JP7024891B2 - 半導体装置 - Google Patents
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- 238000001514 detection method Methods 0.000 description 34
- 238000003860 storage Methods 0.000 description 13
- 239000011229 interlayer Substances 0.000 description 10
- 229910052751 metal Inorganic materials 0.000 description 8
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- 229910052782 aluminium Inorganic materials 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
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- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
- 229920005591 polysilicon Polymers 0.000 description 4
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- 230000001681 protective effect Effects 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
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- 229910002601 GaN Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 229910000676 Si alloy Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- CSDREXVUYHZDNP-UHFFFAOYSA-N alumanylidynesilicon Chemical compound [Al].[Si] CSDREXVUYHZDNP-UHFFFAOYSA-N 0.000 description 1
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- 239000011241 protective layer Substances 0.000 description 1
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- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 150000003609 titanium compounds Chemical class 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
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Description
特許文献1 特開2017-59672号公報
特許文献2 特開2004-55812号公報
Claims (12)
- 半導体基板と、
前記半導体基板に設けられた活性部と、
前記半導体基板に設けられ、上面視において前記活性部を挟んで配置された第1ウェル領域および第2ウェル領域と、
前記半導体基板に設けられ、上面視において前記活性部を囲んで配置された周辺ウェル領域と、
前記半導体基板に設けられ、上面視において前記第1ウェル領域および前記第2ウェル領域との間に配置された中間ウェル領域と、
前記第1ウェル領域の上方に配置された第1パッド、および、前記第2ウェル領域の上方に配置された複数の第2パッドと、
前記中間ウェル領域の上方に配置された温度センスダイオードと
を備え、
前記温度センスダイオードは、前記複数の第2パッドの内少なくとも1つの第2パッドと接続する半導体装置。 - 半導体基板と、
前記半導体基板に設けられた活性部と、
前記半導体基板に設けられ、上面視において前記活性部を挟んで配置された第1ウェル領域および第2ウェル領域と、
前記半導体基板に設けられ、上面視において前記活性部を囲んで配置された周辺ウェル領域と、
前記半導体基板に設けられ、上面視において前記第1ウェル領域および前記第2ウェル領域との間に配置され、上面視において前記第1ウェル領域から、前記第2ウェル領域まで設けられている中間ウェル領域と、
前記第1ウェル領域の上方に配置された第1パッド、および、前記第2ウェル領域の上方に配置された第2パッドと、
前記中間ウェル領域の上方に配置された温度センスダイオードと
を備える半導体装置。 - 前記第1ウェル領域および前記第2ウェル領域は、前記周辺ウェル領域よりも、前記活性部の中央側に突出している
請求項1または2に記載の半導体装置。 - 前記半導体基板は、上面視において向かい合う第1端辺および第2端辺を有し、
前記第1ウェル領域は、前記活性部と前記第1端辺との間に配置され、
前記第2ウェル領域は、前記活性部と前記第2端辺との間に配置されている
請求項1から3のいずれか一項に記載の半導体装置。 - 前記第1パッドに接続されたゲートランナーを更に備え、
前記第1パッドは、前記第1端辺の中央に配置されている
請求項4に記載の半導体装置。 - 半導体基板と、
前記半導体基板に設けられた活性部と、
前記半導体基板に設けられ、上面視において前記活性部を挟んで配置された第1ウェル領域および第2ウェル領域と、
前記半導体基板に設けられ、上面視において前記活性部を囲んで配置された周辺ウェル領域と、
前記半導体基板に設けられ、上面視において前記第1ウェル領域および前記第2ウェル領域との間に配置された中間ウェル領域と、
前記第1ウェル領域の上方に配置された第1パッド、および、前記第2ウェル領域の上方に配置された第2パッドと、
前記中間ウェル領域の上方に配置された温度センスダイオードと、
前記第1パッドに接続されたゲートランナーと
を備え、
前記半導体基板は、上面視において向かい合う第1端辺および第2端辺を有し、
前記第1ウェル領域は、前記活性部と前記第1端辺との間に配置され、
前記第2ウェル領域は、前記活性部と前記第2端辺との間に配置され、
前記第1パッドは、前記第1端辺の中央に配置され、
前記ゲートランナーは、
上面視において前記活性部を囲む活性周辺部と、
上面視において前記第1ウェル領域を囲む第1ウェル周辺部と、
上面視において前記第2ウェル領域を囲む第2ウェル周辺部と
を備える半導体装置。 - 前記第1ウェル周辺部は、前記第1端辺の中央に配置されており、
前記第2ウェル周辺部は、前記第2端辺の中央に配置されている
請求項6に記載の半導体装置。 - 前記中間ウェル領域は、上面視において前記第1ウェル領域から、前記第2ウェル領域まで設けられている
請求項1または6に記載の半導体装置。 - 前記中間ウェル領域は、上面視において前記第1ウェル領域および前記第2ウェル領域を結ぶ方向と直交する方向の幅が、他の部分よりも広い幅広部を有し、
前記幅広部の上方に前記温度センスダイオードが配置されている
請求項2に記載の半導体装置。 - 半導体基板と、
前記半導体基板に設けられた活性部と、
前記半導体基板に設けられ、上面視において前記活性部を挟んで配置された第1ウェル領域および第2ウェル領域と、
前記半導体基板に設けられ、上面視において前記活性部を囲んで配置された周辺ウェル領域と、
前記半導体基板に設けられ、上面視において前記第1ウェル領域および前記第2ウェル領域との間に配置された中間ウェル領域と、
前記第1ウェル領域の上方に配置された第1パッド、および、前記第2ウェル領域の上方に配置された第2パッドと、
前記中間ウェル領域の上方に配置された温度センスダイオードと、
前記第1パッドに接続されたゲートランナーと
を備え、
前記半導体基板は、上面視において向かい合う第1端辺および第2端辺を有し、
前記第1ウェル領域は、前記活性部と前記第1端辺との間に配置され、
前記第2ウェル領域は、前記活性部と前記第2端辺との間に配置され、
前記第1パッドは、前記第1端辺の中央に配置され、
前記ゲートランナーは、
上面視において前記温度センスダイオードを囲む環状部と、
前記第1ウェル領域から前記環状部まで設けられた第1延伸部と、
前記第2ウェル領域から前記環状部まで設けられた第2延伸部と
を有する半導体装置。 - 前記活性部でかつ前記半導体基板の上面に設けられたゲートトレンチ部およびダミートレンチ部を更に備え、
前記中間ウェル領域は、上面視において前記第1ウェル領域および前記第2ウェル領域を結ぶ方向と直交する方向の幅が、他の部分よりも広い幅広部を有し、
前記幅広部の上方に前記温度センスダイオードが配置されていて、
前記ゲートトレンチ部は、前記環状部まで延伸して設けられ、前記環状部と接続し、
前記ダミートレンチ部は、前記幅広部まで延伸して設けられない
請求項10に記載の半導体装置。 - 半導体基板と、
前記半導体基板に設けられた活性部と、
前記半導体基板に設けられ、上面視において前記活性部を横断して設けられたゲートランナーと、
前記半導体基板の上方に配置された温度センスダイオードと
を備え、
前記ゲートランナーは、上面視において前記温度センスダイオードを囲む環状部と、
前記環状部の一つの端部から前記活性部の一つの端部まで延伸する第1延伸部と、
前記環状部の他の端部から前記活性部の他の端部まで延伸する第2延伸部と
を備え、
前記環状部は、前記活性部の中央を囲むように配置される半導体装置。
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