KR102508868B1 - 플래시 메모리에 대한 리프레시 관리 - Google Patents

플래시 메모리에 대한 리프레시 관리 Download PDF

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KR102508868B1
KR102508868B1 KR1020187036425A KR20187036425A KR102508868B1 KR 102508868 B1 KR102508868 B1 KR 102508868B1 KR 1020187036425 A KR1020187036425 A KR 1020187036425A KR 20187036425 A KR20187036425 A KR 20187036425A KR 102508868 B1 KR102508868 B1 KR 102508868B1
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refresh
delete delete
flash memory
register
memory
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KR20190016968A (ko
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현석 신
로버트 하다커
훙 브엉
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퀄컴 인코포레이티드
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3418—Disturbance prevention or evaluation; Refreshing of disturbed memory data
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F12/00—Accessing, addressing or allocating within memory systems or architectures
    • G06F12/02—Addressing or allocation; Relocation
    • G06F12/0223—User address space allocation, e.g. contiguous or non contiguous base addressing
    • G06F12/023—Free address space management
    • G06F12/0238—Memory management in non-volatile memory, e.g. resistive RAM or ferroelectric memory
    • G06F12/0246—Memory management in non-volatile memory, e.g. resistive RAM or ferroelectric memory in block erasable memory, e.g. flash memory
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3418—Disturbance prevention or evaluation; Refreshing of disturbed memory data
    • G11C16/3431—Circuits or methods to detect disturbed nonvolatile memory cells, e.g. which still read as programmed but with threshold less than the program verify threshold or read as erased but with threshold greater than the erase verify threshold, and to reverse the disturbance via a refreshing programming or erasing step

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  • Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Read Only Memory (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)
  • Memory System (AREA)
  • Dram (AREA)
KR1020187036425A 2016-06-20 2017-06-07 플래시 메모리에 대한 리프레시 관리 Active KR102508868B1 (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201662352393P 2016-06-20 2016-06-20
US62/352,393 2016-06-20
US15/615,827 2017-06-06
US15/615,827 US10199115B2 (en) 2016-06-20 2017-06-06 Managing refresh for flash memory
PCT/US2017/036397 WO2017222818A1 (en) 2016-06-20 2017-06-07 Managing refresh for flash memory

Publications (2)

Publication Number Publication Date
KR20190016968A KR20190016968A (ko) 2019-02-19
KR102508868B1 true KR102508868B1 (ko) 2023-03-09

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KR1020187036425A Active KR102508868B1 (ko) 2016-06-20 2017-06-07 플래시 메모리에 대한 리프레시 관리

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US (2) US10199115B2 (enExample)
EP (2) EP3594952A1 (enExample)
JP (2) JP7213690B2 (enExample)
KR (1) KR102508868B1 (enExample)
CN (2) CN109328386B (enExample)
BR (1) BR112018075661A2 (enExample)
CA (1) CA3026804C (enExample)
ES (1) ES2874279T3 (enExample)
WO (1) WO2017222818A1 (enExample)

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KR102611382B1 (ko) 2018-09-19 2023-12-07 삼성디스플레이 주식회사 터치 감지 유닛과 그를 포함하는 표시 장치
US10761727B2 (en) 2018-11-19 2020-09-01 Micron Technology, Inc. Scan frequency modulation based on memory density or block usage
US10725706B1 (en) * 2019-01-23 2020-07-28 Qualcomm Incorporated Apparatus and method of scheduling universal flash storage refresh operations according to a refresh handover mechanism
US10811076B1 (en) * 2019-06-29 2020-10-20 Intel Corporation Battery life based on inhibited memory refreshes
US11404131B2 (en) * 2019-07-12 2022-08-02 Micron Technology, Inc. Decision for executing full-memory refresh during memory sub-system power-on stage
US11037641B1 (en) * 2019-12-05 2021-06-15 Sandisk Technologies Llc Temperature and cycling dependent refresh operation for memory cells
US11500567B2 (en) * 2019-12-06 2022-11-15 Micron Technology, Inc. Configuring partitions of a memory sub-system for different data
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US12237031B2 (en) * 2022-06-01 2025-02-25 Micron Technology, Inc. Refresh rate selection for a memory built-in self-test
US12282687B2 (en) * 2022-06-09 2025-04-22 Micron Technology, Inc. Prioritization of background media management operations in memory systems
CN116312673B (zh) * 2023-03-16 2024-08-06 海光集成电路设计(北京)有限公司 一种数据自刷新电路、芯片及电子设备

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Publication number Publication date
JP7348325B2 (ja) 2023-09-20
ES2874279T3 (es) 2021-11-04
WO2017222818A1 (en) 2017-12-28
BR112018075661A2 (pt) 2019-04-09
KR20190016968A (ko) 2019-02-19
US20170365352A1 (en) 2017-12-21
JP2019522284A (ja) 2019-08-08
CN114758711A (zh) 2022-07-15
US20190066811A1 (en) 2019-02-28
CA3026804C (en) 2023-09-05
JP2022070884A (ja) 2022-05-13
EP3472840A1 (en) 2019-04-24
EP3472840B1 (en) 2021-02-24
CN109328386A (zh) 2019-02-12
EP3594952A1 (en) 2020-01-15
JP7213690B2 (ja) 2023-01-27
CA3026804A1 (en) 2017-12-28
CN109328386B (zh) 2022-04-29
US10360987B2 (en) 2019-07-23
US10199115B2 (en) 2019-02-05

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