ｊｓｒ株式会社 レジスト下層膜形成組成物
US8632948B2 (en) * 2009-09-30 2014-01-21 Az Electronic Materials Usa Corp. Positive-working photoimageable bottom antireflective coating
US8465902B2 (en) * 2011-02-08 2013-06-18 Az Electronic Materials Usa Corp. Underlayer coating composition and processes thereof
KR102413357B1 (ko) * 2014-08-08 2022-06-27 미쯔비시 가스 케미칼 컴파니, 인코포레이티드 리소그래피용 하층막 형성용 조성물, 리소그래피용 하층막 및 패턴형성방법

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5218136A (en) * 1987-12-28 1993-06-08 Sumitomo Chemical Company, Limited Styryl compounds, process for preparing the same and photoresist compositions comprising the same
TW200408685A (en) * 2002-06-25 2004-06-01 Brewer Science Inc Wet-developable anti-reflective compositions
CN109725492A (zh) * 2017-10-31 2019-05-07 罗门哈斯电子材料韩国有限公司 与光致抗蚀剂一起使用的下层涂料组合物
WO2019098338A1 (ja) * 2017-11-20 2019-05-23 三菱瓦斯化学株式会社 リソグラフィー用膜形成用組成物、リソグラフィー用膜、レジストパターン形成方法、及び回路パターン形成方法

Also Published As

Publication number Publication date
TW202113487A (zh) 2021-04-01
CN113994261A (zh) 2022-01-28
TWI843863B (zh) 2024-06-01
KR102808973B1 (ko) 2025-05-16
JP7327479B2 (ja) 2023-08-16
US12366804B2 (en) 2025-07-22
US20220319839A1 (en) 2022-10-06
KR20220024079A (ko) 2022-03-03
JPWO2020255984A1 (https=) 2020-12-24
WO2020255984A1 (ja) 2020-12-24

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