JP6335616B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP6335616B2
JP6335616B2 JP2014092259A JP2014092259A JP6335616B2 JP 6335616 B2 JP6335616 B2 JP 6335616B2 JP 2014092259 A JP2014092259 A JP 2014092259A JP 2014092259 A JP2014092259 A JP 2014092259A JP 6335616 B2 JP6335616 B2 JP 6335616B2
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JP
Japan
Prior art keywords
memory
processor
ram
transistor
main memory
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
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JP2014092259A
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English (en)
Japanese (ja)
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JP2014232525A (ja
JP2014232525A5 (enExample
Inventor
耕平 豊高
耕平 豊高
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP2014092259A priority Critical patent/JP6335616B2/ja
Publication of JP2014232525A publication Critical patent/JP2014232525A/ja
Publication of JP2014232525A5 publication Critical patent/JP2014232525A5/ja
Application granted granted Critical
Publication of JP6335616B2 publication Critical patent/JP6335616B2/ja
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C14/00—Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down
    • G11C14/0009—Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down in which the volatile element is a DRAM cell
    • G11C14/0018—Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down in which the volatile element is a DRAM cell whereby the nonvolatile element is an EEPROM element, e.g. a floating gate or metal-nitride-oxide-silicon [MNOS] transistor
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F1/00—Details not covered by groups G06F3/00 - G06F13/00 and G06F21/00
    • G06F1/26—Power supply means, e.g. regulation thereof
    • G06F1/32—Means for saving power
    • G06F1/3203—Power management, i.e. event-based initiation of a power-saving mode
    • G06F1/3234—Power saving characterised by the action undertaken
    • G06F1/325—Power saving in peripheral device
    • G06F1/3268—Power saving in hard disk drive
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F1/00—Details not covered by groups G06F3/00 - G06F13/00 and G06F21/00
    • G06F1/26—Power supply means, e.g. regulation thereof
    • G06F1/32—Means for saving power
    • G06F1/3203—Power management, i.e. event-based initiation of a power-saving mode
    • G06F1/3234—Power saving characterised by the action undertaken
    • G06F1/325—Power saving in peripheral device
    • G06F1/3275—Power saving in memory, e.g. RAM, cache
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02D—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN INFORMATION AND COMMUNICATION TECHNOLOGIES [ICT], I.E. INFORMATION AND COMMUNICATION TECHNOLOGIES AIMING AT THE REDUCTION OF THEIR OWN ENERGY USE
    • Y02D10/00—Energy efficient computing, e.g. low power processors, power management or thermal management

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  • Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Memories (AREA)
  • Memory System (AREA)
  • Thin Film Transistor (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)
  • Dram (AREA)
  • Non-Volatile Memory (AREA)
  • Power Sources (AREA)
JP2014092259A 2013-04-30 2014-04-28 半導体装置 Expired - Fee Related JP6335616B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2014092259A JP6335616B2 (ja) 2013-04-30 2014-04-28 半導体装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2013095552 2013-04-30
JP2013095552 2013-04-30
JP2014092259A JP6335616B2 (ja) 2013-04-30 2014-04-28 半導体装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2018088150A Division JP6505910B2 (ja) 2013-04-30 2018-05-01 半導体装置

Publications (3)

Publication Number Publication Date
JP2014232525A JP2014232525A (ja) 2014-12-11
JP2014232525A5 JP2014232525A5 (enExample) 2017-06-15
JP6335616B2 true JP6335616B2 (ja) 2018-05-30

Family

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Family Applications (2)

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JP2014092259A Expired - Fee Related JP6335616B2 (ja) 2013-04-30 2014-04-28 半導体装置
JP2018088150A Expired - Fee Related JP6505910B2 (ja) 2013-04-30 2018-05-01 半導体装置

Family Applications After (1)

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JP2018088150A Expired - Fee Related JP6505910B2 (ja) 2013-04-30 2018-05-01 半導体装置

Country Status (2)

Country Link
US (1) US10141053B2 (enExample)
JP (2) JP6335616B2 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3225303B2 (ja) 1992-07-30 2001-11-05 シントーファイン株式会社 モノカルボン酸モリブデンの製造方法

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KR102529174B1 (ko) 2013-12-27 2023-05-08 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
JP6607681B2 (ja) 2014-03-07 2019-11-20 株式会社半導体エネルギー研究所 半導体装置
TWI767772B (zh) 2014-04-10 2022-06-11 日商半導體能源研究所股份有限公司 記憶體裝置及半導體裝置
WO2015170220A1 (en) 2014-05-09 2015-11-12 Semiconductor Energy Laboratory Co., Ltd. Memory device and electronic device
KR102398950B1 (ko) 2014-05-30 2022-05-17 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치, 이의 제조 방법, 및 전자 장치
JP5901698B2 (ja) * 2014-06-17 2016-04-13 インターナショナル・ビジネス・マシーンズ・コーポレーションＩｎｔｅｒｎａｔｉｏｎａｌ Ｂｕｓｉｎｅｓｓ Ｍａｃｈｉｎｅｓ Ｃｏｒｐｏｒａｔｉｏｎ メモリ管理方法
WO2016099580A2 (en) 2014-12-23 2016-06-23 Lupino James John Three dimensional integrated circuits employing thin film transistors
WO2016125044A1 (en) 2015-02-06 2016-08-11 Semiconductor Energy Laboratory Co., Ltd. Device, manufacturing method thereof, and electronic device
US9905700B2 (en) 2015-03-13 2018-02-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device or memory device and driving method thereof
KR102582523B1 (ko) 2015-03-19 2023-09-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 전자 기기
US9547361B2 (en) 2015-04-29 2017-01-17 Qualcomm Incorporated Methods and apparatuses for memory power reduction
KR102333566B1 (ko) * 2015-05-28 2021-12-01 인텔 코포레이션 비-휘발성 유지를 가지는 강유전성 기반 메모리 셀
US10978489B2 (en) 2015-07-24 2021-04-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, display panel, method for manufacturing semiconductor device, method for manufacturing display panel, and information processing device
US10116749B2 (en) * 2015-08-31 2018-10-30 The Boeing Company Method for providing flight management system data to peripheral devices
KR102653044B1 (ko) * 2015-09-01 2024-04-01 소니그룹주식회사 적층체
US9564217B1 (en) * 2015-10-19 2017-02-07 United Microelectronics Corp. Semiconductor memory device having integrated DOSRAM and NOSRAM
US9741400B2 (en) 2015-11-05 2017-08-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, memory device, electronic device, and method for operating the semiconductor device
WO2017103737A1 (en) 2015-12-18 2017-06-22 Semiconductor Energy Laboratory Co., Ltd. Display panel, input/output device, data processing device, and method for manufacturing display panel
JP6822853B2 (ja) 2016-01-21 2021-01-27 株式会社半導体エネルギー研究所 記憶装置及び記憶装置の駆動方法
US10411013B2 (en) 2016-01-22 2019-09-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and memory device
US9847105B2 (en) * 2016-02-01 2017-12-19 Samsung Electric Co., Ltd. Memory package, memory module including the same, and operation method of memory package
US9965220B2 (en) 2016-02-05 2018-05-08 Qualcomm Incorporated Forced idling of memory subsystems
EP3455855B1 (en) * 2016-05-11 2020-04-22 Atomera Incorporated Dram architecture to reduce row activation circuitry power and peripheral leakage and related methods
US10109342B2 (en) * 2016-05-11 2018-10-23 Atomera Incorporated Dram architecture to reduce row activation circuitry power and peripheral leakage and related methods
CN109643572A (zh) * 2016-09-12 2019-04-16 株式会社半导体能源研究所 存储装置及其工作方法、半导体装置、电子构件以及电子设备
US10599265B2 (en) 2016-11-17 2020-03-24 Semiconductor Energy Laboratory Co., Ltd. Electronic device and touch panel input method
WO2019175704A1 (ja) 2018-03-16 2019-09-19 株式会社半導体エネルギー研究所 電気モジュール、表示パネル、表示装置、入出力装置、情報処理装置、電気モジュールの作製方法
US10840240B2 (en) * 2018-10-24 2020-11-17 Micron Technology, Inc. Functional blocks implemented by 3D stacked integrated circuit
JP2020148591A (ja) 2019-03-13 2020-09-17 セイコーエプソン株式会社 時計および時計の制御方法
KR102639431B1 (ko) 2019-04-15 2024-02-22 양쯔 메모리 테크놀로지스 씨오., 엘티디. 프로세서 및 이종 메모리를 갖는 통합 반도체 디바이스 및 이를 형성하는 방법
KR20250099267A (ko) 2019-04-15 2025-07-01 양쯔 메모리 테크놀로지스 씨오., 엘티디. 프로세서 및 동적 랜덤 액세스 메모리를 갖는 본디드 반도체 장치 및 이를 형성하는 방법
JP7311615B2 (ja) * 2019-04-30 2023-07-19 長江存儲科技有限責任公司 プロセッサおよびｎａｎｄフラッシュメモリを有する接合半導体デバイスならびにそれを形成する方法
WO2020245688A1 (ja) * 2019-06-04 2020-12-10 株式会社半導体エネルギー研究所 半導体装置、半導体ウエハ、及び電子機器
CN110764020B (zh) * 2019-10-30 2022-01-14 深圳市泰昂能源科技股份有限公司 变电站长电缆剩余电流检测方法、装置、设备及存储介质
WO2023209491A1 (ja) * 2022-04-29 2023-11-02 株式会社半導体エネルギー研究所 半導体装置

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3225303B2 (ja) 1992-07-30 2001-11-05 シントーファイン株式会社 モノカルボン酸モリブデンの製造方法

Also Published As

Publication number Publication date
JP2018163666A (ja) 2018-10-18
JP2014232525A (ja) 2014-12-11
US10141053B2 (en) 2018-11-27
JP6505910B2 (ja) 2019-04-24
US20140325249A1 (en) 2014-10-30

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