CN109328386B - 管理闪存存储器的刷新 - Google Patents

管理闪存存储器的刷新 Download PDF

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Publication number
CN109328386B
CN109328386B CN201780037555.5A CN201780037555A CN109328386B CN 109328386 B CN109328386 B CN 109328386B CN 201780037555 A CN201780037555 A CN 201780037555A CN 109328386 B CN109328386 B CN 109328386B
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China
Prior art keywords
refresh
register
setting
indicate
flash memory
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Chinese (zh)
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CN109328386A (zh
Inventor
H·幸
R·哈德克
H·王
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Qualcomm Inc
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Qualcomm Inc
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3418—Disturbance prevention or evaluation; Refreshing of disturbed memory data
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F12/00—Accessing, addressing or allocating within memory systems or architectures
    • G06F12/02—Addressing or allocation; Relocation
    • G06F12/0223—User address space allocation, e.g. contiguous or non contiguous base addressing
    • G06F12/023—Free address space management
    • G06F12/0238—Memory management in non-volatile memory, e.g. resistive RAM or ferroelectric memory
    • G06F12/0246—Memory management in non-volatile memory, e.g. resistive RAM or ferroelectric memory in block erasable memory, e.g. flash memory
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3418—Disturbance prevention or evaluation; Refreshing of disturbed memory data
    • G11C16/3431—Circuits or methods to detect disturbed nonvolatile memory cells, e.g. which still read as programmed but with threshold less than the program verify threshold or read as erased but with threshold greater than the erase verify threshold, and to reverse the disturbance via a refreshing programming or erasing step

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  • Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Read Only Memory (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)
  • Memory System (AREA)
  • Dram (AREA)
CN201780037555.5A 2016-06-20 2017-06-07 管理闪存存储器的刷新 Active CN109328386B (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202210480333.3A CN114758711A (zh) 2016-06-20 2017-06-07 管理闪存存储器的刷新

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201662352393P 2016-06-20 2016-06-20
US62/352,393 2016-06-20
US15/615,827 2017-06-06
US15/615,827 US10199115B2 (en) 2016-06-20 2017-06-06 Managing refresh for flash memory
PCT/US2017/036397 WO2017222818A1 (en) 2016-06-20 2017-06-07 Managing refresh for flash memory

Related Child Applications (1)

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CN202210480333.3A Division CN114758711A (zh) 2016-06-20 2017-06-07 管理闪存存储器的刷新

Publications (2)

Publication Number Publication Date
CN109328386A CN109328386A (zh) 2019-02-12
CN109328386B true CN109328386B (zh) 2022-04-29

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CN201780037555.5A Active CN109328386B (zh) 2016-06-20 2017-06-07 管理闪存存储器的刷新
CN202210480333.3A Pending CN114758711A (zh) 2016-06-20 2017-06-07 管理闪存存储器的刷新

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CN202210480333.3A Pending CN114758711A (zh) 2016-06-20 2017-06-07 管理闪存存储器的刷新

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US (2) US10199115B2 (enExample)
EP (2) EP3472840B1 (enExample)
JP (2) JP7213690B2 (enExample)
KR (1) KR102508868B1 (enExample)
CN (2) CN109328386B (enExample)
BR (1) BR112018075661A2 (enExample)
CA (1) CA3026804C (enExample)
ES (1) ES2874279T3 (enExample)
WO (1) WO2017222818A1 (enExample)

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US10725706B1 (en) * 2019-01-23 2020-07-28 Qualcomm Incorporated Apparatus and method of scheduling universal flash storage refresh operations according to a refresh handover mechanism
US10811076B1 (en) * 2019-06-29 2020-10-20 Intel Corporation Battery life based on inhibited memory refreshes
US11404131B2 (en) * 2019-07-12 2022-08-02 Micron Technology, Inc. Decision for executing full-memory refresh during memory sub-system power-on stage
US11037641B1 (en) * 2019-12-05 2021-06-15 Sandisk Technologies Llc Temperature and cycling dependent refresh operation for memory cells
US11500567B2 (en) 2019-12-06 2022-11-15 Micron Technology, Inc. Configuring partitions of a memory sub-system for different data
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CN111798906A (zh) * 2020-06-29 2020-10-20 深圳市芯天下技术有限公司 提高非型闪存数据保持能力方法、系统、存储介质和终端
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US12237031B2 (en) * 2022-06-01 2025-02-25 Micron Technology, Inc. Refresh rate selection for a memory built-in self-test
US12282687B2 (en) * 2022-06-09 2025-04-22 Micron Technology, Inc. Prioritization of background media management operations in memory systems
CN116312673B (zh) * 2023-03-16 2024-08-06 海光集成电路设计(北京)有限公司 一种数据自刷新电路、芯片及电子设备

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US10360987B2 (en) 2019-07-23
JP7213690B2 (ja) 2023-01-27
CA3026804A1 (en) 2017-12-28
KR102508868B1 (ko) 2023-03-09
BR112018075661A2 (pt) 2019-04-09
WO2017222818A1 (en) 2017-12-28
JP7348325B2 (ja) 2023-09-20
EP3472840A1 (en) 2019-04-24
CN109328386A (zh) 2019-02-12
JP2022070884A (ja) 2022-05-13
CN114758711A (zh) 2022-07-15
KR20190016968A (ko) 2019-02-19
EP3472840B1 (en) 2021-02-24
EP3594952A1 (en) 2020-01-15
US20170365352A1 (en) 2017-12-21
US10199115B2 (en) 2019-02-05
JP2019522284A (ja) 2019-08-08
ES2874279T3 (es) 2021-11-04
US20190066811A1 (en) 2019-02-28
CA3026804C (en) 2023-09-05

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