CN110249410B - 用于硬掩模应用的硼掺杂碳化钨 - Google Patents

用于硬掩模应用的硼掺杂碳化钨 Download PDF

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CN110249410B
CN110249410B CN201880009510.1A CN201880009510A CN110249410B CN 110249410 B CN110249410 B CN 110249410B CN 201880009510 A CN201880009510 A CN 201880009510A CN 110249410 B CN110249410 B CN 110249410B
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layer
based precursor
boron
hard mask
precursor gas
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CN110249410A (zh
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E·文卡塔苏布磊曼聂
A·B·玛里克
S·辛哈罗伊
T·越泽
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Applied Materials Inc
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Applied Materials Inc
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    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H01L21/0332—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their composition, e.g. multilayer masks, materials
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    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
    • H01L21/0337—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
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    • H01L21/02129—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC the material being boron or phosphorus doped silicon oxides, e.g. BPSG, BSG or PSG
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  • Chemical & Material Sciences (AREA)
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  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
  • Formation Of Insulating Films (AREA)
CN201880009510.1A 2017-02-01 2018-01-10 用于硬掩模应用的硼掺杂碳化钨 Active CN110249410B (zh)

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US201762453288P 2017-02-01 2017-02-01
US62/453,288 2017-02-01
PCT/US2018/013099 WO2018144198A1 (en) 2017-02-01 2018-01-10 Boron doped tungsten carbide for hardmask applications

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JP (1) JP7229929B2 (enExample)
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JP2020035869A (ja) * 2018-08-29 2020-03-05 キオクシア株式会社 マスク材、および半導体装置の製造方法
WO2021086835A1 (en) * 2019-11-01 2021-05-06 Applied Materials, Inc. Reduced defect deposition processes
US12027366B2 (en) * 2019-11-12 2024-07-02 Applied Materials, Inc. Reduced hydrogen deposition processes
US12191115B2 (en) * 2019-11-25 2025-01-07 Applied Materials, Inc. Dual RF for controllable film deposition
JP7634642B2 (ja) * 2020-07-19 2025-02-21 アプライド マテリアルズ インコーポレイテッド ホウ素がドープされたシリコン材料を利用した集積プロセス
KR20220012474A (ko) 2020-07-22 2022-02-04 주식회사 원익아이피에스 박막 증착 방법 및 이를 이용한 반도체 소자의 제조방법
KR20230118568A (ko) * 2020-12-10 2023-08-11 도쿄엘렉트론가부시키가이샤 플라즈마 처리 방법 및 플라즈마 처리 장치
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