JP2020507922A5 - - Google Patents

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JP2020507922A5
JP2020507922A5 JP2019541270A JP2019541270A JP2020507922A5 JP 2020507922 A5 JP2020507922 A5 JP 2020507922A5 JP 2019541270 A JP2019541270 A JP 2019541270A JP 2019541270 A JP2019541270 A JP 2019541270A JP 2020507922 A5 JP2020507922 A5 JP 2020507922A5
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based precursor
precursor gas
layer
gas
boron
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JP2019541270A
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JP7229929B2 (ja
JP2020507922A (ja
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Priority claimed from PCT/US2018/013099 external-priority patent/WO2018144198A1/en
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JP2019541270A 2017-02-01 2018-01-10 ハードマスク応用向けのホウ素がドープされた炭化タングステン Active JP7229929B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201762453288P 2017-02-01 2017-02-01
US62/453,288 2017-02-01
PCT/US2018/013099 WO2018144198A1 (en) 2017-02-01 2018-01-10 Boron doped tungsten carbide for hardmask applications

Publications (3)

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JP2020507922A JP2020507922A (ja) 2020-03-12
JP2020507922A5 true JP2020507922A5 (enExample) 2021-02-25
JP7229929B2 JP7229929B2 (ja) 2023-02-28

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JP2019541270A Active JP7229929B2 (ja) 2017-02-01 2018-01-10 ハードマスク応用向けのホウ素がドープされた炭化タングステン

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US (1) US10403502B2 (enExample)
JP (1) JP7229929B2 (enExample)
KR (1) KR102557334B1 (enExample)
CN (1) CN110249410B (enExample)
TW (1) TWI749165B (enExample)
WO (1) WO2018144198A1 (enExample)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2020035869A (ja) * 2018-08-29 2020-03-05 キオクシア株式会社 マスク材、および半導体装置の製造方法
WO2021086835A1 (en) * 2019-11-01 2021-05-06 Applied Materials, Inc. Reduced defect deposition processes
US12027366B2 (en) * 2019-11-12 2024-07-02 Applied Materials, Inc. Reduced hydrogen deposition processes
US12191115B2 (en) * 2019-11-25 2025-01-07 Applied Materials, Inc. Dual RF for controllable film deposition
JP7634642B2 (ja) * 2020-07-19 2025-02-21 アプライド マテリアルズ インコーポレイテッド ホウ素がドープされたシリコン材料を利用した集積プロセス
KR20220012474A (ko) 2020-07-22 2022-02-04 주식회사 원익아이피에스 박막 증착 방법 및 이를 이용한 반도체 소자의 제조방법
KR20230118568A (ko) * 2020-12-10 2023-08-11 도쿄엘렉트론가부시키가이샤 플라즈마 처리 방법 및 플라즈마 처리 장치
US20220293416A1 (en) * 2021-03-12 2022-09-15 Applied Materials, Inc. Systems and methods for improved carbon adhesion
JP2022146092A (ja) * 2021-03-22 2022-10-05 東京エレクトロン株式会社 基板処理方法及び基板処理装置
US12077852B2 (en) * 2021-04-26 2024-09-03 Applied Materials, Inc. Metal-doped boron films
CN115702474A (zh) * 2021-05-14 2023-02-14 朗姆研究公司 高选择性掺杂硬掩模膜
KR20250026848A (ko) * 2022-06-27 2025-02-25 램 리써치 코포레이션 통합된 높은 종횡비 에칭
US20240387190A1 (en) * 2023-05-15 2024-11-21 Applied Materials, Inc. Formation of silicon-and-metal-containing materials for hardmask applications
US20250095990A1 (en) * 2023-09-19 2025-03-20 Applied Materials, Inc. Metal-containing hardmask opening methods using boron-and-halogen-containing precursors
WO2025101319A1 (en) * 2023-11-07 2025-05-15 Applied Materials, Inc. High selectivity cryogenic tungsten-boron-carbide etch
TW202534197A (zh) * 2023-11-15 2025-09-01 美商蘭姆研究公司 在電漿腔室中碳膜的改質

Family Cites Families (49)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0799495A4 (en) 1994-11-10 1999-11-03 Lawrence Semiconductor Researc Silicon-germanium-carbon compositions and processes thereof
US5821169A (en) 1996-08-05 1998-10-13 Sharp Microelectronics Technology,Inc. Hard mask method for transferring a multi-level photoresist pattern
US6958295B1 (en) * 1998-01-20 2005-10-25 Tegal Corporation Method for using a hard mask for critical dimension growth containment
US6198616B1 (en) 1998-04-03 2001-03-06 Applied Materials, Inc. Method and apparatus for supplying a chucking voltage to an electrostatic chuck within a semiconductor wafer processing system
US7101795B1 (en) 2000-06-28 2006-09-05 Applied Materials, Inc. Method and apparatus for depositing refractory metal layers employing sequential deposition techniques to form a nucleation layer
US6893938B2 (en) * 2003-04-21 2005-05-17 Infineon Technologies Ag STI formation for vertical and planar transistors
US8501594B2 (en) 2003-10-10 2013-08-06 Applied Materials, Inc. Methods for forming silicon germanium layers
US7365014B2 (en) * 2004-01-30 2008-04-29 Applied Materials, Inc. Reticle fabrication using a removable hard mask
JP4879159B2 (ja) 2004-03-05 2012-02-22 アプライド マテリアルズ インコーポレイテッド アモルファス炭素膜堆積のためのcvdプロセス
US7079740B2 (en) * 2004-03-12 2006-07-18 Applied Materials, Inc. Use of amorphous carbon film as a hardmask in the fabrication of optical waveguides
KR100568257B1 (ko) 2004-07-29 2006-04-07 삼성전자주식회사 듀얼 다마신 배선의 제조방법
KR100669141B1 (ko) 2005-01-17 2007-01-15 삼성전자주식회사 오믹막 및 이의 형성 방법, 오믹막을 포함하는 반도체장치 및 이의 제조 방법
US7413992B2 (en) * 2005-06-01 2008-08-19 Lam Research Corporation Tungsten silicide etch process with reduced etch rate micro-loading
KR100669107B1 (ko) 2005-07-11 2007-01-16 삼성전자주식회사 마스크 구조물, 이의 제조 방법, 이를 이용한 패턴 형성방법 및 반도체 장치의 콘택 형성 방법
KR100735520B1 (ko) 2005-09-23 2007-07-04 삼성전자주식회사 텅스텐 실리사이드막 형성 방법 및 이를 이용한 반도체소자의 제조 방법
KR20070047624A (ko) * 2005-11-02 2007-05-07 주성엔지니어링(주) 박막 패턴 형성 방법
US8110493B1 (en) 2005-12-23 2012-02-07 Novellus Systems, Inc. Pulsed PECVD method for modulating hydrogen content in hard mask
KR100713925B1 (ko) 2005-12-28 2007-05-07 주식회사 하이닉스반도체 반도체 소자의 제조방법
US7728503B2 (en) 2006-03-29 2010-06-01 Ricoh Company, Ltd. Electron emission element, charging device, process cartridge, and image forming apparatus
KR100808056B1 (ko) * 2006-12-27 2008-02-28 주식회사 하이닉스반도체 하드마스크를 이용한 패턴 형성 방법
US7659197B1 (en) 2007-09-21 2010-02-09 Novellus Systems, Inc. Selective resputtering of metal seed layers
KR100939777B1 (ko) 2007-11-30 2010-01-29 주식회사 하이닉스반도체 텅스텐막 형성방법 및 이를 이용한 반도체 소자의 배선형성방법
US8053365B2 (en) 2007-12-21 2011-11-08 Novellus Systems, Inc. Methods for forming all tungsten contacts and lines
US8148269B2 (en) * 2008-04-04 2012-04-03 Applied Materials, Inc. Boron nitride and boron-nitride derived materials deposition method
US9159571B2 (en) 2009-04-16 2015-10-13 Lam Research Corporation Tungsten deposition process using germanium-containing reducing agent
JP5656010B2 (ja) * 2009-12-04 2015-01-21 ノベラス・システムズ・インコーポレーテッドNovellus Systems Incorporated ハードマスク膜を形成する方法およびハードマスク膜を成膜する装置
KR101566925B1 (ko) 2010-01-29 2015-11-16 삼성전자주식회사 반도체소자의 제조방법
JP5621735B2 (ja) * 2010-09-03 2014-11-12 信越化学工業株式会社 パターン形成方法及び化学増幅ポジ型レジスト材料
TW201216331A (en) * 2010-10-05 2012-04-16 Applied Materials Inc Ultra high selectivity doped amorphous carbon strippable hardmask development and integration
WO2012118847A2 (en) * 2011-02-28 2012-09-07 Inpria Corportion Solution processible hardmarks for high resolusion lithography
JP2012204456A (ja) * 2011-03-24 2012-10-22 Toshiba Corp 半導体装置の製造方法
US8647989B2 (en) * 2011-04-15 2014-02-11 United Microelectronics Corp. Method of forming opening on semiconductor substrate
US9034760B2 (en) 2012-06-29 2015-05-19 Novellus Systems, Inc. Methods of forming tensile tungsten films and compressive tungsten films
US9040421B2 (en) 2013-05-03 2015-05-26 GlobalFoundries, Inc. Methods for fabricating integrated circuits with improved contact structures
US8927442B1 (en) * 2013-07-25 2015-01-06 International Business Machines Corporation SiCOH hardmask with graded transition layers
US9018103B2 (en) * 2013-09-26 2015-04-28 Lam Research Corporation High aspect ratio etch with combination mask
WO2015105651A1 (en) * 2014-01-08 2015-07-16 Applied Materials, Inc. Development of high etch selective hardmask material by ion implantation into amorphous carbon films
JP5852151B2 (ja) * 2014-02-12 2016-02-03 株式会社日立国際電気 半導体装置の製造方法、基板処理装置、プログラム及び記録媒体
CN105097704B (zh) * 2014-05-04 2018-02-16 中芯国际集成电路制造(上海)有限公司 闪存器件及其形成方法
US9624577B2 (en) * 2014-07-22 2017-04-18 Applied Materials, Inc. Deposition of metal doped amorphous carbon film
US9938616B2 (en) * 2014-07-29 2018-04-10 Lam Research Corporation Physical vapor deposition of low-stress nitrogen-doped tungsten films
WO2016025573A1 (en) 2014-08-15 2016-02-18 Applied Materials, Inc. Method and apparatus of processing wafers with compressive or tensile stress at elevated temperatures in a plasma enhanced chemical vapor deposition system
US9184060B1 (en) 2014-11-14 2015-11-10 Lam Research Corporation Plated metal hard mask for vertical NAND hole etch
US9520295B2 (en) * 2015-02-03 2016-12-13 Lam Research Corporation Metal doping of amorphous carbon and silicon films used as hardmasks in substrate processing systems
US9875890B2 (en) 2015-03-24 2018-01-23 Lam Research Corporation Deposition of metal dielectric film for hardmasks
JP6489951B2 (ja) * 2015-06-12 2019-03-27 東芝メモリ株式会社 半導体装置の製造方法
TWI720106B (zh) * 2016-01-16 2021-03-01 美商應用材料股份有限公司 Pecvd含鎢硬遮罩膜及製造方法
TWI680496B (zh) * 2016-09-13 2019-12-21 美商應用材料股份有限公司 高壓縮/拉伸的翹曲晶圓上的厚鎢硬遮罩膜沉積
JP2018098287A (ja) 2016-12-09 2018-06-21 東芝メモリ株式会社 半導体装置の製造方法

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