JP7607538B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

Info

Publication number
JP7607538B2
JP7607538B2 JP2021149681A JP2021149681A JP7607538B2 JP 7607538 B2 JP7607538 B2 JP 7607538B2 JP 2021149681 A JP2021149681 A JP 2021149681A JP 2021149681 A JP2021149681 A JP 2021149681A JP 7607538 B2 JP7607538 B2 JP 7607538B2
Authority
JP
Japan
Prior art keywords
diode
semiconductor layer
dummy active
active trench
region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2021149681A
Other languages
English (en)
Japanese (ja)
Other versions
JP2023042402A (ja
JP2023042402A5 (https=
Inventor
和也 小西
彰彦 古川
康一 西
秀紀 藤井
真也 曽根田
康雄 小西
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP2021149681A priority Critical patent/JP7607538B2/ja
Priority to US17/808,894 priority patent/US20230083162A1/en
Priority to DE102022120566.5A priority patent/DE102022120566A1/de
Priority to CN202211102670.5A priority patent/CN115810629B/zh
Publication of JP2023042402A publication Critical patent/JP2023042402A/ja
Publication of JP2023042402A5 publication Critical patent/JP2023042402A5/ja
Application granted granted Critical
Publication of JP7607538B2 publication Critical patent/JP7607538B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/01—Manufacture or treatment
    • H10D12/031—Manufacture or treatment of IGBTs
    • H10D12/032—Manufacture or treatment of IGBTs of vertical IGBTs
    • H10D12/038—Manufacture or treatment of IGBTs of vertical IGBTs having a recessed gate, e.g. trench-gate IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H10D12/441—Vertical IGBTs
    • H10D12/461—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions
    • H10D12/481—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions having gate structures on slanted surfaces, on vertical surfaces, or in grooves, e.g. trench gate IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H10D62/126—Top-view geometrical layouts of the regions or the junctions
    • H10D62/127—Top-view geometrical layouts of the regions or the junctions of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/129—Cathode regions of diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/141—Anode or cathode regions of thyristors; Collector or emitter regions of gated bipolar-mode devices, e.g. of IGBTs
    • H10D62/142—Anode regions of thyristors or collector regions of gated bipolar-mode devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/141—Anode or cathode regions of thyristors; Collector or emitter regions of gated bipolar-mode devices, e.g. of IGBTs
    • H10D62/145—Emitter regions of IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates
    • H10D64/117—Recessed field plates, e.g. trench field plates or buried field plates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/422—PN diodes having the PN junctions in mesas
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/106—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE]  having supplementary regions doped oppositely to or in rectifying contact with regions of the semiconductor bodies, e.g. guard rings with PN or Schottky junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/01—Manufacture or treatment
    • H10D8/043—Manufacture or treatment of planar diodes

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP2021149681A 2021-09-14 2021-09-14 半導体装置 Active JP7607538B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2021149681A JP7607538B2 (ja) 2021-09-14 2021-09-14 半導体装置
US17/808,894 US20230083162A1 (en) 2021-09-14 2022-06-24 Semiconductor device
DE102022120566.5A DE102022120566A1 (de) 2021-09-14 2022-08-16 Halbleitervorrichtung
CN202211102670.5A CN115810629B (zh) 2021-09-14 2022-09-09 半导体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2021149681A JP7607538B2 (ja) 2021-09-14 2021-09-14 半導体装置

Publications (3)

Publication Number Publication Date
JP2023042402A JP2023042402A (ja) 2023-03-27
JP2023042402A5 JP2023042402A5 (https=) 2023-09-26
JP7607538B2 true JP7607538B2 (ja) 2024-12-27

Family

ID=85284522

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2021149681A Active JP7607538B2 (ja) 2021-09-14 2021-09-14 半導体装置

Country Status (4)

Country Link
US (1) US20230083162A1 (https=)
JP (1) JP7607538B2 (https=)
CN (1) CN115810629B (https=)
DE (1) DE102022120566A1 (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPWO2024190920A1 (https=) 2023-03-16 2024-09-19
WO2024236880A1 (ja) * 2023-05-16 2024-11-21 富士電機株式会社 半導体装置
JPWO2025182319A1 (https=) * 2024-02-29 2025-09-04
CN119153504B (zh) * 2024-07-31 2025-09-23 海信家电集团股份有限公司 半导体装置和半导体装置的制造方法

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002538602A (ja) 1999-02-26 2002-11-12 フェアチャイルド セミコンダクター コーポレイション モノリシック集積されたトレンチｍｏｓｆｅｔ及びショットキー・ダイオード
WO2011080928A1 (ja) 2010-01-04 2011-07-07 株式会社日立製作所 半導体装置、及びそれを用いた電力変換装置
JP2015019370A (ja) 2013-07-15 2015-01-29 インフィネオン テクノロジーズ アーゲーＩｎｆｉｎｅｏｎ Ｔｅｃｈｎｏｌｏｇｉｅｓ Ａｇ 逆導通ｉｇｂｔおよびゲートドライバ回路を有する電子回路
US20150228723A1 (en) 2014-02-12 2015-08-13 Infineon Technologies Ag Semiconductor Device, Method for Manufacturing the Same and IGBT with Emitter Electrode Electrically Connected with Impurity Zone
WO2016027721A1 (ja) 2014-08-20 2016-02-25 富士電機株式会社 半導体装置および半導体装置の製造方法
JP2018014419A (ja) 2016-07-21 2018-01-25 株式会社デンソー 半導体装置
JP2018156996A (ja) 2017-03-15 2018-10-04 富士電機株式会社 半導体装置
JP2021136311A (ja) 2020-02-26 2021-09-13 三菱電機株式会社 半導体装置

Family Cites Families (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54133396A (en) 1978-04-08 1979-10-17 Toshiba Corp Method and apparatus for nondestructive measuring
JP3884206B2 (ja) * 2000-01-20 2007-02-21 株式会社東芝 半導体装置
JP2002305304A (ja) * 2001-04-05 2002-10-18 Toshiba Corp 電力用半導体装置
WO2011111500A1 (ja) * 2010-03-09 2011-09-15 富士電機システムズ株式会社 半導体装置
US8716746B2 (en) * 2010-08-17 2014-05-06 Denso Corporation Semiconductor device
EP2725623B1 (en) * 2011-09-08 2019-10-30 Fuji Electric Co., Ltd. Semiconductor device
EP2942816B1 (en) * 2013-08-15 2020-10-28 Fuji Electric Co., Ltd. Semiconductor device
US9960165B2 (en) * 2013-11-05 2018-05-01 Toyota Jidosha Kabushiki Kaisha Semiconductor device having adjacent IGBT and diode regions with a shifted boundary plane between a collector region and a cathode region
JP6119577B2 (ja) * 2013-11-26 2017-04-26 三菱電機株式会社 半導体装置
US10192977B2 (en) * 2014-04-21 2019-01-29 Mitsubishi Electric Corporation Power semiconductor device
US12021118B2 (en) * 2015-08-26 2024-06-25 Mitsubishi Electric Corporation Semiconductor device
CN108463888B (zh) * 2016-01-19 2021-03-26 三菱电机株式会社 半导体装置
JP6414090B2 (ja) * 2016-01-27 2018-10-31 株式会社デンソー 半導体装置
JP6614326B2 (ja) * 2016-02-15 2019-12-04 富士電機株式会社 半導体装置
EP3480855B1 (en) * 2017-02-15 2023-09-20 Fuji Electric Co., Ltd. Semiconductor device
WO2019111572A1 (ja) * 2017-12-06 2019-06-13 富士電機株式会社 半導体装置
JP7067041B2 (ja) * 2017-12-11 2022-05-16 株式会社デンソー 半導体装置
JP6863479B2 (ja) * 2017-12-14 2021-04-21 富士電機株式会社 半導体装置およびその製造方法
JP7055056B2 (ja) * 2018-04-24 2022-04-15 三菱電機株式会社 半導体装置および半導体装置の製造方法
JP7024626B2 (ja) * 2018-06-27 2022-02-24 三菱電機株式会社 半導体装置、半導体装置の製造方法
JP7250473B2 (ja) * 2018-10-18 2023-04-03 三菱電機株式会社 半導体装置
JP7158317B2 (ja) * 2019-03-07 2022-10-21 三菱電機株式会社 半導体装置
US11276686B2 (en) * 2019-05-15 2022-03-15 Fuji Electric Co., Ltd. Semiconductor device
JP7151902B2 (ja) * 2019-07-31 2022-10-12 富士電機株式会社 半導体装置
JP7353891B2 (ja) * 2019-09-20 2023-10-02 株式会社東芝 半導体装置及び半導体回路
JP7325301B2 (ja) * 2019-11-01 2023-08-14 三菱電機株式会社 半導体装置およびその製造方法
JP7330092B2 (ja) * 2019-12-25 2023-08-21 三菱電機株式会社 半導体装置
JP7442932B2 (ja) * 2020-03-09 2024-03-05 三菱電機株式会社 半導体装置
JP7447769B2 (ja) * 2020-11-13 2024-03-12 三菱電機株式会社 半導体素子、半導体装置

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002538602A (ja) 1999-02-26 2002-11-12 フェアチャイルド セミコンダクター コーポレイション モノリシック集積されたトレンチｍｏｓｆｅｔ及びショットキー・ダイオード
WO2011080928A1 (ja) 2010-01-04 2011-07-07 株式会社日立製作所 半導体装置、及びそれを用いた電力変換装置
JP2015019370A (ja) 2013-07-15 2015-01-29 インフィネオン テクノロジーズ アーゲーＩｎｆｉｎｅｏｎ Ｔｅｃｈｎｏｌｏｇｉｅｓ Ａｇ 逆導通ｉｇｂｔおよびゲートドライバ回路を有する電子回路
US20150228723A1 (en) 2014-02-12 2015-08-13 Infineon Technologies Ag Semiconductor Device, Method for Manufacturing the Same and IGBT with Emitter Electrode Electrically Connected with Impurity Zone
WO2016027721A1 (ja) 2014-08-20 2016-02-25 富士電機株式会社 半導体装置および半導体装置の製造方法
JP2018014419A (ja) 2016-07-21 2018-01-25 株式会社デンソー 半導体装置
JP2018156996A (ja) 2017-03-15 2018-10-04 富士電機株式会社 半導体装置
JP2021136311A (ja) 2020-02-26 2021-09-13 三菱電機株式会社 半導体装置

Also Published As

Publication number Publication date
JP2023042402A (ja) 2023-03-27
US20230083162A1 (en) 2023-03-16
DE102022120566A1 (de) 2023-03-16
CN115810629B (zh) 2026-04-07
CN115810629A (zh) 2023-03-17

Similar Documents

Publication Publication Date Title
JP7459666B2 (ja) 半導体装置
JP7607538B2 (ja) 半導体装置
JP7494745B2 (ja) 半導体装置および半導体装置の製造方法
US11495678B2 (en) Semiconductor device
JP7528687B2 (ja) 半導体装置
JP7805428B2 (ja) 半導体装置
JP7403386B2 (ja) 半導体装置
JP7683677B2 (ja) 半導体装置
CN108140674A (zh) 半导体装置
US12062654B2 (en) Semiconductor device and method of manufacturing semiconductor device
JP7476502B2 (ja) 半導体装置
JP7729171B2 (ja) 半導体装置および半導体装置の製造方法
JP7486453B2 (ja) 半導体装置及び半導体装置の製造方法
JP7758644B2 (ja) 半導体装置及び半導体装置の製造方法
JP2022014505A (ja) 半導体装置
US20260020326A1 (en) Semiconductor device and method of manufacturing semiconductor device
US20250120168A1 (en) Semiconductor device
JP2024161946A (ja) 半導体装置
JP2024168556A (ja) 半導体装置及び半導体装置の製造方法
JP2025030512A (ja) 半導体装置
JP2024145429A (ja) 半導体装置
JP2025042242A (ja) 半導体装置および半導体装置の製造方法

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20230915

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20230915

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20240612

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20240716

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20240830

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20241119

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20241217

R150 Certificate of patent or registration of utility model

Ref document number: 7607538

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150