JP2023042402A5 - - Google Patents
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- JP2023042402A5 JP2023042402A5 JP2021149681A JP2021149681A JP2023042402A5 JP 2023042402 A5 JP2023042402 A5 JP 2023042402A5 JP 2021149681 A JP2021149681 A JP 2021149681A JP 2021149681 A JP2021149681 A JP 2021149681A JP 2023042402 A5 JP2023042402 A5 JP 2023042402A5
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- JP
- Japan
- Prior art keywords
- semiconductor layer
- dummy active
- active trench
- potential
- gate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000004065 semiconductor Substances 0.000 claims description 82
- 239000000758 substrate Substances 0.000 claims description 21
- 239000000463 material Substances 0.000 claims 3
- 229910002601 GaN Inorganic materials 0.000 claims 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 1
- 239000010432 diamond Substances 0.000 claims 1
- 229910003460 diamond Inorganic materials 0.000 claims 1
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 claims 1
- 229910001195 gallium oxide Inorganic materials 0.000 claims 1
- 229910052710 silicon Inorganic materials 0.000 claims 1
- 239000010703 silicon Substances 0.000 claims 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims 1
- 229910010271 silicon carbide Inorganic materials 0.000 claims 1
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 229910000676 Si alloy Inorganic materials 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- CSDREXVUYHZDNP-UHFFFAOYSA-N alumanylidynesilicon Chemical compound [Al].[Si] CSDREXVUYHZDNP-UHFFFAOYSA-N 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 229910021364 Al-Si alloy Inorganic materials 0.000 description 1
- 238000007772 electroless plating Methods 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Images
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2021149681A JP7607538B2 (ja) | 2021-09-14 | 2021-09-14 | 半導体装置 |
| US17/808,894 US20230083162A1 (en) | 2021-09-14 | 2022-06-24 | Semiconductor device |
| DE102022120566.5A DE102022120566A1 (de) | 2021-09-14 | 2022-08-16 | Halbleitervorrichtung |
| CN202211102670.5A CN115810629B (zh) | 2021-09-14 | 2022-09-09 | 半导体装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2021149681A JP7607538B2 (ja) | 2021-09-14 | 2021-09-14 | 半導体装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2023042402A JP2023042402A (ja) | 2023-03-27 |
| JP2023042402A5 true JP2023042402A5 (https=) | 2023-09-26 |
| JP7607538B2 JP7607538B2 (ja) | 2024-12-27 |
Family
ID=85284522
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2021149681A Active JP7607538B2 (ja) | 2021-09-14 | 2021-09-14 | 半導体装置 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US20230083162A1 (https=) |
| JP (1) | JP7607538B2 (https=) |
| CN (1) | CN115810629B (https=) |
| DE (1) | DE102022120566A1 (https=) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPWO2024190920A1 (https=) | 2023-03-16 | 2024-09-19 | ||
| WO2024236880A1 (ja) * | 2023-05-16 | 2024-11-21 | 富士電機株式会社 | 半導体装置 |
| JPWO2025182319A1 (https=) * | 2024-02-29 | 2025-09-04 | ||
| CN119153504B (zh) * | 2024-07-31 | 2025-09-23 | 海信家电集团股份有限公司 | 半导体装置和半导体装置的制造方法 |
Family Cites Families (37)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS54133396A (en) | 1978-04-08 | 1979-10-17 | Toshiba Corp | Method and apparatus for nondestructive measuring |
| US6351018B1 (en) * | 1999-02-26 | 2002-02-26 | Fairchild Semiconductor Corporation | Monolithically integrated trench MOSFET and Schottky diode |
| JP3884206B2 (ja) * | 2000-01-20 | 2007-02-21 | 株式会社東芝 | 半導体装置 |
| JP2002305304A (ja) * | 2001-04-05 | 2002-10-18 | Toshiba Corp | 電力用半導体装置 |
| WO2011080928A1 (ja) * | 2010-01-04 | 2011-07-07 | 株式会社日立製作所 | 半導体装置、及びそれを用いた電力変換装置 |
| WO2011111500A1 (ja) * | 2010-03-09 | 2011-09-15 | 富士電機システムズ株式会社 | 半導体装置 |
| US8716746B2 (en) * | 2010-08-17 | 2014-05-06 | Denso Corporation | Semiconductor device |
| EP2725623B1 (en) * | 2011-09-08 | 2019-10-30 | Fuji Electric Co., Ltd. | Semiconductor device |
| US9337827B2 (en) * | 2013-07-15 | 2016-05-10 | Infineon Technologies Ag | Electronic circuit with a reverse-conducting IGBT and gate driver circuit |
| EP2942816B1 (en) * | 2013-08-15 | 2020-10-28 | Fuji Electric Co., Ltd. | Semiconductor device |
| US9960165B2 (en) * | 2013-11-05 | 2018-05-01 | Toyota Jidosha Kabushiki Kaisha | Semiconductor device having adjacent IGBT and diode regions with a shifted boundary plane between a collector region and a cathode region |
| JP6119577B2 (ja) * | 2013-11-26 | 2017-04-26 | 三菱電機株式会社 | 半導体装置 |
| US9240450B2 (en) * | 2014-02-12 | 2016-01-19 | Infineon Technologies Ag | IGBT with emitter electrode electrically connected with impurity zone |
| US10192977B2 (en) * | 2014-04-21 | 2019-01-29 | Mitsubishi Electric Corporation | Power semiconductor device |
| WO2016027721A1 (ja) * | 2014-08-20 | 2016-02-25 | 富士電機株式会社 | 半導体装置および半導体装置の製造方法 |
| US12021118B2 (en) * | 2015-08-26 | 2024-06-25 | Mitsubishi Electric Corporation | Semiconductor device |
| CN108463888B (zh) * | 2016-01-19 | 2021-03-26 | 三菱电机株式会社 | 半导体装置 |
| JP6414090B2 (ja) * | 2016-01-27 | 2018-10-31 | 株式会社デンソー | 半導体装置 |
| JP6614326B2 (ja) * | 2016-02-15 | 2019-12-04 | 富士電機株式会社 | 半導体装置 |
| JP6565815B2 (ja) * | 2016-07-21 | 2019-08-28 | 株式会社デンソー | 半導体装置 |
| EP3480855B1 (en) * | 2017-02-15 | 2023-09-20 | Fuji Electric Co., Ltd. | Semiconductor device |
| JP6891560B2 (ja) * | 2017-03-15 | 2021-06-18 | 富士電機株式会社 | 半導体装置 |
| WO2019111572A1 (ja) * | 2017-12-06 | 2019-06-13 | 富士電機株式会社 | 半導体装置 |
| JP7067041B2 (ja) * | 2017-12-11 | 2022-05-16 | 株式会社デンソー | 半導体装置 |
| JP6863479B2 (ja) * | 2017-12-14 | 2021-04-21 | 富士電機株式会社 | 半導体装置およびその製造方法 |
| JP7055056B2 (ja) * | 2018-04-24 | 2022-04-15 | 三菱電機株式会社 | 半導体装置および半導体装置の製造方法 |
| JP7024626B2 (ja) * | 2018-06-27 | 2022-02-24 | 三菱電機株式会社 | 半導体装置、半導体装置の製造方法 |
| JP7250473B2 (ja) * | 2018-10-18 | 2023-04-03 | 三菱電機株式会社 | 半導体装置 |
| JP7158317B2 (ja) * | 2019-03-07 | 2022-10-21 | 三菱電機株式会社 | 半導体装置 |
| US11276686B2 (en) * | 2019-05-15 | 2022-03-15 | Fuji Electric Co., Ltd. | Semiconductor device |
| JP7151902B2 (ja) * | 2019-07-31 | 2022-10-12 | 富士電機株式会社 | 半導体装置 |
| JP7353891B2 (ja) * | 2019-09-20 | 2023-10-02 | 株式会社東芝 | 半導体装置及び半導体回路 |
| JP7325301B2 (ja) * | 2019-11-01 | 2023-08-14 | 三菱電機株式会社 | 半導体装置およびその製造方法 |
| JP7330092B2 (ja) * | 2019-12-25 | 2023-08-21 | 三菱電機株式会社 | 半導体装置 |
| JP7331733B2 (ja) * | 2020-02-26 | 2023-08-23 | 三菱電機株式会社 | 半導体装置 |
| JP7442932B2 (ja) * | 2020-03-09 | 2024-03-05 | 三菱電機株式会社 | 半導体装置 |
| JP7447769B2 (ja) * | 2020-11-13 | 2024-03-12 | 三菱電機株式会社 | 半導体素子、半導体装置 |
-
2021
- 2021-09-14 JP JP2021149681A patent/JP7607538B2/ja active Active
-
2022
- 2022-06-24 US US17/808,894 patent/US20230083162A1/en active Pending
- 2022-08-16 DE DE102022120566.5A patent/DE102022120566A1/de active Pending
- 2022-09-09 CN CN202211102670.5A patent/CN115810629B/zh active Active
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