JP2014232525A5 - - Google Patents

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Publication number
JP2014232525A5
JP2014232525A5 JP2014092259A JP2014092259A JP2014232525A5 JP 2014232525 A5 JP2014232525 A5 JP 2014232525A5 JP 2014092259 A JP2014092259 A JP 2014092259A JP 2014092259 A JP2014092259 A JP 2014092259A JP 2014232525 A5 JP2014232525 A5 JP 2014232525A5
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Japan
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operation mode
volatile memory
memory
processor
main memory
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JP2014092259A
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Japanese (ja)
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JP2014232525A (ja
JP6335616B2 (ja
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Priority claimed from JP2014092259A external-priority patent/JP6335616B2/ja
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Publication of JP2014232525A5 publication Critical patent/JP2014232525A5/ja
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Publication of JP6335616B2 publication Critical patent/JP6335616B2/ja
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JP2014092259A 2013-04-30 2014-04-28 半導体装置 Expired - Fee Related JP6335616B2 (ja)

Priority Applications (1)

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JP2014092259A JP6335616B2 (ja) 2013-04-30 2014-04-28 半導体装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2013095552 2013-04-30
JP2013095552 2013-04-30
JP2014092259A JP6335616B2 (ja) 2013-04-30 2014-04-28 半導体装置

Related Child Applications (1)

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JP2018088150A Division JP6505910B2 (ja) 2013-04-30 2018-05-01 半導体装置

Publications (3)

Publication Number Publication Date
JP2014232525A JP2014232525A (ja) 2014-12-11
JP2014232525A5 true JP2014232525A5 (enExample) 2017-06-15
JP6335616B2 JP6335616B2 (ja) 2018-05-30

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JP2014092259A Expired - Fee Related JP6335616B2 (ja) 2013-04-30 2014-04-28 半導体装置
JP2018088150A Expired - Fee Related JP6505910B2 (ja) 2013-04-30 2018-05-01 半導体装置

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US (1) US10141053B2 (enExample)
JP (2) JP6335616B2 (enExample)

Families Citing this family (38)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3225303B2 (ja) 1992-07-30 2001-11-05 シントーファイン株式会社 モノカルボン酸モリブデンの製造方法
US9853053B2 (en) 2012-09-10 2017-12-26 3B Technologies, Inc. Three dimension integrated circuits employing thin film transistors
TWI618058B (zh) 2013-05-16 2018-03-11 半導體能源研究所股份有限公司 半導體裝置
KR102529174B1 (ko) 2013-12-27 2023-05-08 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
JP6607681B2 (ja) 2014-03-07 2019-11-20 株式会社半導体エネルギー研究所 半導体装置
TWI767772B (zh) 2014-04-10 2022-06-11 日商半導體能源研究所股份有限公司 記憶體裝置及半導體裝置
WO2015170220A1 (en) 2014-05-09 2015-11-12 Semiconductor Energy Laboratory Co., Ltd. Memory device and electronic device
KR102398950B1 (ko) 2014-05-30 2022-05-17 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치, 이의 제조 방법, 및 전자 장치
JP5901698B2 (ja) * 2014-06-17 2016-04-13 インターナショナル・ビジネス・マシーンズ・コーポレーションＩｎｔｅｒｎａｔｉｏｎａｌ Ｂｕｓｉｎｅｓｓ Ｍａｃｈｉｎｅｓ Ｃｏｒｐｏｒａｔｉｏｎ メモリ管理方法
WO2016099580A2 (en) 2014-12-23 2016-06-23 Lupino James John Three dimensional integrated circuits employing thin film transistors
WO2016125044A1 (en) 2015-02-06 2016-08-11 Semiconductor Energy Laboratory Co., Ltd. Device, manufacturing method thereof, and electronic device
US9905700B2 (en) 2015-03-13 2018-02-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device or memory device and driving method thereof
KR102582523B1 (ko) 2015-03-19 2023-09-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 전자 기기
US9547361B2 (en) 2015-04-29 2017-01-17 Qualcomm Incorporated Methods and apparatuses for memory power reduction
KR102333566B1 (ko) * 2015-05-28 2021-12-01 인텔 코포레이션 비-휘발성 유지를 가지는 강유전성 기반 메모리 셀
US10978489B2 (en) 2015-07-24 2021-04-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, display panel, method for manufacturing semiconductor device, method for manufacturing display panel, and information processing device
US10116749B2 (en) * 2015-08-31 2018-10-30 The Boeing Company Method for providing flight management system data to peripheral devices
KR102653044B1 (ko) * 2015-09-01 2024-04-01 소니그룹주식회사 적층체
US9564217B1 (en) * 2015-10-19 2017-02-07 United Microelectronics Corp. Semiconductor memory device having integrated DOSRAM and NOSRAM
US9741400B2 (en) 2015-11-05 2017-08-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, memory device, electronic device, and method for operating the semiconductor device
WO2017103737A1 (en) 2015-12-18 2017-06-22 Semiconductor Energy Laboratory Co., Ltd. Display panel, input/output device, data processing device, and method for manufacturing display panel
JP6822853B2 (ja) 2016-01-21 2021-01-27 株式会社半導体エネルギー研究所 記憶装置及び記憶装置の駆動方法
US10411013B2 (en) 2016-01-22 2019-09-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and memory device
US9847105B2 (en) * 2016-02-01 2017-12-19 Samsung Electric Co., Ltd. Memory package, memory module including the same, and operation method of memory package
US9965220B2 (en) 2016-02-05 2018-05-08 Qualcomm Incorporated Forced idling of memory subsystems
EP3455855B1 (en) * 2016-05-11 2020-04-22 Atomera Incorporated Dram architecture to reduce row activation circuitry power and peripheral leakage and related methods
US10109342B2 (en) * 2016-05-11 2018-10-23 Atomera Incorporated Dram architecture to reduce row activation circuitry power and peripheral leakage and related methods
CN109643572A (zh) * 2016-09-12 2019-04-16 株式会社半导体能源研究所 存储装置及其工作方法、半导体装置、电子构件以及电子设备
US10599265B2 (en) 2016-11-17 2020-03-24 Semiconductor Energy Laboratory Co., Ltd. Electronic device and touch panel input method
WO2019175704A1 (ja) 2018-03-16 2019-09-19 株式会社半導体エネルギー研究所 電気モジュール、表示パネル、表示装置、入出力装置、情報処理装置、電気モジュールの作製方法
US10840240B2 (en) * 2018-10-24 2020-11-17 Micron Technology, Inc. Functional blocks implemented by 3D stacked integrated circuit
JP2020148591A (ja) 2019-03-13 2020-09-17 セイコーエプソン株式会社 時計および時計の制御方法
KR102639431B1 (ko) 2019-04-15 2024-02-22 양쯔 메모리 테크놀로지스 씨오., 엘티디. 프로세서 및 이종 메모리를 갖는 통합 반도체 디바이스 및 이를 형성하는 방법
KR20250099267A (ko) 2019-04-15 2025-07-01 양쯔 메모리 테크놀로지스 씨오., 엘티디. 프로세서 및 동적 랜덤 액세스 메모리를 갖는 본디드 반도체 장치 및 이를 형성하는 방법
JP7311615B2 (ja) * 2019-04-30 2023-07-19 長江存儲科技有限責任公司 プロセッサおよびｎａｎｄフラッシュメモリを有する接合半導体デバイスならびにそれを形成する方法
WO2020245688A1 (ja) * 2019-06-04 2020-12-10 株式会社半導体エネルギー研究所 半導体装置、半導体ウエハ、及び電子機器
CN110764020B (zh) * 2019-10-30 2022-01-14 深圳市泰昂能源科技股份有限公司 变电站长电缆剩余电流检测方法、装置、设备及存储介质
WO2023209491A1 (ja) * 2022-04-29 2023-11-02 株式会社半導体エネルギー研究所 半導体装置

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0973777A (ja) * 1995-09-04 1997-03-18 Matsushita Electric Ind Co Ltd メモリ装置
TW591372B (en) * 2003-05-15 2004-06-11 High Tech Comp Corp Power control method of portable electronic device, portable electronic device and electronic system
JP4463503B2 (ja) * 2003-07-15 2010-05-19 株式会社ルネサステクノロジ メモリモジュール及びメモリシステム
US8010764B2 (en) * 2005-07-07 2011-08-30 International Business Machines Corporation Method and system for decreasing power consumption in memory arrays having usage-driven power management
US7443759B1 (en) * 2006-04-30 2008-10-28 Sun Microsystems, Inc. Reduced-power memory with per-sector ground control
US20080005516A1 (en) * 2006-06-30 2008-01-03 Meinschein Robert J Memory power management through high-speed intra-memory data transfer and dynamic memory address remapping
US20080147457A1 (en) * 2006-12-15 2008-06-19 Rapp Roman A Systems and methods for handling attributes used for assignment generation in a value flow environment
JP5099317B2 (ja) 2007-05-17 2012-12-19 村田機械株式会社 電子機器
JP5012898B2 (ja) * 2007-07-18 2012-08-29 富士通株式会社 メモリリフレッシュ装置およびメモリリフレッシュ方法
KR101474344B1 (ko) * 2008-07-11 2014-12-18 시게이트 테크놀로지 엘엘씨 캐시 플러시 제어 방법 및 이를 이용한 데이터 저장 시스템
US8392736B2 (en) * 2009-07-31 2013-03-05 Hewlett-Packard Development Company, L.P. Managing memory power usage
US8296496B2 (en) * 2009-09-17 2012-10-23 Hewlett-Packard Development Company, L.P. Main memory with non-volatile memory and DRAM
JP5582944B2 (ja) 2009-09-28 2014-09-03 京セラ株式会社 配線基板、積層板及び積層シート
KR101473684B1 (ko) * 2009-12-25 2014-12-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
JP2012033002A (ja) 2010-07-30 2012-02-16 Toshiba Corp メモリ管理装置およびメモリ管理方法
JP5553309B2 (ja) 2010-08-11 2014-07-16 国立大学法人 東京大学 データ処理装置
JP2012064158A (ja) 2010-09-17 2012-03-29 Toshiba Corp メモリ管理装置及びメモリ管理方法
US8990538B2 (en) * 2010-11-05 2015-03-24 Microsoft Corporation Managing memory with limited write cycles in heterogeneous memory systems
US9235500B2 (en) * 2010-12-07 2016-01-12 Microsoft Technology Licensing, Llc Dynamic memory allocation and relocation to create low power regions
US9405357B2 (en) * 2013-04-01 2016-08-02 Advanced Micro Devices, Inc. Distribution of power gating controls for hierarchical power domains

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