CN115810629B - 半导体装置 - Google Patents

半导体装置

Info

Publication number
CN115810629B
CN115810629B CN202211102670.5A CN202211102670A CN115810629B CN 115810629 B CN115810629 B CN 115810629B CN 202211102670 A CN202211102670 A CN 202211102670A CN 115810629 B CN115810629 B CN 115810629B
Authority
CN
China
Prior art keywords
diode
type
region
gate
active trench
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN202211102670.5A
Other languages
English (en)
Chinese (zh)
Other versions
CN115810629A (zh
Inventor
小西和也
古川彰彦
西康一
藤井秀纪
曾根田真也
小西康雄
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of CN115810629A publication Critical patent/CN115810629A/zh
Application granted granted Critical
Publication of CN115810629B publication Critical patent/CN115810629B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/01—Manufacture or treatment
    • H10D12/031—Manufacture or treatment of IGBTs
    • H10D12/032—Manufacture or treatment of IGBTs of vertical IGBTs
    • H10D12/038—Manufacture or treatment of IGBTs of vertical IGBTs having a recessed gate, e.g. trench-gate IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H10D12/441—Vertical IGBTs
    • H10D12/461—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions
    • H10D12/481—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions having gate structures on slanted surfaces, on vertical surfaces, or in grooves, e.g. trench gate IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H10D62/126—Top-view geometrical layouts of the regions or the junctions
    • H10D62/127—Top-view geometrical layouts of the regions or the junctions of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/129—Cathode regions of diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/141—Anode or cathode regions of thyristors; Collector or emitter regions of gated bipolar-mode devices, e.g. of IGBTs
    • H10D62/142—Anode regions of thyristors or collector regions of gated bipolar-mode devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/141—Anode or cathode regions of thyristors; Collector or emitter regions of gated bipolar-mode devices, e.g. of IGBTs
    • H10D62/145—Emitter regions of IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates
    • H10D64/117—Recessed field plates, e.g. trench field plates or buried field plates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/422—PN diodes having the PN junctions in mesas
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/106—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE]  having supplementary regions doped oppositely to or in rectifying contact with regions of the semiconductor bodies, e.g. guard rings with PN or Schottky junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/01—Manufacture or treatment
    • H10D8/043—Manufacture or treatment of planar diodes

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
CN202211102670.5A 2021-09-14 2022-09-09 半导体装置 Active CN115810629B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2021-149681 2021-09-14
JP2021149681A JP7607538B2 (ja) 2021-09-14 2021-09-14 半導体装置

Publications (2)

Publication Number Publication Date
CN115810629A CN115810629A (zh) 2023-03-17
CN115810629B true CN115810629B (zh) 2026-04-07

Family

ID=85284522

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202211102670.5A Active CN115810629B (zh) 2021-09-14 2022-09-09 半导体装置

Country Status (4)

Country Link
US (1) US20230083162A1 (https=)
JP (1) JP7607538B2 (https=)
CN (1) CN115810629B (https=)
DE (1) DE102022120566A1 (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPWO2024190920A1 (https=) 2023-03-16 2024-09-19
WO2024236880A1 (ja) * 2023-05-16 2024-11-21 富士電機株式会社 半導体装置
JPWO2025182319A1 (https=) * 2024-02-29 2025-09-04
CN119153504B (zh) * 2024-07-31 2025-09-23 海信家电集团股份有限公司 半导体装置和半导体装置的制造方法

Family Cites Families (37)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54133396A (en) 1978-04-08 1979-10-17 Toshiba Corp Method and apparatus for nondestructive measuring
US6351018B1 (en) * 1999-02-26 2002-02-26 Fairchild Semiconductor Corporation Monolithically integrated trench MOSFET and Schottky diode
JP3884206B2 (ja) * 2000-01-20 2007-02-21 株式会社東芝 半導体装置
JP2002305304A (ja) * 2001-04-05 2002-10-18 Toshiba Corp 電力用半導体装置
WO2011080928A1 (ja) * 2010-01-04 2011-07-07 株式会社日立製作所 半導体装置、及びそれを用いた電力変換装置
WO2011111500A1 (ja) * 2010-03-09 2011-09-15 富士電機システムズ株式会社 半導体装置
US8716746B2 (en) * 2010-08-17 2014-05-06 Denso Corporation Semiconductor device
EP2725623B1 (en) * 2011-09-08 2019-10-30 Fuji Electric Co., Ltd. Semiconductor device
US9337827B2 (en) * 2013-07-15 2016-05-10 Infineon Technologies Ag Electronic circuit with a reverse-conducting IGBT and gate driver circuit
EP2942816B1 (en) * 2013-08-15 2020-10-28 Fuji Electric Co., Ltd. Semiconductor device
US9960165B2 (en) * 2013-11-05 2018-05-01 Toyota Jidosha Kabushiki Kaisha Semiconductor device having adjacent IGBT and diode regions with a shifted boundary plane between a collector region and a cathode region
JP6119577B2 (ja) * 2013-11-26 2017-04-26 三菱電機株式会社 半導体装置
US9240450B2 (en) * 2014-02-12 2016-01-19 Infineon Technologies Ag IGBT with emitter electrode electrically connected with impurity zone
US10192977B2 (en) * 2014-04-21 2019-01-29 Mitsubishi Electric Corporation Power semiconductor device
WO2016027721A1 (ja) * 2014-08-20 2016-02-25 富士電機株式会社 半導体装置および半導体装置の製造方法
US12021118B2 (en) * 2015-08-26 2024-06-25 Mitsubishi Electric Corporation Semiconductor device
CN108463888B (zh) * 2016-01-19 2021-03-26 三菱电机株式会社 半导体装置
JP6414090B2 (ja) * 2016-01-27 2018-10-31 株式会社デンソー 半導体装置
JP6614326B2 (ja) * 2016-02-15 2019-12-04 富士電機株式会社 半導体装置
JP6565815B2 (ja) * 2016-07-21 2019-08-28 株式会社デンソー 半導体装置
EP3480855B1 (en) * 2017-02-15 2023-09-20 Fuji Electric Co., Ltd. Semiconductor device
JP6891560B2 (ja) * 2017-03-15 2021-06-18 富士電機株式会社 半導体装置
WO2019111572A1 (ja) * 2017-12-06 2019-06-13 富士電機株式会社 半導体装置
JP7067041B2 (ja) * 2017-12-11 2022-05-16 株式会社デンソー 半導体装置
JP6863479B2 (ja) * 2017-12-14 2021-04-21 富士電機株式会社 半導体装置およびその製造方法
JP7055056B2 (ja) * 2018-04-24 2022-04-15 三菱電機株式会社 半導体装置および半導体装置の製造方法
JP7024626B2 (ja) * 2018-06-27 2022-02-24 三菱電機株式会社 半導体装置、半導体装置の製造方法
JP7250473B2 (ja) * 2018-10-18 2023-04-03 三菱電機株式会社 半導体装置
JP7158317B2 (ja) * 2019-03-07 2022-10-21 三菱電機株式会社 半導体装置
US11276686B2 (en) * 2019-05-15 2022-03-15 Fuji Electric Co., Ltd. Semiconductor device
JP7151902B2 (ja) * 2019-07-31 2022-10-12 富士電機株式会社 半導体装置
JP7353891B2 (ja) * 2019-09-20 2023-10-02 株式会社東芝 半導体装置及び半導体回路
JP7325301B2 (ja) * 2019-11-01 2023-08-14 三菱電機株式会社 半導体装置およびその製造方法
JP7330092B2 (ja) * 2019-12-25 2023-08-21 三菱電機株式会社 半導体装置
JP7331733B2 (ja) * 2020-02-26 2023-08-23 三菱電機株式会社 半導体装置
JP7442932B2 (ja) * 2020-03-09 2024-03-05 三菱電機株式会社 半導体装置
JP7447769B2 (ja) * 2020-11-13 2024-03-12 三菱電機株式会社 半導体素子、半導体装置

Also Published As

Publication number Publication date
JP2023042402A (ja) 2023-03-27
US20230083162A1 (en) 2023-03-16
DE102022120566A1 (de) 2023-03-16
CN115810629A (zh) 2023-03-17
JP7607538B2 (ja) 2024-12-27

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