JP7173172B2 - 半導体装置および半導体モジュール - Google Patents
半導体装置および半導体モジュール Download PDFInfo
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- JP7173172B2 JP7173172B2 JP2020571007A JP2020571007A JP7173172B2 JP 7173172 B2 JP7173172 B2 JP 7173172B2 JP 2020571007 A JP2020571007 A JP 2020571007A JP 2020571007 A JP2020571007 A JP 2020571007A JP 7173172 B2 JP7173172 B2 JP 7173172B2
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- 239000004065 semiconductor Substances 0.000 title claims description 332
- 239000011241 protective layer Substances 0.000 claims description 164
- 239000000758 substrate Substances 0.000 claims description 147
- 230000002093 peripheral effect Effects 0.000 claims description 23
- 238000010586 diagram Methods 0.000 description 22
- 238000009825 accumulation Methods 0.000 description 14
- 239000002245 particle Substances 0.000 description 12
- 239000000370 acceptor Substances 0.000 description 10
- 239000011229 interlayer Substances 0.000 description 9
- 238000004519 manufacturing process Methods 0.000 description 9
- 229910052751 metal Inorganic materials 0.000 description 9
- 239000002184 metal Substances 0.000 description 9
- 238000001514 detection method Methods 0.000 description 7
- 239000000463 material Substances 0.000 description 7
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 7
- 229920005591 polysilicon Polymers 0.000 description 7
- 238000000926 separation method Methods 0.000 description 6
- 229910000679 solder Inorganic materials 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- 239000004020 conductor Substances 0.000 description 5
- 238000009826 distribution Methods 0.000 description 5
- 239000001307 helium Substances 0.000 description 5
- 229910052734 helium Inorganic materials 0.000 description 5
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 5
- 239000012535 impurity Substances 0.000 description 5
- 238000002347 injection Methods 0.000 description 5
- 239000007924 injection Substances 0.000 description 5
- 239000010410 layer Substances 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 239000002826 coolant Substances 0.000 description 3
- 238000001816 cooling Methods 0.000 description 3
- 230000005484 gravity Effects 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 239000004642 Polyimide Substances 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000013021 overheating Methods 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 238000011084 recovery Methods 0.000 description 2
- 229910002601 GaN Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 229910000676 Si alloy Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- CSDREXVUYHZDNP-UHFFFAOYSA-N alumanylidynesilicon Chemical compound [Al].[Si] CSDREXVUYHZDNP-UHFFFAOYSA-N 0.000 description 1
- 239000005380 borophosphosilicate glass Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 230000012447 hatching Effects 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 238000005121 nitriding Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 150000003609 titanium compounds Chemical class 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
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Description
特許文献1 特開2007-329330号公報
特許文献2 特開2009-38140号公報
特許文献3 特開2015-177116号公報
特許文献4 特開2015-26683号公報
Claims (20)
- 半導体基板と、
前記半導体基板に設けられた活性部と、
前記半導体基板に設けられ、上面視において前記活性部を挟んで配置された第1ウェル領域および第2ウェル領域と、
前記活性部の上方に配置されたエミッタ電極と、
前記第1ウェル領域の上方に配置され、前記エミッタ電極とは分離しているパッドと、
上面視において前記活性部を分割する分割ウェル領域と
を備え、
前記第2ウェル領域の上方には、前記エミッタ電極が配置され、
前記分割ウェル領域は、予め定められたウェル長手方向に長手を有しており、
前記分割ウェル領域の一端は前記第1ウェル領域に接続され、他の一端は前記第2ウェル領域に接続されている半導体装置。 - 半導体基板と、
前記半導体基板に設けられた活性部と、
前記半導体基板に設けられ、上面視において前記活性部を挟んで配置された第1ウェル領域および第2ウェル領域と、
前記活性部の上方に配置されたエミッタ電極と、
前記第1ウェル領域の上方に配置され、前記エミッタ電極とは分離しているパッドと、
上面視において前記活性部を分割する分割ウェル領域と
を備え、
前記第2ウェル領域の上方には、前記エミッタ電極が配置され、
前記分割ウェル領域は、予め定められたウェル長手方向に長手を有しており、
前記分割ウェル領域は、上面視において前記ウェル長手方向と垂直な方向の幅が、他の部分よりも広い幅広部を有し、
前記幅広部の上方に前記エミッタ電極が配置されている
半導体装置。 - 前記上面視において前記活性部を囲んで配置された周辺ウェル領域を更に備え、
前記第1ウェル領域および前記第2ウェル領域は、前記周辺ウェル領域よりも、前記活性部の中央側に突出している
請求項1または2に記載の半導体装置。 - 前記半導体基板は、上面視において向かい合う第1端辺および第2端辺を有し、
前記第1ウェル領域は、前記活性部と前記第1端辺との間に配置され、
前記第2ウェル領域は、前記活性部と前記第2端辺との間に配置されている
請求項1から3のいずれか一項に記載の半導体装置。 - 前記活性部に配置されたトランジスタ部と、上面視において前記第2ウェル領域に囲まれて配置されたダミー素子部とを有し、
前記トランジスタ部および前記ダミー素子部の双方は、前記半導体基板の上面に設けられたゲートトレンチ部を含み、
前記トランジスタ部は、前記半導体基板の上面において前記ゲートトレンチ部に接して設けられた第1導電型のエミッタ領域を有し、
前記ダミー素子部の上面において前記ゲートトレンチ部に接する領域には、第2導電型の領域が設けられている
請求項1から4のいずれか一項に記載の半導体装置。 - 上面視において、前記ダミー素子部の面積は、前記トランジスタ部の面積よりも小さい
請求項5に記載の半導体装置。 - 前記ダミー素子部の前記第2導電型の領域は、前記エミッタ電極に電気的に接続されている
請求項5または6に記載の半導体装置。 - 前記ゲートトレンチ部は、前記半導体基板の上面において、予め定められたトレンチ長手方向に長手を有しており、
前記ダミー素子部における前記第2導電型の領域は、
第2導電型のベース領域と、
前記トレンチ長手方向に沿って前記ベース領域と交互に配置され、前記ベース領域よりもドーピング濃度の高い第2導電型のコンタクト領域と
を有する請求項5から7のいずれか一項に記載の半導体装置。 - 前記エミッタ電極は、前記幅広部の全体を覆っている
請求項2に記載の半導体装置。 - 前記幅広部は、上面視において前記第1ウェル領域と前記第2ウェル領域との間に配置されている
請求項2または9に記載の半導体装置。 - 前記分割ウェル領域は、上面視において前記第1ウェル領域から、前記第2ウェル領域まで設けられている
請求項10に記載の半導体装置。 - 前記第1ウェル領域の上方にはゲートパッドが設けられており、
前記ゲートパッドに接続されたゲートランナーを更に備え、
前記ゲートランナーは、上面視において前記第2ウェル領域の端辺に沿って設けられた部分を有する
請求項1から11のいずれか一項に記載の半導体装置。 - 前記第1ウェル領域の上方にはゲートパッドが設けられており、
前記ゲートパッドに接続されたゲートランナーを更に備え、
前記ゲートランナーは、上面視において前記幅広部の端辺に沿って設けられた部分を有する
請求項2、9から11のいずれか一項に記載の半導体装置。 - 前記エミッタ電極の上方に設けられた保護層を更に備え、
前記保護層は、前記半導体基板の上面を、前記第1ウェル領域が設けられた第1領域と、前記第2ウェル領域が設けられた第2領域と、前記第1ウェル領域および前記第2ウェル領域の間の第3領域に分割している
請求項1から13のいずれか一項に記載の半導体装置。 - 上面視において、前記第3領域は、前記第1領域および前記第2領域のいずれよりも面積が大きい
請求項14に記載の半導体装置。 - 前記エミッタ電極のうち、前記保護層に覆われていない領域と接続する接続部を更に備え、
前記第3領域に前記接続部が接続する
請求項15に記載の半導体装置。 - 前記保護層は、第1の方向が長手方向である第1梁部と、前記第1の方向とは異なる第2の方向が長手方向である第2梁部とを含み、
上面視において、それぞれの梁部は、それぞれの前記長手方向と直交する短手方向において、前記保護層に覆われていない前記エミッタ電極に挟まれている
請求項16に記載の半導体装置。 - 前記エミッタ電極の前記第3領域は、少なくとも一つの前記第1梁部と、少なくとも一つの前記第2梁部とを含む前記保護層により囲まれている
請求項17に記載の半導体装置。 - 半導体基板と、
前記半導体基板に設けられた活性部と、
前記活性部に配置されたトランジスタ部と、
ダミー素子部と、
前記トランジスタ部および前記ダミー素子部を分離するウェル領域と
を備え、
前記トランジスタ部および前記ダミー素子部の双方は、前記半導体基板の上面に設けられたゲートトレンチ部を含み、
前記ウェル領域の深さは前記ゲートトレンチ部の深さよりも深く、
前記トランジスタ部は、前記半導体基板の上面において前記ゲートトレンチ部に接して設けられた第1導電型のエミッタ領域を有し、
前記ダミー素子部の上面において前記ゲートトレンチ部に接する領域には、第2導電型の領域が設けられている
半導体装置。 - 半導体基板と、
前記半導体基板に設けられた活性部と、
前記活性部の上方に配置されたエミッタ電極と、
上面視において前記活性部を分割する分割ウェル領域と
を備え、
前記分割ウェル領域は、予め定められたウェル長手方向に長手を有しており、
前記分割ウェル領域は、上面視において前記ウェル長手方向と垂直な方向の幅が、他の部分よりも広い幅広部を有し、
前記幅広部の上方に前記エミッタ電極が配置されている
半導体装置。
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