JP2019522284A5 - - Google Patents

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Publication number
JP2019522284A5
JP2019522284A5 JP2018566222A JP2018566222A JP2019522284A5 JP 2019522284 A5 JP2019522284 A5 JP 2019522284A5 JP 2018566222 A JP2018566222 A JP 2018566222A JP 2018566222 A JP2018566222 A JP 2018566222A JP 2019522284 A5 JP2019522284 A5 JP 2019522284A5
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JP
Japan
Prior art keywords
register
refresh
setting
refresh operation
flash memory
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Application number
JP2018566222A
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English (en)
Japanese (ja)
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JP7213690B2 (ja
JP2019522284A (ja
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Priority claimed from US15/615,827 external-priority patent/US10199115B2/en
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Publication of JP2019522284A publication Critical patent/JP2019522284A/ja
Publication of JP2019522284A5 publication Critical patent/JP2019522284A5/ja
Priority to JP2022014848A priority Critical patent/JP7348325B2/ja
Application granted granted Critical
Publication of JP7213690B2 publication Critical patent/JP7213690B2/ja
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JP2018566222A 2016-06-20 2017-06-07 フラッシュメモリのためのリフレッシュの管理 Active JP7213690B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2022014848A JP7348325B2 (ja) 2016-06-20 2022-02-02 フラッシュメモリのためのリフレッシュの管理

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201662352393P 2016-06-20 2016-06-20
US62/352,393 2016-06-20
US15/615,827 2017-06-06
US15/615,827 US10199115B2 (en) 2016-06-20 2017-06-06 Managing refresh for flash memory
PCT/US2017/036397 WO2017222818A1 (en) 2016-06-20 2017-06-07 Managing refresh for flash memory

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2022014848A Division JP7348325B2 (ja) 2016-06-20 2022-02-02 フラッシュメモリのためのリフレッシュの管理

Publications (3)

Publication Number Publication Date
JP2019522284A JP2019522284A (ja) 2019-08-08
JP2019522284A5 true JP2019522284A5 (enExample) 2020-07-02
JP7213690B2 JP7213690B2 (ja) 2023-01-27

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ID=60659776

Family Applications (2)

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JP2018566222A Active JP7213690B2 (ja) 2016-06-20 2017-06-07 フラッシュメモリのためのリフレッシュの管理
JP2022014848A Active JP7348325B2 (ja) 2016-06-20 2022-02-02 フラッシュメモリのためのリフレッシュの管理

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JP2022014848A Active JP7348325B2 (ja) 2016-06-20 2022-02-02 フラッシュメモリのためのリフレッシュの管理

Country Status (9)

Country Link
US (2) US10199115B2 (enExample)
EP (2) EP3472840B1 (enExample)
JP (2) JP7213690B2 (enExample)
KR (1) KR102508868B1 (enExample)
CN (2) CN109328386B (enExample)
BR (1) BR112018075661A2 (enExample)
CA (1) CA3026804C (enExample)
ES (1) ES2874279T3 (enExample)
WO (1) WO2017222818A1 (enExample)

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US10199115B2 (en) * 2016-06-20 2019-02-05 Qualcomm Incorporated Managing refresh for flash memory
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KR102611382B1 (ko) 2018-09-19 2023-12-07 삼성디스플레이 주식회사 터치 감지 유닛과 그를 포함하는 표시 장치
US10761727B2 (en) * 2018-11-19 2020-09-01 Micron Technology, Inc. Scan frequency modulation based on memory density or block usage
US10725706B1 (en) * 2019-01-23 2020-07-28 Qualcomm Incorporated Apparatus and method of scheduling universal flash storage refresh operations according to a refresh handover mechanism
US10811076B1 (en) * 2019-06-29 2020-10-20 Intel Corporation Battery life based on inhibited memory refreshes
US11404131B2 (en) * 2019-07-12 2022-08-02 Micron Technology, Inc. Decision for executing full-memory refresh during memory sub-system power-on stage
US11037641B1 (en) * 2019-12-05 2021-06-15 Sandisk Technologies Llc Temperature and cycling dependent refresh operation for memory cells
US11500567B2 (en) 2019-12-06 2022-11-15 Micron Technology, Inc. Configuring partitions of a memory sub-system for different data
DE102020133713A1 (de) 2020-02-27 2021-09-02 Taiwan Semiconductor Manufacturing Co., Ltd. Speicheraktualisierung
US11475929B2 (en) 2020-02-27 2022-10-18 Taiwan Semiconductor Manufacturing Company, Ltd. Memory refresh
CN111798906A (zh) * 2020-06-29 2020-10-20 深圳市芯天下技术有限公司 提高非型闪存数据保持能力方法、系统、存储介质和终端
US12327046B2 (en) 2021-06-25 2025-06-10 SanDisk Technologies, Inc. Data retention-specific refresh read
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US12237031B2 (en) * 2022-06-01 2025-02-25 Micron Technology, Inc. Refresh rate selection for a memory built-in self-test
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CN116312673B (zh) * 2023-03-16 2024-08-06 海光集成电路设计(北京)有限公司 一种数据自刷新电路、芯片及电子设备

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JP5478855B2 (ja) 2008-08-08 2014-04-23 ルネサスエレクトロニクス株式会社 不揮発性メモリ制御方法及び半導体装置
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US10199115B2 (en) * 2016-06-20 2019-02-05 Qualcomm Incorporated Managing refresh for flash memory

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