TW202032242A - 半導體裝置 - Google Patents

半導體裝置 Download PDF

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Publication number
TW202032242A
TW202032242A TW108125721A TW108125721A TW202032242A TW 202032242 A TW202032242 A TW 202032242A TW 108125721 A TW108125721 A TW 108125721A TW 108125721 A TW108125721 A TW 108125721A TW 202032242 A TW202032242 A TW 202032242A
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TW
Taiwan
Prior art keywords
layer
insulating film
film
insulating
semiconductor layer
Prior art date
Application number
TW108125721A
Other languages
English (en)
Chinese (zh)
Inventor
肥塚純一
岡崎健一
保坂泰靖
生内俊光
中澤安孝
保本清治
山崎舜平
Original Assignee
日商半導體能源研究所股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
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Application filed by 日商半導體能源研究所股份有限公司 filed Critical 日商半導體能源研究所股份有限公司
Publication of TW202032242A publication Critical patent/TW202032242A/zh

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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
    • H10D86/423—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/12—Light sources with substantially two-dimensional [2D] radiating surfaces
    • H05B33/14—Light sources with substantially two-dimensional [2D] radiating surfaces characterised by the chemical or physical composition or the arrangement of the electroluminescent material, or by the simultaneous addition of the electroluminescent material in or onto the light source
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/12—Light sources with substantially two-dimensional [2D] radiating surfaces
    • H05B33/22—Light sources with substantially two-dimensional [2D] radiating surfaces characterised by the chemical or physical composition or the arrangement of auxiliary dielectric or reflective layers
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/12—Light sources with substantially two-dimensional [2D] radiating surfaces
    • H05B33/26—Light sources with substantially two-dimensional [2D] radiating surfaces characterised by the composition or arrangement of the conductive material used as an electrode
    • H05B33/28—Light sources with substantially two-dimensional [2D] radiating surfaces characterised by the composition or arrangement of the conductive material used as an electrode of translucent electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6733—Multi-gate TFTs
    • H10D30/6734—Multi-gate TFTs having gate electrodes arranged on both top and bottom sides of the channel, e.g. dual-gate TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
    • H10D30/6739—Conductor-insulator-semiconductor electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6758—Thin-film transistors [TFT] characterised by the insulating substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
    • H10K77/10—Substrates, e.g. flexible substrates
    • H10K77/111—Flexible substrates

Landscapes

  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Thin Film Transistor (AREA)
  • Liquid Crystal (AREA)
  • Electroluminescent Light Sources (AREA)
TW108125721A 2018-08-03 2019-07-19 半導體裝置 TW202032242A (zh)

Applications Claiming Priority (8)

Application Number Priority Date Filing Date Title
JP2018146787 2018-08-03
JP2018-146787 2018-08-03
JP2018-175352 2018-09-19
JP2018175352 2018-09-19
JP2018-201126 2018-10-25
JP2018201126 2018-10-25
JP2019-061174 2019-03-27
JP2019061174 2019-03-27

Publications (1)

Publication Number Publication Date
TW202032242A true TW202032242A (zh) 2020-09-01

Family

ID=69231059

Family Applications (1)

Application Number Title Priority Date Filing Date
TW108125721A TW202032242A (zh) 2018-08-03 2019-07-19 半導體裝置

Country Status (6)

Country Link
US (3) US11637208B2 (enExample)
JP (3) JP7462391B2 (enExample)
KR (1) KR20210035207A (enExample)
CN (2) CN118866977A (enExample)
TW (1) TW202032242A (enExample)
WO (1) WO2020026081A1 (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111725238B (zh) * 2019-03-19 2023-08-15 群创光电股份有限公司 具有晶体管元件的工作模块
US11605723B2 (en) * 2020-07-28 2023-03-14 Micron Technology, Inc. Transistors and memory arrays
US12224352B2 (en) * 2021-04-22 2025-02-11 Taiwan Semiconductor Manufacturing Company Limited Transistor including an active region and methods for forming the same
US12432980B2 (en) 2021-06-25 2025-09-30 Boe Technology Group Co., Ltd. Oxide thin film transistor and preparation method thereof, and display device
CN113809163B (zh) * 2021-09-17 2023-11-24 武汉天马微电子有限公司 金属氧化物晶体管、显示面板及显示装置
KR20240135790A (ko) * 2022-01-21 2024-09-12 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 제작 방법
CN114582893B (zh) * 2022-03-10 2026-06-30 广州华星光电半导体显示技术有限公司 阵列基板、阵列基板的制作方法以及显示装置
KR20240107689A (ko) * 2022-12-30 2024-07-09 엘지디스플레이 주식회사 표시 장치

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008218626A (ja) * 2007-03-02 2008-09-18 Mitsubishi Electric Corp Ｔｆｔアレイ基板及びその製造方法
US9490368B2 (en) 2010-05-20 2016-11-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method of the same
CN107419225B (zh) * 2011-06-08 2020-08-04 株式会社半导体能源研究所 溅射靶材、溅射靶材的制造方法及薄膜形成方法
US8796683B2 (en) 2011-12-23 2014-08-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2013180040A1 (en) 2012-05-31 2013-12-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2014061535A1 (en) 2012-10-17 2014-04-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
TWI644434B (zh) * 2013-04-29 2018-12-11 日商半導體能源研究所股份有限公司 半導體裝置及其製造方法
US9443876B2 (en) 2014-02-05 2016-09-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, display device including the semiconductor device, display module including the display device, and electronic device including the semiconductor device, the display device, and the display module
JP6559444B2 (ja) 2014-03-14 2019-08-14 株式会社半導体エネルギー研究所 半導体装置の作製方法
TWI686874B (zh) 2014-12-26 2020-03-01 日商半導體能源研究所股份有限公司 半導體裝置、顯示裝置、顯示模組、電子裝置、氧化物及氧化物的製造方法
US9837547B2 (en) * 2015-05-22 2017-12-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising oxide conductor and display device including the semiconductor device
JP2017076788A (ja) 2015-10-12 2017-04-20 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP2017123427A (ja) 2016-01-08 2017-07-13 株式会社ジャパンディスプレイ 薄膜トランジスタ
CN109075206B (zh) * 2016-04-13 2022-08-16 株式会社半导体能源研究所 半导体装置及包括该半导体装置的显示装置

Also Published As

Publication number Publication date
WO2020026081A1 (en) 2020-02-06
JP2025181971A (ja) 2025-12-11
US11637208B2 (en) 2023-04-25
JP7462391B2 (ja) 2024-04-05
CN118866977A (zh) 2024-10-29
US20230317856A1 (en) 2023-10-05
CN112514079A (zh) 2021-03-16
JP2020167362A (ja) 2020-10-08
CN112514079B (zh) 2024-10-15
US20250324757A1 (en) 2025-10-16
US12317544B2 (en) 2025-05-27
KR20210035207A (ko) 2021-03-31
US20210167212A1 (en) 2021-06-03
JP2024086738A (ja) 2024-06-28

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