JP7158745B2 - 基板を除去する方法 - Google Patents
基板を除去する方法 Download PDFInfo
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- JP7158745B2 JP7158745B2 JP2019560276A JP2019560276A JP7158745B2 JP 7158745 B2 JP7158745 B2 JP 7158745B2 JP 2019560276 A JP2019560276 A JP 2019560276A JP 2019560276 A JP2019560276 A JP 2019560276A JP 7158745 B2 JP7158745 B2 JP 7158745B2
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- nitride semiconductor
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
- Drying Of Semiconductors (AREA)
- Led Devices (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201762502205P | 2017-05-05 | 2017-05-05 | |
| US62/502,205 | 2017-05-05 | ||
| PCT/US2018/031393 WO2018204916A1 (en) | 2017-05-05 | 2018-05-07 | Method of removing a substrate |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2020519026A JP2020519026A (ja) | 2020-06-25 |
| JP2020519026A5 JP2020519026A5 (https=) | 2020-08-06 |
| JP7158745B2 true JP7158745B2 (ja) | 2022-10-24 |
Family
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| EP (2) | EP4411843A3 (https=) |
| JP (1) | JP7158745B2 (https=) |
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| US12087577B2 (en) | 2018-05-17 | 2024-09-10 | The Regents Of The University Of California | Method for dividing a bar of one or more devices |
| EP3912184A4 (en) * | 2019-01-16 | 2022-03-02 | The Regents of the University of California, A California Corporation | PROCEDURE FOR REMOVAL OF DEVICES USING A DIG |
| JP2022523861A (ja) * | 2019-03-12 | 2022-04-26 | ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア | 支持板を使用して1つ以上の素子のバーを除去するための方法 |
| US20220165570A1 (en) * | 2019-03-13 | 2022-05-26 | The Regents Of The University Of California | Substrate for removal of devices using void portions |
| JP7378239B2 (ja) * | 2019-07-30 | 2023-11-13 | 京セラ株式会社 | 積層体、窒化物半導体層の製造方法 |
| US20230127257A1 (en) * | 2020-04-17 | 2023-04-27 | The Regents Of The University Of California | Method for removing a device using an epitaxial lateral overgrowth technique |
| CN116057715A (zh) * | 2020-06-19 | 2023-05-02 | 加利福尼亚大学董事会 | 实现半导体器件的转移过程 |
| US20230411554A1 (en) * | 2020-10-23 | 2023-12-21 | The Regents Of The University Of California | Small size light emiting diodes fabricated via regrowth |
| CN116508137A (zh) * | 2020-10-28 | 2023-07-28 | 加利福尼亚大学董事会 | 将图案转移到发光器件的外延层的方法 |
| DE102020130017A1 (de) * | 2020-11-13 | 2022-05-19 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Verfahren zum herstellen einer mehrzahl von halbleiterlasern und halbleiterlaser |
| JP6986645B1 (ja) * | 2020-12-29 | 2021-12-22 | 京セラ株式会社 | 半導体基板、半導体デバイス、電子機器 |
| WO2022158557A1 (ja) * | 2021-01-22 | 2022-07-28 | 京セラ株式会社 | 発光素子、半導体レーザ素子並びにその製造方法および製造装置 |
| DE102021103484A1 (de) * | 2021-02-15 | 2022-08-18 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Verfahren zum herstellen einer mehrzahl von halbleiterlasern und halbleiterlaser |
| CN117678081A (zh) * | 2021-07-21 | 2024-03-08 | 京瓷株式会社 | 发光器件、显示器件、电子设备、和发光器件的制造方法以及制造装置 |
| WO2024211817A1 (en) | 2023-04-06 | 2024-10-10 | Slt Technologies, Inc. | High quality group-iii metal nitride crystals and methods of making |
| WO2025176467A1 (en) * | 2024-02-21 | 2025-08-28 | Ams-Osram International Gmbh | Method for manufacturing a plurality of semiconductor chips |
| WO2025195980A1 (en) * | 2024-03-18 | 2025-09-25 | Ams-Osram International Gmbh | Elo-based optoelectronic device and method of manufacturing an optoelectronic device |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001053056A (ja) | 1999-06-07 | 2001-02-23 | Agilent Technol Inc | エピタキシャル層を1つの基板から分離して他の基板に移し替えるための方法 |
| JP2002334842A (ja) | 2001-05-10 | 2002-11-22 | Sony Corp | 窒化物半導体装置の製造方法 |
| JP2008252069A (ja) | 2007-03-06 | 2008-10-16 | Sanyo Electric Co Ltd | 半導体レーザ素子の製造方法および半導体レーザ素子 |
| JP2013251304A (ja) | 2012-05-30 | 2013-12-12 | Furukawa Co Ltd | 積層体および積層体の製造方法 |
Family Cites Families (37)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5641818Y2 (https=) | 1978-10-20 | 1981-09-30 | ||
| ATE261612T1 (de) | 1996-12-18 | 2004-03-15 | Canon Kk | Vefahren zum herstellen eines halbleiterartikels unter verwendung eines substrates mit einer porösen halbleiterschicht |
| FR2769924B1 (fr) | 1997-10-20 | 2000-03-10 | Centre Nat Rech Scient | Procede de realisation d'une couche epitaxiale de nitrure de gallium, couche epitaxiale de nitrure de gallium et composant optoelectronique muni d'une telle couche |
| US6252261B1 (en) * | 1998-09-30 | 2001-06-26 | Nec Corporation | GaN crystal film, a group III element nitride semiconductor wafer and a manufacturing process therefor |
| JP2000349338A (ja) | 1998-09-30 | 2000-12-15 | Nec Corp | GaN結晶膜、III族元素窒化物半導体ウェーハ及びその製造方法 |
| TW558743B (en) | 2001-08-22 | 2003-10-21 | Semiconductor Energy Lab | Peeling method and method of manufacturing semiconductor device |
| US6815241B2 (en) * | 2002-09-25 | 2004-11-09 | Cao Group, Inc. | GaN structures having low dislocation density and methods of manufacture |
| US7372077B2 (en) * | 2003-02-07 | 2008-05-13 | Sanyo Electric Co., Ltd. | Semiconductor device |
| US6855571B1 (en) | 2003-02-14 | 2005-02-15 | Matsushita Electric Industrial Co., Ltd. | Method of producing GaN-based semiconductor laser device and semiconductor substrate used therefor |
| JP5194334B2 (ja) | 2004-05-18 | 2013-05-08 | 住友電気工業株式会社 | Iii族窒化物半導体デバイスの製造方法 |
| JP4571476B2 (ja) | 2004-10-18 | 2010-10-27 | ローム株式会社 | 半導体装置の製造方法 |
| JP4986406B2 (ja) * | 2005-03-31 | 2012-07-25 | 住友電工デバイス・イノベーション株式会社 | 半導体装置の製造方法 |
| JP2010512301A (ja) | 2006-12-12 | 2010-04-22 | ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア | 様々な基板上の(Al,In,Ga,B)NのM面および半極性面の結晶成長 |
| EP2111634A4 (en) * | 2007-02-12 | 2014-01-08 | Univ California | AL (X) GA (1-X) N-FAIR-FREE NONPOLAR III-NITRIDE BASED LASER DIODES AND LED DIODES |
| US8085825B2 (en) | 2007-03-06 | 2011-12-27 | Sanyo Electric Co., Ltd. | Method of fabricating semiconductor laser diode apparatus and semiconductor laser diode apparatus |
| US8574968B2 (en) * | 2007-07-26 | 2013-11-05 | Soitec | Epitaxial methods and templates grown by the methods |
| WO2009061353A2 (en) | 2007-11-02 | 2009-05-14 | President And Fellows Of Harvard College | Production of free-standing solid state layers by thermal processing of substrates with a polymer |
| JPWO2009118979A1 (ja) * | 2008-03-28 | 2011-07-21 | パナソニック株式会社 | 窒化物半導体発光装置 |
| JP5180050B2 (ja) | 2008-12-17 | 2013-04-10 | スタンレー電気株式会社 | 半導体素子の製造方法 |
| JP4638958B1 (ja) * | 2009-08-20 | 2011-02-23 | 株式会社パウデック | 半導体素子の製造方法 |
| US20120309269A1 (en) | 2011-06-01 | 2012-12-06 | King Abdulaziz City For Science And Technology | Low-temperature methods for spontaneous material spalling |
| JP5561489B2 (ja) | 2011-09-02 | 2014-07-30 | 信越半導体株式会社 | GaN自立基板の製造方法 |
| WO2013141561A1 (ko) * | 2012-03-19 | 2013-09-26 | 서울옵토디바이스주식회사 | 에피층과 성장 기판 분리 방법 및 이를 이용한 반도체 소자 |
| JP2013251394A (ja) | 2012-05-31 | 2013-12-12 | Hitachi Ltd | 半導体レーザ装置 |
| DE102012217644A1 (de) * | 2012-09-27 | 2014-03-27 | Osram Opto Semiconductors Gmbh | Optoelektronisches Bauelement |
| WO2014061906A1 (ko) | 2012-10-15 | 2014-04-24 | 서울바이오시스 주식회사 | 성장 기판 분리 방법, 발광 다이오드 제조 방법 및 그것에 의해 제조된 발광 다이오드 |
| US9166372B1 (en) * | 2013-06-28 | 2015-10-20 | Soraa Laser Diode, Inc. | Gallium nitride containing laser device configured on a patterned substrate |
| JP2016532303A (ja) | 2013-08-26 | 2016-10-13 | ザ リージェンツ オブ ザ ユニヴァシティ オブ ミシガン | エピタキシャルリフトオフおよび剥離の組み合わせによる薄膜リフトオフ |
| KR20150072066A (ko) | 2013-12-19 | 2015-06-29 | 서울바이오시스 주식회사 | 반도체 성장용 템플릿, 성장 기판 분리 방법 및 이를 이용한 발광소자 제조 방법 |
| US9245747B2 (en) * | 2014-05-01 | 2016-01-26 | International Business Machines Corporation | Engineered base substrates for releasing III-V epitaxy through spalling |
| US9490119B2 (en) * | 2014-05-21 | 2016-11-08 | Palo Alto Research Center Incorporated | Fabrication of thin-film devices using selective area epitaxy |
| US20170236807A1 (en) | 2014-10-28 | 2017-08-17 | The Regents Of The University Of California | Iii-v micro-led arrays and methods for preparing the same |
| JP6245239B2 (ja) | 2015-09-11 | 2017-12-13 | 日亜化学工業株式会社 | 半導体レーザ素子の製造方法 |
| EP3682465A4 (en) | 2017-09-15 | 2021-06-02 | The Regents of The University of California | METHOD OF REMOVING A SUBSTRATE USING A SPREADING TECHNIQUE |
| CN112204754B (zh) | 2018-05-30 | 2024-08-13 | 加利福尼亚大学董事会 | 从半导体衬底移除半导体层的方法 |
| TWI834979B (zh) * | 2020-06-22 | 2024-03-11 | 日商京瓷股份有限公司 | 半導體裝置之製造方法、半導體基板及電子機器 |
| JP6986645B1 (ja) * | 2020-12-29 | 2021-12-22 | 京セラ株式会社 | 半導体基板、半導体デバイス、電子機器 |
-
2018
- 2018-05-07 CN CN201880029662.8A patent/CN110603651B/zh active Active
- 2018-05-07 JP JP2019560276A patent/JP7158745B2/ja active Active
- 2018-05-07 EP EP24169398.5A patent/EP4411843A3/en active Pending
- 2018-05-07 WO PCT/US2018/031393 patent/WO2018204916A1/en not_active Ceased
- 2018-05-07 EP EP18794585.2A patent/EP3619748B1/en active Active
- 2018-05-07 US US16/608,071 patent/US12046695B2/en active Active
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2022
- 2022-07-12 US US17/862,744 patent/US20220352409A1/en not_active Abandoned
- 2022-07-12 US US17/863,084 patent/US20220352410A1/en not_active Abandoned
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001053056A (ja) | 1999-06-07 | 2001-02-23 | Agilent Technol Inc | エピタキシャル層を1つの基板から分離して他の基板に移し替えるための方法 |
| JP2002334842A (ja) | 2001-05-10 | 2002-11-22 | Sony Corp | 窒化物半導体装置の製造方法 |
| JP2008252069A (ja) | 2007-03-06 | 2008-10-16 | Sanyo Electric Co Ltd | 半導体レーザ素子の製造方法および半導体レーザ素子 |
| JP2013251304A (ja) | 2012-05-30 | 2013-12-12 | Furukawa Co Ltd | 積層体および積層体の製造方法 |
Also Published As
| Publication number | Publication date |
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| US20220352410A1 (en) | 2022-11-03 |
| EP3619748A4 (en) | 2021-01-06 |
| WO2018204916A1 (en) | 2018-11-08 |
| EP3619748B1 (en) | 2024-04-17 |
| EP3619748A1 (en) | 2020-03-11 |
| EP4411843A3 (en) | 2024-10-30 |
| US12046695B2 (en) | 2024-07-23 |
| US20220352409A1 (en) | 2022-11-03 |
| EP4411843A2 (en) | 2024-08-07 |
| CN110603651B (zh) | 2023-07-18 |
| US20200194615A1 (en) | 2020-06-18 |
| CN110603651A (zh) | 2019-12-20 |
| JP2020519026A (ja) | 2020-06-25 |
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