KR102808973B1 - 디시아노스티릴기를 갖는 복소환 화합물을 포함하는 웨트에칭가능한 레지스트 하층막 형성 조성물 - Google Patents

디시아노스티릴기를 갖는 복소환 화합물을 포함하는 웨트에칭가능한 레지스트 하층막 형성 조성물 Download PDF

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KR102808973B1
KR102808973B1 KR1020217041384A KR20217041384A KR102808973B1 KR 102808973 B1 KR102808973 B1 KR 102808973B1 KR 1020217041384 A KR1020217041384 A KR 1020217041384A KR 20217041384 A KR20217041384 A KR 20217041384A KR 102808973 B1 KR102808973 B1 KR 102808973B1
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group
resist
underlayer film
resist underlayer
film
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KR20220024079A (ko
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타카후미 엔도
유키 엔도
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닛산 가가쿠 가부시키가이샤
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07D—HETEROCYCLIC COMPOUNDS
    • C07D251/00—Heterocyclic compounds containing 1,3,5-triazine rings
    • C07D251/02—Heterocyclic compounds containing 1,3,5-triazine rings not condensed with other rings
    • C07D251/12—Heterocyclic compounds containing 1,3,5-triazine rings not condensed with other rings having three double bonds between ring members or between ring members and non-ring members
    • C07D251/26—Heterocyclic compounds containing 1,3,5-triazine rings not condensed with other rings having three double bonds between ring members or between ring members and non-ring members with only hetero atoms directly attached to ring carbon atoms
    • C07D251/30—Only oxygen atoms
    • C07D251/34—Cyanuric or isocyanuric esters
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/36—Imagewise removal not covered by groups G03F7/30 - G03F7/34, e.g. using gas streams, using plasma
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • H01L21/0274—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Materials For Photolithography (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
KR1020217041384A 2019-06-17 2020-06-17 디시아노스티릴기를 갖는 복소환 화합물을 포함하는 웨트에칭가능한 레지스트 하층막 형성 조성물 Active KR102808973B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JPJP-P-2019-111915 2019-06-17
JP2019111915 2019-06-17
PCT/JP2020/023670 WO2020255984A1 (ja) 2019-06-17 2020-06-17 ジシアノスチリル基を有する複素環化合物を含むウェットエッチング可能なレジスト下層膜形成組成物

Publications (2)

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KR20220024079A KR20220024079A (ko) 2022-03-03
KR102808973B1 true KR102808973B1 (ko) 2025-05-16

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KR1020217041384A Active KR102808973B1 (ko) 2019-06-17 2020-06-17 디시아노스티릴기를 갖는 복소환 화합물을 포함하는 웨트에칭가능한 레지스트 하층막 형성 조성물

Country Status (6)

Country Link
US (1) US12366804B2 (https=)
JP (1) JP7327479B2 (https=)
KR (1) KR102808973B1 (https=)
CN (1) CN113994261B (https=)
TW (1) TWI843863B (https=)
WO (1) WO2020255984A1 (https=)

Families Citing this family (3)

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Publication number Priority date Publication date Assignee Title
CN113994263B (zh) * 2019-06-17 2024-08-16 日产化学株式会社 包含二氰基苯乙烯基的能够湿蚀刻的抗蚀剂下层膜形成用组合物
CN117178231A (zh) * 2021-04-26 2023-12-05 日产化学株式会社 抗蚀剂图案形成方法
US20260008934A1 (en) * 2022-08-29 2026-01-08 Nissan Chemical Corporation Composition for forming gap-filling material

Citations (4)

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Publication number Priority date Publication date Assignee Title
JP2006508377A (ja) * 2002-06-25 2006-03-09 ブルーワー サイエンス アイ エヌ シー． 湿式現像可能な反射防止組成物
JP2009204985A (ja) 2008-02-28 2009-09-10 Fujifilm Corp フォトレジスト用化合物、フォトレジスト液、およびこれを用いるエッチング方法
WO2019098338A1 (ja) 2017-11-20 2019-05-23 三菱瓦斯化学株式会社 リソグラフィー用膜形成用組成物、リソグラフィー用膜、レジストパターン形成方法、及び回路パターン形成方法
JP2019082682A (ja) 2017-10-31 2019-05-30 ローム・アンド・ハース・エレクトロニック・マテリアルズ・コリア・リミテッド フォトレジストと共に使用するための下地コーティング組成物

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MX169489B (es) * 1987-12-28 1993-07-07 Sumitomo Chemical Co Procedimiento para preparar compuestos de estirilo
US5693691A (en) 1995-08-21 1997-12-02 Brewer Science, Inc. Thermosetting anti-reflective coatings compositions
EP1762895B1 (en) * 2005-08-29 2016-02-24 Rohm and Haas Electronic Materials, L.L.C. Antireflective Hard Mask Compositions
AU2009210562B2 (en) 2008-02-08 2011-04-28 3M Innovative Properties Company Multi-layer intumescent fire protection barrier with adhesive surface
JP5040839B2 (ja) * 2008-07-18 2012-10-03 Ｊｓｒ株式会社 レジスト下層膜形成組成物
US8632948B2 (en) * 2009-09-30 2014-01-21 Az Electronic Materials Usa Corp. Positive-working photoimageable bottom antireflective coating
US8465902B2 (en) * 2011-02-08 2013-06-18 Az Electronic Materials Usa Corp. Underlayer coating composition and processes thereof
KR102413357B1 (ko) * 2014-08-08 2022-06-27 미쯔비시 가스 케미칼 컴파니, 인코포레이티드 리소그래피용 하층막 형성용 조성물, 리소그래피용 하층막 및 패턴형성방법

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006508377A (ja) * 2002-06-25 2006-03-09 ブルーワー サイエンス アイ エヌ シー． 湿式現像可能な反射防止組成物
JP2009204985A (ja) 2008-02-28 2009-09-10 Fujifilm Corp フォトレジスト用化合物、フォトレジスト液、およびこれを用いるエッチング方法
JP2019082682A (ja) 2017-10-31 2019-05-30 ローム・アンド・ハース・エレクトロニック・マテリアルズ・コリア・リミテッド フォトレジストと共に使用するための下地コーティング組成物
WO2019098338A1 (ja) 2017-11-20 2019-05-23 三菱瓦斯化学株式会社 リソグラフィー用膜形成用組成物、リソグラフィー用膜、レジストパターン形成方法、及び回路パターン形成方法

Also Published As

Publication number Publication date
TW202113487A (zh) 2021-04-01
CN113994261B (zh) 2025-11-11
CN113994261A (zh) 2022-01-28
TWI843863B (zh) 2024-06-01
JP7327479B2 (ja) 2023-08-16
US12366804B2 (en) 2025-07-22
US20220319839A1 (en) 2022-10-06
KR20220024079A (ko) 2022-03-03
JPWO2020255984A1 (https=) 2020-12-24
WO2020255984A1 (ja) 2020-12-24

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