JP2014232525A5 - - Google Patents
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- Publication number
- JP2014232525A5 JP2014232525A5 JP2014092259A JP2014092259A JP2014232525A5 JP 2014232525 A5 JP2014232525 A5 JP 2014232525A5 JP 2014092259 A JP2014092259 A JP 2014092259A JP 2014092259 A JP2014092259 A JP 2014092259A JP 2014232525 A5 JP2014232525 A5 JP 2014232525A5
- Authority
- JP
- Japan
- Prior art keywords
- operation mode
- volatile memory
- memory
- processor
- main memory
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 claims 3
- 238000012544 monitoring process Methods 0.000 claims 2
- 230000000717 retained effect Effects 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2014092259A JP6335616B2 (ja) | 2013-04-30 | 2014-04-28 | 半導体装置 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2013095552 | 2013-04-30 | ||
| JP2013095552 | 2013-04-30 | ||
| JP2014092259A JP6335616B2 (ja) | 2013-04-30 | 2014-04-28 | 半導体装置 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2018088150A Division JP6505910B2 (ja) | 2013-04-30 | 2018-05-01 | 半導体装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2014232525A JP2014232525A (ja) | 2014-12-11 |
| JP2014232525A5 true JP2014232525A5 (enExample) | 2017-06-15 |
| JP6335616B2 JP6335616B2 (ja) | 2018-05-30 |
Family
ID=51790350
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2014092259A Expired - Fee Related JP6335616B2 (ja) | 2013-04-30 | 2014-04-28 | 半導体装置 |
| JP2018088150A Expired - Fee Related JP6505910B2 (ja) | 2013-04-30 | 2018-05-01 | 半導体装置 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2018088150A Expired - Fee Related JP6505910B2 (ja) | 2013-04-30 | 2018-05-01 | 半導体装置 |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US10141053B2 (enExample) |
| JP (2) | JP6335616B2 (enExample) |
Families Citing this family (38)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3225303B2 (ja) | 1992-07-30 | 2001-11-05 | シントーファイン株式会社 | モノカルボン酸モリブデンの製造方法 |
| US9853053B2 (en) | 2012-09-10 | 2017-12-26 | 3B Technologies, Inc. | Three dimension integrated circuits employing thin film transistors |
| TWI618058B (zh) | 2013-05-16 | 2018-03-11 | 半導體能源研究所股份有限公司 | 半導體裝置 |
| KR102320576B1 (ko) | 2013-12-27 | 2021-11-02 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
| JP6607681B2 (ja) | 2014-03-07 | 2019-11-20 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| TWI695375B (zh) | 2014-04-10 | 2020-06-01 | 日商半導體能源研究所股份有限公司 | 記憶體裝置及半導體裝置 |
| WO2015170220A1 (en) | 2014-05-09 | 2015-11-12 | Semiconductor Energy Laboratory Co., Ltd. | Memory device and electronic device |
| KR102582740B1 (ko) | 2014-05-30 | 2023-09-26 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치, 이의 제조 방법, 및 전자 장치 |
| JP5901698B2 (ja) * | 2014-06-17 | 2016-04-13 | インターナショナル・ビジネス・マシーンズ・コーポレーションInternational Business Machines Corporation | メモリ管理方法 |
| CN107112049A (zh) | 2014-12-23 | 2017-08-29 | 3B技术公司 | 采用薄膜晶体管的三维集成电路 |
| TWI732383B (zh) | 2015-02-06 | 2021-07-01 | 日商半導體能源研究所股份有限公司 | 裝置及其製造方法以及電子裝置 |
| JP6681117B2 (ja) | 2015-03-13 | 2020-04-15 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| KR102582523B1 (ko) | 2015-03-19 | 2023-09-26 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 전자 기기 |
| US9547361B2 (en) | 2015-04-29 | 2017-01-17 | Qualcomm Incorporated | Methods and apparatuses for memory power reduction |
| EP3304554A4 (en) * | 2015-05-28 | 2019-01-09 | INTEL Corporation | MEMORY CELL BASED ON FERROELECTRIC MATERIAL WITH NON-VOLATILE RETENTION |
| US10978489B2 (en) | 2015-07-24 | 2021-04-13 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, display panel, method for manufacturing semiconductor device, method for manufacturing display panel, and information processing device |
| US10116749B2 (en) * | 2015-08-31 | 2018-10-30 | The Boeing Company | Method for providing flight management system data to peripheral devices |
| KR102653044B1 (ko) * | 2015-09-01 | 2024-04-01 | 소니그룹주식회사 | 적층체 |
| US9564217B1 (en) * | 2015-10-19 | 2017-02-07 | United Microelectronics Corp. | Semiconductor memory device having integrated DOSRAM and NOSRAM |
| US9741400B2 (en) | 2015-11-05 | 2017-08-22 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, memory device, electronic device, and method for operating the semiconductor device |
| WO2017103737A1 (en) | 2015-12-18 | 2017-06-22 | Semiconductor Energy Laboratory Co., Ltd. | Display panel, input/output device, data processing device, and method for manufacturing display panel |
| US9887010B2 (en) | 2016-01-21 | 2018-02-06 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, memory device, and driving method thereof |
| US10411013B2 (en) | 2016-01-22 | 2019-09-10 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and memory device |
| US9847105B2 (en) * | 2016-02-01 | 2017-12-19 | Samsung Electric Co., Ltd. | Memory package, memory module including the same, and operation method of memory package |
| US9965220B2 (en) | 2016-02-05 | 2018-05-08 | Qualcomm Incorporated | Forced idling of memory subsystems |
| EP3455855B1 (en) * | 2016-05-11 | 2020-04-22 | Atomera Incorporated | Dram architecture to reduce row activation circuitry power and peripheral leakage and related methods |
| US10109342B2 (en) * | 2016-05-11 | 2018-10-23 | Atomera Incorporated | Dram architecture to reduce row activation circuitry power and peripheral leakage and related methods |
| WO2018047035A1 (en) * | 2016-09-12 | 2018-03-15 | Semiconductor Energy Laboratory Co., Ltd. | Memory device, driving method thereof, semiconductor device, electronic component, and electronic device |
| US10599265B2 (en) | 2016-11-17 | 2020-03-24 | Semiconductor Energy Laboratory Co., Ltd. | Electronic device and touch panel input method |
| JP7293190B2 (ja) | 2018-03-16 | 2023-06-19 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| US10840240B2 (en) * | 2018-10-24 | 2020-11-17 | Micron Technology, Inc. | Functional blocks implemented by 3D stacked integrated circuit |
| JP2020148591A (ja) | 2019-03-13 | 2020-09-17 | セイコーエプソン株式会社 | 時計および時計の制御方法 |
| JP7331119B2 (ja) | 2019-04-15 | 2023-08-22 | 長江存儲科技有限責任公司 | 複数の機能性チップを伴う三次元nandメモリデバイスの集積 |
| EP3891806B1 (en) | 2019-04-15 | 2026-04-08 | Yangtze Memory Technologies Co., Ltd. | Unified semiconductor devices having processor and heterogeneous memories and methods for forming the same |
| CN112510031B (zh) * | 2019-04-30 | 2024-10-25 | 长江存储科技有限责任公司 | 具有处理器和nand闪存的键合半导体器件及其形成方法 |
| WO2020245688A1 (ja) * | 2019-06-04 | 2020-12-10 | 株式会社半導体エネルギー研究所 | 半導体装置、半導体ウエハ、及び電子機器 |
| CN110764020B (zh) * | 2019-10-30 | 2022-01-14 | 深圳市泰昂能源科技股份有限公司 | 变电站长电缆剩余电流检测方法、装置、设备及存储介质 |
| JPWO2023209491A1 (enExample) * | 2022-04-29 | 2023-11-02 |
Family Cites Families (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0973777A (ja) * | 1995-09-04 | 1997-03-18 | Matsushita Electric Ind Co Ltd | メモリ装置 |
| TW591372B (en) * | 2003-05-15 | 2004-06-11 | High Tech Comp Corp | Power control method of portable electronic device, portable electronic device and electronic system |
| JP4463503B2 (ja) * | 2003-07-15 | 2010-05-19 | 株式会社ルネサステクノロジ | メモリモジュール及びメモリシステム |
| US8010764B2 (en) * | 2005-07-07 | 2011-08-30 | International Business Machines Corporation | Method and system for decreasing power consumption in memory arrays having usage-driven power management |
| US7443759B1 (en) * | 2006-04-30 | 2008-10-28 | Sun Microsystems, Inc. | Reduced-power memory with per-sector ground control |
| US20080005516A1 (en) * | 2006-06-30 | 2008-01-03 | Meinschein Robert J | Memory power management through high-speed intra-memory data transfer and dynamic memory address remapping |
| US20080147457A1 (en) * | 2006-12-15 | 2008-06-19 | Rapp Roman A | Systems and methods for handling attributes used for assignment generation in a value flow environment |
| JP5099317B2 (ja) | 2007-05-17 | 2012-12-19 | 村田機械株式会社 | 電子機器 |
| EP2169558B1 (en) * | 2007-07-18 | 2015-01-07 | Fujitsu Limited | Memory refresh device and memory refresh method |
| KR101474344B1 (ko) * | 2008-07-11 | 2014-12-18 | 시게이트 테크놀로지 엘엘씨 | 캐시 플러시 제어 방법 및 이를 이용한 데이터 저장 시스템 |
| US8392736B2 (en) * | 2009-07-31 | 2013-03-05 | Hewlett-Packard Development Company, L.P. | Managing memory power usage |
| US8296496B2 (en) * | 2009-09-17 | 2012-10-23 | Hewlett-Packard Development Company, L.P. | Main memory with non-volatile memory and DRAM |
| US8461462B2 (en) | 2009-09-28 | 2013-06-11 | Kyocera Corporation | Circuit substrate, laminated board and laminated sheet |
| KR101870119B1 (ko) * | 2009-12-25 | 2018-06-25 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
| JP2012033002A (ja) | 2010-07-30 | 2012-02-16 | Toshiba Corp | メモリ管理装置およびメモリ管理方法 |
| JP5553309B2 (ja) | 2010-08-11 | 2014-07-16 | 国立大学法人 東京大学 | データ処理装置 |
| JP2012064158A (ja) | 2010-09-17 | 2012-03-29 | Toshiba Corp | メモリ管理装置及びメモリ管理方法 |
| US8990538B2 (en) * | 2010-11-05 | 2015-03-24 | Microsoft Corporation | Managing memory with limited write cycles in heterogeneous memory systems |
| US9235500B2 (en) * | 2010-12-07 | 2016-01-12 | Microsoft Technology Licensing, Llc | Dynamic memory allocation and relocation to create low power regions |
| US9405357B2 (en) * | 2013-04-01 | 2016-08-02 | Advanced Micro Devices, Inc. | Distribution of power gating controls for hierarchical power domains |
-
2014
- 2014-04-28 JP JP2014092259A patent/JP6335616B2/ja not_active Expired - Fee Related
- 2014-04-29 US US14/264,359 patent/US10141053B2/en active Active
-
2018
- 2018-05-01 JP JP2018088150A patent/JP6505910B2/ja not_active Expired - Fee Related
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