BR112018075661A2 - gerenciamento de atualização para memória flash - Google Patents

gerenciamento de atualização para memória flash

Info

Publication number
BR112018075661A2
BR112018075661A2 BR112018075661-0A BR112018075661A BR112018075661A2 BR 112018075661 A2 BR112018075661 A2 BR 112018075661A2 BR 112018075661 A BR112018075661 A BR 112018075661A BR 112018075661 A2 BR112018075661 A2 BR 112018075661A2
Authority
BR
Brazil
Prior art keywords
update
flash memory
memory
host
destination
Prior art date
Application number
BR112018075661-0A
Other languages
English (en)
Portuguese (pt)
Inventor
Shin Hyunsuk
Hardacker Robert
Vuong Hung
Original Assignee
Qualcomm Incorporated
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Qualcomm Incorporated filed Critical Qualcomm Incorporated
Publication of BR112018075661A2 publication Critical patent/BR112018075661A2/pt

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3418—Disturbance prevention or evaluation; Refreshing of disturbed memory data
    • G11C16/3431—Circuits or methods to detect disturbed nonvolatile memory cells, e.g. which still read as programmed but with threshold less than the program verify threshold or read as erased but with threshold greater than the erase verify threshold, and to reverse the disturbance via a refreshing programming or erasing step
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F12/00—Accessing, addressing or allocating within memory systems or architectures
    • G06F12/02—Addressing or allocation; Relocation
    • G06F12/0223—User address space allocation, e.g. contiguous or non contiguous base addressing
    • G06F12/023—Free address space management
    • G06F12/0238—Memory management in non-volatile memory, e.g. resistive RAM or ferroelectric memory
    • G06F12/0246—Memory management in non-volatile memory, e.g. resistive RAM or ferroelectric memory in block erasable memory, e.g. flash memory
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3418—Disturbance prevention or evaluation; Refreshing of disturbed memory data

Landscapes

  • Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Read Only Memory (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)
  • Memory System (AREA)
  • Dram (AREA)
BR112018075661-0A 2016-06-20 2017-06-07 gerenciamento de atualização para memória flash BR112018075661A2 (pt)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201662352393P 2016-06-20 2016-06-20
US62/352,393 2016-06-20
US15/615,827 2017-06-06
US15/615,827 US10199115B2 (en) 2016-06-20 2017-06-06 Managing refresh for flash memory
PCT/US2017/036397 WO2017222818A1 (en) 2016-06-20 2017-06-07 Managing refresh for flash memory

Publications (1)

Publication Number Publication Date
BR112018075661A2 true BR112018075661A2 (pt) 2019-04-09

Family

ID=60659776

Family Applications (1)

Application Number Title Priority Date Filing Date
BR112018075661-0A BR112018075661A2 (pt) 2016-06-20 2017-06-07 gerenciamento de atualização para memória flash

Country Status (9)

Country Link
US (2) US10199115B2 (enExample)
EP (2) EP3472840B1 (enExample)
JP (2) JP7213690B2 (enExample)
KR (1) KR102508868B1 (enExample)
CN (2) CN109328386B (enExample)
BR (1) BR112018075661A2 (enExample)
CA (1) CA3026804C (enExample)
ES (1) ES2874279T3 (enExample)
WO (1) WO2017222818A1 (enExample)

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KR102611382B1 (ko) 2018-09-19 2023-12-07 삼성디스플레이 주식회사 터치 감지 유닛과 그를 포함하는 표시 장치
US10761727B2 (en) * 2018-11-19 2020-09-01 Micron Technology, Inc. Scan frequency modulation based on memory density or block usage
US10725706B1 (en) * 2019-01-23 2020-07-28 Qualcomm Incorporated Apparatus and method of scheduling universal flash storage refresh operations according to a refresh handover mechanism
US10811076B1 (en) * 2019-06-29 2020-10-20 Intel Corporation Battery life based on inhibited memory refreshes
US11404131B2 (en) * 2019-07-12 2022-08-02 Micron Technology, Inc. Decision for executing full-memory refresh during memory sub-system power-on stage
US11037641B1 (en) * 2019-12-05 2021-06-15 Sandisk Technologies Llc Temperature and cycling dependent refresh operation for memory cells
US11500567B2 (en) 2019-12-06 2022-11-15 Micron Technology, Inc. Configuring partitions of a memory sub-system for different data
DE102020133713A1 (de) 2020-02-27 2021-09-02 Taiwan Semiconductor Manufacturing Co., Ltd. Speicheraktualisierung
US11475929B2 (en) 2020-02-27 2022-10-18 Taiwan Semiconductor Manufacturing Company, Ltd. Memory refresh
CN111798906A (zh) * 2020-06-29 2020-10-20 深圳市芯天下技术有限公司 提高非型闪存数据保持能力方法、系统、存储介质和终端
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US12237031B2 (en) * 2022-06-01 2025-02-25 Micron Technology, Inc. Refresh rate selection for a memory built-in self-test
US12282687B2 (en) * 2022-06-09 2025-04-22 Micron Technology, Inc. Prioritization of background media management operations in memory systems
CN116312673B (zh) * 2023-03-16 2024-08-06 海光集成电路设计(北京)有限公司 一种数据自刷新电路、芯片及电子设备

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JP5478855B2 (ja) 2008-08-08 2014-04-23 ルネサスエレクトロニクス株式会社 不揮発性メモリ制御方法及び半導体装置
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KR20140076735A (ko) * 2012-12-13 2014-06-23 삼성전자주식회사 휘발성 메모리 장치 및 메모리 시스템
US9076499B2 (en) * 2012-12-28 2015-07-07 Intel Corporation Refresh rate performance based on in-system weak bit detection
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US10199115B2 (en) * 2016-06-20 2019-02-05 Qualcomm Incorporated Managing refresh for flash memory

Also Published As

Publication number Publication date
US10360987B2 (en) 2019-07-23
JP7213690B2 (ja) 2023-01-27
CA3026804A1 (en) 2017-12-28
KR102508868B1 (ko) 2023-03-09
WO2017222818A1 (en) 2017-12-28
JP7348325B2 (ja) 2023-09-20
EP3472840A1 (en) 2019-04-24
CN109328386A (zh) 2019-02-12
JP2022070884A (ja) 2022-05-13
CN114758711A (zh) 2022-07-15
KR20190016968A (ko) 2019-02-19
CN109328386B (zh) 2022-04-29
EP3472840B1 (en) 2021-02-24
EP3594952A1 (en) 2020-01-15
US20170365352A1 (en) 2017-12-21
US10199115B2 (en) 2019-02-05
JP2019522284A (ja) 2019-08-08
ES2874279T3 (es) 2021-11-04
US20190066811A1 (en) 2019-02-28
CA3026804C (en) 2023-09-05

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B350 Update of information on the portal [chapter 15.35 patent gazette]
B06W Patent application suspended after preliminary examination (for patents with searches from other patent authorities) chapter 6.23 patent gazette]
B07A Application suspended after technical examination (opinion) [chapter 7.1 patent gazette]
B09B Patent application refused [chapter 9.2 patent gazette]
B12B Appeal against refusal [chapter 12.2 patent gazette]