JP7229929B2 - ハードマスク応用向けのホウ素がドープされた炭化タングステン - Google Patents

ハードマスク応用向けのホウ素がドープされた炭化タングステン Download PDF

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JP7229929B2
JP7229929B2 JP2019541270A JP2019541270A JP7229929B2 JP 7229929 B2 JP7229929 B2 JP 7229929B2 JP 2019541270 A JP2019541270 A JP 2019541270A JP 2019541270 A JP2019541270 A JP 2019541270A JP 7229929 B2 JP7229929 B2 JP 7229929B2
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based precursor
layer
precursor gas
tungsten
gas
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JP2020507922A (ja
JP2020507922A5 (enExample
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エスワラナンド ベンカタサブラマニアン，
アブヒジット バス マリック，
ロイ， サスミット シンガ
武仁 越澤
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Applied Materials Inc
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Applied Materials Inc
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    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
    • H01L21/0337—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
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    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H01L21/0332—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their composition, e.g. multilayer masks, materials
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
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    • C23C16/32—Carbides
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
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  • Chemical & Material Sciences (AREA)
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  • Condensed Matter Physics & Semiconductors (AREA)
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  • Manufacturing & Machinery (AREA)
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  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
  • Formation Of Insulating Films (AREA)
JP2019541270A 2017-02-01 2018-01-10 ハードマスク応用向けのホウ素がドープされた炭化タングステン Active JP7229929B2 (ja)

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US201762453288P 2017-02-01 2017-02-01
US62/453,288 2017-02-01
PCT/US2018/013099 WO2018144198A1 (en) 2017-02-01 2018-01-10 Boron doped tungsten carbide for hardmask applications

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JP2020507922A5 JP2020507922A5 (enExample) 2021-02-25
JP7229929B2 true JP7229929B2 (ja) 2023-02-28

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US (1) US10403502B2 (enExample)
JP (1) JP7229929B2 (enExample)
KR (1) KR102557334B1 (enExample)
CN (1) CN110249410B (enExample)
TW (1) TWI749165B (enExample)
WO (1) WO2018144198A1 (enExample)

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JP2020035869A (ja) * 2018-08-29 2020-03-05 キオクシア株式会社 マスク材、および半導体装置の製造方法
WO2021086835A1 (en) * 2019-11-01 2021-05-06 Applied Materials, Inc. Reduced defect deposition processes
US12027366B2 (en) * 2019-11-12 2024-07-02 Applied Materials, Inc. Reduced hydrogen deposition processes
US12191115B2 (en) * 2019-11-25 2025-01-07 Applied Materials, Inc. Dual RF for controllable film deposition
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