CN110603651B - 移除衬底的方法 - Google Patents

移除衬底的方法 Download PDF

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Publication number
CN110603651B
CN110603651B CN201880029662.8A CN201880029662A CN110603651B CN 110603651 B CN110603651 B CN 110603651B CN 201880029662 A CN201880029662 A CN 201880029662A CN 110603651 B CN110603651 B CN 110603651B
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substrate
semiconductor layers
growth
nitride
based semiconductor
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CN110603651A (zh
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神川刚
S·甘德瑞蒂拉
李鸿渐
D·A·科昂
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University of California San Diego UCSD
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University of California San Diego UCSD
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