JP2020519026A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2020519026A5 JP2020519026A5 JP2019560276A JP2019560276A JP2020519026A5 JP 2020519026 A5 JP2020519026 A5 JP 2020519026A5 JP 2019560276 A JP2019560276 A JP 2019560276A JP 2019560276 A JP2019560276 A JP 2019560276A JP 2020519026 A5 JP2020519026 A5 JP 2020519026A5
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- semiconductor layers
- iii
- nitride semiconductor
- group iii
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201762502205P | 2017-05-05 | 2017-05-05 | |
| US62/502,205 | 2017-05-05 | ||
| PCT/US2018/031393 WO2018204916A1 (en) | 2017-05-05 | 2018-05-07 | Method of removing a substrate |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2020519026A JP2020519026A (ja) | 2020-06-25 |
| JP2020519026A5 true JP2020519026A5 (https=) | 2020-08-06 |
| JP7158745B2 JP7158745B2 (ja) | 2022-10-24 |
Family
ID=64016802
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2019560276A Active JP7158745B2 (ja) | 2017-05-05 | 2018-05-07 | 基板を除去する方法 |
Country Status (5)
| Country | Link |
|---|---|
| US (3) | US12046695B2 (https=) |
| EP (2) | EP4411843A3 (https=) |
| JP (1) | JP7158745B2 (https=) |
| CN (1) | CN110603651B (https=) |
| WO (1) | WO2018204916A1 (https=) |
Families Citing this family (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US12087577B2 (en) | 2018-05-17 | 2024-09-10 | The Regents Of The University Of California | Method for dividing a bar of one or more devices |
| EP3912184A4 (en) * | 2019-01-16 | 2022-03-02 | The Regents of the University of California, A California Corporation | PROCEDURE FOR REMOVAL OF DEVICES USING A DIG |
| JP2022523861A (ja) * | 2019-03-12 | 2022-04-26 | ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア | 支持板を使用して１つ以上の素子のバーを除去するための方法 |
| US20220165570A1 (en) * | 2019-03-13 | 2022-05-26 | The Regents Of The University Of California | Substrate for removal of devices using void portions |
| JP7378239B2 (ja) * | 2019-07-30 | 2023-11-13 | 京セラ株式会社 | 積層体、窒化物半導体層の製造方法 |
| US20230127257A1 (en) * | 2020-04-17 | 2023-04-27 | The Regents Of The University Of California | Method for removing a device using an epitaxial lateral overgrowth technique |
| CN116057715A (zh) * | 2020-06-19 | 2023-05-02 | 加利福尼亚大学董事会 | 实现半导体器件的转移过程 |
| US20230411554A1 (en) * | 2020-10-23 | 2023-12-21 | The Regents Of The University Of California | Small size light emiting diodes fabricated via regrowth |
| CN116508137A (zh) * | 2020-10-28 | 2023-07-28 | 加利福尼亚大学董事会 | 将图案转移到发光器件的外延层的方法 |
| DE102020130017A1 (de) * | 2020-11-13 | 2022-05-19 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Verfahren zum herstellen einer mehrzahl von halbleiterlasern und halbleiterlaser |
| JP6986645B1 (ja) * | 2020-12-29 | 2021-12-22 | 京セラ株式会社 | 半導体基板、半導体デバイス、電子機器 |
| WO2022158557A1 (ja) * | 2021-01-22 | 2022-07-28 | 京セラ株式会社 | 発光素子、半導体レーザ素子並びにその製造方法および製造装置 |
| DE102021103484A1 (de) * | 2021-02-15 | 2022-08-18 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Verfahren zum herstellen einer mehrzahl von halbleiterlasern und halbleiterlaser |
| CN117678081A (zh) * | 2021-07-21 | 2024-03-08 | 京瓷株式会社 | 发光器件、显示器件、电子设备、和发光器件的制造方法以及制造装置 |
| WO2024211817A1 (en) | 2023-04-06 | 2024-10-10 | Slt Technologies, Inc. | High quality group-iii metal nitride crystals and methods of making |
| WO2025176467A1 (en) * | 2024-02-21 | 2025-08-28 | Ams-Osram International Gmbh | Method for manufacturing a plurality of semiconductor chips |
| WO2025195980A1 (en) * | 2024-03-18 | 2025-09-25 | Ams-Osram International Gmbh | Elo-based optoelectronic device and method of manufacturing an optoelectronic device |
Family Cites Families (41)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5641818Y2 (https=) | 1978-10-20 | 1981-09-30 | ||
| ATE261612T1 (de) | 1996-12-18 | 2004-03-15 | Canon Kk | Vefahren zum herstellen eines halbleiterartikels unter verwendung eines substrates mit einer porösen halbleiterschicht |
| FR2769924B1 (fr) | 1997-10-20 | 2000-03-10 | Centre Nat Rech Scient | Procede de realisation d'une couche epitaxiale de nitrure de gallium, couche epitaxiale de nitrure de gallium et composant optoelectronique muni d'une telle couche |
| US6252261B1 (en) * | 1998-09-30 | 2001-06-26 | Nec Corporation | GaN crystal film, a group III element nitride semiconductor wafer and a manufacturing process therefor |
| JP2000349338A (ja) | 1998-09-30 | 2000-12-15 | Nec Corp | ＧａＮ結晶膜、ＩＩＩ族元素窒化物半導体ウェーハ及びその製造方法 |
| US6177359B1 (en) * | 1999-06-07 | 2001-01-23 | Agilent Technologies, Inc. | Method for detaching an epitaxial layer from one substrate and transferring it to another substrate |
| JP2002334842A (ja) * | 2001-05-10 | 2002-11-22 | Sony Corp | 窒化物半導体装置の製造方法 |
| TW558743B (en) | 2001-08-22 | 2003-10-21 | Semiconductor Energy Lab | Peeling method and method of manufacturing semiconductor device |
| US6815241B2 (en) * | 2002-09-25 | 2004-11-09 | Cao Group, Inc. | GaN structures having low dislocation density and methods of manufacture |
| US7372077B2 (en) * | 2003-02-07 | 2008-05-13 | Sanyo Electric Co., Ltd. | Semiconductor device |
| US6855571B1 (en) | 2003-02-14 | 2005-02-15 | Matsushita Electric Industrial Co., Ltd. | Method of producing GaN-based semiconductor laser device and semiconductor substrate used therefor |
| JP5194334B2 (ja) | 2004-05-18 | 2013-05-08 | 住友電気工業株式会社 | Ｉｉｉ族窒化物半導体デバイスの製造方法 |
| JP4571476B2 (ja) | 2004-10-18 | 2010-10-27 | ローム株式会社 | 半導体装置の製造方法 |
| JP4986406B2 (ja) * | 2005-03-31 | 2012-07-25 | 住友電工デバイス・イノベーション株式会社 | 半導体装置の製造方法 |
| JP2010512301A (ja) | 2006-12-12 | 2010-04-22 | ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア | 様々な基板上の（Ａｌ，Ｉｎ，Ｇａ，Ｂ）ＮのＭ面および半極性面の結晶成長 |
| EP2111634A4 (en) * | 2007-02-12 | 2014-01-08 | Univ California | AL (X) GA (1-X) N-FAIR-FREE NONPOLAR III-NITRIDE BASED LASER DIODES AND LED DIODES |
| US8085825B2 (en) | 2007-03-06 | 2011-12-27 | Sanyo Electric Co., Ltd. | Method of fabricating semiconductor laser diode apparatus and semiconductor laser diode apparatus |
| JP2008252069A (ja) | 2007-03-06 | 2008-10-16 | Sanyo Electric Co Ltd | 半導体レーザ素子の製造方法および半導体レーザ素子 |
| US8574968B2 (en) * | 2007-07-26 | 2013-11-05 | Soitec | Epitaxial methods and templates grown by the methods |
| WO2009061353A2 (en) | 2007-11-02 | 2009-05-14 | President And Fellows Of Harvard College | Production of free-standing solid state layers by thermal processing of substrates with a polymer |
| JPWO2009118979A1 (ja) * | 2008-03-28 | 2011-07-21 | パナソニック株式会社 | 窒化物半導体発光装置 |
| JP5180050B2 (ja) | 2008-12-17 | 2013-04-10 | スタンレー電気株式会社 | 半導体素子の製造方法 |
| JP4638958B1 (ja) * | 2009-08-20 | 2011-02-23 | 株式会社パウデック | 半導体素子の製造方法 |
| US20120309269A1 (en) | 2011-06-01 | 2012-12-06 | King Abdulaziz City For Science And Technology | Low-temperature methods for spontaneous material spalling |
| JP5561489B2 (ja) | 2011-09-02 | 2014-07-30 | 信越半導体株式会社 | ＧａＮ自立基板の製造方法 |
| WO2013141561A1 (ko) * | 2012-03-19 | 2013-09-26 | 서울옵토디바이스주식회사 | 에피층과 성장 기판 분리 방법 및 이를 이용한 반도체 소자 |
| JP2013251304A (ja) * | 2012-05-30 | 2013-12-12 | Furukawa Co Ltd | 積層体および積層体の製造方法 |
| JP2013251394A (ja) | 2012-05-31 | 2013-12-12 | Hitachi Ltd | 半導体レーザ装置 |
| DE102012217644A1 (de) * | 2012-09-27 | 2014-03-27 | Osram Opto Semiconductors Gmbh | Optoelektronisches Bauelement |
| WO2014061906A1 (ko) | 2012-10-15 | 2014-04-24 | 서울바이오시스 주식회사 | 성장 기판 분리 방법, 발광 다이오드 제조 방법 및 그것에 의해 제조된 발광 다이오드 |
| US9166372B1 (en) * | 2013-06-28 | 2015-10-20 | Soraa Laser Diode, Inc. | Gallium nitride containing laser device configured on a patterned substrate |
| JP2016532303A (ja) | 2013-08-26 | 2016-10-13 | ザ リージェンツ オブ ザ ユニヴァシティ オブ ミシガン | エピタキシャルリフトオフおよび剥離の組み合わせによる薄膜リフトオフ |
| KR20150072066A (ko) | 2013-12-19 | 2015-06-29 | 서울바이오시스 주식회사 | 반도체 성장용 템플릿, 성장 기판 분리 방법 및 이를 이용한 발광소자 제조 방법 |
| US9245747B2 (en) * | 2014-05-01 | 2016-01-26 | International Business Machines Corporation | Engineered base substrates for releasing III-V epitaxy through spalling |
| US9490119B2 (en) * | 2014-05-21 | 2016-11-08 | Palo Alto Research Center Incorporated | Fabrication of thin-film devices using selective area epitaxy |
| US20170236807A1 (en) | 2014-10-28 | 2017-08-17 | The Regents Of The University Of California | Iii-v micro-led arrays and methods for preparing the same |
| JP6245239B2 (ja) | 2015-09-11 | 2017-12-13 | 日亜化学工業株式会社 | 半導体レーザ素子の製造方法 |
| EP3682465A4 (en) | 2017-09-15 | 2021-06-02 | The Regents of The University of California | METHOD OF REMOVING A SUBSTRATE USING A SPREADING TECHNIQUE |
| CN112204754B (zh) | 2018-05-30 | 2024-08-13 | 加利福尼亚大学董事会 | 从半导体衬底移除半导体层的方法 |
| TWI834979B (zh) * | 2020-06-22 | 2024-03-11 | 日商京瓷股份有限公司 | 半導體裝置之製造方法、半導體基板及電子機器 |
| JP6986645B1 (ja) * | 2020-12-29 | 2021-12-22 | 京セラ株式会社 | 半導体基板、半導体デバイス、電子機器 |
-
2018
- 2018-05-07 CN CN201880029662.8A patent/CN110603651B/zh active Active
- 2018-05-07 JP JP2019560276A patent/JP7158745B2/ja active Active
- 2018-05-07 EP EP24169398.5A patent/EP4411843A3/en active Pending
- 2018-05-07 WO PCT/US2018/031393 patent/WO2018204916A1/en not_active Ceased
- 2018-05-07 EP EP18794585.2A patent/EP3619748B1/en active Active
- 2018-05-07 US US16/608,071 patent/US12046695B2/en active Active
-
2022
- 2022-07-12 US US17/862,744 patent/US20220352409A1/en not_active Abandoned
- 2022-07-12 US US17/863,084 patent/US20220352410A1/en not_active Abandoned
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2020519026A5 (https=) | ||
| TWI357163B (en) | Method of forming light-emitting element | |
| US20120112239A1 (en) | Nitride semiconductor light-emitting device and method for fabricating thereof | |
| JP6207616B2 (ja) | オプトエレクトロニクス素子の製造方法 | |
| JP2001185493A5 (https=) | ||
| JP6218933B2 (ja) | オプトエレクトロニクス半導体チップを製造する方法 | |
| US7888270B2 (en) | Etching method for nitride semiconductor | |
| CN103548154A (zh) | 半导体器件及制造方法 | |
| JP2009231595A (ja) | 半導体素子製造方法 | |
| US8501597B2 (en) | Method for fabricating group III-nitride semiconductor | |
| US9287366B2 (en) | III nitride semiconductor device and method of producing the same | |
| KR101341824B1 (ko) | 중간 에피택셜 구조 및 에피택셜 구조의 제조 방법 | |
| JP2010021537A (ja) | 基板構造体及びこの基板構造体を除去する方法 | |
| KR101354491B1 (ko) | 고효율 발광다이오드 제조방법 | |
| US10658541B2 (en) | Selective growth of nitride buffer layer | |
| JP2018170491A5 (https=) | ||
| EP2869331A1 (en) | Episubstrates for selective area growth of group iii-v material and a method for fabricating a group iii-v material on a silicon substrate | |
| JP6341943B2 (ja) | 半導体基板配列、および半導体基板配列の形成方法 | |
| JP6498319B2 (ja) | 窒素化合物半導体デバイスの製造方法 | |
| CN115461841A (zh) | Ⅲ族氮化物结构及其制作方法 | |
| CN109872943B (zh) | 形成用于半导体结构的方法以及由该方法制造的半导体结构 | |
| CN106469648B (zh) | 一种外延结构及方法 | |
| JP2014237570A (ja) | 窒化物半導体基板の製造方法 | |
| KR101923673B1 (ko) | 질화갈륨계 반도체 소자를 제조하는 방법 | |
| US20100184279A1 (en) | Method of Making an Epitaxial Structure Having Low Defect Density |