JP2013250962A5 - - Google Patents

Download PDF

Info

Publication number
JP2013250962A5
JP2013250962A5 JP2013094859A JP2013094859A JP2013250962A5 JP 2013250962 A5 JP2013250962 A5 JP 2013250962A5 JP 2013094859 A JP2013094859 A JP 2013094859A JP 2013094859 A JP2013094859 A JP 2013094859A JP 2013250962 A5 JP2013250962 A5 JP 2013250962A5
Authority
JP
Japan
Prior art keywords
data
cache memory
semiconductor device
cpu
thru
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2013094859A
Other languages
English (en)
Japanese (ja)
Other versions
JP2013250962A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2013094859A priority Critical patent/JP2013250962A/ja
Priority claimed from JP2013094859A external-priority patent/JP2013250962A/ja
Publication of JP2013250962A publication Critical patent/JP2013250962A/ja
Publication of JP2013250962A5 publication Critical patent/JP2013250962A5/ja
Withdrawn legal-status Critical Current

Links

JP2013094859A 2012-05-01 2013-04-29 半導体装置 Withdrawn JP2013250962A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2013094859A JP2013250962A (ja) 2012-05-01 2013-04-29 半導体装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2012104839 2012-05-01
JP2012104839 2012-05-01
JP2013094859A JP2013250962A (ja) 2012-05-01 2013-04-29 半導体装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2017245733A Division JP6655596B2 (ja) 2012-05-01 2017-12-22 半導体装置

Publications (2)

Publication Number Publication Date
JP2013250962A JP2013250962A (ja) 2013-12-12
JP2013250962A5 true JP2013250962A5 (enExample) 2016-05-19

Family

ID=49513548

Family Applications (3)

Application Number Title Priority Date Filing Date
JP2013094859A Withdrawn JP2013250962A (ja) 2012-05-01 2013-04-29 半導体装置
JP2017245733A Expired - Fee Related JP6655596B2 (ja) 2012-05-01 2017-12-22 半導体装置
JP2020016557A Withdrawn JP2020080164A (ja) 2012-05-01 2020-02-03 半導体装置

Family Applications After (2)

Application Number Title Priority Date Filing Date
JP2017245733A Expired - Fee Related JP6655596B2 (ja) 2012-05-01 2017-12-22 半導体装置
JP2020016557A Withdrawn JP2020080164A (ja) 2012-05-01 2020-02-03 半導体装置

Country Status (2)

Country Link
US (1) US9703704B2 (enExample)
JP (3) JP2013250962A (enExample)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6396671B2 (ja) 2013-04-26 2018-09-26 株式会社半導体エネルギー研究所 半導体装置
US9245593B2 (en) 2013-10-16 2016-01-26 Semiconductor Energy Laboratory Co., Ltd. Method for driving arithmetic processing unit
TWI621127B (zh) 2013-10-18 2018-04-11 半導體能源研究所股份有限公司 運算處理裝置及其驅動方法
KR102398965B1 (ko) 2014-03-20 2022-05-17 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치, 전자 부품, 및 전자 기기
KR102581808B1 (ko) 2014-12-18 2023-09-21 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치, 센서 장치, 및 전자 기기
US9785552B2 (en) * 2015-01-14 2017-10-10 Kabushiki Kaisha Toshiba Computer system including virtual memory or cache
US9443564B2 (en) 2015-01-26 2016-09-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, electronic component, and electronic device
JP6414035B2 (ja) * 2015-12-03 2018-10-31 京セラドキュメントソリューションズ株式会社 画像形成装置
CN109478883A (zh) 2016-07-19 2019-03-15 株式会社半导体能源研究所 半导体装置
US10120470B2 (en) 2016-07-22 2018-11-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, display device and electronic device
US10797706B2 (en) 2016-12-27 2020-10-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
CN109725182A (zh) * 2018-07-25 2019-05-07 北京航天三优科技有限公司 一种模块化测试机箱内单模块上电控制系统及控制方法
US20220236785A1 (en) * 2019-06-04 2022-07-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, semiconductor wafer, and electronic device
KR20220017474A (ko) 2019-06-07 2022-02-11 가부시키가이샤 한도오따이 에네루기 켄큐쇼 복합 디바이스
KR20220084063A (ko) 2019-10-17 2022-06-21 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
WO2021111248A1 (ja) * 2019-12-06 2021-06-10 株式会社半導体エネルギー研究所 操作装置および情報処理システム
US12124729B2 (en) * 2021-04-13 2024-10-22 Micron Technology, Inc. Controller to alter systems based on metrics and telemetry

Family Cites Families (119)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4017741A (en) * 1975-11-13 1977-04-12 Rca Corporation Dynamic shift register cell
JPS60198861A (ja) 1984-03-23 1985-10-08 Fujitsu Ltd 薄膜トランジスタ
JPH0244256B2 (ja) 1987-01-28 1990-10-03 Kagaku Gijutsucho Mukizaishitsu Kenkyushocho Ingazn2o5deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho
JPS63210023A (ja) 1987-02-24 1988-08-31 Natl Inst For Res In Inorg Mater InGaZn↓4O↓7で示される六方晶系の層状構造を有する化合物およびその製造法
JPH0244258B2 (ja) 1987-02-24 1990-10-03 Kagaku Gijutsucho Mukizaishitsu Kenkyushocho Ingazn3o6deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho
JPH0244260B2 (ja) 1987-02-24 1990-10-03 Kagaku Gijutsucho Mukizaishitsu Kenkyushocho Ingazn5o8deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho
JPH0244262B2 (ja) 1987-02-27 1990-10-03 Kagaku Gijutsucho Mukizaishitsu Kenkyushocho Ingazn6o9deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho
JPH0244263B2 (ja) 1987-04-22 1990-10-03 Kagaku Gijutsucho Mukizaishitsu Kenkyushocho Ingazn7o10deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho
US5430881A (en) 1990-12-28 1995-07-04 Dia Semicon Systems Incorporated Supervisory control method and power saving control unit for computer system
JPH0695303B2 (ja) 1990-12-28 1994-11-24 ダイヤセミコンシステムズ株式会社 コンピュータシステムの状態監視方法および節電制御装置
WO1993013480A1 (fr) 1991-12-26 1993-07-08 Dia Semicon Systems Incorporated Procede d'examen de conditions pour systeme d'ordinateur et controleur d'economie d'energie
JPH05251705A (ja) 1992-03-04 1993-09-28 Fuji Xerox Co Ltd 薄膜トランジスタ
JPH086681A (ja) 1994-04-18 1996-01-12 Hitachi Ltd 省電力制御システム
JP3479375B2 (ja) 1995-03-27 2003-12-15 科学技術振興事業団 亜酸化銅等の金属酸化物半導体による薄膜トランジスタとpn接合を形成した金属酸化物半導体装置およびそれらの製造方法
EP0820644B1 (en) 1995-08-03 2005-08-24 Koninklijke Philips Electronics N.V. Semiconductor device provided with transparent switching element
JP3625598B2 (ja) 1995-12-30 2005-03-02 三星電子株式会社 液晶表示装置の製造方法
JP4103968B2 (ja) 1996-09-18 2008-06-18 株式会社半導体エネルギー研究所 絶縁ゲイト型半導体装置
JP4170454B2 (ja) 1998-07-24 2008-10-22 Hoya株式会社 透明導電性酸化物薄膜を有する物品及びその製造方法
US6591347B2 (en) * 1998-10-09 2003-07-08 National Semiconductor Corporation Dynamic replacement technique in a shared cache
JP2000150861A (ja) 1998-11-16 2000-05-30 Tdk Corp 酸化物薄膜
JP3276930B2 (ja) 1998-11-17 2002-04-22 科学技術振興事業団 トランジスタ及び半導体装置
JP2001028564A (ja) 1999-07-13 2001-01-30 Nec Corp 携帯データ通信機器およびその電源制御方法
TW460731B (en) 1999-09-03 2001-10-21 Ind Tech Res Inst Electrode structure and production method of wide viewing angle LCD
JP4089858B2 (ja) 2000-09-01 2008-05-28 国立大学法人東北大学 半導体デバイス
JP2002108702A (ja) 2000-10-03 2002-04-12 Hitachi Ltd マイクロコンピュータ及びデータ処理装置
US6983388B2 (en) * 2000-10-25 2006-01-03 Agere Systems Inc. Method and apparatus for reducing leakage power in a cache memory by using a timer control signal that removes power to associated cache lines
KR20020038482A (ko) 2000-11-15 2002-05-23 모리시타 요이찌 박막 트랜지스터 어레이, 그 제조방법 및 그것을 이용한표시패널
US6564286B2 (en) * 2001-03-07 2003-05-13 Sony Corporation Non-volatile memory system for instant-on
JP3997731B2 (ja) 2001-03-19 2007-10-24 富士ゼロックス株式会社 基材上に結晶性半導体薄膜を形成する方法
JP2002289859A (ja) 2001-03-23 2002-10-04 Minolta Co Ltd 薄膜トランジスタ
JP3925839B2 (ja) 2001-09-10 2007-06-06 シャープ株式会社 半導体記憶装置およびその試験方法
JP4090716B2 (ja) 2001-09-10 2008-05-28 雅司 川崎 薄膜トランジスタおよびマトリクス表示装置
WO2003040441A1 (fr) 2001-11-05 2003-05-15 Japan Science And Technology Agency Film mince monocristallin homologue a super-reseau naturel, procede de preparation et dispositif dans lequel est utilise ledit film mince monocristallin
JP4164562B2 (ja) 2002-09-11 2008-10-15 独立行政法人科学技術振興機構 ホモロガス薄膜を活性層として用いる透明薄膜電界効果型トランジスタ
JP4083486B2 (ja) 2002-02-21 2008-04-30 独立行政法人科学技術振興機構 LnCuO(S,Se,Te)単結晶薄膜の製造方法
CN1445821A (zh) 2002-03-15 2003-10-01 三洋电机株式会社 ZnO膜和ZnO半导体层的形成方法、半导体元件及其制造方法
JP3933591B2 (ja) 2002-03-26 2007-06-20 淳二 城戸 有機エレクトロルミネッセント素子
US7339187B2 (en) 2002-05-21 2008-03-04 State Of Oregon Acting By And Through The Oregon State Board Of Higher Education On Behalf Of Oregon State University Transistor structures
JP2004022625A (ja) 2002-06-13 2004-01-22 Murata Mfg Co Ltd 半導体デバイス及び該半導体デバイスの製造方法
US7105868B2 (en) 2002-06-24 2006-09-12 Cermet, Inc. High-electron mobility transistor with zinc oxide
US7067843B2 (en) 2002-10-11 2006-06-27 E. I. Du Pont De Nemours And Company Transparent oxide semiconductor thin film transistors
JP4166105B2 (ja) 2003-03-06 2008-10-15 シャープ株式会社 半導体装置およびその製造方法
JP2004273732A (ja) 2003-03-07 2004-09-30 Sharp Corp アクティブマトリクス基板およびその製造方法
JP4108633B2 (ja) 2003-06-20 2008-06-25 シャープ株式会社 薄膜トランジスタおよびその製造方法ならびに電子デバイス
US7262463B2 (en) 2003-07-25 2007-08-28 Hewlett-Packard Development Company, L.P. Transistor including a deposited channel region having a doped portion
US7145174B2 (en) 2004-03-12 2006-12-05 Hewlett-Packard Development Company, Lp. Semiconductor device
US7282782B2 (en) 2004-03-12 2007-10-16 Hewlett-Packard Development Company, L.P. Combined binary oxide semiconductor device
US7297977B2 (en) 2004-03-12 2007-11-20 Hewlett-Packard Development Company, L.P. Semiconductor device
CN1998087B (zh) 2004-03-12 2014-12-31 独立行政法人科学技术振兴机构 非晶形氧化物和薄膜晶体管
US7211825B2 (en) 2004-06-14 2007-05-01 Yi-Chi Shih Indium oxide-based thin film transistors and circuits
JP2006100760A (ja) 2004-09-02 2006-04-13 Casio Comput Co Ltd 薄膜トランジスタおよびその製造方法
US7285501B2 (en) 2004-09-17 2007-10-23 Hewlett-Packard Development Company, L.P. Method of forming a solution processed device
US7298084B2 (en) 2004-11-02 2007-11-20 3M Innovative Properties Company Methods and displays utilizing integrated zinc oxide row and column drivers in conjunction with organic light emitting diodes
US7868326B2 (en) 2004-11-10 2011-01-11 Canon Kabushiki Kaisha Field effect transistor
US7453065B2 (en) 2004-11-10 2008-11-18 Canon Kabushiki Kaisha Sensor and image pickup device
US7829444B2 (en) 2004-11-10 2010-11-09 Canon Kabushiki Kaisha Field effect transistor manufacturing method
KR20070085879A (ko) 2004-11-10 2007-08-27 캐논 가부시끼가이샤 발광 장치
US7863611B2 (en) 2004-11-10 2011-01-04 Canon Kabushiki Kaisha Integrated circuits utilizing amorphous oxides
CA2585190A1 (en) 2004-11-10 2006-05-18 Canon Kabushiki Kaisha Amorphous oxide and field effect transistor
US7791072B2 (en) 2004-11-10 2010-09-07 Canon Kabushiki Kaisha Display
US7579224B2 (en) 2005-01-21 2009-08-25 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing a thin film semiconductor device
TWI472037B (zh) 2005-01-28 2015-02-01 半導體能源研究所股份有限公司 半導體裝置,電子裝置,和半導體裝置的製造方法
TWI569441B (zh) 2005-01-28 2017-02-01 半導體能源研究所股份有限公司 半導體裝置,電子裝置,和半導體裝置的製造方法
US7858451B2 (en) 2005-02-03 2010-12-28 Semiconductor Energy Laboratory Co., Ltd. Electronic device, semiconductor device and manufacturing method thereof
US7948171B2 (en) 2005-02-18 2011-05-24 Semiconductor Energy Laboratory Co., Ltd. Light emitting device
US20060197092A1 (en) 2005-03-03 2006-09-07 Randy Hoffman System and method for forming conductive material on a substrate
US8681077B2 (en) 2005-03-18 2014-03-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, and display device, driving method and electronic apparatus thereof
US7544967B2 (en) 2005-03-28 2009-06-09 Massachusetts Institute Of Technology Low voltage flexible organic/transparent transistor for selective gas sensing, photodetecting and CMOS device applications
US7645478B2 (en) 2005-03-31 2010-01-12 3M Innovative Properties Company Methods of making displays
JP4364878B2 (ja) 2005-03-31 2009-11-18 株式会社半導体エネルギー研究所 演算処理装置
CN101151599B (zh) 2005-03-31 2011-08-03 株式会社半导体能源研究所 算术处理装置和使用算术处理装置的电子设备
US8300031B2 (en) 2005-04-20 2012-10-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising transistor having gate and drain connected through a current-voltage conversion element
WO2006120507A1 (en) 2005-05-11 2006-11-16 Freescale Semiconductor, Inc. Method for power reduction and a device having power reduction capabilities
JP2006344849A (ja) 2005-06-10 2006-12-21 Casio Comput Co Ltd 薄膜トランジスタ
US7691666B2 (en) 2005-06-16 2010-04-06 Eastman Kodak Company Methods of making thin film transistors comprising zinc-oxide-based semiconductor materials and transistors made thereby
US7402506B2 (en) 2005-06-16 2008-07-22 Eastman Kodak Company Methods of making thin film transistors comprising zinc-oxide-based semiconductor materials and transistors made thereby
US7507618B2 (en) 2005-06-27 2009-03-24 3M Innovative Properties Company Method for making electronic devices using metal oxide nanoparticles
KR100711890B1 (ko) 2005-07-28 2007-04-25 삼성에스디아이 주식회사 유기 발광표시장치 및 그의 제조방법
JP2007059128A (ja) 2005-08-23 2007-03-08 Canon Inc 有機el表示装置およびその製造方法
JP5116225B2 (ja) 2005-09-06 2013-01-09 キヤノン株式会社 酸化物半導体デバイスの製造方法
JP2007073705A (ja) 2005-09-06 2007-03-22 Canon Inc 酸化物半導体チャネル薄膜トランジスタおよびその製造方法
JP4850457B2 (ja) 2005-09-06 2012-01-11 キヤノン株式会社 薄膜トランジスタ及び薄膜ダイオード
JP4280736B2 (ja) 2005-09-06 2009-06-17 キヤノン株式会社 半導体素子
EP1998373A3 (en) 2005-09-29 2012-10-31 Semiconductor Energy Laboratory Co, Ltd. Semiconductor device having oxide semiconductor layer and manufacturing method thereof
JP5037808B2 (ja) 2005-10-20 2012-10-03 キヤノン株式会社 アモルファス酸化物を用いた電界効果型トランジスタ、及び該トランジスタを用いた表示装置
WO2007058329A1 (en) 2005-11-15 2007-05-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
TWI292281B (en) 2005-12-29 2008-01-01 Ind Tech Res Inst Pixel structure of active organic light emitting diode and method of fabricating the same
US7867636B2 (en) 2006-01-11 2011-01-11 Murata Manufacturing Co., Ltd. Transparent conductive film and method for manufacturing the same
JP4977478B2 (ja) 2006-01-21 2012-07-18 三星電子株式会社 ZnOフィルム及びこれを用いたTFTの製造方法
US7576394B2 (en) 2006-02-02 2009-08-18 Kochi Industrial Promotion Center Thin film transistor including low resistance conductive thin films and manufacturing method thereof
US7977169B2 (en) 2006-02-15 2011-07-12 Kochi Industrial Promotion Center Semiconductor device including active layer made of zinc oxide with controlled orientations and manufacturing method thereof
KR20070101595A (ko) 2006-04-11 2007-10-17 삼성전자주식회사 ZnO TFT
US20070252928A1 (en) 2006-04-28 2007-11-01 Toppan Printing Co., Ltd. Structure, transmission type liquid crystal display, reflection type display and manufacturing method thereof
JP5028033B2 (ja) 2006-06-13 2012-09-19 キヤノン株式会社 酸化物半導体膜のドライエッチング方法
JP4999400B2 (ja) 2006-08-09 2012-08-15 キヤノン株式会社 酸化物半導体膜のドライエッチング方法
JP4609797B2 (ja) 2006-08-09 2011-01-12 Nec液晶テクノロジー株式会社 薄膜デバイス及びその製造方法
JP4332545B2 (ja) 2006-09-15 2009-09-16 キヤノン株式会社 電界効果型トランジスタ及びその製造方法
JP4274219B2 (ja) 2006-09-27 2009-06-03 セイコーエプソン株式会社 電子デバイス、有機エレクトロルミネッセンス装置、有機薄膜半導体装置
JP5164357B2 (ja) 2006-09-27 2013-03-21 キヤノン株式会社 半導体装置及び半導体装置の製造方法
US7622371B2 (en) 2006-10-10 2009-11-24 Hewlett-Packard Development Company, L.P. Fused nanocrystal thin film semiconductor and method
US7772021B2 (en) 2006-11-29 2010-08-10 Samsung Electronics Co., Ltd. Flat panel displays comprising a thin-film transistor having a semiconductive oxide in its channel and methods of fabricating the same for use in flat panel displays
JP2008140684A (ja) 2006-12-04 2008-06-19 Toppan Printing Co Ltd カラーelディスプレイおよびその製造方法
KR101303578B1 (ko) 2007-01-05 2013-09-09 삼성전자주식회사 박막 식각 방법
US8207063B2 (en) 2007-01-26 2012-06-26 Eastman Kodak Company Process for atomic layer deposition
KR100851215B1 (ko) 2007-03-14 2008-08-07 삼성에스디아이 주식회사 박막 트랜지스터 및 이를 이용한 유기 전계 발광표시장치
JP4519151B2 (ja) 2007-03-20 2010-08-04 富士通株式会社 キャッシュ制御回路
US7795613B2 (en) 2007-04-17 2010-09-14 Toppan Printing Co., Ltd. Structure with transistor
KR101325053B1 (ko) 2007-04-18 2013-11-05 삼성디스플레이 주식회사 박막 트랜지스터 기판 및 이의 제조 방법
KR20080094300A (ko) 2007-04-19 2008-10-23 삼성전자주식회사 박막 트랜지스터 및 그 제조 방법과 박막 트랜지스터를포함하는 평판 디스플레이
KR101334181B1 (ko) 2007-04-20 2013-11-28 삼성전자주식회사 선택적으로 결정화된 채널층을 갖는 박막 트랜지스터 및 그제조 방법
CN101663762B (zh) 2007-04-25 2011-09-21 佳能株式会社 氧氮化物半导体
KR101345376B1 (ko) 2007-05-29 2013-12-24 삼성전자주식회사 ZnO 계 박막 트랜지스터 및 그 제조방법
JP2008305305A (ja) 2007-06-11 2008-12-18 Renesas Technology Corp キャッシュメモリシステム
JP5215158B2 (ja) 2007-12-17 2013-06-19 富士フイルム株式会社 無機結晶性配向膜及びその製造方法、半導体デバイス
JP4623179B2 (ja) 2008-09-18 2011-02-02 ソニー株式会社 薄膜トランジスタおよびその製造方法
JP5451280B2 (ja) 2008-10-09 2014-03-26 キヤノン株式会社 ウルツ鉱型結晶成長用基板およびその製造方法ならびに半導体装置
JP5781720B2 (ja) 2008-12-15 2015-09-24 ルネサスエレクトロニクス株式会社 半導体装置及び半導体装置の製造方法
US20100281222A1 (en) * 2009-04-29 2010-11-04 Faraday Technology Corp. Cache system and controlling method thereof
JP5803614B2 (ja) * 2011-11-29 2015-11-04 ソニー株式会社 不揮発性キャッシュメモリ、不揮発性キャッシュメモリの処理方法、コンピュータシステム

Similar Documents

Publication Publication Date Title
JP2013250962A5 (enExample)
CO2018008835A2 (es) Procesador con núcleo canalizado algoritmico reconfigurable y compilador canalizado de correlacion algoritmica
WO2016048513A3 (en) Power management for memory accesses in a system-on-chip
PH12016500339A1 (en) Ascertaining command completion in flash memories
JP2014232525A5 (enExample)
WO2015050594A3 (en) Methods and apparatus for parallel processing
BR112014007398A2 (pt) método, artigo e dispositivo eletrônico
JP2018501569A5 (enExample)
GB2526040A (en) Instruction for performing a pseudorandom number generate operation
MX388338B (es) Sistemas y metodos para recolectar, rastrear y almacenar datos de rendimiento de sistema y de evento para dispositivos informaticos.
GB2518101A (en) Configuring power management functionality in a processor
JP2013077375A5 (enExample)
JP2014123354A5 (enExample)
MY180992A (en) Memory latency management
GB2526485A (en) Instruction for performing pseudorandom number seed operation
BR112016001014A2 (pt) Computing architecture with peripherals
EA201591223A1 (ru) Полупроводниковое устройство, обладающее свойствами для предотвращения обратного проектирования
EP3840482A4 (en) WAKE-UP PROCESS, WAKE-UP DEVICE, ELECTRONIC DEVICE AND COMPUTER-READABLE STORAGE MEDIA
BR112015013051A2 (pt) gerenciamento de alimentação de dispositivos de comunicação
JP2018502425A5 (enExample)
JP2015072542A5 (enExample)
BR112017019451A2 (pt) dispositivo de controle de conversor de energia
JP2015133134A5 (enExample)
MX2018001255A (es) SISTEMA Y Mí‰TODO PARA LA CREACIí“N Y USO DE ESTRUCTURAS DE DATOS VISUALES DINíMICOS DE CALIDAD ALTA VISUALMENTE DIVERSOS.
JP2018501609A5 (enExample)