JP2020167362A5 - - Google Patents
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- Publication number
- JP2020167362A5 JP2020167362A5 JP2019142884A JP2019142884A JP2020167362A5 JP 2020167362 A5 JP2020167362 A5 JP 2020167362A5 JP 2019142884 A JP2019142884 A JP 2019142884A JP 2019142884 A JP2019142884 A JP 2019142884A JP 2020167362 A5 JP2020167362 A5 JP 2020167362A5
- Authority
- JP
- Japan
- Prior art keywords
- layer
- insulating film
- semiconductor layer
- insulating
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 claims 41
- 229910052738 indium Inorganic materials 0.000 claims 13
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims 13
- 229910044991 metal oxide Inorganic materials 0.000 claims 9
- 150000004706 metal oxides Chemical class 0.000 claims 9
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims 8
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims 8
- 229910052733 gallium Inorganic materials 0.000 claims 8
- 229910052725 zinc Inorganic materials 0.000 claims 8
- 239000011701 zinc Substances 0.000 claims 8
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 5
- 229910052760 oxygen Inorganic materials 0.000 claims 5
- 239000001301 oxygen Substances 0.000 claims 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims 2
- 229910052581 Si3N4 Inorganic materials 0.000 claims 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 1
- 230000015572 biosynthetic process Effects 0.000 claims 1
- 229910052757 nitrogen Inorganic materials 0.000 claims 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims 1
- 229910052814 silicon oxide Inorganic materials 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2024049068A JP2024086738A (ja) | 2018-08-03 | 2024-03-26 | 半導体装置 |
Applications Claiming Priority (8)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2018146787 | 2018-08-03 | ||
| JP2018146787 | 2018-08-03 | ||
| JP2018175352 | 2018-09-19 | ||
| JP2018175352 | 2018-09-19 | ||
| JP2018201126 | 2018-10-25 | ||
| JP2018201126 | 2018-10-25 | ||
| JP2019061174 | 2019-03-27 | ||
| JP2019061174 | 2019-03-27 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2024049068A Division JP2024086738A (ja) | 2018-08-03 | 2024-03-26 | 半導体装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2020167362A JP2020167362A (ja) | 2020-10-08 |
| JP2020167362A5 true JP2020167362A5 (enExample) | 2022-07-25 |
| JP7462391B2 JP7462391B2 (ja) | 2024-04-05 |
Family
ID=69231059
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2019142884A Active JP7462391B2 (ja) | 2018-08-03 | 2019-08-02 | 半導体装置 |
| JP2024049068A Withdrawn JP2024086738A (ja) | 2018-08-03 | 2024-03-26 | 半導体装置 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2024049068A Withdrawn JP2024086738A (ja) | 2018-08-03 | 2024-03-26 | 半導体装置 |
Country Status (6)
| Country | Link |
|---|---|
| US (3) | US11637208B2 (enExample) |
| JP (2) | JP7462391B2 (enExample) |
| KR (1) | KR20210035207A (enExample) |
| CN (2) | CN112514079B (enExample) |
| TW (1) | TW202032242A (enExample) |
| WO (1) | WO2020026081A1 (enExample) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111725238B (zh) * | 2019-03-19 | 2023-08-15 | 群创光电股份有限公司 | 具有晶体管元件的工作模块 |
| US11605723B2 (en) * | 2020-07-28 | 2023-03-14 | Micron Technology, Inc. | Transistors and memory arrays |
| US12432980B2 (en) | 2021-06-25 | 2025-09-30 | Boe Technology Group Co., Ltd. | Oxide thin film transistor and preparation method thereof, and display device |
| CN113809163B (zh) * | 2021-09-17 | 2023-11-24 | 武汉天马微电子有限公司 | 金属氧化物晶体管、显示面板及显示装置 |
| JPWO2023139447A1 (enExample) * | 2022-01-21 | 2023-07-27 | ||
| CN114582893A (zh) * | 2022-03-10 | 2022-06-03 | 广州华星光电半导体显示技术有限公司 | 阵列基板、阵列基板的制作方法以及显示装置 |
| KR20240107689A (ko) * | 2022-12-30 | 2024-07-09 | 엘지디스플레이 주식회사 | 표시 장치 |
Family Cites Families (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008218626A (ja) | 2007-03-02 | 2008-09-18 | Mitsubishi Electric Corp | Ｔｆｔアレイ基板及びその製造方法 |
| US9490368B2 (en) | 2010-05-20 | 2016-11-08 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method of the same |
| KR20140003315A (ko) * | 2011-06-08 | 2014-01-09 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 스퍼터링 타겟, 스퍼터링 타겟의 제조 방법 및 박막의 형성 방법 |
| TWI580047B (zh) | 2011-12-23 | 2017-04-21 | 半導體能源研究所股份有限公司 | 半導體裝置 |
| CN107591316B (zh) | 2012-05-31 | 2021-06-08 | 株式会社半导体能源研究所 | 半导体装置 |
| KR102227591B1 (ko) | 2012-10-17 | 2021-03-15 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
| TWI644434B (zh) * | 2013-04-29 | 2018-12-11 | 日商半導體能源研究所股份有限公司 | 半導體裝置及其製造方法 |
| US9443876B2 (en) | 2014-02-05 | 2016-09-13 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, display device including the semiconductor device, display module including the display device, and electronic device including the semiconductor device, the display device, and the display module |
| US10361290B2 (en) * | 2014-03-14 | 2019-07-23 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device comprising adding oxygen to buffer film and insulating film |
| TWI686874B (zh) | 2014-12-26 | 2020-03-01 | 日商半導體能源研究所股份有限公司 | 半導體裝置、顯示裝置、顯示模組、電子裝置、氧化物及氧化物的製造方法 |
| US9837547B2 (en) | 2015-05-22 | 2017-12-05 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device comprising oxide conductor and display device including the semiconductor device |
| US20170104090A1 (en) * | 2015-10-12 | 2017-04-13 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
| JP2017123427A (ja) | 2016-01-08 | 2017-07-13 | 株式会社ジャパンディスプレイ | 薄膜トランジスタ |
| WO2017178912A1 (en) * | 2016-04-13 | 2017-10-19 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and display device including the semiconductor device |
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2019
- 2019-07-19 TW TW108125721A patent/TW202032242A/zh unknown
- 2019-07-24 CN CN201980050350.XA patent/CN112514079B/zh active Active
- 2019-07-24 US US17/262,793 patent/US11637208B2/en active Active
- 2019-07-24 WO PCT/IB2019/056307 patent/WO2020026081A1/en not_active Ceased
- 2019-07-24 KR KR1020217003947A patent/KR20210035207A/ko active Pending
- 2019-07-24 CN CN202411277545.7A patent/CN118866977A/zh active Pending
- 2019-08-02 JP JP2019142884A patent/JP7462391B2/ja active Active
-
2023
- 2023-04-10 US US18/132,527 patent/US12317544B2/en active Active
-
2024
- 2024-03-26 JP JP2024049068A patent/JP2024086738A/ja not_active Withdrawn
-
2025
- 2025-04-30 US US19/194,553 patent/US20250324757A1/en active Pending