JPWO2025182319A1 - - Google Patents
Info
- Publication number
- JPWO2025182319A1 JPWO2025182319A1 JP2026503684A JP2026503684A JPWO2025182319A1 JP WO2025182319 A1 JPWO2025182319 A1 JP WO2025182319A1 JP 2026503684 A JP2026503684 A JP 2026503684A JP 2026503684 A JP2026503684 A JP 2026503684A JP WO2025182319 A1 JPWO2025182319 A1 JP WO2025182319A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/01—Manufacture or treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
- H10D30/66—Vertical DMOS [VDMOS] FETs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2024030797 | 2024-02-29 | ||
| PCT/JP2025/000734 WO2025182319A1 (ja) | 2024-02-29 | 2025-01-10 | 半導体装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPWO2025182319A1 true JPWO2025182319A1 (https=) | 2025-09-04 |
| JPWO2025182319A5 JPWO2025182319A5 (https=) | 2026-05-08 |
Family
ID=96920288
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2026503684A Pending JPWO2025182319A1 (https=) | 2024-02-29 | 2025-01-10 |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JPWO2025182319A1 (https=) |
| WO (1) | WO2025182319A1 (https=) |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6881463B2 (ja) * | 2016-09-14 | 2021-06-02 | 富士電機株式会社 | Ｒｃ−ｉｇｂｔおよびその製造方法 |
| JP6954333B2 (ja) * | 2016-10-26 | 2021-10-27 | 株式会社デンソー | 半導体装置 |
| JP7404702B2 (ja) * | 2019-08-09 | 2023-12-26 | 富士電機株式会社 | 半導体装置 |
| JP7607538B2 (ja) * | 2021-09-14 | 2024-12-27 | 三菱電機株式会社 | 半導体装置 |
-
2025
- 2025-01-10 JP JP2026503684A patent/JPWO2025182319A1/ja active Pending
- 2025-01-10 WO PCT/JP2025/000734 patent/WO2025182319A1/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| WO2025182319A1 (ja) | 2025-09-04 |
Similar Documents
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20260129 |