JP2020507922A5 - - Google Patents
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- Publication number
- JP2020507922A5 JP2020507922A5 JP2019541270A JP2019541270A JP2020507922A5 JP 2020507922 A5 JP2020507922 A5 JP 2020507922A5 JP 2019541270 A JP2019541270 A JP 2019541270A JP 2019541270 A JP2019541270 A JP 2019541270A JP 2020507922 A5 JP2020507922 A5 JP 2020507922A5
- Authority
- JP
- Japan
- Prior art keywords
- based precursor
- precursor gas
- layer
- gas
- boron
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000007789 gas Substances 0.000 claims 43
- 239000002243 precursor Substances 0.000 claims 28
- 238000000034 method Methods 0.000 claims 14
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims 13
- 229910052796 boron Inorganic materials 0.000 claims 13
- 230000007704 transition Effects 0.000 claims 12
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims 12
- 229910052721 tungsten Inorganic materials 0.000 claims 12
- 239000010937 tungsten Substances 0.000 claims 12
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims 11
- 229910052799 carbon Inorganic materials 0.000 claims 11
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims 3
- 230000015572 biosynthetic process Effects 0.000 claims 3
- 229910052739 hydrogen Inorganic materials 0.000 claims 3
- 239000001257 hydrogen Substances 0.000 claims 3
- 239000000758 substrate Substances 0.000 claims 3
- UONOETXJSWQNOL-UHFFFAOYSA-N tungsten carbide Chemical compound [W+]#[C-] UONOETXJSWQNOL-UHFFFAOYSA-N 0.000 claims 2
- 229910052580 B4C Inorganic materials 0.000 claims 1
- INAHAJYZKVIDIZ-UHFFFAOYSA-N boron carbide Chemical group B12B3B4C32B41 INAHAJYZKVIDIZ-UHFFFAOYSA-N 0.000 claims 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201762453288P | 2017-02-01 | 2017-02-01 | |
| US62/453,288 | 2017-02-01 | ||
| PCT/US2018/013099 WO2018144198A1 (en) | 2017-02-01 | 2018-01-10 | Boron doped tungsten carbide for hardmask applications |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2020507922A JP2020507922A (ja) | 2020-03-12 |
| JP2020507922A5 true JP2020507922A5 (enExample) | 2021-02-25 |
| JP7229929B2 JP7229929B2 (ja) | 2023-02-28 |
Family
ID=62980183
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2019541270A Active JP7229929B2 (ja) | 2017-02-01 | 2018-01-10 | ハードマスク応用向けのホウ素がドープされた炭化タングステン |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US10403502B2 (enExample) |
| JP (1) | JP7229929B2 (enExample) |
| KR (1) | KR102557334B1 (enExample) |
| CN (1) | CN110249410B (enExample) |
| TW (1) | TWI749165B (enExample) |
| WO (1) | WO2018144198A1 (enExample) |
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| WO2021086835A1 (en) * | 2019-11-01 | 2021-05-06 | Applied Materials, Inc. | Reduced defect deposition processes |
| US12027366B2 (en) * | 2019-11-12 | 2024-07-02 | Applied Materials, Inc. | Reduced hydrogen deposition processes |
| US12191115B2 (en) * | 2019-11-25 | 2025-01-07 | Applied Materials, Inc. | Dual RF for controllable film deposition |
| JP7634642B2 (ja) * | 2020-07-19 | 2025-02-21 | アプライド マテリアルズ インコーポレイテッド | ホウ素がドープされたシリコン材料を利用した集積プロセス |
| KR20220012474A (ko) | 2020-07-22 | 2022-02-04 | 주식회사 원익아이피에스 | 박막 증착 방법 및 이를 이용한 반도체 소자의 제조방법 |
| KR20230118568A (ko) * | 2020-12-10 | 2023-08-11 | 도쿄엘렉트론가부시키가이샤 | 플라즈마 처리 방법 및 플라즈마 처리 장치 |
| US20220293416A1 (en) * | 2021-03-12 | 2022-09-15 | Applied Materials, Inc. | Systems and methods for improved carbon adhesion |
| JP2022146092A (ja) * | 2021-03-22 | 2022-10-05 | 東京エレクトロン株式会社 | 基板処理方法及び基板処理装置 |
| US12077852B2 (en) * | 2021-04-26 | 2024-09-03 | Applied Materials, Inc. | Metal-doped boron films |
| CN115702474A (zh) * | 2021-05-14 | 2023-02-14 | 朗姆研究公司 | 高选择性掺杂硬掩模膜 |
| KR20250026848A (ko) * | 2022-06-27 | 2025-02-25 | 램 리써치 코포레이션 | 통합된 높은 종횡비 에칭 |
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| TW202534197A (zh) * | 2023-11-15 | 2025-09-01 | 美商蘭姆研究公司 | 在電漿腔室中碳膜的改質 |
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-
2018
- 2018-01-10 WO PCT/US2018/013099 patent/WO2018144198A1/en not_active Ceased
- 2018-01-10 CN CN201880009510.1A patent/CN110249410B/zh active Active
- 2018-01-10 KR KR1020197025445A patent/KR102557334B1/ko active Active
- 2018-01-10 JP JP2019541270A patent/JP7229929B2/ja active Active
- 2018-01-29 US US15/882,204 patent/US10403502B2/en active Active
- 2018-02-01 TW TW107103621A patent/TWI749165B/zh active
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