TWI843863B - 含有具二氰基苯乙烯基之雜環化合物之可濕蝕刻之阻劑下層膜形成組成物、經圖案化的基板之製造方法、半導體裝置之製造方法 - Google Patents

含有具二氰基苯乙烯基之雜環化合物之可濕蝕刻之阻劑下層膜形成組成物、經圖案化的基板之製造方法、半導體裝置之製造方法 Download PDF

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Publication number
TWI843863B
TWI843863B TW109120323A TW109120323A TWI843863B TW I843863 B TWI843863 B TW I843863B TW 109120323 A TW109120323 A TW 109120323A TW 109120323 A TW109120323 A TW 109120323A TW I843863 B TWI843863 B TW I843863B
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TW
Taiwan
Prior art keywords
group
underlayer film
resist underlayer
resist
forming composition
Prior art date
Application number
TW109120323A
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English (en)
Chinese (zh)
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TW202113487A (zh
Inventor
遠藤貴文
遠藤勇樹
Original Assignee
日商日產化學股份有限公司
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Publication of TW202113487A publication Critical patent/TW202113487A/zh
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Publication of TWI843863B publication Critical patent/TWI843863B/zh

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07D—HETEROCYCLIC COMPOUNDS
    • C07D251/00—Heterocyclic compounds containing 1,3,5-triazine rings
    • C07D251/02—Heterocyclic compounds containing 1,3,5-triazine rings not condensed with other rings
    • C07D251/12—Heterocyclic compounds containing 1,3,5-triazine rings not condensed with other rings having three double bonds between ring members or between ring members and non-ring members
    • C07D251/26—Heterocyclic compounds containing 1,3,5-triazine rings not condensed with other rings having three double bonds between ring members or between ring members and non-ring members with only hetero atoms directly attached to ring carbon atoms
    • C07D251/30—Only oxygen atoms
    • C07D251/34—Cyanuric or isocyanuric esters
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/36—Imagewise removal not covered by groups G03F7/30 - G03F7/34, e.g. using gas streams, using plasma
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Materials For Photolithography (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
TW109120323A 2019-06-17 2020-06-17 含有具二氰基苯乙烯基之雜環化合物之可濕蝕刻之阻劑下層膜形成組成物、經圖案化的基板之製造方法、半導體裝置之製造方法 TWI843863B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2019-111915 2019-06-17
JP2019111915 2019-06-17

Publications (2)

Publication Number Publication Date
TW202113487A TW202113487A (zh) 2021-04-01
TWI843863B true TWI843863B (zh) 2024-06-01

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
TW109120323A TWI843863B (zh) 2019-06-17 2020-06-17 含有具二氰基苯乙烯基之雜環化合物之可濕蝕刻之阻劑下層膜形成組成物、經圖案化的基板之製造方法、半導體裝置之製造方法

Country Status (6)

Country Link
US (1) US12366804B2 (https=)
JP (1) JP7327479B2 (https=)
KR (1) KR102808973B1 (https=)
CN (1) CN113994261B (https=)
TW (1) TWI843863B (https=)
WO (1) WO2020255984A1 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113994263B (zh) * 2019-06-17 2024-08-16 日产化学株式会社 包含二氰基苯乙烯基的能够湿蚀刻的抗蚀剂下层膜形成用组合物
CN117178231A (zh) * 2021-04-26 2023-12-05 日产化学株式会社 抗蚀剂图案形成方法
US20260008934A1 (en) * 2022-08-29 2026-01-08 Nissan Chemical Corporation Composition for forming gap-filling material

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200408685A (en) * 2002-06-25 2004-06-01 Brewer Science Inc Wet-developable anti-reflective compositions
TW200728924A (en) * 2005-08-29 2007-08-01 Rohm & Haas Elect Mat Antireflective hard mask compositions
TW201009503A (en) * 2008-07-18 2010-03-01 Jsr Corp Underlayer film composition
TW201111913A (en) * 2009-09-30 2011-04-01 Az Electronic Materials Usa Positive-working photoimageable bottom antireflective coating
TW201239047A (en) * 2011-02-08 2012-10-01 Az Electronic Materials Usa Underlayer coating composition and process thereof
TW201623222A (zh) * 2014-08-08 2016-07-01 三菱瓦斯化學股份有限公司 微影所使用下層膜形成用組成物、微影所使用下層膜及圖型形成方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
MX169489B (es) * 1987-12-28 1993-07-07 Sumitomo Chemical Co Procedimiento para preparar compuestos de estirilo
US5693691A (en) 1995-08-21 1997-12-02 Brewer Science, Inc. Thermosetting anti-reflective coatings compositions
AU2009210562B2 (en) 2008-02-08 2011-04-28 3M Innovative Properties Company Multi-layer intumescent fire protection barrier with adhesive surface
JP5255297B2 (ja) * 2008-02-28 2013-08-07 富士フイルム株式会社 フォトレジスト液、およびこれを用いるエッチング方法
US11500291B2 (en) 2017-10-31 2022-11-15 Rohm And Haas Electronic Materials Korea Ltd. Underlying coating compositions for use with photoresists
WO2019098338A1 (ja) 2017-11-20 2019-05-23 三菱瓦斯化学株式会社 リソグラフィー用膜形成用組成物、リソグラフィー用膜、レジストパターン形成方法、及び回路パターン形成方法

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200408685A (en) * 2002-06-25 2004-06-01 Brewer Science Inc Wet-developable anti-reflective compositions
TW200728924A (en) * 2005-08-29 2007-08-01 Rohm & Haas Elect Mat Antireflective hard mask compositions
TW201009503A (en) * 2008-07-18 2010-03-01 Jsr Corp Underlayer film composition
TW201111913A (en) * 2009-09-30 2011-04-01 Az Electronic Materials Usa Positive-working photoimageable bottom antireflective coating
TW201239047A (en) * 2011-02-08 2012-10-01 Az Electronic Materials Usa Underlayer coating composition and process thereof
TW201623222A (zh) * 2014-08-08 2016-07-01 三菱瓦斯化學股份有限公司 微影所使用下層膜形成用組成物、微影所使用下層膜及圖型形成方法

Also Published As

Publication number Publication date
TW202113487A (zh) 2021-04-01
CN113994261B (zh) 2025-11-11
CN113994261A (zh) 2022-01-28
KR102808973B1 (ko) 2025-05-16
JP7327479B2 (ja) 2023-08-16
US12366804B2 (en) 2025-07-22
US20220319839A1 (en) 2022-10-06
KR20220024079A (ko) 2022-03-03
JPWO2020255984A1 (https=) 2020-12-24
WO2020255984A1 (ja) 2020-12-24

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