ES2874279T3 - Gestión de actualización para memoria flash - Google Patents

Gestión de actualización para memoria flash Download PDF

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Publication number
ES2874279T3
ES2874279T3 ES17739376T ES17739376T ES2874279T3 ES 2874279 T3 ES2874279 T3 ES 2874279T3 ES 17739376 T ES17739376 T ES 17739376T ES 17739376 T ES17739376 T ES 17739376T ES 2874279 T3 ES2874279 T3 ES 2874279T3
Authority
ES
Spain
Prior art keywords
update
flash memory
register
record
operations
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
ES17739376T
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English (en)
Spanish (es)
Inventor
Hyunsuk Shin
Robert Hardacker
Hung Vuong
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Qualcomm Inc
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Qualcomm Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Qualcomm Inc filed Critical Qualcomm Inc
Application granted granted Critical
Publication of ES2874279T3 publication Critical patent/ES2874279T3/es
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3418—Disturbance prevention or evaluation; Refreshing of disturbed memory data
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F12/00—Accessing, addressing or allocating within memory systems or architectures
    • G06F12/02—Addressing or allocation; Relocation
    • G06F12/0223—User address space allocation, e.g. contiguous or non contiguous base addressing
    • G06F12/023—Free address space management
    • G06F12/0238—Memory management in non-volatile memory, e.g. resistive RAM or ferroelectric memory
    • G06F12/0246—Memory management in non-volatile memory, e.g. resistive RAM or ferroelectric memory in block erasable memory, e.g. flash memory
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3418—Disturbance prevention or evaluation; Refreshing of disturbed memory data
    • G11C16/3431—Circuits or methods to detect disturbed nonvolatile memory cells, e.g. which still read as programmed but with threshold less than the program verify threshold or read as erased but with threshold greater than the erase verify threshold, and to reverse the disturbance via a refreshing programming or erasing step

Landscapes

  • Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Read Only Memory (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)
  • Memory System (AREA)
  • Dram (AREA)
ES17739376T 2016-06-20 2017-06-07 Gestión de actualización para memoria flash Active ES2874279T3 (es)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201662352393P 2016-06-20 2016-06-20
US15/615,827 US10199115B2 (en) 2016-06-20 2017-06-06 Managing refresh for flash memory
PCT/US2017/036397 WO2017222818A1 (en) 2016-06-20 2017-06-07 Managing refresh for flash memory

Publications (1)

Publication Number Publication Date
ES2874279T3 true ES2874279T3 (es) 2021-11-04

Family

ID=60659776

Family Applications (1)

Application Number Title Priority Date Filing Date
ES17739376T Active ES2874279T3 (es) 2016-06-20 2017-06-07 Gestión de actualización para memoria flash

Country Status (9)

Country Link
US (2) US10199115B2 (enExample)
EP (2) EP3472840B1 (enExample)
JP (2) JP7213690B2 (enExample)
KR (1) KR102508868B1 (enExample)
CN (2) CN109328386B (enExample)
BR (1) BR112018075661A2 (enExample)
CA (1) CA3026804C (enExample)
ES (1) ES2874279T3 (enExample)
WO (1) WO2017222818A1 (enExample)

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KR102611382B1 (ko) 2018-09-19 2023-12-07 삼성디스플레이 주식회사 터치 감지 유닛과 그를 포함하는 표시 장치
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US10725706B1 (en) * 2019-01-23 2020-07-28 Qualcomm Incorporated Apparatus and method of scheduling universal flash storage refresh operations according to a refresh handover mechanism
US10811076B1 (en) * 2019-06-29 2020-10-20 Intel Corporation Battery life based on inhibited memory refreshes
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US11037641B1 (en) * 2019-12-05 2021-06-15 Sandisk Technologies Llc Temperature and cycling dependent refresh operation for memory cells
US11500567B2 (en) 2019-12-06 2022-11-15 Micron Technology, Inc. Configuring partitions of a memory sub-system for different data
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CN111798906A (zh) * 2020-06-29 2020-10-20 深圳市芯天下技术有限公司 提高非型闪存数据保持能力方法、系统、存储介质和终端
US12327046B2 (en) 2021-06-25 2025-06-10 SanDisk Technologies, Inc. Data retention-specific refresh read
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US12237031B2 (en) * 2022-06-01 2025-02-25 Micron Technology, Inc. Refresh rate selection for a memory built-in self-test
US12282687B2 (en) * 2022-06-09 2025-04-22 Micron Technology, Inc. Prioritization of background media management operations in memory systems
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JP5478855B2 (ja) 2008-08-08 2014-04-23 ルネサスエレクトロニクス株式会社 不揮発性メモリ制御方法及び半導体装置
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US10199115B2 (en) * 2016-06-20 2019-02-05 Qualcomm Incorporated Managing refresh for flash memory

Also Published As

Publication number Publication date
US10360987B2 (en) 2019-07-23
JP7213690B2 (ja) 2023-01-27
CA3026804A1 (en) 2017-12-28
KR102508868B1 (ko) 2023-03-09
BR112018075661A2 (pt) 2019-04-09
WO2017222818A1 (en) 2017-12-28
JP7348325B2 (ja) 2023-09-20
EP3472840A1 (en) 2019-04-24
CN109328386A (zh) 2019-02-12
JP2022070884A (ja) 2022-05-13
CN114758711A (zh) 2022-07-15
KR20190016968A (ko) 2019-02-19
CN109328386B (zh) 2022-04-29
EP3472840B1 (en) 2021-02-24
EP3594952A1 (en) 2020-01-15
US20170365352A1 (en) 2017-12-21
US10199115B2 (en) 2019-02-05
JP2019522284A (ja) 2019-08-08
US20190066811A1 (en) 2019-02-28
CA3026804C (en) 2023-09-05

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