JP2010287303A5 - - Google Patents
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- Publication number
- JP2010287303A5 JP2010287303A5 JP2010110382A JP2010110382A JP2010287303A5 JP 2010287303 A5 JP2010287303 A5 JP 2010287303A5 JP 2010110382 A JP2010110382 A JP 2010110382A JP 2010110382 A JP2010110382 A JP 2010110382A JP 2010287303 A5 JP2010287303 A5 JP 2010287303A5
- Authority
- JP
- Japan
- Prior art keywords
- recording
- flash memory
- writing
- page
- time
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000015654 memory Effects 0.000 claims 21
- 239000004065 semiconductor Substances 0.000 claims 8
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2010110382A JP5480714B2 (ja) | 2009-05-15 | 2010-05-12 | 半導体記録装置 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2009118586 | 2009-05-15 | ||
| JP2009118586 | 2009-05-15 | ||
| JP2010110382A JP5480714B2 (ja) | 2009-05-15 | 2010-05-12 | 半導体記録装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2010287303A JP2010287303A (ja) | 2010-12-24 |
| JP2010287303A5 true JP2010287303A5 (enExample) | 2013-05-16 |
| JP5480714B2 JP5480714B2 (ja) | 2014-04-23 |
Family
ID=43355282
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2010110382A Active JP5480714B2 (ja) | 2009-05-15 | 2010-05-12 | 半導体記録装置 |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US8407405B2 (enExample) |
| JP (1) | JP5480714B2 (enExample) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101581857B1 (ko) * | 2009-08-06 | 2015-12-31 | 삼성전자주식회사 | 불휘발성 메모리 시스템 및 그것의 인터리브 유닛 구성 방법 |
| US9021181B1 (en) * | 2010-09-27 | 2015-04-28 | Apple Inc. | Memory management for unifying memory cell conditions by using maximum time intervals |
| US9405355B2 (en) * | 2012-08-21 | 2016-08-02 | Micron Technology, Inc. | Memory operation power management by data transfer time adjustment |
| JP2014102610A (ja) * | 2012-11-19 | 2014-06-05 | Nippon Hoso Kyokai <Nhk> | 記録装置及び記録方法 |
| JP2015176309A (ja) | 2014-03-14 | 2015-10-05 | 株式会社東芝 | 半導体記憶装置 |
| KR20160058458A (ko) * | 2014-11-17 | 2016-05-25 | 에스케이하이닉스 주식회사 | 메모리 시스템 및 메모리 시스템의 동작 방법 |
| US9772777B2 (en) * | 2015-04-27 | 2017-09-26 | Southwest Research Institute | Systems and methods for improved access to flash memory devices |
| KR20170047468A (ko) * | 2015-10-22 | 2017-05-08 | 삼성전자주식회사 | 메모리 동작을 모니터링하는 메모리 모듈 및 그것의 전력 관리 방법 |
| US10650885B2 (en) * | 2017-03-07 | 2020-05-12 | Alibaba Group Holding Limited | Extending flash storage lifespan and data quality with data retention protection |
| JP7516215B2 (ja) * | 2020-11-10 | 2024-07-16 | キオクシア株式会社 | 半導体記憶装置 |
| JP2024025421A (ja) | 2022-08-12 | 2024-02-26 | キオクシア株式会社 | メモリシステムおよび制御方法 |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05135594A (ja) * | 1991-11-13 | 1993-06-01 | Mitsubishi Electric Corp | 情報カ−ドの制御方式 |
| JP3594626B2 (ja) * | 1993-03-04 | 2004-12-02 | 株式会社ルネサステクノロジ | 不揮発性メモリ装置 |
| JP3210259B2 (ja) * | 1996-04-19 | 2001-09-17 | 株式会社東芝 | 半導体記憶装置及び記憶システム |
| JP3983969B2 (ja) * | 2000-03-08 | 2007-09-26 | 株式会社東芝 | 不揮発性半導体記憶装置 |
| JP2002189631A (ja) * | 2000-12-22 | 2002-07-05 | Toshiba Corp | 情報書き込み装置、及びこれを有する携帯電子機器 |
| WO2003060722A1 (en) * | 2002-01-09 | 2003-07-24 | Renesas Technology Corp. | Memory system and memory card |
| JP4050548B2 (ja) * | 2002-04-18 | 2008-02-20 | 株式会社ルネサステクノロジ | 半導体記憶装置 |
| JP2006127623A (ja) * | 2004-10-28 | 2006-05-18 | Sony Corp | 半導体記憶装置とそのアクセス方法 |
| JP4693675B2 (ja) * | 2006-03-27 | 2011-06-01 | 株式会社東芝 | 半導体記憶装置の制御方法 |
| JP2007305210A (ja) * | 2006-05-10 | 2007-11-22 | Toshiba Corp | 半導体記憶装置 |
| JP4936914B2 (ja) * | 2007-01-23 | 2012-05-23 | 株式会社東芝 | 半導体記憶装置 |
| JP5127350B2 (ja) * | 2007-07-31 | 2013-01-23 | 株式会社東芝 | 半導体記憶装置 |
| JP2009104729A (ja) * | 2007-10-24 | 2009-05-14 | Toshiba Corp | 不揮発性半導体記憶装置 |
-
2010
- 2010-05-12 JP JP2010110382A patent/JP5480714B2/ja active Active
- 2010-05-14 US US12/780,169 patent/US8407405B2/en active Active
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