JP2020120121A - 半導体装置および製造方法 - Google Patents
半導体装置および製造方法 Download PDFInfo
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- JP2020120121A JP2020120121A JP2020071516A JP2020071516A JP2020120121A JP 2020120121 A JP2020120121 A JP 2020120121A JP 2020071516 A JP2020071516 A JP 2020071516A JP 2020071516 A JP2020071516 A JP 2020071516A JP 2020120121 A JP2020120121 A JP 2020120121A
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Abstract
Description
特許文献1 特開2015−185742号公報
y=−0.0169x4+0.1664x3−0.6161x2+1.6157x+5.2681 ・・・(1)
Claims (6)
- 半導体基板と、
前記半導体基板に設けられ、前記半導体基板の上面側に第1導電型のエミッタ領域を有し、前記半導体基板の下面側に第2導電型のコレクタ領域を有するトランジスタ部と、
前記半導体基板に設けられ、前記半導体基板の下面側に第1導電型のカソード領域を有するダイオード部と、
前記半導体基板の上面の上方に設けられたエミッタ電極と、
少なくとも一部が前記エミッタ電極の上方に設けられている保護膜と
を備え、
前記カソード領域は、前記半導体基板の上面と平行な面において前記保護膜とは重ならない半導体装置。 - 前記ダイオード部には、前記半導体基板の上面側に上面側ライフタイム低減領域が設けられており、
前記上面側ライフタイム低減領域は、前記半導体基板の上面と平行な面において前記カソード領域全体と重なり、且つ、前記保護膜と重ならない
請求項1に記載の半導体装置。 - 前記半導体基板の上面と平行な面において、前記保護膜と前記上面側ライフタイム低減領域の距離が10μm以上である
請求項2に記載の半導体装置。 - 前記半導体基板の上面と平行な面において、前記トランジスタ部および前記ダイオード部の少なくとも一方を含む素子領域どうしの間に配置されたゲートランナー部を更に備え、
前記保護膜は、前記ゲートランナー部の上方にも設けられており、
前記上面側ライフタイム低減領域は、前記半導体基板の上面と平行な面において前記ゲートランナー部の上方の前記保護膜とも重ならない
請求項2または3に記載の半導体装置。 - 請求項2から4のいずれか一項に記載の半導体装置を製造する製造方法であって、
前記半導体基板の上面側からライフタイムキラーを導入して、前記上面側ライフタイム低減領域を形成する製造方法。 - 前記半導体基板の上面の上方に前記エミッタ電極を形成した後に、前記ライフタイムキラーを前記半導体基板の上面側から導入し、
前記ライフタイムキラーを導入した後に、前記エミッタ電極の上面にめっき層を形成する
請求項5に記載の製造方法。
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Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE112023000171T5 (de) | 2022-03-16 | 2024-04-18 | Fuji Electric Co., Ltd. | Halbleitervorrichtung |
WO2024127764A1 (ja) * | 2022-12-12 | 2024-06-20 | 株式会社日立パワーデバイス | 半導体装置 |
WO2024135053A1 (ja) * | 2022-12-22 | 2024-06-27 | 株式会社日立パワーデバイス | 半導体装置 |
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WO2016051973A1 (ja) * | 2014-10-03 | 2016-04-07 | 富士電機株式会社 | 半導体装置および半導体装置の製造方法 |
JP6854654B2 (ja) * | 2017-01-26 | 2021-04-07 | ローム株式会社 | 半導体装置 |
JP6804379B2 (ja) * | 2017-04-24 | 2020-12-23 | 三菱電機株式会社 | 半導体装置 |
US11393812B2 (en) * | 2017-12-28 | 2022-07-19 | Fuji Electric Co., Ltd. | Semiconductor device and method of manufacturing semiconductor device |
WO2019176327A1 (ja) | 2018-03-15 | 2019-09-19 | 富士電機株式会社 | 半導体装置 |
JP6958740B2 (ja) | 2018-08-14 | 2021-11-02 | 富士電機株式会社 | 半導体装置および製造方法 |
JP2020031155A (ja) * | 2018-08-23 | 2020-02-27 | トヨタ自動車株式会社 | 半導体装置 |
JP7268330B2 (ja) | 2018-11-05 | 2023-05-08 | 富士電機株式会社 | 半導体装置および製造方法 |
JP7173172B2 (ja) * | 2019-02-07 | 2022-11-16 | 富士電機株式会社 | 半導体装置および半導体モジュール |
JP7211516B2 (ja) | 2019-07-12 | 2023-01-24 | 富士電機株式会社 | 半導体装置 |
US11145644B2 (en) * | 2019-08-13 | 2021-10-12 | Semiconductor Components Industries, Llc | Power device with carrier lifetime zone |
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JP2022144504A (ja) * | 2021-03-19 | 2022-10-03 | 株式会社東芝 | 半導体装置及びその製造方法 |
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Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008192737A (ja) * | 2007-02-02 | 2008-08-21 | Denso Corp | 半導体装置 |
JP2009111188A (ja) * | 2007-10-30 | 2009-05-21 | Denso Corp | 半導体装置 |
JP2012033897A (ja) * | 2010-07-01 | 2012-02-16 | Denso Corp | 半導体装置 |
WO2015093086A1 (ja) * | 2013-12-17 | 2015-06-25 | トヨタ自動車株式会社 | 半導体装置 |
WO2016098199A1 (ja) * | 2014-12-17 | 2016-06-23 | 三菱電機株式会社 | 半導体装置 |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5070941B2 (ja) * | 2007-05-30 | 2012-11-14 | 株式会社デンソー | 半導体装置 |
JP2010147381A (ja) * | 2008-12-22 | 2010-07-01 | Denso Corp | 半導体装置の製造方法 |
DE112009004065B4 (de) * | 2009-09-14 | 2019-02-21 | Toyota Jidosha Kabushiki Kaisha | Halbleitereinrichtung mit einem Halbleitersubstrat einschließlich eines Diodenbereichs und eines IGBT-Bereichs |
JP5900546B2 (ja) * | 2010-07-01 | 2016-04-06 | 株式会社デンソー | 半導体装置 |
US8748236B2 (en) * | 2010-11-10 | 2014-06-10 | Toyota Jidosha Kabushiki Kaisha | Method for manufacturing semiconductor device |
JP6107767B2 (ja) * | 2013-12-27 | 2017-04-05 | トヨタ自動車株式会社 | 半導体装置とその製造方法 |
JP5895950B2 (ja) | 2014-01-20 | 2016-03-30 | トヨタ自動車株式会社 | 半導体装置の製造方法 |
JP6277814B2 (ja) | 2014-03-25 | 2018-02-14 | 株式会社デンソー | 半導体装置 |
JP6459791B2 (ja) | 2014-07-14 | 2019-01-30 | 株式会社デンソー | 半導体装置およびその製造方法 |
JP6197773B2 (ja) | 2014-09-29 | 2017-09-20 | トヨタ自動車株式会社 | 半導体装置 |
JP6003961B2 (ja) * | 2014-11-04 | 2016-10-05 | トヨタ自動車株式会社 | 半導体装置 |
CN105702746A (zh) * | 2014-11-26 | 2016-06-22 | 国家电网公司 | 一种快恢复二极管及其制作方法 |
-
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Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008192737A (ja) * | 2007-02-02 | 2008-08-21 | Denso Corp | 半導体装置 |
JP2009111188A (ja) * | 2007-10-30 | 2009-05-21 | Denso Corp | 半導体装置 |
JP2012033897A (ja) * | 2010-07-01 | 2012-02-16 | Denso Corp | 半導体装置 |
WO2015093086A1 (ja) * | 2013-12-17 | 2015-06-25 | トヨタ自動車株式会社 | 半導体装置 |
WO2016098199A1 (ja) * | 2014-12-17 | 2016-06-23 | 三菱電機株式会社 | 半導体装置 |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE112023000171T5 (de) | 2022-03-16 | 2024-04-18 | Fuji Electric Co., Ltd. | Halbleitervorrichtung |
WO2024127764A1 (ja) * | 2022-12-12 | 2024-06-20 | 株式会社日立パワーデバイス | 半導体装置 |
WO2024135053A1 (ja) * | 2022-12-22 | 2024-06-27 | 株式会社日立パワーデバイス | 半導体装置 |
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