JP2020202410A - 多層基板 - Google Patents
多層基板 Download PDFInfo
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- JP2020202410A JP2020202410A JP2020161100A JP2020161100A JP2020202410A JP 2020202410 A JP2020202410 A JP 2020202410A JP 2020161100 A JP2020161100 A JP 2020161100A JP 2020161100 A JP2020161100 A JP 2020161100A JP 2020202410 A JP2020202410 A JP 2020202410A
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- holes
- semiconductor substrate
- conductive particles
- anisotropic conductive
- substrate
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Abstract
Description
対向するスルーホールが導電粒子により接続され、該スルーホールが形成されている半導体基板同士が絶縁接着剤により接着している接続構造を有する多層基板を提供する。
第1半導体基板のスルーホールと第2半導体基板のスルーホールが対向し、それらの間に選択的に配置された導電粒子により接続され、
第1半導体基板と第2半導体基板が絶縁接着剤により接着している接続構造を有する多層基板を提供する。
図1は、本発明の一実施態様の多層基板1Aの断面図である。
この多層基板1Aは、配線基板2に3層の半導体基板3A、3B、3Cが積層されたものであり、各半導体基板3A、3B、3Cは、IC等の半導体部品が形成された半導体ウエハである。また、配線基板2にはスルーホール4Xが形成され、各半導体基板3A、3B、3Cにはスルーホール4A、4B、4Cが形成され、配線基板2の表面でスルーホール4Xが露出する部分や、スルーホール4A、4B、4Cが半導体基板の表面に露出する部分には、それぞれ電極パッド9が形成されている。なお、本発明において半導体基板3A、3B、3Cとしては、半導体チップを使用してもよい。また、本発明において、多層基板を構成する半導体基板の積層数に特に制限はない。
ここで、多層基板1Aを構成する配線基板2としては、FR4等のガラスエポキシ基板等を使用することができる。配線基板2として、ICチップもしくはIC形成用のシリコンウェーハーを用いてもよい。配線基板2は、多層基板1Aの用途等に応じて適宜選択される。
半導体基板3A、3B、3Cとしては、スルーホール4A、4B、4Cを有するものであれば特に制限は無く、例えば、シリコン等一般的半導体材料等を使用することができる。
本発明の多層基板には、必要に応じて種々の部品を搭載することができる。
例えば図2に示す多層基板1Bは、各層のスルーホール4X、4A、4B、4Cが直線状に繋がった接続構造を有し、最外層にはスルーホール4Cに接続した放熱用のヒートシンク7を有する。したがって、多層基板1Bは、配線基板2や半導体基板3A、3B、3Cに形成されたIC等の電子部品等から放出される熱をヒートシンク7により効率的に放熱することが可能となる。
本発明の多層基板の製造方法としては、例えば、図2の多層基板1Bの場合、まず、図3Aに示すように、スルーホール4Xを有する配線基板2とスルーホール4Aを有する半導体基板3Aとの間に、接続すべきスルーホール4X、4Aの配置に対応して導電粒子11が絶縁接着剤層12に選択的に配置された本発明の異方導電性フィルム10Aを挟み、異方導電性フィルム10Aを加熱加圧することにより配線基板2と第1半導体基板3Aを異方導電性接続し、図3Bに示す2層の接続構造体を得る。より具体的には、配線基板2と異方導電性フィルム10Aを、接続すべきスルーホール4Xと導電粒子11の配置が合うように位置合わせして重ね、さらに第1半導体基板3Aも同様に位置合わせして重ね合わせ、加熱加圧してこれらを異方導電性接続する。この位置合わせは、異方性導電フィルムのスルーホールに対応する導電粒子(後述するように粒子群が形成されている場合には、その粒子群を構成する導電粒子)と、スルーホールとをCCDなどを用いて観測し、それらを重ね合わせることにより行ってもよい。
本発明の多層基板の製造方法に使用する本発明の異方導電性フィルムは、接続すべきスルーホールの配置に対応して導電粒子11が絶縁接着剤層12に選択的に配置され、好ましくはアライメントマークが形成されたものである。アライメントマークとしては、導電粒子の配置により形成したものが好ましい。これにより、アライメントマークを明確に検出することができ、かつ異方導電性フィルムにアライメントマークをつけるための新たな工程の追加が不要となる。一方、アライメントマークは、レーザー照射などで絶縁接着剤層12を部分的に硬化させることにより形成してもよい。これによりアライメントマークを付する位置の変更が容易となる。
異方導電性フィルム10に使用する導電粒子11としては、公知の異方導電性フィルムに用いられているものの中から適宜選択して使用することができる。例えば、ハンダ、ニッケル、コバルト、銀、銅、金、パラジウムなどの金属粒子、金属被覆樹脂粒子などが挙げられる。金属被覆樹脂粒子の金属被覆は、無電解メッキ法、スパッタリング法等の公知の金属膜形成方法を利用して形成することができる。金属被覆は、コア樹脂材の表面に形成されていれば特に制限はない。コア樹脂材は、樹脂のみから形成してもよく、導通信頼性の向上のために導電微粒子を含有させたものとしてもよい。
異方導電性フィルムにおいて、導電粒子11の配置、粒子径及び種類は、スルーホール同士の接合の安定性の点からスルーホールの開口径等に応じて適宜選択される。
異方導電性フィルムを形成する絶縁接着剤層12としては、公知の異方導電性フィルムで使用される絶縁性樹脂層を適宜採用することができる。例えば、アクリレート化合物と光ラジカル重合開始剤とを含む光ラジカル重合型樹脂層、アクリレート化合物と熱ラジカル重合開始剤とを含む熱ラジカル重合型樹脂層、エポキシ化合物と熱カチオン重合開始剤とを含む熱カチオン重合型樹脂層、エポキシ化合物と熱アニオン重合開始剤とを含む熱アニオン重合型樹脂層等を使用することができる。また、これらの樹脂層は、必要に応じて、それぞれ重合したものとすることができる。また、絶縁接着剤層12を、複数の樹脂層から形成してもよい。
上述した異方導電性フィルム10では、所定の位置以外に存在する導電粒子はほとんど存在しない。一方、所定の位置に存在しても対向するスルーホール4A、4Bに捕捉されない導電粒子は存在しえる。したがって、この異方導電性フィルム10を半導体基板3A、3Bの接続に使用した後において、対向する半導体基板3A、3Bの間で、スルーホール4A、4Bに捕捉されていない導電粒子11の数は、対向する半導体基板3A、3Bの間に存在する導電粒子11の総数の好ましくは5%以下となる。
実施例1〜6、比較例1
(1)半導体基板
多層基板を構成する半導体基板3として、外形が7mm□、厚み100μmの矩形で、図7に示すように、クロム製電極パッドを有するスルーホール4がペリフェラル配置(φ30μm、85μmピッチ、280ピン)に形成されているものを用意した。
半導体基板には、アライメントマークとして200μm□の四角形マークが形成されている。
表1に示すように、表1に示す粒子径の導電粒子(微粉半田粉、三井金属鉱業(株))を、絶縁接着剤層にランダムに分散させるか(比較例1、粒子密度60個/mm2)、又は半導体基板のスルーホール4の配置に対応させて配置した(実施例1〜6、85μmピッチ、280箇所)異方導電性フィルムを製造した。
また、実施例1〜6では、アライメントマークを導電粒子により形成した。この場合、導電粒子の配列の輪郭が半導体基板3のアライメントマークの輪郭と略一致するようにした。
(1)で用意した半導体基板を、(2)で製造した異方導電性フィルムを用いて表1に示した積層数で重ね合わせて押圧し、さらに加熱加圧(180℃、40MPa、20秒)することにより多層基板を製造した。
得られた多層基板について、(a)充填の評価、(b)溶融の評価、を次のように行った。これらの結果を表1に示す。
半導体基板を重ね合わせ、押圧した状態で、対向するスルーホールの間に導電粒子が存在する場合をOK、存在しない場合をNGとした。
多層基板の厚さ方向の断面を観察し、対向するスルーホールが導電粒子で接続され、さらにスルーホールの内壁に沿って導電粒子の溶融物が進入している場合をA、対向するスルーホールが導電粒子で接続されているが、スルーホールの内壁にそって導電粒子の溶融物が進入していない場合をBとした。
2 配線基板
3、3A、3B、3C 半導体基板
4、4A、4B、4C スルーホール
4a メッキ膜
4h 貫通孔
5 金属
6 貫通電極
7 ヒートシンク
8 ハンダボール
9 電極パッド
10、10A、10B 異方導電性フィルム
11、11p、11q 導電粒子
11a 粒子群
12 絶縁接着剤又は絶縁接着剤層
Claims (14)
- 内表面にメッキ膜が形成された貫通孔(以下、スルーホールという)を有する半導体基板が積層されている多層基板であって、
多層基板の平面視において、スルーホールが対向する位置に導電粒子が選択的に存在し、
対向するスルーホールが導電粒子により接続され、該スルーホールが形成されている半導体基板同士が絶縁接着剤により接着している接続構造を有する多層基板。 - スルーホールを有する第1半導体基板と、スルーホールを有する第2半導体基板とが積層されている多層基板であって、第1半導体基板のスルーホールと第2半導体基板のスルーホールが、それらの間に選択的に配置された導電粒子により接続されている請求項1記載の多層基板。
- スルーホールを有する第3半導体基板が第2半導体基板に積層されており、
第1半導体基板のスルーホールと接続している第2半導体基板のスルーホールと第3半導体基板のスルーホールとが対向し、それらの間に選択的に配置された導電粒子により接続され、
第2半導体基板と第3半導体基板が絶縁接着剤により接着している接続構造を有する請求項2記載の多層基板。 - スルーホール内に導電粒子が進入している請求項1〜3のいずれかに記載の多層基板。
- 多層基板の最外層にヒートシンクを有し、ヒートシンクと、導電粒子で接続されることにより多層基板の積層方向に繋がったスルーホールとが接続している請求項1〜4のいずれかに記載の多層基板。
- 半導体基板に形成されたスルーホール同士を対向させて接合する多層基板の製造方法であって、スルーホールが対向する部分の多層基板の平面視における位置に対応して導電粒子が絶縁接着剤層に選択的に配置された異方導電性フィルムを、スルーホールを有する半導体基板同士の間に挟み、該異方導電性フィルムを加熱加圧することによりこれら半導体基板を異方導電性接続する多層基板の製造方法。
- スルーホールを有する第1半導体基板と、スルーホールを有する第2半導体基板を、それらのスルーホール同士を対向させて接合する多層基板の製造方法であって、第1半導体基板と第2半導体基板との間に、スルーホールの配置に対応して導電粒子が絶縁接着剤層に選択的に配置された異方導電性フィルムを挟み、該異方導電性フィルムを加熱加圧することにより第1半導体基板と第2半導体基板を異方導電性接続する請求項6記載の多層基板の製造方法。
- スルーホールを有する第3半導体基板を第2半導体基板に積層し、第1半導体基板のスルーホールと異方導電性接続した第2半導体基板のスルーホールと、第3半導体基板のスルーホールとの間に、スルーホールの配置に対応して導電粒子が絶縁接着剤層に選択的に配置された異方導電性フィルムを挟み、該異方導電性フィルムを加熱加圧することにより第2半導体基板と第3半導体基板を異方導電性接続する請求項7記載の多層基板の製造方法。
- 絶縁接着剤層と、該絶縁接着剤層に配置された導電粒子を含む異方導電性フィルムであって、異方導電性フィルムで接続するスルーホールの配置に対応して導電粒子が絶縁接着剤層に選択的に配置されている異方導電性フィルム。
- 絶縁接着剤層と、該絶縁接着剤層に配置された導電粒子を含む異方導電性フィルムであって、3個以上の導電粒子が近接した粒子群が形成されており、粒子群に、少なくとも大きさ又は種類が異なる複数の導電粒子が含まれている異方導電性フィルム。
- 粒子群において、複数の導電粒子が異方導電性フィルムのフィルム厚方向に重畳している請求項10記載の異方導電性フィルム。
- 粒子群において、複数の導電粒子が異方導電性フィルムの面方向に配置されている請求項10又は11記載の異方導電性フィルム。
- 粒子群に含まれる導電粒子の少なくとも一部が絶縁接着剤層から露出している請求項10〜12のいずれかに記載の異方導電性フィルム。
- 粒子群が、異方導電性フィルムで接続するスルーホールの配置に対応して配置されている請求項10〜13のいずれかに記載の異方導電性フィルム。
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