JPWO2023084911A5 - - Google Patents
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- Publication number
- JPWO2023084911A5 JPWO2023084911A5 JP2023559452A JP2023559452A JPWO2023084911A5 JP WO2023084911 A5 JPWO2023084911 A5 JP WO2023084911A5 JP 2023559452 A JP2023559452 A JP 2023559452A JP 2023559452 A JP2023559452 A JP 2023559452A JP WO2023084911 A5 JPWO2023084911 A5 JP WO2023084911A5
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor
- impurity concentration
- semiconductor elements
- semiconductor element
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims description 87
- 239000000463 material Substances 0.000 claims description 3
- 239000012535 impurity Substances 0.000 claims 21
- 239000000758 substrate Substances 0.000 claims 15
- 230000005484 gravity Effects 0.000 claims 4
- 229910002601 GaN Inorganic materials 0.000 claims 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims 1
- 230000004888 barrier function Effects 0.000 claims 1
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 claims 1
- 230000005669 field effect Effects 0.000 claims 1
- 229910001195 gallium oxide Inorganic materials 0.000 claims 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims 1
- 229910010271 silicon carbide Inorganic materials 0.000 claims 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2021183513 | 2021-11-10 | ||
| PCT/JP2022/034554 WO2023084911A1 (ja) | 2021-11-10 | 2022-09-15 | 半導体装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPWO2023084911A1 JPWO2023084911A1 (https=) | 2023-05-19 |
| JPWO2023084911A5 true JPWO2023084911A5 (https=) | 2024-07-25 |
Family
ID=86335494
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2023559452A Pending JPWO2023084911A1 (https=) | 2021-11-10 | 2022-09-15 |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US20240413090A1 (https=) |
| JP (1) | JPWO2023084911A1 (https=) |
| WO (1) | WO2023084911A1 (https=) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2024100084A (ja) * | 2023-01-13 | 2024-07-26 | 三菱電機株式会社 | 半導体装置 |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05335451A (ja) * | 1992-05-28 | 1993-12-17 | Mega Chips:Kk | 半導体装置 |
| JP4572795B2 (ja) * | 2005-02-10 | 2010-11-04 | サンケン電気株式会社 | 絶縁ゲート型バイポーラトランジスタ |
| JP5546612B2 (ja) * | 2012-12-07 | 2014-07-09 | 三菱電機株式会社 | 電力用半導体装置 |
| JP2016127435A (ja) * | 2015-01-05 | 2016-07-11 | 三菱電機株式会社 | 半導体装置 |
| JP6890520B2 (ja) * | 2017-10-04 | 2021-06-18 | 三菱電機株式会社 | 電力用半導体装置 |
| JP7255344B2 (ja) * | 2019-04-26 | 2023-04-11 | 住友電気工業株式会社 | 炭化珪素半導体モジュールおよび炭化珪素半導体モジュールの製造方法 |
-
2022
- 2022-09-15 WO PCT/JP2022/034554 patent/WO2023084911A1/ja not_active Ceased
- 2022-09-15 JP JP2023559452A patent/JPWO2023084911A1/ja active Pending
- 2022-09-15 US US18/701,757 patent/US20240413090A1/en active Pending
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