JP7462391B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP7462391B2
JP7462391B2 JP2019142884A JP2019142884A JP7462391B2 JP 7462391 B2 JP7462391 B2 JP 7462391B2 JP 2019142884 A JP2019142884 A JP 2019142884A JP 2019142884 A JP2019142884 A JP 2019142884A JP 7462391 B2 JP7462391 B2 JP 7462391B2
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Prior art keywords
layer
film
semiconductor layer
metal oxide
insulating
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English (en)
Japanese (ja)
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JP2020167362A (ja
JP2020167362A5 (enExample
Inventor
純一 肥塚
健一 岡崎
泰靖 保坂
俊光 生内
安孝 中澤
清治 保本
舜平 山崎
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Publication of JP2020167362A publication Critical patent/JP2020167362A/ja
Publication of JP2020167362A5 publication Critical patent/JP2020167362A5/ja
Priority to JP2024049068A priority Critical patent/JP2024086738A/ja
Application granted granted Critical
Publication of JP7462391B2 publication Critical patent/JP7462391B2/ja
Priority to JP2025157561A priority patent/JP2025181971A/ja
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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
    • H10D86/423—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/12—Light sources with substantially two-dimensional [2D] radiating surfaces
    • H05B33/14—Light sources with substantially two-dimensional [2D] radiating surfaces characterised by the chemical or physical composition or the arrangement of the electroluminescent material, or by the simultaneous addition of the electroluminescent material in or onto the light source
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/12—Light sources with substantially two-dimensional [2D] radiating surfaces
    • H05B33/22—Light sources with substantially two-dimensional [2D] radiating surfaces characterised by the chemical or physical composition or the arrangement of auxiliary dielectric or reflective layers
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/12—Light sources with substantially two-dimensional [2D] radiating surfaces
    • H05B33/26—Light sources with substantially two-dimensional [2D] radiating surfaces characterised by the composition or arrangement of the conductive material used as an electrode
    • H05B33/28—Light sources with substantially two-dimensional [2D] radiating surfaces characterised by the composition or arrangement of the conductive material used as an electrode of translucent electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6733—Multi-gate TFTs
    • H10D30/6734—Multi-gate TFTs having gate electrodes arranged on both top and bottom sides of the channel, e.g. dual-gate TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
    • H10D30/6739—Conductor-insulator-semiconductor electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6758—Thin-film transistors [TFT] characterised by the insulating substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
    • H10K77/10—Substrates, e.g. flexible substrates
    • H10K77/111—Flexible substrates

Landscapes

  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Thin Film Transistor (AREA)
  • Liquid Crystal (AREA)
  • Electroluminescent Light Sources (AREA)
JP2019142884A 2018-08-03 2019-08-02 半導体装置 Active JP7462391B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2024049068A JP2024086738A (ja) 2018-08-03 2024-03-26 半導体装置
JP2025157561A JP2025181971A (ja) 2018-08-03 2025-09-23 半導体装置

Applications Claiming Priority (8)

Application Number Priority Date Filing Date Title
JP2018146787 2018-08-03
JP2018146787 2018-08-03
JP2018175352 2018-09-19
JP2018175352 2018-09-19
JP2018201126 2018-10-25
JP2018201126 2018-10-25
JP2019061174 2019-03-27
JP2019061174 2019-03-27

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2024049068A Division JP2024086738A (ja) 2018-08-03 2024-03-26 半導体装置

Publications (3)

Publication Number Publication Date
JP2020167362A JP2020167362A (ja) 2020-10-08
JP2020167362A5 JP2020167362A5 (enExample) 2022-07-25
JP7462391B2 true JP7462391B2 (ja) 2024-04-05

Family

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Family Applications (3)

Application Number Title Priority Date Filing Date
JP2019142884A Active JP7462391B2 (ja) 2018-08-03 2019-08-02 半導体装置
JP2024049068A Withdrawn JP2024086738A (ja) 2018-08-03 2024-03-26 半導体装置
JP2025157561A Pending JP2025181971A (ja) 2018-08-03 2025-09-23 半導体装置

Family Applications After (2)

Application Number Title Priority Date Filing Date
JP2024049068A Withdrawn JP2024086738A (ja) 2018-08-03 2024-03-26 半導体装置
JP2025157561A Pending JP2025181971A (ja) 2018-08-03 2025-09-23 半導体装置

Country Status (6)

Country Link
US (3) US11637208B2 (enExample)
JP (3) JP7462391B2 (enExample)
KR (1) KR20210035207A (enExample)
CN (2) CN118866977A (enExample)
TW (1) TW202032242A (enExample)
WO (1) WO2020026081A1 (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111725238B (zh) * 2019-03-19 2023-08-15 群创光电股份有限公司 具有晶体管元件的工作模块
US11605723B2 (en) * 2020-07-28 2023-03-14 Micron Technology, Inc. Transistors and memory arrays
US12224352B2 (en) * 2021-04-22 2025-02-11 Taiwan Semiconductor Manufacturing Company Limited Transistor including an active region and methods for forming the same
US12432980B2 (en) 2021-06-25 2025-09-30 Boe Technology Group Co., Ltd. Oxide thin film transistor and preparation method thereof, and display device
CN113809163B (zh) * 2021-09-17 2023-11-24 武汉天马微电子有限公司 金属氧化物晶体管、显示面板及显示装置
KR20240135790A (ko) * 2022-01-21 2024-09-12 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 제작 방법
CN114582893B (zh) * 2022-03-10 2026-06-30 广州华星光电半导体显示技术有限公司 阵列基板、阵列基板的制作方法以及显示装置
KR20240107689A (ko) * 2022-12-30 2024-07-09 엘지디스플레이 주식회사 표시 장치

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008218626A (ja) 2007-03-02 2008-09-18 Mitsubishi Electric Corp Ｔｆｔアレイ基板及びその製造方法
JP2012004549A (ja) 2010-05-20 2012-01-05 Semiconductor Energy Lab Co Ltd 半導体装置及び半導体装置の作製方法
JP2015188079A (ja) 2014-03-14 2015-10-29 株式会社半導体エネルギー研究所 半導体装置の作製方法
US20160343866A1 (en) 2015-05-22 2016-11-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and display device including semiconductor device
JP2017076788A (ja) 2015-10-12 2017-04-20 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP2017076768A (ja) 2014-12-26 2017-04-20 株式会社半導体エネルギー研究所 半導体装置、表示装置、表示モジュール、電子機器、酸化物および酸化物の作製方法
JP2017195369A (ja) 2016-04-13 2017-10-26 株式会社半導体エネルギー研究所 半導体装置または当該半導体装置を有する表示装置

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107419225B (zh) * 2011-06-08 2020-08-04 株式会社半导体能源研究所 溅射靶材、溅射靶材的制造方法及薄膜形成方法
US8796683B2 (en) 2011-12-23 2014-08-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2013180040A1 (en) 2012-05-31 2013-12-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2014061535A1 (en) 2012-10-17 2014-04-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
TWI644434B (zh) * 2013-04-29 2018-12-11 日商半導體能源研究所股份有限公司 半導體裝置及其製造方法
US9443876B2 (en) 2014-02-05 2016-09-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, display device including the semiconductor device, display module including the display device, and electronic device including the semiconductor device, the display device, and the display module
JP2017123427A (ja) 2016-01-08 2017-07-13 株式会社ジャパンディスプレイ 薄膜トランジスタ

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008218626A (ja) 2007-03-02 2008-09-18 Mitsubishi Electric Corp Ｔｆｔアレイ基板及びその製造方法
JP2012004549A (ja) 2010-05-20 2012-01-05 Semiconductor Energy Lab Co Ltd 半導体装置及び半導体装置の作製方法
JP2015188079A (ja) 2014-03-14 2015-10-29 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP2017076768A (ja) 2014-12-26 2017-04-20 株式会社半導体エネルギー研究所 半導体装置、表示装置、表示モジュール、電子機器、酸化物および酸化物の作製方法
US20160343866A1 (en) 2015-05-22 2016-11-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and display device including semiconductor device
JP2017028252A (ja) 2015-05-22 2017-02-02 株式会社半導体エネルギー研究所 半導体装置、該半導体装置を有する表示装置
JP2017076788A (ja) 2015-10-12 2017-04-20 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP2017195369A (ja) 2016-04-13 2017-10-26 株式会社半導体エネルギー研究所 半導体装置または当該半導体装置を有する表示装置

Also Published As

Publication number Publication date
WO2020026081A1 (en) 2020-02-06
JP2025181971A (ja) 2025-12-11
US11637208B2 (en) 2023-04-25
CN118866977A (zh) 2024-10-29
US20230317856A1 (en) 2023-10-05
TW202032242A (zh) 2020-09-01
CN112514079A (zh) 2021-03-16
JP2020167362A (ja) 2020-10-08
CN112514079B (zh) 2024-10-15
US20250324757A1 (en) 2025-10-16
US12317544B2 (en) 2025-05-27
KR20210035207A (ko) 2021-03-31
US20210167212A1 (en) 2021-06-03
JP2024086738A (ja) 2024-06-28

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